Matches 101 - 150 out of 322 < 1 2 3 4 5 6 7 >


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7649212 Active semiconductor component with a reduced surface area  
A semiconductor component in which the active junctions extend perpendicularly to the surface of a semiconductor chip substantially across the entire thickness thereof. The contacts with the...
7621998 Single crystalline gallium nitride thick film having reduced bending deformation  
The present invention relates to a freestanding, thick, single crystalline gallium nitride (GaN) film having significantly reduced bending deformation. The inventive GaN film having a crystal tilt...
7622753 Ignition circuit  
A component formed in a substrate of a first conductivity type, having two inputs and two outputs and: a first diode having its anode connected to a first input and having its cathode connected to...
7616859 Semiconductor device  
A semiconductor device includes a spaced-channel IGBT and an antiparallel diode that are formed in a same semiconductor substrate. The IGBT includes a base layer and insulated gate trenches by...
7612387 Thyristor optimized for a sinusoidal HF control  
A vertical thyristor adapted to an HF control, including a cathode region in a P-type base well, a lightly-doped P-type layer next to the base well, a lightly-doped N-type region in the...
7612388 Power semiconductor element with an emitter region and a stop zone in front of the emitter region  
The power semiconductor element has an emitter region and a stop zone in front of the emitter region. The conductivities of the emitter region and of the stop zone are opposed to one another. In...
7592642 Thyristor-based semiconductor device with indium-carbon implant and method of fabrication  
A thyristor-based memory device may comprise two base regions of opposite type conductivity formed between a cathode-emitter region and an anode-emitter region. A junction defined between the...
7589359 Silicon controlled rectifier  
A silicon controlled rectifier structure with the symmetrical layout is provided. The N-type doped regions and the P-type doped regions are disposed with the N-well and symmetrically arranged...
7582916 Silicon controlled rectifier  
A silicon controlled rectifier structure of polygonal layouts is provided. The polygonal first conductive type doped region is located in the middle of the polygonal second conductive type well....
7582937 ESD protection circuit  
An ESD protection circuit includes a substrate, diode device, first snapback device, ring structure, second snapback device and a control circuit. The diode device is formed in the substrate. The...
7579689 Integrated circuit package, and a method for producing an integrated circuit package having two dies with input and output terminals of integrated circuits of the dies directly addressable for testing of the package  
An integrated circuit package (1) comprising first and second dies on a laminate (5) in a resin encapsulating housing (6) comprises a digital signal processing integrated circuit (8) fabricated on...
7564072 Semiconductor device having junction termination extension  
A semiconductor device includes an anode electrode in Schottky contact with an n-type drift layer formed in an SiC substrate and a JTE region formed outside the anode electrode. The JTE region is...
7554130 Reducing effects of parasitic transistors in thyristor-based memory using an isolation or damage region  
An integrated circuit having memory, including thyristor-based memory cells, is described, where each of the thyristor-based memory cells includes a thyristor-based storage element and an access...
7538362 Lateral semiconductor diode and method for fabricating it  
The invention relates to a lateral semiconductor diode, in which contact metal fillings (6, 7), which run in trenches (3, 4) in particular in a silicon carbide body (1, 2), are interdigitated at a...
7531850 Semiconductor device including a memory cell with a negative differential resistance (NDR) device  
A semiconductor device may include at least one memory cell comprising a negative differential resistance (NDR) device and a control gate coupled thereto. The NDR device may include a superlattice...
7522405 High current electrical switch and method  
A method and system are disclosed for a high current electrical switch. The switch may be suitable for switching, rectifying or blocking direct current in the range of one to a thousand amperes...
7508012 Electronic component and method for its assembly  
An electronic component and method for its assembly is disclosed. In one embodiment, the electronic component comprises at least two semiconductor components and a circuit carrier comprising a die...
7508050 Negative differential resistance diode and SRAM utilizing such device  
A negative differential resistance (NDR) diode and a memory cell incorporating that NDR diode are provided. The NDR diode comprises a p-type germanium region in contact with an n-type germanium...
7488627 Thyristor-based memory and its method of operation  
A thyristor-based memory may comprise a thyristor accessible via an access transistor. A temperature dependent bias may be applied to at least one of a supporting substrate and an electrode...
7465965 Transistor controlled thyristor memory device  
A semiconductor device including: a bulk semiconductor substrate; an access transistor; a thruster formed on the bulk semiconductor substrate connecting to the access transistor; an element...
7443722 Semiconductor device and driving method therefor  
A semiconductor device includes a bulk semiconductor substrate, a plurality of storage elements, a bit line, a first voltage being applied to the first region side of the thyristor, and a voltage...
7436004 Semiconductor device  
An aspect of the present invention provides a semiconductor device that includes, a first semiconductor body of a first conductivity type, a first switching mechanism provided on the first...
7436003 Vertical thyristor for ESD protection and a method of fabricating a vertical thyristor for ESD protection  
A vertical thyristor for ESD protection comprises an anode (10), a cathode (16), a first gate electrode (12) and a second gate electrode (14). The first (12) and second (14) gate electrodes are...
7427787 Guardringed SCR ESD protection  
Methods and circuits are disclosed for protecting an electronic circuit from ESD damage using an SCR ESD cell. An SCR circuit is coupled to a terminal of an associated microelectronic circuit for...
7423299 Semiconductor devices with a field shaping region  
A semiconductor device, for example a diode (200), having a pn junction (101) has an insulating material field shaping region (201) adjacent, and possibly bridging, the pn junction. The field...
7405434 Quantum dot conjugates in a sub-micrometer fluidic channel  
A nanofluidic channel fabricated in fused silica with an approximately 500 nm square cross section was used to isolate, detect and identify individual quantum dot conjugates. The channel enables...
7385230 Modulation doped thyristor and complementary transistor combination for a monolithic optoelectronic integrated circuit  
A thyristor and family of high speed transistors and optoelectronic devices are obtained on a monolithic substrate (149) with an epitaxial layer structure comprised of two modulation doped...
7365372 Semiconductor device and method for manufacturing semiconductor device  
The present invention is to provide a semiconductor device including: a semiconductor layer that has a first-conductivity-type region, a second-conductivity-type region, a first-conductivity-type...
7352032 Output driver with split pins  
The drains of the PMOS transistor and the NMOS transistor of a driver are separated and connected to two spaced-apart pins. The spaced-apart pins provide ESD protection to the NMOS transistor,...
7345326 Electric signal transmission line  
An electric signal transmission line includes a signal electrode portion, a ground electrode portion and a dielectric portion formed on a semiconductor substrate. The signal electrode portion has...
7339203 Thyristor and method of manufacture  
A thyristor and a method for manufacturing the thyristor that includes a gate region extending from the first major surface into a semiconductor substrate and an anode region extending from the...
7332748 Electro-static discharge protection device  
An electro-static discharge protection device includes a first conductive type well and a second conductive type well which are formed in a surface of the first conductive type layer or a first...
7332749 Junction-gate type static induction thyristor and high-voltage pulse generator using such junction-gate type static induction thyristor  
A compact, inexpensive static induction thyristor (SIThy) which is less likely to be broken down at a high voltage rise-up rate during operation and which is used in a high-voltage pulse generator...
7326969 Semiconductor device incorporating thyristor-based memory and strained silicon  
A semiconductor memory device may comprise a thyristor-based memory having some portions formed in strained silicon, and other portions formed in relaxed silicon. In a further embodiment, a...
7309896 Electrostatic discharge protection device  
An electrostatic discharge (ESD) protection device is provided. The apparatus includes: a double diffused drain N-type metal oxide semiconductor field effect transistor (MOSFET); a P-type silicon...
7294408 Material composite and production and use of the material composite  
A material composite that is vacuum-tight and resistant to thermal shocks is disclosed along with a method for the production thereof and to its use. A permanent connection between an aluminum...
7291869 Electronic module with stacked semiconductors  
An electronic module has a heat sink with an upper surface and a lower surface, a plurality of leads arranged adjacent the heat sink and at least one circuit element with two vertical...
7279367 Method of manufacturing a thyristor semiconductor device  
In a method of processing a semiconductor device, a silicide-blocking layer may be formed over a semiconductor material. After defining the silicide-blocking layer, impurities may be implanted...
7279726 ESD protection device  
An ESD protection device for protecting a circuit against electrostatic discharges. The ESD protection device having a series circuit of N diodes, each diode comprising an anode and a cathode. The...
7268079 Method for fabricating a semiconductor having a field zone  
A method for fabricating a semiconductor and at least one second semiconductor zone of a semiconductor component having a semiconductor body having a first semiconductor zone. At least one field...
7266006 Multiple-layer serial diode cell and nonvolatile memory device using the same  
A multiple-layer serial diode cell and a nonvolatile memory device using the same enable reduction in the number of cell arrays by configuring cell arrays including a nonvolatile ferroelectric...
7262442 Triac operating in quadrants Q1 and Q4  
A triac including on its front surface side an autonomous starting well of the first conductivity type containing a region of the second conductivity type arranged to divide it, in top view, into...
7259407 Isolated HF-control SCR switch  
A vertical SCR switch to be controlled by a high-frequency signal having at least four main alternated layers. The switch includes a gate terminal and a gate reference terminal connected via...
7247921 Semiconductor apparatus and method of manufacturing same, and method of detecting defects in semiconductor apparatus  
A semiconductor apparatus includes a semiconductor substrate having a device region and a periphery region surrounding the device region; a semiconductor device provided in the device region of...
7242085 Semiconductor device including a semiconductor chip mounted on a metal base  
A chip size package semiconductor device can have reliable solder mounting and improved mounting reliability. A semiconductor device of one embodiment can include a semiconductor chip (1) mounted...
7242036 Semiconductor element  
A semiconductor element includes a first semiconductor layer of a first conductivity type including a non-deposition region and a deposition region. The first semiconductor layer has a first upper...
7230324 Strobe light control circuit and IGBT device  
As external connection terminals for an emitter electrode (12) of an IGBT chip, a first emitter terminal (151) for electrically connecting a light emitter in a strobe light control circuit to the...
7205581 Thyristor structure and overvoltage protection configuration having the thyristor structure  
A thyristor structure having a first terminal, formed as a first region with a first conductivity type, is provided. A second region of a second conductivity type adjoins the first region. A third...
7193251 ESD protection cluster and method of providing multi-port ESD protection  
In multiple port chip circuit, an ESD protection circuit and method of protecting the ports of the multiple port circuit, includes providing a plurality of bi-directional snapback devices such as...
7173291 Vertical protecting element formed in semiconductor substrate and semiconductor device using the same  
Between a terminal of an element to be protected and a GND terminal, a protecting element is connected, which includes a first n+ region, an insulating region and a second n+ region. The first n+...

Matches 101 - 150 out of 322 < 1 2 3 4 5 6 7 >