Patents in Class 257/105

Matches 1 - 50 out of 71

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Match	Document	Document Title
1	7226805	Sequential lithographic methods to reduce stacking fault nucleation sites An epitaxial silicon carbide layer is fabricated by forming first features in a surface of a silicon carbide substrate having an off-axis orientation toward a crystallographic direction. The first...
2	7109521	Silicon carbide semiconductor structures including multiple epitaxial layers having sidewalls An epitaxial silicon carbide layer is fabricated by forming first features in a surface of a silicon carbide substrate having an off-axis orientation toward a crystallographic direction. The first...
3	7042744	Diode stack Hermetically sealed high-voltage assemblies are made up of series-connected diodes. Exposed tabs bonding adjacent diodes allow for greater thermal dissipation than previous products. This allows...
4	6940104	Cascaded diode structure with deep N-well and method for making the same A cascaded diode structure with a deep N-well for effectively reducing the leakage current of the P-type substrate by floating the base of a parasitic transistor in the cascaded diode structure....
5	6797992	Apparatus and method for fabricating a high reverse voltage semiconductor device The present invention provides a high voltage semiconductor device capable of withstanding excessive breakdown and clamping voltages. The device includes a high resistivity substrate, and an...
6	6734470	Laterally varying multiple diodes A method for producing laterally varying multiple diodes and their device embodiment are presented herein. As demonstrated, multiple resonant tunneling diodes are fabricated together utilizing a...
7	6690030	Semiconductor device with negative differential resistance characteristics A gate oxide film formed on the surface of a silicon substrate is partly reduced in thickness or “thinned” at its specified part overlying a source region. In a gate region, a multilayer...
8	6661035	Laser device based on silicon nanostructures A silicon-based light-emitting device is described and comprises an active region, an excitation system which can bring about a condition of inversion of the population of carriers within the...
9	6555440	Process for fabricating a top side pitted diode device A method of fabricating a diode device, such as a PIN diode, includes forming top and bottom regions of opposite conductivity types and includes anisotropically etching into the top surface to form...
10	6515345	Transient voltage suppressor with diode overlaying another diode for conserving space A semiconductor component includes a semiconductor layer ( 210 ) and at least one diode ( 220 ) in the semiconductor layer. The semiconductor component also includes an electrically insulative...
11	6507043	Epitaxially-grown backward diode A method of epitaxially growing backward diodes as well as apparatus grown by the method are presented herein. More specifically, the invention utilizes epitaxial-growth techniques such as...
12	6410950	Geometrically coupled field-controlled-injection diode, voltage limiter and freewheeling diode having the geometrically coupled field-controlled-injection diode A pin diode includes an inner zone, a cathode zone and an anode zone. A boundary surface between the inner zone and the anode zone is at least partly curved and/or at least one floating region...
13	6342718	Compact SRAM cell using tunnel diodes The present invention provides a compact structure for the above-discussed SRAM cell as well as a method for fabricating the structure. The structure is preferably implemented in silicon. The...
14	6169298	Semiconductor light emitting device with conductive window layer A semiconductor light emitting device, such as the light emitting diode (LED) or the laser diode (LD), having a structure in which a light emitting area is a double heterostructure or a multi-layer...
15	6163039	Triangular-barrier optoelectronic switch A GaAs-InGaP triangular-barrier optoelectronic switch (TBOS) is disclosed, wherein two i-InGaP layers are formed on both sides of the p + -GaAs layer in the conventional triangular-barrier...
16	5952683	Functional semiconductor element with avalanche multiplication A functional semiconductor element, which is designed to perform an ultrafast amplifying, bistable, similar functional operation by initiating and stopping an avalanche multiplication in one of...
17	5936265	Semiconductor device including a tunnel effect element A semiconductor device includes a semiconductor substrate having an element region on the main surface thereof, an element isolation region formed to surround the element region on the main surface...
18	5864152	Semiconductor memory and method of writing, reading, and sustaining data A semiconductor memory has bit lines, word lines, ground lines, and memory cells. The bit lines intersect the word and ground lines, to form intersections where the memory cells are arranged,...
19	5825049	Resonant tunneling device with two-dimensional quantum well emitter and base layers A double electron layer tunneling device is presented. Electrons tunnel from a two dimensional emitter layer to a two dimensional tunneling layer and continue traveling to a collector at a lower...
20	5705827	Tunnel transistor and method of manufacturing same The tunnel transistor of the present invention has either a junction structure wherein a degenerated first semiconductor having one conduction type, a non-degenerated second semiconductor and a...
21	5686739	Three terminal tunnel device Disclosed is a three terminal tunnel device exhibiting a tunneling of carriers in a forward direction. The device comprises an intrinsic semiconductor region, an n-type degenerate semiconductor...
22	5589696	Tunnel transistor comprising a semiconductor film between gate and source/drain A tunnel transistor comprises a semiconductor film (27) between a gate isolating film (17) and parts of first (13) and second (15) semiconductor layers which are formed in a substrate (11) to serve...
23	5514882	Bistable four layer device memory cell and method for storing and retrieving binary information A new static memory cell based on the bistable operation of a three-terminal four layer semiconductor device working in the forward blocking state is disclosed. The power consumption of the memory...
24	5422496	Interband single-electron tunnel transistor and integrated circuit An interband single-electron tunnel/transistor utilizes an interband single-electron tunneling phenomenon between a valence band and a conduction band through a p-n junction. The transistor...
25	5373186	Bipolar transistor with monoatomic base layer between emitter and collector layers A semiconductor device consisting of epitaxial material is provided with at least one monoatomic layer of doping atoms, i.e. with a layer which is just one atom thick. A preferred device is a...
26	5365083	Semiconductor device of band-to-band tunneling type A semiconductor device of band-to-band tunneling type including a silicon substrate, a first gate electrode formed by a highly doped surface region of the silicon substrate, a first silicon oxide...
27	5144390	Silicon-on insulator transistor with internal body node to source node connection A transistor and a method of making a transistor are disclosed, where a tunnel diode is formed to make connection between the source of the transistor and the body node underlying the gate. For the...
28	5105233	Semiconductor luminescent device having organic/inorganic junction A semiconductor luminescent device having a structure in which an organic layer is sandwiched between first and second electrodes and having an organic/inorganic junction in which at least the...
29	5105247	Quantum field effect device with source extension region formed under a gate and between the source and drain regions Semiconductor devices having at least three terminals and a single PN junction using quantum-effect tunneling for the primary conduction modes, including gates 32 and 34, drains 28 and 30, and...
30	5060234	Injection laser with at least one pair of monoatomic layers of doping atoms A semiconductor device consisting of epitaxial material is provided with at least one monoatomic layer of doping atoms, i.e. with a layer which is just one atom thick. A particularly preferred...
31	5032891	Semiconductor memory device and manufacturing method thereof Disclosed is a semiconductor memory device comprising an SOI substrate in which a semiconductor film is formed on a semiconductor substrate with an insulating film interposed therebetween. A memory...
32	4969019	Three-terminal tunnel device A semiconductor device for generating tunnel electron carries without a depleted PN junction. A heavily doped P-type semiconductor region (12) is formed in a lightly doped P-type semiconductor...
33	4882609	Semiconductor devices with at least one monoatomic layer of doping atoms A semiconductor device consisting of epitaxial material is provided with at least one monoatomic layer of doping atoms, i.e. with a layer which is just one atom thick. A particularly preferred...
34	4835581	Electron gas hole gas tunneling transistor device Disclosed is a semiconductor device comprising a first semiconductor layer, a second semiconductor layer, and a third semiconductor layer which is formed between the first semiconductor layer and...
35	4799091	Quantum device output switch Quantum-coupled devices, wherein at least two closely adjacent potential wells, (e.g. islands of GaAs in an AlGaAs lattice) are made small enough that the energy levels of carriers within the wells...
36	4635089	MIS-integrated semiconductor device The present invention aims to form a MOST, for example a MOS-SIT, whose impurity density in a channel region is lower than an ordinary MOST on a substrate or is formed in an epitaxial growth layer...
37	4396931	Tunnel emitter upper valley transistor The invention is a three-terminal transistor structure having five layers of materials that in combination provide conduction by high mobility carrier transport across the base in an energy valley...
38	4242595	Tunnel diode load for ultra-fast low power switching circuits An active multi-terminal switching device such as a transistor in electric series connection with a tunnel diode load discharges, or charges, the output node between tunnel diode and transistor...
39	4173763	Heterojunction tunneling base transistor Device having three semiconductor regions, which can be characterized as the emitter, base and collector regions. The emitter and collector regions have a first conductivity type, and the base...
40	3943554	Threshold switching integrated circuit and method for forming the same A high speed threshold switching integrated circuit including a transistor and an integrally formed tunnel diode connected in parallel between the base and emitter of the transistor. The heavy...
41	3610967	INTEGRATED MEMORY CELL CIRCUIT Method and means for constructing memory cell circuits, comprising the addition of a single diffusion to an IGFET wafer to form diodes in the drain or source regions of at least one of the FETS in...
42	3513403	INTEGRATED SEMICONDUCTOR STRUCTURE WITH FREQUENCY SELECTIVE TRANSMISSION LINE SECTIONS
43	3482306	METHOD OF MAKING AN ESAKI MEANS FOR OBTAINING HIGH CURRENT GAIN FACTOR
44	3459967	TRANSISTOR SWITCHING USING A TUNNEL DIODE
45	3440453	THIN FILM TUNNELING DEVICE
46	3427472	THRESHOLD DETECTOR EMPLOYING TUNNEL DIODE-HOT CARRIER DIODE-TRANSISTOR IN COMBINATION WITH BACKWARD DIODE FOR ISOLATION
47	3390352	Tunnel-effect semiconductor, used as an oscillator or amplifier, forms part of surface of waveguide or chamber
48	3358158	Semiconductor devices
49	3333118	Semiconductor neuristor based upon the esaki effect
50	3327136	Variable gain tunneling

Matches 1 - 50 out of 71

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