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7619261 |
Method for manufacturing gallium nitride compound semiconductor
An Al 0.15 Ga 0.85 N layer 2 is formed on a silicon substrate 1 in a striped or grid pattern. A GaN layer 3 is formed in regions A where the substrate 1 is exposed and in regions B which...
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7618834 |
Method of manufacturing image sensor
Embodiments relate to a method of manufacturing an image sensor which includes forming a plurality of lower layers over a semiconductor substrate. A first passivation layer may be formed over the...
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7615804 |
Superlattice nitride semiconductor LD device
A nitride semiconductor device including a light emitting device comprises a n-type region of one or more nitride semiconductor layers having n-type conductivity, a p-type region of one or more...
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7615800 |
Quantum dot light emitting layer
An inorganic light emitting layer having a plurality of light emitting cores, each core having a semiconductor material that emits light in response to recombination of holes and electrons, each...
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7615798 |
Semiconductor light emitting device having an electrode made of a conductive oxide
A semiconductor light emitting device with improved efficiency in extracting light is provided. The semiconductor light emitting device comprises a first conductive type semiconductor layer, a...
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7615789 |
Vertical light emitting diode device structure
A vertical light-emitting diode (VLED) structure that may impart increased luminous efficiency over conventional LEDs and VLEDs is described. As additional benefits, some embodiments may have less...
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7615389 |
GaN lasers on ALN substrates and methods of fabrication
Ga(In)N-based laser structures and related methods of fabrication are proposed where Ga(In)N-based semiconductor laser structures are formed on AlN or GaN substrates in a manner that addresses the...
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7612432 |
P-type ZnS based semiconductor material having a low resistance due to its high copper content
It is an object to provide a p-type ZnS based semiconductor material having a low resistance which can easily form an ohmic contact to a metallic material. Moreover, the invention provides a...
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7612381 |
Method for fabricating a semiconductor device and semiconductor device
The present invention discloses a method for fabricating a semiconductor device, comprising: providing a translucent portion; forming a covering layer comprised of one or more metals on the...
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7612368 |
Organic bottom emission electronic device
An organic electronic device includes a pixel. In one embodiment, the organic electronic device is a bottom emission electronic device. The pixel has an aperture ratio of at least 40%. In another...
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7612363 |
N-type group III nitride semiconductor stacked layer structure
An n-type Group III nitride semiconductor stacked layer structure including a first n-type layer which includes a layer containing n-type impurity atoms at a high concentration and a layer...
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7612362 |
Nitride semiconductor light emitting device
A nitride semiconductor light emitting device includes a substrate, and a first n-type nitride semiconductor layer, a light emitting layer, a first p-type nitride semiconductor layer, a second...
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7608859 |
Semiconductor light-emitting device with transparent conductive film
A semiconductor light-emitting device with a transparent conductive film has: a light-emitting portion formed on a semiconductor substrate, the light-emitting portion having an n-type clad layer,...
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7601988 |
Light emitting device
Light-emitting elements have a problem that their light-extraction efficiency is low due to scattered light or reflected light inside the light-emitting elements. The light-extraction efficiency of...
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7601979 |
Gallium nitride-based compound semiconductor multilayer structure and production method thereof
An object of the present invention is to provide a gallium nitride compound semiconductor multilayer structure useful for producing a gallium nitride compound semiconductor light-emitting device...
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7598668 |
Organic semiconductor device and method for manufacturing same
An organic semiconductor device includes organic semiconductor layers ( 3, 4 ) and an electron injecting electrode ( 5 ) which is composed of MgAu alloy and injects electrons into the organic...
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7598533 |
High heat dissipating LED having a porous material layer
A high power LED has at least a porous material layer, a thermal conductive layer and a chip. The thermal conductive layer is disposed on the surface of the porous material layer and the chip is...
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7598108 |
Gallium nitride-on-silicon interface using multiple aluminum compound buffer layers
A thermal expansion interface between silicon (Si) and gallium nitride (GaN) films using multiple buffer layers of aluminum compounds has been provided, along with an associated fabrication method....
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7595515 |
Method of making light emitting device having a molded encapsulant
Disclosed herein is a method of making a light emitting device comprising an LED and a molded silicon-containing encapsulant. The method includes contacting the LED with a photopolymerizable...
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7595514 |
Nitride-based semiconductor light emitting device and method for fabricating same
An exemplary nitride-based semiconductor light emitting device includes a substrate, a nitride-based multi-layered structure epitaxially formed on the substrate, a first-type electrode and a...
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7592641 |
Semiconductor device, method for fabricating an electrode, and method for manufacturing a semiconductor device
A semiconductor device includes a p-type nitride semiconductor layer ( 14 ); and a p-side electrode ( 18 ) including a palladium oxide film ( 30 ) connected to a surface of the nitride...
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7592637 |
Light emitting diodes with reflective electrode and side electrode
A light emitting diode includes a first doped semiconductor layer, an active region and a second doped semiconductor layer. The first reflective electrode of the light emitting diode is connected...
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7592634 |
LED fabrication via ion implant isolation
A semiconductor light emitting diode includes a semiconductor substrate, an epitaxial layer of n-type Group III nitride on the substrate, a p-type epitaxial layer of Group III nitride on the n-type...
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7592618 |
Nanoparticle electroluminescence and method of manufacturing the same
The nanoparticle electroluminescence device includes: a front electrode formed of a transparent conductive material; a rear electrode formed of a conductive material; and an emitting layer...
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7589358 |
Phosphor single crystal substrate and method for preparing the same, and nitride semiconductor component using the same
A light emitting device having a phosphor substrate, which comprises nitride containing at least one element selected from Group XIII (IUPAC 1989) having a general formula XN, wherein X is at least...
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7589345 |
Nitride-based compound semiconductor substrate and method for fabricating the same
A nitride-based compound semiconductor substrate mainly used for an epitaxial growth of a nitride semiconductor and a method for fabricating the same are disclosed. The nitride-based compound...
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7586118 |
Micro device and manufacturing method thereof
A micro device and manufacturing method thereof. The micro device includes a substrate, an insulation layer, and a solution. The insulation layer is disposed on the substrate to define a channel...
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7585574 |
Pyrene derivative and organic electroluminescence device making use of the same
Provided are a pyrene derivative of a specified structure and an organic electroluminescence device including an organic thin film layer formed of one or multiple layers including at least a light...
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7582910 |
High efficiency light emitting diode (LED) with optimized photonic crystal extractor
A high efficiency, and possibly highly directional, light emitting diode (LED) with an optimized photonic crystal extractor. The LED is comprised of a substrate, a buffer layer grown on the...
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7579089 |
Luminescent device
Interfaces between layers in a light emitting element are eliminated by using a light emitting element with a mixed region comprising a hole transporting material and an electron transporting...
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7576368 |
Method of fabricating vertical structure LEDs
A method of fabricating semiconductor devices, such as GaN LEDs, on insulating substrates, such as sapphire. Semiconductor layers are produced on the insulating substrate using normal semiconductor...
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7576365 |
Group III nitride semiconductor light-emitting device, forming method thereof, lamp and light source using same
A Group III nitride semiconductor light-emitting device having a stacked structure includes a transparent crystal substrate having a front surface and a back surface, a first Group III nitride...
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7576363 |
Group III nitride compound semiconductor light emitting device
In a group III nitride compound semiconductor light emitting device comprising an n-type semiconductor layer, a p-type semiconductor layer having a superlattice structure in which a first layer...
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7575947 |
Method for enhancing growth of semi-polar (Al,In,Ga,B)N via metalorganic chemical vapor deposition
A method for growing a semi-polar nitride semiconductor thin film via metalorganic chemical vapor deposition (MOCVD) on a substrate, wherein a nitride nucleation or buffer layer is grown on the...
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7573076 |
Vertical gallium-nitride based light emitting diode
A vertical GaN-based LED and a method of manufacturing the same are provided. The vertical GaN-based LED can prevent the damage of an n-type GaN layer contacting an n-type electrode, thereby stably...
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7573075 |
Compound semiconductor device, production method of compound semiconductor device and diode
A compound semiconductor device includes hexagonal silicon carbide crystal substrate and a boron-phosphide-based semiconductor layer formed on the silicon carbide crystal substrate, wherein the...
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7573074 |
LED electrode
An electrode structure is disclosed for enhancing the brightness and/or efficiency of an LED. The electrode structure can have a metal electrode and an optically transmissive thick dielectric...
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7573072 |
Phosphor and blends thereof for use in LEDs
Phosphor compositions having the formula (Ba,Sr,Ca)SiO 4 :Eu and light emitting devices including a semiconductor light source and the above phosphor. Also disclosed are blends of (Ba,Sr,Ca)SiO 4...
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7573070 |
Organic light emitting display and method of fabricating the same
An organic light emitting display and method of fabricating the same are provided. The organic light emitting display and the method of fabricating the same in accordance with the present invention...
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7569866 |
Semiconductor light-emitting device
A semiconductor light-emitting device having: a light-emitting portion formed on a semiconductor substrate, the light-emitting portion having an n-type clad layer, an active layer and a p-type clad...
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7569865 |
Method of fabricating vertical structure LEDs
A method of fabricating semiconductor devices, such as GaN LEDs, on insulating substrates, such as sapphire. Semiconductor layers are produced on the insulating substrate using normal semiconductor...
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7566913 |
Gallium nitride material devices including conductive regions and methods associated with the same
Semiconductor structures comprising a III-nitride (e.g., gallium nitride) material region and methods associated with such structures are provided. In some embodiments, the structures include an...
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7564065 |
Light emitting device and a lighting apparatus
The present invention provides in one embodiment a light emitting device that has a high efficacy even in a range of low color temperatures, a long-term reliability, and an improved color rendering...
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7564064 |
Semiconductor light emitting device, an integrated semiconductor light emitting apparatus, an image display apparatus, and an illuminating apparatus having a semiconductor layer with conical crystal portion
An n-type GaN layer is grown onto a sapphire substrate and a hexagonal etching mask is formed onto the n-type GaN layer as provided. The n-type GaN layer is etched to a predetermined depth by using...
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7564052 |
Light-emitting element and light emitting device using the same
The present invention provides a light-emitting element having less increase in driving voltage with the accumulation of light-emission time, and provides a light-emitting element having less...
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7560749 |
Light emitting material, light emitting device, and electronic device
An object is to provide a novel light emitting material. Another object is to provide a light emitting device and an electronic device with reduced power consumption. Still another object is to...
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7560735 |
Semiconductor element, organic transistor, light-emitting device, and electronic device
It is an object of the present invention to provide an organic transistor having a low drive voltage. It is also another object of the present invention to provide an organic transistor, in which...
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7560175 |
Electroluminescent devices with low work function anode
Disclosed are organic electroluminescent devices employing materials of a low reduction potential in a layer functioning hole-injection. The organic electroluminescent devices may employ an anode...
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7557385 |
Electronic devices formed on substrates and their fabrication methods
The present invention relates to semiconductor electronic devices including molybdenum oxide formed on substrates which consist of materials which are used in known semiconductor electronic...
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7554132 |
Electronic device containing group-III element based nitride semiconductors
An electronic device includes a substrate; a single-crystalline first buffer layer, disposed on the substrate, containing a semiconductor represented by the formula Al x Ga 1−x N; a...
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