AcclaimIP-ad

Match Document Document Title
9041027 Methods of producing free-standing semiconductors using sacrificial buffer layers and recyclable substrates  
A method of producing semiconductor materials and devices that incorporate the semiconductor materials are provided. In particular, a method is provided of producing a semiconductor material, such...
9041045 Transparent LED wafer module and method for manufacturing same  
A transparent LED wafer module and a method for manufacturing the same are provided. In a conductor LED device epitaxial process, the conductor LED device is grown on a transparent material wafer,...
9041048 Semiconductor light emitting device  
The semiconductor light emitting device according to embodiments has a first conductive type semiconductor layer, an un-doped semiconductor layer under the first conductive type semiconductor...
9040326 High light extraction efficiency nitride based light emitting diode by surface roughening  
A III-nitride light emitting diode (LED) and method of fabricating the same, wherein at least one surface of a semipolar or nonpolar plane of a III-nitride layer of the LED is textured, thereby...
RE45517 Vertical geometry InGaN LED  
A vertical geometry light emitting diode is disclosed that is capable of emitting light in the red, green, blue, violet and ultraviolet portions of the electromagnetic spectrum. The light emitting...
9035336 Semiconductor device  
A semiconductor device has an active layer, a first semiconductor layer of first conductive type, an overflow prevention layer disposed between the active layer and the first semiconductor layer,...
9029867 Multi-color light emitting devices with compositionally graded cladding group III-nitride layers grown on substrates  
A light emitting device includes a substrate, multiple n-type layers, and multiple p-type layers. The n-type layers and the p-type layers each include a group III nitride alloy. At least one of...
9029908 Semiconductor diodes fabricated by aspect ratio trapping with coalesced films  
A photonic device comprises a substrate and a dielectric material including two or more openings that expose a portion of the substrate, the two or more openings each having an aspect ratio of at...
9029875 Light emitting device and method for manufacturing the same  
Disclosed are a light emitting device, a method for manufacturing the same, a light emitting device package, and a lighting system. The light emitting device includes a first conductive...
9029876 Display panel with shield layer partially over gate line  
There is provided a pixel structure of a liquid crystal panel including a transparent substrate, and a gate line, a data line, a switching transistor, a first electrode, a second electrode and a...
9024331 Substrate, template substrate, semiconductor light emitting element, semiconductor light emitting element producing method, illumination device using semiconductor light emitting element and electronic device  
Disclosed is a semiconductor light emitting element (LC) provided with a substrate (110) having one surface on which plural hexagonal-pyramid-shaped protrusions (110b) are provided, a base layer...
9024339 Light emitting diode  
The present invention provides a light emitting diode which comprises a substrate, a light emitting layer including an N-type semiconductor layer and a P-type semiconductor layer formed on the...
9018619 Quantum wells for light conversion  
A solid state light emitting device according to the present invention comprises an emitter structure having an active region of semiconductor material and a pair of oppositely doped layers of...
9018650 Semiconductor light emitting device  
A high luminance semiconductor light emitting device including a metallic reflecting layer formed using a non-transparent semiconductor substrate is provided. The device includes a GaAs substrate;...
9006749 Quantum dot laser diode and method of manufacturing the same  
Provided are a quantum dot laser diode and a method of manufacturing the same. The method of manufacturing a quantum dot laser diode includes the steps of: forming a grating structure layer...
9006778 Nitride semiconductor light emitting device and method of manufacturing the same  
A nitride semiconductor light emitting device includes: an uneven substrate having an uneven structure in which recesses are formed; a first nitride semiconductor layer of a first conductive type...
9006865 Epitaxial growth substrate, semiconductor device, and epitaxial growth method  
In heteroepitaxially growing a group-III nitride semiconductor on a Si single crystal substrate, the occurrence of cracks initiating in the wafer edge portion can be suppressed. Region A is an...
9006779 Nitride semiconductor light-emitting element having superior leakage current blocking effect and method for manufacturing same  
Disclosed are a nitride semiconductor light-emitting element and a method for manufacturing the same. The nitride semiconductor light-emitting element according to the present invention comprises:...
9000454 Electro-optic device and method for manufacturing the same  
An electro-optic device and a method for manufacturing the same. The method includes forming a bottom electrode on a substrate, forming a first insulation film crossing over the bottom electrode,...
9000468 Diode having vertical structure  
A light emitting diode includes a conductive layer, an n-GaN layer on the conductive layer, an active layer on the n-GaN layer, a p-GaN layer on the active layer, and a p-electrode on the p-GaN...
9000415 Light emitting device  
The disclosed light emitting device includes an intermediate layer interposed between the light emitting semiconductor structure and the substrate. The light emitting semiconductor structure...
9000477 Vertical topology light-emitting device  
A vertical topology light emitting device comprises a metal support structure; an adhesion structure on the metal support structure, wherein the adhesion structure comprises a first adhesion layer...
8993993 Semiconductor light emitting device and method for fabricating the same  
Provided are a semiconductor light emitting device and a method for fabricating the same. The semiconductor light emitting device includes a light emitting structure and a pattern. The light...
8994031 Gallium nitride compound semiconductor light emitting element and light source provided with said light emitting element  
In a gallium nitride based compound semiconductor light-emitting element including an active layer, the active layer includes a well layer 104 and a barrier layer 103, each of which is a...
8993992 GaN based semiconductor light-emitting device and method for producing same  
A GaN based semiconductor light-emitting device is provided. The light-emitting device includes a first GaN based compound semiconductor layer of an n-conductivity type; an active layer; a second...
8994001 Light emitting device for improving a light emission efficiency  
A light emitting device, a method of manufacturing the same, a light emitting device package, and a lighting system are disclosed. The light emitting device may include a first conductive...
8994013 Light-emitting element, light-emitting device, display device, electronic device, and lighting device  
An object is to provide a light-emitting element which includes an exciplex being used as an energy donor capable of efficiently transferring energy to a substance exhibiting thermally activated...
8994055 Light source and projection-type display device  
A light source capable of solving a problem in which the etendue is increased when random polarization is converted into a specific polarization is provided. A relief structure that functions as...
8987726 Organic electroluminescent element  
Provided is a high-luminance, long-life laminated organic electroluminescent element. The organic electroluminescent element has a composition in which a plurality of light-emitting units,...
8987037 Methods of manufacturing a solar cell  
A method of manufacturing a solar cell includes forming a buffer layer between an optical absorption layer and a window electrode layer. Forming the buffer layer includes depositing a metal...
8981393 Light-emitting element, light-emitting device, display device, electronic device, and lighting device  
An object is to provide a light-emitting element which uses a plurality of kinds of light-emitting dopants and has high emission efficiency. In one embodiment of the present invention, a...
8981389 Illumination device  
An illumination device includes a base, a light-emitting module, a first layer, and a second layer. The light-emitting module is disposed on the base for generating a progressive-type...
8981420 Nitride semiconductor device  
A nitride semiconductor device includes a conductive oxide film with high reliability is provided. The nitride semiconductor device having a nitride semiconductor layer includes a conductive oxide...
8969854 Light-emitting layer and light-emitting element  
To provide a highly efficient organic light-emitting element. An extremely thin layer (a monomolecular film or the like) containing an organic light-emitting material such as an iridium complex is...
8969883 Semiconductor light device and fabrication method thereof  
The present invention discloses a light device and a fabrication method thereof. An object of the present invention is to provide the light device and the fabrication method thereof an...
8969865 Semiconductor film composition  
A semiconductor film composition includes an oxide semiconductor material. At least one polyatomic ion is incorporated into the oxide semiconductor material.
8963166 III nitride crystal substrate and light-emitting device  
Toward making available III nitride crystal substrates advantageously employed in light-emitting devices, and light-emitting devices incorporating the substrates, a III nitride crystal substrate...
8963122 Semiconductor light emitting element and light emitting device  
In a semiconductor light emitting element outputting light indicating green color by using a group III nitride semiconductor, light emission output is improved. A semiconductor light emitting...
8963143 Organic electroluminescent device  
The invention provides an OLED device with improved light out-coupling comprising an electroluminescent layer stack (2) on top of a substrate (1), where the electroluminescent layer stack (2)...
8963125 LED device, LED device array, and method of driving the LED device array  
Provided is an LED device which is capable of reducing the emission size without changing the size of an LED and is capable of switching the emission size arbitrarily. The LED device includes, on...
8956896 Metalorganic chemical vapor deposition (MOCVD) growth of high performance non-polar III-nitride optical devices  
A method of device growth and p-contact processing that produces improved performance for non-polar III-nitride light emitting diodes and laser diodes. Key components using a low defect density...
8956737 Red phosphorescent compound and organic electroluminescent device using the same  
The invention relates to a red phosphorescent compound represented by the following Formula (1) and an organic electroluminescent (EL) device using the same: wherein
8957437 Organic light emitting diode display  
An OLED display including: a substrate main body; a first transflective electrode formed on the substrate main body; an organic emission layer formed on the first transflective electrode; a second...
8957426 Laminate substrate and method of fabricating the same  
Embodiments of the invention provide a crystalline aluminum carbide layer, a laminate substrate having the crystalline aluminum carbide layer formed thereon, and a method of fabricating the same....
8952399 Light emitting device comprising a wavelength conversion layer having indirect bandgap energy and made of an N-type doped AlInGaP material  
Various embodiments of light emitting devices with efficient wavelength conversion and associated methods of manufacturing are described herein. In one embodiment, a light emitting device includes...
8952401 Semiconductor light emitting device, wafer, and method for manufacturing nitride semiconductor crystal layer  
According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer, a light emitting layer, a second semiconductor layer, and a low refractive index layer. The...
8952411 Light emitting diode  
A light emitting diode device may include a carrier, a p-type and n-type semiconductor layers, an active layer, a first electrode and a second electrode is provided. The carrier has a growth...
8946765 Gallium nitride devices  
Semiconductor structures comprising a III-nitride (e.g., gallium nitride) material region and methods associated with such structures are provided. In some embodiments, the structures include an...
8946698 Light emitting element with layers having complementary colors for absorbing light  
It is an object of the present invention to provide a light emitting element that realizes a high contrast. It is another object of the present invention to provide a light emitting device that...
8946751 Semiconductor light emitting device  
A semiconductor light emitting device includes a first conductivity-type semiconductor layer, an active layer and a second conductivity-type semiconductor layer sequentially stacked on a...