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7112829 |
Light emitting device and method for making same
A light emission device and method for producing the device. The device includes, on a substrate, a stack including an etching stop layer, a first barrier layer, an emitting layer, and a second...
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7109530 |
Nitride-based semiconductor element
A nitride-based semiconductor element having excellent element characteristics is obtained by fabricating a nitride-based semiconductor layer having excellent crystallinity without performing...
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7105857 |
Nitride semiconductor device comprising bonded substrate and fabrication method of the same
A substrate 1 for growing nitride semiconductor has a first and second face and has a thermal expansion coefficient that is larger than that of the nitride semiconductor. At least n-type nitride...
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7105864 |
Non-volatile zero field splitting resonance memory
A low-volatility or non-volatility memory device utilizing zero field splitting properties to store data. In response to an electrical pulse or a light pulse, in the absence of any externally...
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7105865 |
AlxInyGa1−x−yN mixture crystal substrate
Seeds are implanted in a regular pattern upon an undersubstrate. An Al x In y Ga 1-x-y N (0≦x≦1, 0≦y≦1, 0<x+y≦1) mixture crystal is grown on the seed implanted undersubstrate by a...
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7105850 |
GaN LED structure with p-type contacting layer grown at low-temperature and having low resistivity
Disclosed is a GaN LED structure with a p-type contacting layer using Al—Mg-codoped In 1−y Ga y N grown at low temperature, and having low resistivity. The LED structure comprises, from the...
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7105859 |
Nitride semiconductor light-emitting diode chip and method of manufacturing the same
A nitride semiconductor light emitting diode chip includes a transparent substrate and a nitride semiconductor stacked-layer structure formed on the upper surface of the substrate, the nitride...
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7102158 |
Light-based system for detecting analytes
Device, kit and method of using same to detect analytes such as nucleic acids are described. An excitation source, preferably a nitride-based LED, emits light capable of being absorbed by...
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7102202 |
Display unit, drive circuit, amorphous silicon thin-film transistor, and method of driving OLED
A display unit has an organic light emitting diode (OLED) 21 provided in correspondence with each of pixels and capable of emitting light by itself, a drive transistor 22 for driving the OLED ...
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7102174 |
Light emitting device and light emitting device module
The present invention discloses a light emitting device comprising a substrate transparent at the emission wavelength and an active layer structure formed on such substrate, in which the thickness...
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7098487 |
Gallium nitride crystal and method of making same
There is provided a GaN single crystal at least about 2 millimeters in diameter, with a dislocation density less than about 10 4 cm −1 , and having no tilt boundaries. A method of forming a GaN...
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7097917 |
Compounds for use in organic EL devices and organic EL devices
A compound for use in organic EL devices comprising
X n —Y
wherein X is a...
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7097916 |
Organic light emitting element and light emitting device using the element
A chelate complex having as its central metal tungsten which is an inexpensive metal and which is a heavy atom is applied to an organic light emitting element, thereby obtaining an organic light...
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7095062 |
Methods of fabricating gallium nitride semiconductor layers on substrates including non-gallium nitride posts, and gallium nitride semiconductor structures fabricated thereby
A substrate includes non-gallium nitride posts that define trenches therebetween, wherein the non-gallium nitride posts include non-gallium nitride sidewalls and non-gallium nitride tops and the...
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7095059 |
Group III nitride compound semiconductor device
The present invention provides a Group III nitride compound semiconductor device in which the amount of a current allowed to be applied on a p-type pad electrode can be increased. That is, in the...
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7094477 |
Luminescence device and display apparatus
In a luminescence device formed of one or plural layers of organic film between a cathode and an anode, at least one layer is a luminescence layer, and a luminescence molecule of a metal...
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7095058 |
System and method for an improved light-emitting device
The improved light-emitting device may include a waveguide made with Si nanocrystals doped with optically active elements. The improved light-emitting device may be suitable for use in chip-to-chip...
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7095041 |
High-efficiency light emitting diode
A high-efficiency light emitting diode is provided. The light emitting diode includes a substrate; a first compound semiconductor layer formed on the top surface of the substrate; a first electrode...
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7095051 |
Nitride semiconductor element
In a nitride semiconductor device having an active layer 12 between a first electrically conductive type of layer and a second electrically conductive type of layer, a quantum well structure is...
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7095042 |
Electrode structure, semiconductor light-emitting device having the same and method of manufacturing the same
A semiconductor light emitting device including a p-type electrode structure and having a low contact resistance and high reflectance is provided. The semiconductor light emitting device includes a...
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7090928 |
Binuclear compounds
Devices are provided having an anode, a cathode, and an emissive layer disposed between and electrically connected to the anode and the cathode. The emissive layer includes an emissive material...
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7091526 |
Light emitting device and method of fabricating the same
A light emitting device 100 has a light emitting layer portion 9 which comprises an active layer 5 composed of an Mg x Zn 1-x O-type oxide semiconductor, a p-type cladding layer 6 again...
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7091524 |
Semiconductor device and method for fabricating the same
A semiconductor device has a substrate, a first Group III nitride semiconductor layer formed on the substrate, a first oxide layer formed in proximity to the upper portions of defects present in...
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7087933 |
Light-emitting semiconductor device and method of fabrication
A light emitting diode has a semiconductor region for production of light. The semiconductor region is a lamination of two complementary layers, an n-type semiconductor layer, an active layer, a...
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7087319 |
Organic electro luminescence display using metallocene compound
The present invention relates to an organic electroluminescence display using a metallocene compound, and more particularly to an organic electroluminescence display with a simple structure using a...
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7087932 |
Semiconductor light-emitting device and semiconductor light-emitting device
A semiconductor light-emitting element is provided which has a structure that does not complicate a fabrication process, can be formed in high precision and does not invite any degradation of...
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7084434 |
Uniform color phosphor-coated light-emitting diode
Light-emitting devices, and related components, systems and methods are disclosed.
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7084421 |
Light-emitting device using group III nitride group compound semiconductor
A light-emitting semiconductor device provides an active layer which comprises thirteen (13) layers that includes six (6) pairs of quantum barrier layers made of Al 0.95 In 0.05 N and quantum well...
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7078731 |
Gallium nitride crystals and wafers and method of making
A GaN crystal having up to about 5 mole percent of at least one of aluminum, indium, and combinations thereof. The GaN crystal has at least one grain having a diameter greater than 2 mm, a...
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7078115 |
Metal coordination compound and electroluminescence device
A metal coordination compound having a basic structure represented by formula: ML m L′ n (1), wherein M is a metal atom of Ir, Pt, Rh or Pd; L and L′ are mutually different bidentate ligands;...
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7075120 |
Light-emitting diode and its manufacturing method
It is an object of the present invention to provides the light emitting diode having a light emitting part of an AlGaInP type, and having a current diffusion layer which includes In on a light...
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7071492 |
Thermo-optical device
A polymer well may be formed over a thermal oxide formed over a semiconductor substrate in one embodiment. The well may include a waveguide and a pair of heaters adjacent the waveguide. Each heater...
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7071494 |
Light emitting device with enhanced optical scattering
A light emitting device includes a substrate, a textured layer overlying the substrate, at least one III-nitride layer overlying the textured layer, and a substantially planar light emitting...
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7071496 |
Electronic device and method for manufacturing the same
An electronic device including a new oxide layer and a method for manufacturing the same are provided. The electronic device of the present invention includes an oxide layer, which is formed of an...
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7071495 |
III group nitride system compound semiconductor light emitting element and method of making same
A III group nitride system compound semiconductor light emitting element has: a transparent substrate that is of a material except for III group nitride system compound semiconductor; a convex...
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7071490 |
Group III nitride LED with silicon carbide substrate
The present invention is a semiconductor structure for light emitting devices that can emit in the red to ultraviolet portion of the electromagnetic spectrum. The semiconductor structure includes a...
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7067850 |
Stacked switchable element and diode combination
A device ( 10 ) comprises a semiconductor diode ( 12 ) and a switchable element ( 14 ) positioned in stacked adjacent relationship so that the semiconductor diode ( 12 ) and the switchable element...
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7067838 |
Gallium-nitride-based light-emitting apparatus
A light-emitting apparatus employing a GaN-based semiconductor. The light-emitting apparatus comprises an n-type clad layer ( 124 ); an active layer ( 129 ) including an n-type first barrier layer...
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7066623 |
Method and apparatus for producing untainted white light using off-white light emitting diodes
A white light emitting device by using off-white light emitting diodes (LED's). Rather than using just pure white LEDs, the white light emitting device arranges those LEDs which exhibit off-white...
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7064476 |
Emitter
Electron emitters and a method of fabricating emitters are disclosed, having a concentration gradient of impurities, such that the highest concentration of impurities is at the apex of the emitters...
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7061011 |
Bipolar organic devices
An organic device is provided, having a first electrode and a second electrode. A first organic layer is disposed between the first electrode and the second electrode. The first organic layer...
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7061026 |
High brightness gallium nitride-based light emitting diode with transparent conducting oxide spreading layer
A new transparent conducting oxide (TCO), which can be expressed as Al x Ga 3-x-y In 5+y Sn 2-z O 16-2z ; 0≦x<1, 0<y<3, 0≦z<2, has been used to improve the brightness and current...
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7057210 |
Electrode for light-emitting semiconductor devices and method of producing the electrode
An electrode for a light-emitting semiconductor device includes a light-permeable electrode formed to come into contact with the surface of the semiconductor, and a wire-bonding electrode that is...
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7057211 |
Nitride semiconductor laser device and manufacturing method thereof
The object of this invention is to provide a high-output type nitride semiconductor laser device comprising a pair of end faces of a resonator. The nitride semiconductor laser device comprises an...
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7053420 |
GaN group semiconductor light-emitting element with concave and convex structures on the substrate and a production method thereof
Concaves and convexes 1 a are formed by processing the surface layer of a first layer 1 , and second layer 2 having a different refractive index from the first layer is grown while burying the...
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7053422 |
Solid-state self-emission display and its production method
The present invention provides a solid state light-emissive display apparatus of high brightness and efficiency, high reliability, and of thin type, and method of manufacturing the same at low...
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7053413 |
Homoepitaxial gallium-nitride-based light emitting device and method for producing
A light emitting device, such as a light emitting diode or a laser diode. The light emitting device comprises a light emitting semiconductor active region disposed on a substrate. The substrate...
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7053417 |
Semiconductor led device and producing method
The present invention provides a semiconductor device with InxGa1-xN crystal passivation layer and manufacturing method thereof which effectively blocks the leakage current between the surface &...
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7049672 |
Method and apparatus for preparing a plurality of dice in wafers
An apparatus and method for preparing a plurality of dice on a semiconductor wafer. In one embodiment, a method according to embodiments of the present invention includes arranging a plurality of...
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7049630 |
Electrode patterning in OLED devices
An OLED device having pillars with a cross section that is wider on the top. The pillars structure a conductive layer during deposition into distinct portions located between the pillars and on the...
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