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7141829 |
Semiconductor laser device with antimony and crystal growth method
A semiconductor device ( 100 ) has, as its well layer, a III–V compound semiconductor layer ( 106 ) containing, as V-group components, nitrogen, antimony, and one or more V-group elements other...
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7138648 |
Ultraviolet group III-nitride-based quantum well laser diodes
A pair of undoped spacer layers are provided adjacent to, or near to, a single quantum well aluminum gallium nitride active region. In various exemplary embodiments, the undoped spacer layers are...
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7135713 |
Light emitting diode and method for manufacturing the same
A light emitting diode and a method for manufacturing the same are disclosed. The light emitting diode comprises: a transparent substrate; a reflective layer located on a surface of the transparent...
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7135711 |
Electroluminescent body
An electroluminescent component ( 1 ), in particular an LED chip, which has a high external efficiency in conjunction with a simple construction. The electroluminescent component ( 1 ) has a...
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7135715 |
Co-doping for fermi level control in semi-insulating Group III nitrides
Semi-insulating Group III nitride layers and methods of fabricating semi-insulating Group III nitride layers include doping a Group III nitride layer with a shallow level p-type dopant and doping...
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7135716 |
Gallium nitride-based semiconductor light-emitting device
A gallium nitride-based semiconductor light-emitting device includes a sapphire substrate having a nitridated upper surface; a polarity conversion layer formed on the sapphire substrate and made of...
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7132692 |
Nanosilicon light-emitting element and manufacturing method thereof
An object of the present invention is to allow the three primary colors of light (red, green, blue) to be emitted, and particularly to allow blue light to be emitted clearly and in a stable manner...
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7132695 |
Light emitting diode having a dual dopant contact layer
A light emitting diode with a dual dopant contact layer. The light emitting diode includes a substrate, a light emitting stacked structure formed on the substrate, a dual dopant contact layer...
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7132691 |
Semiconductor light-emitting device and method for manufacturing the same
It has a structure in which an active layer ( 5 ) that emits light by electric current injection is sandwiched between an n-type cladding layer ( 4 ) and a p-type cladding layer ( 6 ) made of...
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7129386 |
Substituted anthryl derivative and electroluminescence device using the same
There is disclosed a substituted anthryl derivative is represented by the following general formula (1). The use of the substituted anthryl derivative allows the production of an organic...
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7129525 |
Semiconductor light-emitting device
Affords semiconductor light-emitting devices in which generation of spontaneous electric fields in the active layer is reduced to enable enhanced brightness. Semiconductor light-emitting device ( 1...
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7129527 |
Light emitting diode and method of making the same
A light emitting diode (LED) and a method of making the same are disclosed. The present invention uses a metal layer of high conductivity and high reflectivity to prevent the substrate from...
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7129528 |
Electromagnetic radiation emitting semiconductor chip and procedure for its production
Semiconductor chip which emits electromagnetic radiation, and method for fabricating it. To improve the light yield of semiconductor chips which emit electromagnetic radiation, a textured...
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7129526 |
White color light emitting device
An ultraviolet type white color light emitting device (Q) including a 340 nm–400 nm ultraviolet InGaN-LED, a first fluorescence plate of ZnS doped with more than 1×10 17 cm −3 Al, In, Ga, Cl,...
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7129514 |
Image display unit
Semiconductor light-emitting devices are provided. The semiconductor light-emitting devices include a substrate and a crystal layer selectively grown thereon at least a portion of the crystal layer...
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7129515 |
Lighting system
Semiconductor light-emitting devices are provided. The semiconductor light-emitting devices include a substrate and a crystal layer selectively grown thereon at least a portion of the crystal layer...
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7126052 |
Isoelectronic surfactant induced sublattice disordering in optoelectronic devices
A method of disordering a layer of an optoelectronic device including; growing a plurality of lower layers; introducing an isoelectronic surfactant; growing a layer; allowing the surfactant to...
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7122826 |
Image display unit
Semiconductor light-emitting devices are provided. The semiconductor light-emitting devices include a substrate and a crystal layer selectively grown thereon at least a portion of the crystal layer...
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7122842 |
Solid state white light emitter and display using same
A light emitting assembly comprising a solid state device coupleable with a power supply constructed and arranged to power the solid state device to emit from the solid state device. A series of...
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7122734 |
Isoelectronic surfactant suppression of threading dislocations in metamorphic epitaxial layers
A method of reducing propagation of threading dislocations into active areas of an optoelectronic device having a III–V material system includes growing a metamorphic buffer region in the...
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7122847 |
Nitride semiconductor thin film and method for growing the same
The present invention relates to a nitride semiconductor thin film and a method for growing the same. The present invention has an advantage in that a plurality of grooves are formed on a substrate...
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7122839 |
Semiconductor light emitting devices with graded composition light emitting layers
A III-nitride light emitting layer in a semiconductor light emitting device has a graded composition. The composition of the light emitting layer may be graded such that the change in the...
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7122846 |
Oxygen-doped Al-containing current blocking layers in active semiconductor devices in photonic integrated circuits (PICs)
In photonic integrated circuits (PICs) having at least one active semiconductor device, such as, a buried heterostructure semiconductor laser, LED, modulator, photodiode, heterojunction bipolar...
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7122825 |
Lighting system
Semiconductor light-emitting devices are provided. The semiconductor light-emitting devices include a substrate and a crystal layer selectively grown thereon at least a portion of the crystal layer...
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7119378 |
Nitride semiconductor device
A nitride semiconductor device includes an n-type semiconductor layer, p-type semiconductor layer and an active layer of a quantum well structure that is sandwiched between said p-type and n-type...
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7119372 |
Flip-chip light emitting diode
A flip chip light emitting diode die ( 10, 10′, 10 ″) includes a light-transmissive substrate ( 12, 12′, 12 ″) and semiconductor layers ( 14, 14′, 14 ″) that are selectively patterned...
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7119360 |
Light-emitting polymers and electronic devices using such polymers
Novel pentaphenylenes having the following general formula are described;
These polymers generally exhibit blue electroluminescence and are useful in electronic devices. A novel diketone...
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7119373 |
Sled
A non-lasing superluminescent light emitting diode (SLED) comprises a semiconductor heterostructure forming a PN junction and a waveguide defining an optical beam path. The heterostructure includes...
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7118813 |
Vicinal gallium nitride substrate for high quality homoepitaxy
A III–V nitride, e.g., GaN, substrate including a (0001) surface offcut from the <0001> direction predominantly toward a direction selected from the group consisting of <10-10> and...
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7120181 |
Semiconductor laser device and method of fabricating the same
In a semiconductor laser device, an AlGaN buffer layer, a GaN layer, an n-GaN layer, an n-AlGaN cladding layer, an MQW light emitting layer, a p-AlGaN cladding layer, a p-first GaN cap layer, a...
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7118932 |
Method of manufacturing waveguide type optical element and integrated optical waveguide type element using waveguide type optical element
A method of manufacturing a waveguide type optical element wherein Zn is selectively diffused on a light absorption layer using an undoped InP layer. Since an impurity diffusion area is made on the...
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7119361 |
Luminescence stabilization of anodically oxidized porous silicon layers
A porous silicon structure is stabilized by anodically oxidizing the structure and then subjecting it to chemical functionalization to protect non-oxidized surface regions, preferably in the...
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7115907 |
Radiation-emitting semiconductor component
A radiation-emitting semiconductor component with a layer structure ( 12 ) which includes a photon-emitting active layer ( 16 ), an n-doped cladding layer ( 14 ) and a p-doped cladding layer ( 18...
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7115908 |
III-nitride light emitting device with reduced polarization fields
A semiconductor light emitting device includes a light emitting layer sandwiched between two spacer layers. The difference between the net polarization in at least one of the spacer layers and the...
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7115910 |
Multicolor photodiode array and method of manufacturing thereof
Novel structures of the photodetector having broad spectral ranges detection capability (from UV to 1700 nm (and also 2500 nm)) are provided. The photodetector can offer high quantum efficiency...
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7115914 |
Nitride semiconductor light-emitting device
A nitride semiconductor light-emitting device includes a first conductive nitride semiconductor layer; an active layer formed on the first conductive nitride semiconductor layer, and having at...
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7115916 |
System and method for molecular optical emission
A light emitting device comprises a gate electrode, a channel comprising a molecule for electrically stimulated optical emission, wherein the molecule is disposed within an effective range of the...
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7115899 |
Light-emitting copolymers and electronic devices using such copolymers
Novel pentaphenylene copolymers which are useful in electronic devices are described. The copolymers have at least one monomeric unit having Formula I:
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7115915 |
Light-emitting diode
A light-emitting diode (LED) is described. The light-emitting diode comprises a metal substrate, a reflective layer, a first transparent conductive layer, an illuminant epitaxial structure and a...
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7112826 |
Single crystal GaN substrate semiconductor device
Seeds are implanted in a regular pattern upon an undersubstrate. A GaN crystal is grown on the seed implanted undersubstrate by a facet growth method. The facet growth makes facet pits above the...
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7112821 |
Surface-emitting type light-emitting diode and fabrication method thereof
Disclosed is a surface-emitting type light-emitting diode including a substrate, a p-n junction layer elevated on a portion of the substrate to emit light, and a first isolator layer formed on a...
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7112829 |
Light emitting device and method for making same
A light emission device and method for producing the device. The device includes, on a substrate, a stack including an etching stop layer, a first barrier layer, an emitting layer, and a second...
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7109530 |
Nitride-based semiconductor element
A nitride-based semiconductor element having excellent element characteristics is obtained by fabricating a nitride-based semiconductor layer having excellent crystallinity without performing...
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7105857 |
Nitride semiconductor device comprising bonded substrate and fabrication method of the same
A substrate 1 for growing nitride semiconductor has a first and second face and has a thermal expansion coefficient that is larger than that of the nitride semiconductor. At least n-type nitride...
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7105864 |
Non-volatile zero field splitting resonance memory
A low-volatility or non-volatility memory device utilizing zero field splitting properties to store data. In response to an electrical pulse or a light pulse, in the absence of any externally...
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7105865 |
AlxInyGa1−x−yN mixture crystal substrate
Seeds are implanted in a regular pattern upon an undersubstrate. An Al x In y Ga 1-x-y N (0≦x≦1, 0≦y≦1, 0<x+y≦1) mixture crystal is grown on the seed implanted undersubstrate by a...
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7105850 |
GaN LED structure with p-type contacting layer grown at low-temperature and having low resistivity
Disclosed is a GaN LED structure with a p-type contacting layer using Al—Mg-codoped In 1−y Ga y N grown at low temperature, and having low resistivity. The LED structure comprises, from the...
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7105859 |
Nitride semiconductor light-emitting diode chip and method of manufacturing the same
A nitride semiconductor light emitting diode chip includes a transparent substrate and a nitride semiconductor stacked-layer structure formed on the upper surface of the substrate, the nitride...
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7102158 |
Light-based system for detecting analytes
Device, kit and method of using same to detect analytes such as nucleic acids are described. An excitation source, preferably a nitride-based LED, emits light capable of being absorbed by...
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7102202 |
Display unit, drive circuit, amorphous silicon thin-film transistor, and method of driving OLED
A display unit has an organic light emitting diode (OLED) 21 provided in correspondence with each of pixels and capable of emitting light by itself, a drive transistor 22 for driving the OLED ...
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