Matches 251 - 300 out of 1434 < 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 >
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7227189 Vapor-phase growth method for a nitride semiconductor and a nitride semiconductor device  
Nitride semiconductor devices and methods of producing same are provided. The present invention includes forming a nitride semiconductor layer on a base body of the nitride semiconductor under...
7227192 Light-emitting device and manufacturing process of the light-emitting device  
A light-emitting device comprises a light-emitting unit including a plurality of first connecting pads, a base substrate including a plurality of second connecting pads, and a plurality of...
7227177 Doped semiconductor nanocrystals  
A particle, includes a semiconductor nanocrystal. The nanocrystal is doped.
7227196 Group II-VI semiconductor devices  
Semiconductor devices containing group II-VI semiconductor materials are disclosed. The devices may include a p-n junction containing a p-type group II-VI semiconductor material and an n-type...
7223998 White, single or multi-color light emitting diodes by recycling guided modes  
A white, single or multi-color light emitting diode (LED) includes a mirror for reflecting photons within the LED; a first active region, adjacent the mirror, including one or more current-injected...
7221001 Semiconductor light-emitting device and process for producing the same  
Semiconductor light-emitting devices are provided. The semiconductor light-emitting devices include a substrate and a crystal layer selectively grown thereon at least a portion of the crystal layer...
7221000 Reverse polarization light emitting region for a semiconductor light emitting device  
A semiconductor light emitting device includes a light emitting layer disposed between an n-type region and a p-type region. The light emitting layer may be a wurtzite III-nitride layer with a...
7220996 Semiconductor light-emitting device  
A semiconductor light-emitting device including a light-emitting portion permitting light at a specific wavelength and having two surfaces opposite each other. The device also includes a first type...
7217947 Semiconductor light source and method of making  
A solid state light emitting device having a plurality of semiconductor finger members with side walls perpendicular to a substrate. Multiple quantum wells are formed on the side walls, and are...
7217959 Single-chip white light emitting device  
A single-chip white light emitting device, including: a substrate, a buffer layer, a first conductive cladding layer, a second conductive cladding layer, at least one broad-spectrum...
7211836 Group-III nitride semiconductor light-emitting device and production method thereof  
A high emission intensity group-III nitride semiconductor light-emitting device obtained by eliminating crystal lattice mismatch with substrate crystal and using a gallium nitride phosphide-based...
7208775 Polarized radiation source using spin extraction/injection  
Spin-polarized electrons can be efficiently extracted from an n-doped semiconductor layer (n-S) by forming a modified Schottky contact with a ferromagnetic material (FM) and a δ-doped layer at an...
7208752 Structure and manufacturing of gallium nitride light emitting diode  
A structure of a gallium nitride light emitting diode has a transparent conductive window layer including a diffusion barrier layer, an ohmic contact layer, and a window layer. By using the added...
7205578 Semiconductor component which emits radiation, and method for producing the same  
This invention describes a radiation-emitting semiconductor component with the a multilayered structure ( 4 ) that contains a radiation-emitting active layer ( 5 ), and a window ( 1 ) transparent...
7201975 Organic light emitting device  
A hole injection layer, a hole transport layer, a mixture luminescent layer, a hole blocking layer, an electron injection layer and a cathode are formed on an anode. The mixture luminescent layer...
7199401 Light-emitting semiconductor device  
An LED includes a semiconductor region having an active layer sandwiched between two confining layers of opposite conductivity types for generating heat. A cathode is arranged centrally on one of...
7196348 GaN system semiconductor light emitting device excellent in light emission efficiency and light extracting efficiency  
Although there is provided a high light transmittance of an emitted light by a ITO electrode film conventionally employed, there occurs a formation of a Schottky type contact between the ITO...
7193236 Light emitting device using nitride semiconductor and fabrication method of the same  
A nitride based 3-5 group compound semiconductor light emitting device comprising: a substrate; a buffer layer formed above the substrate; a first In-doped GaN layer formed above the buffer layer;...
7193247 Gallium nitride compound semiconductor device  
A GaN compound semiconductor device can be capable of free process design and can have optimum device characteristics. The device can include a group III nitride compound semiconductor laminate...
7190005 GaN LED with solderable backside metal  
A light-emitting element ( 24 ) is disclosed. A light emitting diode (LED) includes a sapphire substrate ( 26 ) having front and back sides ( 33, 35 ), and a plurality of semiconductor layers ( 28,...
7190001 GaN based semiconductor light emitting device and method of making the same  
A GaN based semiconductor light emitting device has: an active layer disposed between an n-type layer and a p-type layer; and a polycrystalline nitride based semiconductor uneven layer disposed...
7186624 Bipolar transistor with lattice matched base layer  
A semiconductor material which has a high carbon dopant concentration and is composed of gallium, indium, arsenic and nitrogen is disclosed. The material is useful in forming the base layer of...
7183579 Gallium nitride (GaN)-based semiconductor light emitting diode and method for manufacturing the same  
Disclosed are a GaN-based semiconductor light emitting diode and a method for manufacturing the same. The GaN-based semiconductor light emitting diode includes a substrate on which a GaN-based...
7183008 Electroluminescent materials  
A novel electroluminescent compound which emits blue or blueish purple light is a complex of a lanthanide or actinide and an organic complex e.g. mono(bathophenanthroline) thoriumIV chloride or...
7183578 Semiconductor apparatus, method for growing nitride semiconductor and method for producing semiconductor apparatus  
A semiconductor apparatus includes a substrate made of a diboride single crystal expressed by a chemical formula XB 2 , in which X includes at least one of Ti, Zr, Nb and Hf, a semiconductor buffer...
7180154 Integrated circuit devices having corrosion resistant fuse regions and methods of fabricating the same  
Integrated circuit devices are provided including an integrated circuit substrate and first through fourth spaced apart lower interconnects on the integrated circuit substrate. The third and fourth...
7180101 Semiconductor device, and method for manufacturing the same  
The present invention provides a semiconductor device including an element that is considered to have less environmental problem (for example iron), and a method for manufacturing the same. More...
7180094 Nitride-based light emitting device and method of manufacturing the same  
Provided are a nitride-based light emitting device and a method of manufacturing the same. The nitride-based light emitting device has a structure in which at least an n-cladding layer, an active...
7179667 Semiconductor base material and method of manufacturing the material  
As shown in FIG. 1 ( a ), substrate 1 having a growth plane having a concavo-convex surface is used. When GaN group crystal is vapor phase grown using this substrate, the concavo-convex shape...
7176479 Nitride compound semiconductor element  
A nitride compound semiconductor element having improved characteristics, productivity and yield. A nitride compound semiconductor element includes: a sapphire substrate; a first single crystalline...
7176499 Method of manufacturing a semiconductor light emitting device, semiconductor light emitting device, method of manufacturing a semiconductor device, semiconductor device, method of manufacturing a device, and device  
When a semiconductor light emitting device or a semiconductor device is manufactured by growing nitride III-V compound semiconductor layers, which will form a light emitting device structure or a...
7176497 Group III nitride compound semiconductor  
An Al 0.15 Ga 0.85 N layer 2 is formed on a silicon substrate 1 in a striped or grid pattern. A GaN layer 3 is formed in regions A where the substrate 1 is exposed and in regions B which...
7173286 Semiconductor devices formed of III-nitride compounds, lithium-niobate-tantalate, and silicon carbide  
Semiconductor devices formed by depositing III-nitride compounds on lithium niobate and/or lithium tantalate substrates are disclosed. Also disclosed, are semiconductor devices formed by depositing...
7172823 Blue electroluminescent polymer and organo-electroluminescent device employing the same  
A blue electroluminescent polymer having an indolocarbazole unit in the backbone of a polyarylene polymer and an organo-electroluminescent device using the same.
7170096 Antimonide-based optical devices  
An optical device includes an antimonide-containing substrate, and an antimonide-containing n-doped layer provided on the substrate. The optical device further includes an antimonide-containing...
7170086 Organic electroluminescent device, electronic device and manufacturing method thereof  
An organic electroluminescent (EL) device includes a substrate, a first electrode disposed on the substrate, an emission layer comprising a polymer disposed on the first electrode, a second...
7170097 Inverted light emitting diode on conductive substrate  
An electronic device includes a conductive n-type substrate, a Group III nitride active region, an n-type Group III-nitride layer in vertical relationship to the substrate and the active layer, at...
7166874 Nitride semiconductor with active layer of quantum well structure with indium-containing nitride semiconductor  
A nitride semiconductor device has a nitride semiconductor layer structure. The structure includes an active layer of a quantum well structure containing an indium-containing nitride semiconductor....
7166870 Light emitting devices with improved extraction efficiency  
Light-emitting devices, and related components, systems and methods are disclosed.
7166871 Light emitting systems  
Light-emitting systems, and related components, systems and methods are disclosed.
7161301 Nitride light-emitting device having an adhesive reflecting layer  
A nitride light-emitting device having an adhesive reflecting layer includes a transparent adhesive layer, a nitride light-emitting stack layer and a metal reflecting layer. The transparent...
7157741 Silicon optoelectronic device and optical signal input and/or output apparatus using the same  
A silicon optoelectronic device and an optical transceiver, wherein the silicon optoelectronic device includes an n- or p-type silicon-based substrate and a doped region formed in a first surface...
7154127 Semiconductor light emitting device  
A semiconductor laminating portion including a light emitting layer forming portion having at least an n-type layer and a p-type layer is formed on a semiconductor substrate. A current blocking...
7154128 Nitride semiconductor growth method, nitride semiconductor substrate, and nitride semiconductor device  
A method of growing a nitride semiconductor crystal which has very few crystal defects and can be used as a substrate is disclosed. This invention includes the step of forming a first selective...
7151284 Structures for light emitting devices with integrated multilayer mirrors  
A substrate for supporting epitaxial growth of light emitting semiconductor devices having a non-crystalline multilayer reflection controlling stack under a thin layer of single crystal silicon is...
7148520 Diode having vertical structure and method of manufacturing the same  
A light emitting diode includes a conductive layer, an n-GaN layer on the conductive layer, an active layer on the n-GaN layer, a p-GaN layer on the active layer, and a p-electrode on the p-GaN...
7148514 Nitride semiconductor light emitting diode and fabrication method thereof  
The invention relates to a nitride semiconductor LED and a fabrication method thereof. In the LED, a first nitride semiconductor layer, an active region a second nitride semiconductor layer of a...
7141830 Semiconductor light emitting device and method of making the same  
The invention provides a semiconductor light emitting device and the method of making it. The semiconductor light emitting device, according to the invention, includes an undoped In x GA y Al 2 N...
7141313 Light emitting device  
There are provided a light emitting device and an electronic device, which are light, have low consumption power and a low cost. When an organic light emitting material ( 1204 b ) is included in...
7141827 Semiconductor light emitting device and optical disc apparatus using the same  
AlGaInP system laser device ( 24 ) and AlGaAs system laser device ( 26 ) are arranged so that respective stripes ( 28, 30 ) are parallel to each other. The AlGaInP system laser device ( 24 ) is...
Matches 251 - 300 out of 1434 < 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 >