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6770914 |
III nitride semiconductor substrate for ELO
A III nitride semiconductor substrate for ELO is provided for forming a III nitride film whose surface is controlled independent of the film's thickness. A III nitride underlayer including at least...
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6768135 |
Dual process semiconductor heterostructures
A method for forming an epitaxial layer involves depositing a buffer layer on a substrate by a first deposition process, followed by deposition of an epitaxial layer by a second deposition process....
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6764368 |
Method of fabricating a cathodo-/electro-luminescent device using a porous silicon/porous silicon carbide as an electron emitter
The invention consists of a flat panel display device that combines the simplicity of manufacture of a TFEL display with the phosphor stimulation capabilities of an FED. A phosphor such a ZnS:Mn...
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6765233 |
Semiconductor substrate, light emitting device, and method for producing the same
A method for producing a semiconductor substrate of the present invention, includes the steps: forming a first patterned mask containing a material having a growth suppressing effect on a lower...
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6762438 |
Organic electroluminescent layer with oligomer hole injection layer
The present invention provides an organic electroluminescence element which includes an anode and a cathode which are opposite to each other, and a hole injection layer and a luminous layer which...
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6759147 |
Electroluminescent device
A description is given of an electroluminescent device ( 1 ) comprising an active layer ( 7 ) of an organic charge-transfer compound having a donor-bridge-acceptor structure in a polymer matrix. A...
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6759690 |
II-VI semiconductor device with BeTe buffer layer
A II-VI semiconductor device includes a stack of II-VI semiconductor layers electrically connected to a top electrical contact. A GaAs substrate is provided which supports the stack of II-VI...
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6759139 |
Nitride-based semiconductor element and method of forming nitride-based semiconductor
A nitride-based semiconductor element enabling formation of a nitride-based semiconductor layer having low dislocation density, consisting of a material different from that of an underlayer, on the...
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6756474 |
Aqueous conductive dispersions of polyaniline having enhanced viscosity
The present invention is generally directed to a polyaniline/high molecular weight polymeric sulfonic acid complex made by oxidative polymerization, and aqueous polyaniline dispersions, where the...
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6756610 |
Light irradiating device
A light irradiating device ( 68 ) having the good radiation characteristic comprises a plurality of conductive paths ( 51 ) that are electrically separated, a photo semiconductor chips ( 65 ) fixed...
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6756609 |
Semiconductor light receiving element provided with acceleration spacer layers between plurality of light absorbing layers and method for fabricating the same
A semiconductor light receiving element has an n electrode, an n-type semiconductor doped layer or a non-doped layer provided above the n electrode, a semiconductor light absorbing layer provided...
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6753552 |
Growth-selective structure of light-emitting diode
A growth-selective structure of LED is created by growing first and patterning an oxidation layer on a substrate, then applying a lateral-growth technology to form a buffer layer on the oxidation...
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6753545 |
Light-emitting device with quantum dots and holes, and its fabricating method
A method is provided for forming quantum holes of nanometer levels. In an ion beam scanner, ions are projected from an ion gun onto a semiconductor substrate. During the projection, ions are...
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6750478 |
Semiconductor laser device and method for suppressing fabry perot oscillations
A semiconductor laser device includes an active layer configured to radiate light, a light reflecting facet positioned on a first side of the active layer, and a light emitting facet positioned on...
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6744071 |
Nitride semiconductor element with a supporting substrate
A highly efficient nitride semiconductor element having an opposed terminal structure, whose terminals face each other. The nitride semiconductor element includes a conductive layer, a first...
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6744077 |
Selective filtering of wavelength-converted semiconductor light emitting devices
A light emitting device includes a semiconductor light emitting device chip having a top surface and a side surface, a wavelength-converting material overlying at least a portion of the top surface...
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6737669 |
Semiconductor light-emitting device
A semiconductor light-emitting device has a lower clad layer, an active layer, a p-type GaP layer and an upper clad layer, which are successively formed on an n-type GaAs substrate. The p-type GaP...
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6737679 |
Optoelectronic unit and transparent conductive substrate of the same
An optoelectronic unit and a transparent conductive substrate of the same are disclosed. The transparent conductive substrate comprises a transparent plate, a transparent electrode film, an...
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6737678 |
Nitride semiconductor device and fabrication method thereof
In a wafer having an LD structure 251 formed on a GaN-based substrate 250 , cleavage guide grooves 252 are formed in its surface by scribing from above the LD structure 251 with a diamond...
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6737290 |
Surface-emitting semiconductor laser device and method for fabricating the same, and surface-emitting semiconductor laser array employing the laser device
A surface-emitting semiconductor laser device having reduced device resistance, a method for fabricating the device and a surface-emitting semiconductor laser array employing the device are...
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6734519 |
Waveguide photodiode
A waveguide photodiode includes an n-type cladding layer, an n-type light confining layer, an i-type light absorption layer, a p-type light confining layer, and a p-type cladding layer buried in an...
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6734469 |
EL phosphor laminate thin film and EL device
An object of the invention is to provide an EL phosphor laminate thin film and EL device which can emit light at a high luminance. The object is achieved by stacking a phosphor thin film and a...
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6730929 |
Organic electroluminescent device
An organic electroluminescent device comprises a pair of electrodes and a layer structure provided between the paired electrodes and including, at least, an emission layer comprising a specific...
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6730933 |
Hybrid integrated circuit device
In a light irradiation device in which a light emitting element is attached to a printed circuit board, the heat radiation properties are enhanced, and improvement of the light emitting efficiency,...
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6730418 |
Quinoline derivatives and organic electroluminescent devices
Quinoline derivatives represented by formula (1) wherein two or more of substituents R 1 to R 7 are each a group of formula (2). In general formula (2), Q is a carbo- or hetero-aryl group; and...
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6730944 |
InP based high temperature lasers with InAsP quantum well layers and barrier layers of Gax(ALIn)1-xP
The invention provides a laser structure that operates at a wavelength of 1.3 μm and at elevated temperatures and a method of making same. The laser structure includes a quantum well layer of...
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6730938 |
Semiconductor light emitting device and method for manufacturing the same
On a semiconductor substrate ( 1 ), there are laminated a light emitting layer forming portion ( 11 ) having at least an n-type layer ( 3 ) and a p-type layer ( 5 ) and a window layer ( 6 ), and a...
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6730943 |
Thin semiconductor GaInN layer, method for preparing same, light-emitting diode comprising said layer and illumination device
Thin, single semi conducting layer of GaInN, possibly containing a small percentage of arsenic, phosphorus or antimony, the said layer emitting at least two visible lights with determined colors...
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6727522 |
Transistor and semiconductor device
A transistor is provided, which is entirely and partially transparent by the use of a transparent channel layer made of zinc oxide or the like. A channel layer 11 formed of a transparent...
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6727109 |
Method of fabricating long wavelength vertical-cavity surface-emitting lasers
The present invention relates to a method of fabricating vertical-cavity surface emitting lasers being watched as a light source for long wavelength communication. The present invention includes...
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6727523 |
METHOD OF MANUFACTURING CRYSTAL OF III-V COMPOUNDS OF THE NITRIDE SYSTEM, CRYSTAL SUBSTRATE OF III-V COMPOUNDS OF THE NITRIDE SYSTEM, CRYSTAL FILM OF III-V COMPOUNDS OF THE NITRIDE SYSTEM, AND METHOD OF MANUFACTURING DEVICE
A base crystal layer is formed on the surface of a basal body by growing, e.g., GaN comprising a III-V compound by MOCVD and then the base crystal layer 12 is etched. An intermediate crystal...
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6723454 |
Luminescent device
Luminescent device containing a luminescent material comprising organic lanthanide complexes comprising organic ligands of which at least one organic ligand is an aromatic ketone comprising a...
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6720090 |
Organic light emitting diode devices with improved luminance efficiency
An organic light emitting device includes a substrate, an anode and a cathode disposed over the substrate; a luminescent layer disposed between the anode and the cathode wherein the luminescent...
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6720572 |
Organic light emitters with improved carrier injection
A light emitting device with improved carrier injection. The device has a layer of organic light emitting material and a layer of organic semiconductor material that are interposed between first...
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6720584 |
Nitride type compound semiconductor light emitting element
In a nitride type compound semiconductor light emitting element, a phosphor layer is formed in a multilayer constituting the light emitting element. A highly-reflective layer is formed at a side...
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6720093 |
Light-emitting dendrimers
Light emitting compounds are disclosed for use in light emitting devices. These compounds have the formula A compound having the formula: CORE [DENTRITE] n in which CORE represents an atom or...
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6716662 |
Production method for organic electroluminescent device
A production method for an organic electroluminescent device includes the steps of: forming a first electrode on a substrate, forming an organic film including a light emitting layer on the first...
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6717185 |
Light emitting devices with Group III nitride contact layer and superlattice
The present invention is a semiconductor structure for light emitting devices that can emit in the red to ultraviolet portion of the electromagnetic spectrum. The semiconductor structure includes a...
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6713781 |
Organic light-emitting device having phenanthroline-fused phenazine
An organic light-emitting device (OLED) in which a phenanthroline-fused phenazine based compound is used an emissive layer, an electron transport layer, a hole-blocking layer, and/or a host...
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6712478 |
Light emitting diode
A light emitting diode with strained layer superlatices (SLS) crystal structure is formed on a substrate. A nucleation layer and a buffer layer are sequentially formed on the substrate, so as to...
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6710366 |
Nanocomposite materials with engineered properties
The invention relates to a nanocomposite material. The nanocomposite material comprises a matrix material and a plurality of quantum dots dispersed in the matrix material. The nanocomposite...
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6707069 |
Light emission diode package
An LED package, made of ceramic substrates and having a reflective metal plate, has a first ceramic substrate, which has a chip mounting area on its top surface, and is provided with a...
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6703645 |
Spin filter
A spin filter is composed of a first magnetic semiconductor multi-quantum well structure, a second magnetic semiconductor multi-quantum well structure and a non-magnetic semiconductor quantum well...
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6703253 |
Method for producing semiconductor light emitting device and semiconductor light emitting device produced by such method
A method for producing a semiconductor light emitting device, including at least one first column-like multi-layer structure provided on a substrate and containing nitride-based semiconductor...
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6700139 |
GaP-base semiconductor light emitting device
The main surface on the side of a p-type layer of a GaP-base semiconductor is defined as a first main surface, and the main surface opposite thereto as a second main surface. The second main...
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6699599 |
Deuterated semi-conducting organic compounds used for opto-electronic devices
Organic semiconductors consisting of conjugated chromophores wherein one or more hydrogen atoms are deuterated are disclosed. Methods of preparing such organic semiconductors are described. The...
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6696699 |
Luminescent display device and method of manufacturing same
A luminescent display device comprises a resin substrate having one and another surfaces, an auxiliary electrode made of metal and disposed on the one surface of the resin substrate, a transparent...
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6696704 |
Composite light-emitting device, semiconductor light-emitting unit and method for fabricating the unit
A composite light-emitting device according to the present invention includes a light-emitting element including a transparent substrate and a multilayer structure formed on the substrate. The...
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6693308 |
Power SiC devices having raised guard rings
Silicon carbide semiconductor power devices having epitaxially grown guard rings edge termination structure are provided. Forming the claimed guard rings from an epitaxially grown SiC layer avoids...
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6693307 |
Semiconductor light emitting element
In a light emitting element using nitride compound semiconductors, an active layer made of a mixed crystal containing In additionally contains at least Al or B as a component of the mixed crystal...
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