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6987281 Group III nitride contact structures for light emitting devices  
A superlattice contact structure for light emitting devices includes a plurality of contiguous p-type Group III nitride layers. The contact structure may be formed of p-type indium nitride,...
6984850 Semiconductor light-emitting diode  
A light-emitting diode includes: a semiconductor substrate; and a layered structure, made of an AlGaInP type compound semiconductor material and provided on the semiconductor substrate. The layered...
6984462 Organic electroluminescent devices using double-spiro organic compounds  
Disclosed are double-spiro organic compounds and an organic electroluminescence (EL) device using the same. The double-spiro organic compounds are configured to have at least three planar and...
6979842 Opto-electronic component with radiation-transmissive electrical contact layer  
An optoelectronic component with an epitaxial semiconductor layer sequence having an active zone that emits electromagnetic radiation, and at least one electrical contact region having at least one...
6979835 Gallium-nitride based light-emitting diode epitaxial structure  
An epitaxial structure for the GaN-based LED is provided. The GaN-based LED uses a substrate usually made of sapphire or silicon-carbide (SiC). On top of the substrate, the GaN-based LED contains...
6974974 Light emitting devices with layered III -V semiconductor structures, and modules and systems for computer, network and optical communication, using such devices  
A semiconductor light emitting device is disclosed, including a semiconductor substrate, an active region comprising a strained quantum well layer, and a cladding layer for confining carriers and...
6972438 Light emitting diode with porous SiC substrate and method for fabricating  
A method and apparatus for forming a porous layer on the surface of a semiconductor material wherein an electrolyte is provided and is placed in contact with one or more surfaces of a layer of...
6970490 Organic light emitting devices based on the formation of an electron-hole plasma  
When the density of excitons in an organic single crystal (including the linear acenes, polyacenes, and thiophenes) approaches the density of molecular sites, an electron-hole plasma may form in...
6967353 Semiconductor light emitting device and fabrication method thereof  
A semiconductor light emitting device includes a crystal layer formed on a substrate, the crystal layer having a tilt crystal plane tilted from the principal plane of the substrate, and a first...
6967359 Nitride semiconductor substrate production method thereof and semiconductor optical device using the same  
Disclosed are a nitride semiconductor substrate and a production method thereof. Seed crystals made of GaN or AlGaN with a relatively low AlN molar fraction is selectively grown on a first...
6967355 Group III-nitride on Si using epitaxial BP buffer layer  
A semiconductor device and method for forming the same includes a silicon (111) single crystal substrate, and an epitaxial boron phosphide (BP) layer disposed on the substrate. A group III-nitride...
6965128 Structure and method for fabricating semiconductor microresonator devices  
High quality epitaxial layers of monocrystalline materials ( 26 ) can be grown overlying monocrystalline substrates ( 22 ) such as large silicon wafers by forming a compliant substrate for growing...
6962758 Organic light-emitting device using iptycene derivatives  
An organic light-emitting device (OLED) in which an iptycene derivative is used as the emissive layer and/or one or more of the charge transport layers, or as a host material for one or more of...
6963081 Interfacial trap layer to improve carrier injection  
In an embodiment of the invention, an electronic device includes an interfacial layer with traps. This interfacial layer is between an electrode and an organic layer, and if the electrode was...
6958494 Light emitting diodes with current spreading layer  
A light-emitting diode (LED) for both AlGaInP- and GaN-based materials needs a good transparent current spreading layer to disseminate electrons or holes from the electrode to the active layer. The...
6958497 Group III nitride based light emitting diode structures with a quantum well and superlattice, group III nitride based quantum well structures and group III nitride based superlattice structures  
A light emitting diode is provided having a Group III nitride based superlattice and a Group III nitride based active region on the superlattice. The active region has at least one quantum well...
6956250 Gallium nitride materials including thermally conductive regions  
The invention includes providing gallium nitride materials including thermally conductive regions and methods to form such materials. The gallium nitride materials may be used to form semiconductor...
6956884 Semiconductor light emitting device  
A second cladding layer composed of p-AlGaN and a second contact layer composed of p-GaN are formed in this order on a light emitting layer composed of a nitride based semiconductor. A...
6956246 Resonant cavity III-nitride light emitting devices fabricated by growth substrate removal  
A semiconductor light emitting device includes an n-type region, a p-type region, and light emitting region disposed between the n- and p-type regions. The n-type, p-type, and light emitting...
6956241 Semiconductor light emitting element with improved light extraction efficiency  
A high-luminance light emitting element is manufactured by a method comprising: forming a light emitting layer on a first surface of a GaP substrate including the first surface and a second surface...
6956245 Group III nitride compound semiconductor light-emitting element  
A Group III nitride compound semiconductor light-emitting element has a reflecting surface on a side opposite to a main light-emitting surface of the element viewed from a light-emitting layer. The...
6953952 Semiconductor device and an optical device using the semiconductor device  
A semiconductor device comprising a semiconductor element and a support member having a recess for housing the semiconductor element is disclosed. The support member includes lead electrodes and a...
6953729 Heterojunction field effect transistor and manufacturing method thereof  
In a heterojunction FET in which source and drain areas are formed by carrying out high temperature annealing process after carrying out ion implantation in areas to be formed into source and drain...
RE38805 Semiconductor device and method of fabricating the same  
A semiconductor device comprises a single crystal substrate, a nucleus formation buffer layer formed on the single crystal substrate, and a lamination layer including a plurality of Al 1-x-y Ga x...
6952490 Fingerprint recognizing device having patterned floating electrodes and fabricating method therefor  
A fingerprint recognizing device having patterned floating electrodes is disclosed. The fingerprint recognizing device includes a transparent electrode layer to which one terminal of an AC power...
6946318 Method of forming GE photodetectors  
A photodetector device includes a plurality of Ge epilayers that are grown on a substrate and annealed in a defined temperature range. The Ge epilayers form a tensile strained Ge layer that allows...
6946687 Radiation-emitting semiconductor chip with a radiation-emitting active layer  
Recesses interrupt an active layer on a semiconductor chip to improve the coupling out of light. As a result, side faces of the active layer appear, as seen from a light-generating point, at a...
6946682 Robust group III light emitting diode for high reliability in standard packaging applications  
A physically robust light emitting diode is disclosed that offers high-reliability in standard packaging and that will withstand high temperature and high humidity conditions. The diode comprises a...
6943381 III-nitride light-emitting devices with improved high-current efficiency  
A light-emitting semiconductor device comprises a III-Nitride active region and a III-Nitride layer formed proximate to the active region and having a thickness that exceeds a critical thickness...
6940100 Group III-V nitride semiconductor light-emitting device which allows for efficient injection of electrons into an active layer  
A semiconductor light-emitting device of Group III-V compound semiconductors includes a quantum well layer, which is formed over a substrate and includes a barrier layer and a well layer that are...
6940103 Nitride semiconductor growth method, nitride semiconductor substrate and nitride semiconductor device  
A method of growing a nitride semiconductor crystal which has very few crystal defects and can be used as a substrate is disclosed. This invention includes the step of forming a first selective...
6939728 Method of fabricating silicon emitter with a low porosity heavily doped contact layer  
A high emission electron emitter and a method of fabricating a high emission electron emitter are disclosed. A high emission electron emitter includes an electron injection layer, an active layer...
6936851 Semiconductor light-emitting device and method for manufacturing the same  
Semiconductor light emitting device and methods for its manufacture comprises a plurality of textured district defined on the surface of the substrate. The initial inclined layer deposition serves...
6936864 Semiconductor light emitting element  
A semiconductor light emitting element comprising: a first layer; a semiconductor light emitting layer; a current blocking layer; a second layer; a first electrode; and a second electrode is...
6936355 Organic photoluminescent polymers with improved stability  
A luminescent polymer, suitable for use in an active layer of an organic light-emitting device, organic solid state lasers, a photovoltaic cell or an electrochromic display and exhibiting good...
6936859 Light-emitting semiconductor device using group III nitride compound  
A flip chip type of light-emitting semiconductor device using group III nitride compound comprising a thick positive electrode. The positive electrode, which is made of at least one of silver (Ag),...
6936865 Visible light transmitting structure with photovoltaic effect  
A visible light transmitting structure with photovoltaic effect comprises a transparent substrate and a PN junction layer having a P type semiconductor and an N type semiconductor, which is formed...
6936860 Light emitting diode having an insulating substrate  
An LED includes an insulating substrate; a buffer layer positioned on the insulating substrate; an n + -type contact layer positioned on the buffer layer, the contact layer having a first surface...
6933522 Organic electroluminescent device and method for producing the same  
An organic electroluminescent device with the feature of three-wavelength luminescence is provided. The device includes a hole transporting layer, an electron blocking layer, a first host material...
6933535 Light emitting devices with enhanced luminous efficiency  
A structure includes semiconductor light emitting device and a wavelength converting layer. The wavelength converting layer converts a portion of the light emitted from the semiconductor light...
6930329 Method for manufacturing gallium nitride compound semiconductor  
An Al 0.15 Ga 0.85 N layer 2 is formed on a silicon substrate 1 in a striped or grid pattern. A GaN layer 3 is formed in regions A where the substrate 1 is exposed and in regions B which...
6927423 Semiconductor element structure, electron emitter and method for fabricating a semiconductor element structure  
A mask layer with an opening is formed on a main surface of a silicon substrate, which is exposed in the opening. Then, a hexagonal pyramidal island-shaped portion is formed from a first...
6927422 Double heterojunction light emitting diodes and laser diodes having quantum dot silicon light emitters  
A direct-wafer-bonded, double heterojunction, light emitting semiconductor device includes an ordered array of quantum dots made of one or more indirect band gap materials selected from a group...
6927426 Semiconductor light-emitting device for optical communications  
A semiconductor light-emitting device of this invention includes at least a first cladding layer formed on a substrate, a light-emitting structure including an active layer made of In 1−X−Y Ga...
6924504 Organic light emitting diode and method for producing the same  
An organic light emitting diode (OLED) includes a substrate having a first electrode layer formed thereon in a predetermined pattern, an insulator layer defining the upper portion of the substrate...
6924511 Vertical cavity surface emitting semiconductor laser with triangle prism optical cavity resonator  
The invention provides a method and device for light generation wherein an embodiment of the device comprises a lower electrode, a conducting substrate formed on the lower electrode, and a triangle...
6924512 Nitride semiconductor light-emitting device and optical apparatus including the same  
A nitride semiconductor light emitting device includes an emission layer ( 106 ) having a multiple quantum well structure where a plurality of quantum well layers and a plurality of barrier layers...
6921924 Semiconductor light-emitting device  
A method for manufacturing a semiconductor light-emitting device. The semiconductor light-emitting device has a substrate, and a semiconductor layer, a n-type semiconductor layer, and a p-type...
6921589 Electroluminescent elements  
The present invention relates to an electroluminescent element formed by placing a luminescing substance between an anode and a cathode, such that when electrical energy is applied to the element,...
6921928 Nitride semiconductor element  
In the nitride semiconductor device having a p-type nitride semiconductor layer, an electrode including at least rhodium and iridium is formed on the p-type nitride semiconductor layer. By this...
Matches 451 - 500 out of 1443 < 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 >