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8173989 Resistive random access memory device and methods of manufacturing and operating the same  
Provided may be a resistive random access memory (RRAM) device and methods of manufacturing and operating the same. The resistive random access memory device may include at least one first...
8143610 Semiconductor phase-change memory device  
A semiconductor phase-change memory device comprises a data line disposed on a semiconductor substrate and a data storage structure disposed under the data line and having a concave portion...
8138574 PCM with poly-emitter BJT access devices  
A phase change memory (PCM) includes an array comprising a plurality of memory cells, a memory cell comprising a phase change element (PCE); and a PCE access device comprising a bipolar junction...
8134137 Memory device constructions, memory cell forming methods, and semiconductor construction forming methods  
Memory device constructions include a first column line extending parallel to a second column line, the first column line being above the second column line; a row line above the second column line...
8133793 Carbon nano-film reversible resistance-switchable elements and methods of forming the same  
Methods of forming a microelectronic structure are provided, the microelectronic structure including a first conductor, a discontinuous film of metal nanoparticles disposed on a surface above the...
8125021 Non-volatile memory devices including variable resistance material  
A non-volatile memory device includes a first oxide layer, a second oxide layer and a buffer layer formed on a lower electrode. An upper electrode is formed on the buffer layer. In one example, the...
8115189 Silica nanowire comprising silicon nanodots and method of preparing the same  
Provided are a silica nanowire that includes silicon nanodots and a method of preparing the same. The silica nanowire has excellent capacitance characteristics and improved light absorption...
8097872 Modifiable gate stack memory element  
An apparatus and method for storing information are provided, including using an integrated circuit including a transistor having a channel, a gate oxide layer, a gate electrode, and a modifiable...
8093688 Device comprising an ohmic via contact, and method of fabricating thereof  
Device comprising an ohmic via contact, and method of fabricating thereof. A preferred embodiment comprises forming a metal layer over a substrate, forming a conductive barrier layer over the metal...
8076664 Phase change memory with layered insulator  
A phase change memory may be formed with an insulator made up of two different layers having significantly different thermal conductivities. Pores may be formed within the stack of insulating...
8048684 Structure and method for manipulating spin quantum state through dipole polarization switching  
Disclosed herein is a structure and method for manipulating a spin state, regarded as important in the field of spintronics, by which the distribution of spin-up and spin-down states of carriers in...
8022383 Two-terminal resistance switching element with silicon, and semiconductor device  
A two-terminal resistance switching element, wherein two silicon films each doped with an impurity are arranged with a gap width in the order of nanometers. The gap width is in the range of from...
7994491 PCRAM device with switching glass layer  
A method of forming a memory device, such as a PCRAM, including selecting a chalcogenide glass backbone material for a resistance variable memory function and devices formed using such a method.
7924603 Resistance variable memory with temperature tolerant materials  
A PCRAM memory device having a chalcogenide glass layer, preferably comprising antimony selenide having a stoichiometric formula of about Sb2Se3, and a metal-chalcogenide layer and methods of...
7910913 Phase change memory devices  
A phase change memory device includes a switching device and a storage node connected to the switching device. The storage node includes a bottom stack, a phase change layer disposed on the bottom...
7888719 Semiconductor memory structures  
A semiconductor structure includes a first conductive layer coupled to a transistor. A first dielectric layer is over the first conductive layer. A second conductive layer is within the first...
7879263 Method and solution to grow charge-transfer complex salts  
The present disclosure relates to methods and solutions for growing metal charge-transfer salts on a metal surface, such as a metal layer at the bottom of a via hole. The method makes use of a...
7868310 Resistance variable memory device and method of fabrication  
Methods and apparatus for providing a resistance variable memory device with agglomeration prevention and thermal stability. According to one embodiment, a resistance variable memory device is...
7838887 Source/drain carbon implant and RTA anneal, pre-SiGe deposition  
A semiconductor device system, structure, and method of manufacture of a source/drain to retard dopant out-diffusion from a stressor are disclosed. An illustrative embodiment comprises a...
7811905 Nonvolatile memory device and fabrication method thereof  
A nonvolatile memory device and a method for its fabrication may ensure uniform operating characteristics of ReRAM. The ReRam may include a laminated resistance layer that determines phase of ReRAM...
7795605 Phase change material based temperature sensor  
A block of phase change material located in a semiconductor chip is reset to an amorphous state. The block of phase change material may be connected to an internal resistance measurement circuit...
7763878 Phase changeable memory device structures  
A phase-changeable memory device may include a substrate, an insulating layer on the substrate, first and second electrodes, and a pattern of a phase-changeable material between the first and...
7759665 PCRAM device with switching glass layer  
A memory device, such as a PCRAM, including a chalcogenide glass backbone material with germanium telluride glass and methods of forming such a memory device.
7750351 Epitaxial substrate for field effect transistor  
An epitaxial crystal for a field effect transistor which has a nitride-based III-V group semiconductor epitaxial crystal grown on a SiC single crystal base substrate having micropipes by use of an...
7739636 Design structure incorporating semiconductor device structures that shield a bond pad from electrical noise  
Design structure embodied in a machine readable medium for designing, manufacturing, or testing a design. The design structure includes active circuitry on a substrate, a bond pad carried by the...
7718464 Integrated circuit fabricated using an oxidized polysilicon mask  
An integrated circuit includes a first electrode, a second electrode, and dielectric material including an opening. The opening is defined by etching the dielectric material based on an oxidized...
7714311 Memory device, memory circuit and semiconductor integrated circuit having variable resistance  
A first variable resistor (5) is connected between a first terminal (7) and a third terminal (9) and increases/reduces its resistance value in accordance with the polarity of a pulse voltage...
7667221 Phase change memory devices and methods for fabricating the same  
In a phase change memory, an interlayer insulating layer is disposed on a substrate. A heater plug includes a lower portion disposed in a contact hole penetrating the interlayer insulating layer...
7655942 Fiber incorporating quantum dots as programmable dopants  
A programmable dopant fiber includes a plurality of quantum structures formed on a fiber-shaped substrate, wherein the substrate includes one or more energy-carrying control paths, which pass...
7550755 Semiconductor device with tunable energy band gap  
The present invention relates to a semiconductor device in which energy band gap can be reversibly varied. An idea of the present invention is to provide a device, which is based on a...
7521760 Integrated circuit chip with FETs having mixed body thickness and method of manufacture thereof  
An Integrated Circuit (IC) chip that may be a bulk CMOS IC chip with silicon on insulator (SOI) Field Effect Transistors (FETs) and method of making the chip. The IC chip includes areas with...
7508049 Semiconductor optical device  
A semiconductor optical device comprises a first conductive type III-V compound semiconductor layer, a second conductive type III-V compound semiconductor layer, and an active region. The first...
7504288 Method for laser-processing semiconductor device  
A linear laser light which has an energy and is to be scanned is irradiated to a semiconductor device formed on a substrate, and then the substrate is rotated to irradiate to the semiconductor...
7494546 Method of growing insulating, semiconducting, and conducting group III-nitride thin films and coatings, and use as radiation hard coatings for electronics and optoelectronic devices  
The present invention describes use of electron beam evaporation method for fabrication of group III-nitride thin films. The fabricated thin films found to have desirable crystalline and optical...
7494545 Epitaxial deposition process and apparatus  
An epitaxial deposition process including a dry etch process, followed by an epitaxial deposition process is disclosed. The dry etch process involves placing a substrate to be cleaned into a...
7491962 Resistance variable memory device with nanoparticle electrode and method of fabrication  
A chalcogenide-based programmable conductor memory device and method of forming the device, wherein a nanoparticle is provided between an electrode and a chalcogenide glass region. The method of...
7482621 Rewritable nano-surface organic electrical bistable devices  
A bistable electrical device that is convertible between a low resistance state and a high resistance state. The device includes at least one layer of organic low conductivity material that is...
7482615 High performance MOSFET comprising stressed phase change material  
The present invention relates to semiconductor devices that each comprises at least one field effect transistor (FET) containing an intrinsically stressed phase change material layer. The...
7449710 Vacuum jacket for phase change memory element  
A memory device including a phase change element and a vacuum jacket. The device includes a first electrode element; a phase change element in contact with the first electrode element; an upper...
7446335 Process and apparatus for forming nanoparticles using radiofrequency plasmas  
Methods and apparatus for producing nanoparticles, including single-crystal semiconductor nanoparticles, are provided. The methods include the step of generating a constricted radiofrequency plasma...
7423282 Memory structure and method of manufacture  
A solid state electrolyte memory structure includes a solid state electrolyte layer, a metal layer on the solid state electrolyte layer, and an etch stop layer on the metal layer.
7420261 Bulk nitride mono-crystal including substrate for epitaxy  
The invention relates to a substrate for epitaxy, especially for preparation of nitride semiconductor layers. Invention covers a bulk nitride mono-crystal characterized in that it is a mono-crystal...
7405418 Memory device electrode with a surface structure  
The invention relates to a memory device electrode, in particular for a resistively switching memory device, wherein the surface of the electrode is provided with a structure, in particular...
7402829 Structured silicon anode  
A silicon/lithium battery can be fabricated from a silicon substrate. This allows the battery to be produced as an integrated unit on a chip. The battery includes a silicon anode formed from...
7397060 Pipe shaped phase change memory  
A memory cell device includes a bottom electrode, pipe shaped member comprising phase change material and a top electrode in contact with the pipe-shaped member. An electrically and thermally...
7394087 Phase-changeable memory devices and methods of forming the same  
A phase-changeable memory device includes a substrate having a contact region on an upper surface thereof. An insulating interlayer on the substrate has an opening therein, and a lower electrode is...
7394088 Thermally contained/insulated phase change memory device and method (combined)  
A memory device with improved heat transfer characteristics. The device first includes a dielectric material layer; first and second electrodes, vertically separated and having mutually opposed...
7393798 Resistance variable memory with temperature tolerant materials  
A PCRAM memory device having a chalcogenide glass layer, preferably comprising antimony selenide having a stoichometric formula of about Sb2Se3, and a metal-chalcogenide layer and methods of...
RE40162 Thin film transistor array substrate for a liquid crystal display  
A thin film transistor substrate for a liquid crystal display includes an insulating substrate, and a gate line assembly formed on the substrate. The gate line assembly has a double-layered...
7339184 Systems and methods for harvesting and integrating nanowires  
The present invention is directed to methods to harvest, integrate and exploit nanomaterials, and particularly elongated nanowire materials. The invention provides methods for harvesting nanowires...
Matches 1 - 50 out of 152 1 2 3 4 >