Patents in Class 252/79

Matches 1 - 50 out of 2709

Match	Document	Document Title
1	8183195	Peroxide activated oxometalate based formulations for removal of etch residue Highly alkaline, aqueous formulations including (a) water, (b) at least one metal ion-free base at sufficient amounts to produce a final formulation alkaline pH, (c) from about 0.01% to about 5% by...
2	8173039	Method for preparing cerium oxide powder using organic solvent and CMP slurry comprising the same Disclosed is a method for directly preparing cerium oxide powder in a solution phase by a) mixing a cerium precursor solution with a precipitant solution to cause a reaction; and b) performing...
3	8168541	CMP polishing slurry and polishing method The present invention relates to a CMP polishing slurry, comprising cerium oxide particles, a dispersing agent, a water-soluble polymer and water, wherein the water-soluble polymer is a compound...
4	8163207	Microcapsules The invention described herein relates to a method of preparing microcapsules comprising a capsule core, a polymeric capsule wall and also, disposed on the outer surface of the capsule wall, a...
5	8163650	Adjuvant for controlling polishing selectivity and chemical mechanical polishing slurry comprising the same Disclosed is an adjuvant for use in simultaneous polishing of a cationically charged material and an anionically charged material, which forms an adsorption layer on the cationically charged...
6	8157877	Chemical mechanical polishing aqueous dispersion, chemical mechanical polishing method, and kit for preparing chemical mechanical polishing aqueous dispersion A chemical mechanical polishing aqueous dispersion includes (A) abrasive grains having a pore volume of 0.14 ml/g or more, and (B) a dispersion medium.
7	8153019	Methods for substantially equalizing rates at which material is removed over an area of a structure or film that includes recesses or crevices Methods for preventing isotropic removal of materials at corners formed by seams, keyholes, and other anomalies in films or other structures include use of etch blockers to cover or coat such...
8	8147713	Composition and method for scale removal and leak detection A method and composition for scale removal and leak detection is disclosed. The composition comprises a scale-removal agent and a fluorescing agent.
9	8147711	Adjuvant for controlling polishing selectivity and chemical mechanical polishing slurry Disclosed is an adjuvant for controlling polishing selectivity when polishing a cationically charged material simultaneously with an anionically charged material. CMP slurry comprising the adjuvant...
10	8147712	Polishing composition Disclosed is a polishing composition containing not less than 1 wt % of a water-soluble resin, which is obtained by polymerizing a vinyl monomer containing an amino group and/or an amide group,...
11	8142687	Method for producing heterogeneous composites A method for selecting materials and processing conditions to prepare a heterogeneous structure in situ via the reaction of a homogeneous mixture of a reactive organic compound and a filler, which...
12	8143172	Printable etching media for silicon dioxide and silicon nitride layers The present invention relates to a novel printable etching medium having non-Newtonian flow behavior for the etching of surfaces in the production of solar cells, and to the use thereof. The...
13	8142714	Cleaning and disinfection of surgical and medical instruments and appliances The invention relates to the use of a cleaning agent that contains surfactants and has a pH value of at least 11 when diluted in an aqueous solution and ready for use. Said cleaning agent is used...
14	8142675	Compositions for chemical-mechanical planarization of noble-metal-featured substrates, associated methods, and substrates produced by such methods A composition for chemical-mechanical planarization comprises periodic acid and an abrasive present in a combined amount sufficient to planarize a substrate surface having a feature thereon...
15	8138091	Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios The invention provides a chemical-mechanical polishing composition comprising a cationic abrasive, a cationic polymer, an inorganic halide salt, and an aqueous carrier. The invention further...
16	8137580	CMP slurry composition for forming metal wiring line Disclosed is CMP slurry, which includes a pyridine-based compound including at least two pyridinyl groups, and minimizes the occurrence of dishing and erosion of a wiring line.
17	8123970	Potassium monopersulfate solutions A composition comprising a solution of potassium monopersulfate having an active oxygen content of from about 3.4% to about 6.8% and a process for its preparation including neutralization with an...
18	8123976	Alkaline aqueous solution composition used for washing or etching substrates As a washing liquid and an etching solution for semiconductor substrates and glass substrates, alkaline aqueous solutions are used; however, since metal impurities are adsorbed on the substrate...
19	8124541	Etchant gas and a method for removing material from a late transition metal structure An etchant gas and a method for removing at least a portion of a late transition metal structure. The etchant gas includes PF3 and at least one oxidizing agent, such as at least one of oxygen,...
20	8119529	Method for chemical mechanical polishing a substrate A method for chemical mechanical polishing of a substrate, comprising: providing a substrate, wherein the substrate comprises silicon dioxide; providing a chemical mechanical polishing composition,...
21	8101093	Chemical-mechanical polishing composition and method for using the same The invention provides methods of polishing a noble metal-containing substrate with one of two chemical-mechanical polishing compositions. The first chemical-mechanical polishing composition...
22	8092707	Compositions and methods for modifying a surface suited for semiconductor fabrication The disclosure pertains to compositions and methods for modifying or refining the surface of a wafer suited for semiconductor fabrication. The compositions include working liquids useful in...
23	8084362	Polishing slurry and polishing method The present invention relates to polishing slurry and polishing method used for polishing in a process for forming wirings of a semiconductor device, and the like. There are provided polishing...
24	8084367	Etching, cleaning and drying methods using supercritical fluid and chamber systems using these methods Provided herein are etching, cleaning and drying methods using a supercritical fluid, and a chamber system for conducting the same. The etching method includes etching the material layer using a...
25	8083964	Metal-polishing liquid and polishing method A metal-polishing liquid used for chemical-mechanical polishing of a conductor film of copper or a copper alloy in a process for manufacturing a semiconductor device, the metal-polishing liquid...
26	8080505	Slurry composition and method for chemical mechanical polishing of copper integrated with tungsten based barrier metals The present invention is related to a slurry composition for polishing copper integrated with tungsten containing barrier layers and its use in a CMP method. The present invention is also related...
27	8075800	Polishing slurry and polishing method A polishing slurry containing a slurry dispersing particles of tetravalent metal hydroxide in a medium therein and an additive, characterized in that the additive is a polymer containing at least...
28	8066902	Methods for inhibiting corrosion in brazed metal surfaces and coolants and additives for use therein Disclosed are coolants comprising brazed metal corrosion inhibitors. In one embodiment, the disclosed brazed metal corrosion inhibitor will comprise a polycarboxylic acid functional compound having...
29	8062548	Polishing slurry An object of one embodiment of the present invention is to provide a polishing slurry which can reduce dishing and erosion of a to-be-polished semiconductor wafer. The polishing slurry contains an...
30	8062547	CMP slurry, preparation method thereof and method of polishing substrate using the same A CMP slurry is provided comprising polishing particles, the polishing particle comprising organically modified colloidal silica. Also, a method of preparing a CMP slurry is provided, comprising...
31	8057697	Lapping composition and method using same A lapping composition is presented, wherein that lapping composition is formed by mixing a solvent, a base, and a phenolic compound having structure I: wherein R1 is selected from the group...
32	8057696	Compositions and methods for rapidly removing overfilled substrates This invention relates to compositions and methods for removing overfilled substrates, preferably at a relatively high removal rates. Advantageously, a composition according to the invention can...
33	8052889	Etchant composition, and methods of patterning conductive layer and manufacturing flat panel display device using the same An etchant composition, and methods of patterning a conductive layer and manufacturing a flat panel display device using the same are provided. The etchant composition may include phosphoric acid,...
34	8053368	Method for removing residues from a patterned substrate The present invention relates to a method for removing residues from open areas of a patterned substrate involving the steps of providing a layer of a developable anti-reflective coating (DBARC)...
35	8048809	Polishing method using chemical mechanical slurry composition A slurry composition includes about 4.25 to about 18.5 weight percent of an abrasive, about 80 to about 95 weight percent of deionized water, and about 0.05 to about 1.5 weight percent of an...
36	8048808	Slurry compositions for polishing metal, methods of polishing a metal object and methods of forming a metal wiring using the same A slurry composition for polishing metal includes a polymeric polishing accelerating agent, the polymeric polishing accelerating agent including a backbone of hydrocarbon and a side substituent...
37	8043525	Wet etching solution A wet etching solution includes hydrogen fluoride in an amount of about 0.1% to about 3% by weight of the etching solution, an inorganic acid in an amount of about 10% to about 40% by weight of the...
38	8038901	Polishing fluids and methods for CMP Provided are several polishing compositions useful for modifying a surface, such as a semiconductor wafer suitable for fabrication of a semiconductor device, especially when used in fixed abrasive...
39	8034252	Metal-polishing liquid and chemical-mechanical polishing method using the same A metal-polishing liquid includes colloidal silica and a compound represented by Formula (I) or a compound represented by Formula (II). The colloidal silica is substituted by aluminum atoms at...
40	8029683	Etching of solar cell materials A solar cell is fabricated by etching one or more of its layers without substantially etching another layer of the solar cell. In one embodiment, a copper layer in the solar cell is etched without...
41	8025811	Composition for etching a metal hard mask material in semiconductor processing An etching solution for a metal hard mask. The etching solution comprises a mixture of a dilute HF (hydrofluoric acid) and a silicon containing precursor. The etching solution also comprises a...
42	8025812	Selective etch of TiW for capture pad formation A chemical etchant containing hydrogen peroxide and phosphate ions at a controlled pH is provided for selectively etching metals in the presence of one or more metals not to be etched. The etchant...
43	8025813	Chemical mechanical polishing composition and methods relating thereto A chemical mechanical polishing composition useful for chemical mechanical polishing of a substrate, wherein the substrate comprises a silicon oxide material and a silicon nitride material; and...
44	8022025	Heterocoagulate, and compositions and method for polishing and surface treatment A heterocoagulate comprises first particles, having a particle size of at most 999 nm, on a second particle, having a particle size of at least 3 microns. The first particles comprise cerium oxide,...
45	8003707	Metal-rich siliceous compositions and methods of producing same A modified sol-gel method to create metal-rich siliceous material, such as colloidal silica or aluminosilicate particles is disclosed. Initially, the metal salt of choice is added to a silicic acid...
46	7994058	*WITHDRAWN PATENT AS PER THE LATEST USPTO WITHDRAWN LIST* Polishing slurry and polishing method The present invention relates to polishing slurry and polishing method used for polishing in a process for forming wirings of a semiconductor device, and the like. There are provided polishing...
47	7987866	Zwitterionic surfacant together with an anionic ether-containing surfactant as a drag-reducing agent The present invention relates to the use of a zwitterionic surfactant in combination with an ether sulphate or ether carboxylate surfactant in a water-based system as a drag-reducing agent. The...
48	7988878	Selective barrier slurry for chemical mechanical polishing The polishing solution is useful for removing a barrier from a semiconductor substrate. The solution contains by weight percent 0.001 to 25 oxidizer, 0.0001 to 5 anionic surfactant, 0 to 15...
49	7991499	Advanced finishing control A factory, an apparatus, and methods of using an in situ finishing information for finishing workpieces and semiconductor wafers are described. Changes or improvements to cost of manufacture of a...
50	7985723	Fluorinated sulfonamide surfactants for aqueous cleaning solutions Described are anionic N-substituted fluorinated sulfonamide surfactants, and use thereof in cleaning and in acid etch solutions. The cleaning and etch solutions are used with a wide variety of...

Matches 1 - 50 out of 2709

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