|
Match
|
Document |
Document Title |
|
|
7390429 |
Method and composition for electrochemical mechanical polishing processing
A method of processing a substrate having a conductive material layer disposed thereon is provided which includes positioning the substrate in a process apparatus and supplying a first polishing...
|
|
|
7384534 |
Electrolyte with good planarization capability, high removal rate and smooth surface finish for electrochemically controlled copper CMP
Electrolyte compositions and methods for planarizing a surface of a substrate using the electrolyte compositions are provided. In one aspect, an electrolyte composition includes one or more...
|
|
|
7368064 |
Cleaning solution and manufacturing method for semiconductor device
A method of manufacturing a semiconductor device forms an interlayer insulating film on a nickel silicide layer formed on a substrate, and forms a through hole by performing dry etching using a...
|
|
|
7347951 |
Method of manufacturing electronic device
A method of manufacturing an electronic device comprises forming a wiring material layer made of aluminum or an aluminum alloy on the surface of an insulating film on a substrate, patterning the...
|
|
|
7332436 |
Process of removing residue from a precision surface using liquid or supercritical carbon dioxide composition
A composition which includes liquid or supercritical carbon dioxide and an acid having a pKa of less than about 4. The composition is employed in a process of removing residue from a precision...
|
|
|
7316603 |
Compositions and methods for tantalum CMP
A composition suitable for tantalum chemical-mechanical polishing (CMP) comprises an abrasive, an organic oxidizer, and a liquid carrier therefor. The organic oxidizer has a standard redox...
|
|
|
7314578 |
Slurry compositions and CMP methods using the same
The exemplary embodiments of the present invention providing new slurry compositions suitable for use in processes involving the chemical mechanical polishing (CMP) of a polysilicon layer. The...
|
|
|
7311857 |
Etching composition, method of preparing the same, method of etching an oxide film, and method of manufacturing a semiconductor device
An exemplary etching composition includes about 0.1 to 8% by weight of hydrogen fluoride, about 10 to 25% by weight of ammonium fluoride, about 0.0001 to 3% by weight of a non-ionic polymer...
|
|
|
7311856 |
Polymeric inhibitors for enhanced planarization
The invention provides a chemical-mechanical polishing system comprising a polishing component, a surfactant, and a liquid carrier. The invention further provides a method of...
|
|
|
7311855 |
Polishing slurry for chemical mechanical polishing and method for polishing substrate
The present invention is directed to a CMP polishing slurry comprising cerium oxide particles, an organic compound having an acetylene bond (triple bond between carbon and carbon) and water, and a...
|
|
|
7306747 |
Use of fluorinated additives in the etching or polishing of integrated circuits
Use in etching or polishing of integrated circuits of fluorinated additives of formula (I):
T′ (C 3 F 6 O) n ( CFXO ) m T ...
|
|
|
7300602 |
Selective barrier metal polishing solution
The polishing solution is useful for removing barrier materials in the presence of interconnect metals and dielectrics. The polishing solution comprises, by weight percent, 0.1 to 10 hydrogen...
|
|
|
7297633 |
Compositions for chemical mechanical polishing silica and silicon nitride having improved endpoint detection
The present invention provides a method of manufacturing a composition for polishing silica and silicon nitride on a semiconductor substrate. The method comprises ion-exchanging carboxylic acid...
|
|
|
7288212 |
Additive composition, slurry composition including the same, and method of polishing an object using the slurry composition
An additive composition for a slurry contains a first salt of polymeric acid including a first polymeric acid having a first weight average molecular weight and a first base material, and a second...
|
|
|
7279119 |
Silica and silica-based slurry
This invention relates to a silica, a slurry composition, and a method of their preparation. In particular, the silica of the present invention includes aggregated primary particles. The slurry...
|
|
|
7273566 |
Gas compositions
Processes, etchants, and apparatus useful for etching an insulating oxide layer of a substrate without damaging underlying nitride features or field oxide regions. The processes exhibit good...
|
|
|
7262409 |
Chemical etch solution and technique for imaging a device's shallow junction profile
The present invention provides, in one aspect, a method of imaging a microelectronics device 100 . The method comprises cleaning, when contaminants are preset, a sample of a microelectronics...
|
|
|
7255810 |
Polishing system comprising a highly branched polymer
The invention provides a polishing system and method of its use comprising (a) a liquid carrier, (b) a polymer having a degree of branching of about 50% or greater, and (c) a polishing pad, an...
|
|
|
7255809 |
Polishing slurry for texturing
Polishing slurry for texturing the surface of a magnetic hard disk substrate has abrading particles with diameters in the range of 1-10 nm dispersed in a dispersant such as water and a water-based...
|
|
|
7253111 |
Barrier polishing solution
The polishing solution is useful for preferentially removing barrier materials in the presence of nonferrous interconnect metals with limited erosion of dielectrics. The polishing solution...
|
|
|
7241920 |
Filterable surfactant composition
An improved aqueous soluble surfactant which has particular utility for incorporating in etchants for semiconductor devices is provided. The surfactant comprises a combination of a linear...
|
|
|
7235188 |
Aqueous phosphoric acid compositions for cleaning semiconductor devices
The present invention relates to dilute aqueous solutions containing phosphoric acid and methods for cleaning plasma etch residue from semiconductor substrates including such dilute aqueous...
|
|
|
7232529 |
Polishing compound for chemimechanical polishing and polishing method
This invention provides a polishing medium for CMP, comprising an oxidizing agent, a metal-oxide-dissolving agent, a protective-film-forming agent, a water-soluble polymer, and water, and a...
|
|
|
7232528 |
Surface treatment agent for copper and copper alloy
The surface treatment agent for copper and copper alloys contains hydrogen peroxide, a mineral acid, an azole compound, silver ion and a halide ion. The surface treatment agent for copper and...
|
|
|
7229929 |
Multi-layer gate stack
A method of making a semiconductor structure, comprises etching a nitride layer with a plasma to form a patterned nitride layer. The nitride layer is on a semiconductor substrate, a photoresist...
|
|
|
7229570 |
Slurry for chemical mechanical polishing
The present invention relates to a slurry for chemical mechanical polishing, which contains a silica polishing material, an oxidizing agent, a benzotriazole-based compound, a diketone and water.
|
|
|
7229569 |
Etching reagent, and method for manufacturing electronic device substrate and electronic device
The present invention provides an etching agent that is able to etch a Cu film by a simple chemical etching method such as an immersion method when the low resistance Cu film is used for a wiring...
|
|
|
7223352 |
Supercritical carbon dioxide/chemical formulation for ashed and unashed aluminum post-etch residue removal
A post-etch residue cleaning composition for cleaning ashed or unashed aluminum/SiN/Si post-etch residue from small dimensions on semiconductor substrates. The cleaning composition contains...
|
|
|
7220676 |
Roll-off reducing agent
A roll-off reducing agent comprising one or more compounds selected from the group consisting of carboxylic acids having 2 to 20 carbon atoms having either OH group or groups or SH group or groups,...
|
|
|
7211200 |
Manufacture and cleaning of a semiconductor
Metal nitride and metal oxynitride extrusions often form on metal silicides. These extrusions can cause short circuits and degrade processing yields. The present invention discloses a method of...
|
|
|
7198729 |
CMP slurry and method of manufacturing semiconductor device
CMP slurry contains a polishing component to polish a region to be polished, which includes at least one of a sub-region made of insulative material and a sub-region made of conductive material,...
|
|
|
7182882 |
Method of improving chemical mechanical polish endpoint signals by use of chemical additives
A method for buffering a chemical mechanical polish chemical slurry is disclosed. Buffering the slurry reduces buildup of local acidic areas at the interface between the polished metal and the...
|
|
|
7179398 |
Etchant for wires, a method for manufacturing the wires using the etchant, a thin film transistor array substrate and a method for manufacturing the same including the method
First, a lower film of AlNd Alloy and an upper film of MoW alloy are deposited in succession, and then patterned by an etchant including HNO 3 of 0.1–10%, H 3 PO 4 of 65–55%, CH 3 COOH of...
|
|
|
7169323 |
Fluorinated surfactants for buffered acid etch solutions
The present invention is directed to certain fluorinated surfactants, and use thereof in acid etch solutions, such as in aqueous buffered acid etch solutions. The etch solutions are used with a...
|
|
|
7160482 |
Composition comprising an oxidizing and complexing compound
The present invention is related to a composition comprising an oxidizing compound and a complexing compound with the chemical formula wherein R1, R2, R3 and R4 are selected from the group...
|
|
|
7153335 |
Tunable composition and method for chemical-mechanical planarization with aspartic acid/tolyltriazole
A composition and associated method for chemical mechanical planarization (or other polishing) are described which afford high tantalum to copper selectivity in copper CMP and which are tunable (in...
|
|
|
7148147 |
CMP composition containing organic nitro compounds
A composition and process for the precision polishing of substrates such as semi-conductor chips is disclosed. The composition and process make use of soluble or insoluble organic nitro compounds...
|
|
|
7144817 |
Etching solutions and processes for manufacturing flexible wiring boards
The disclosure relates to methods and solutions for precisely and rapidly etching a polyimide resin layer. Etching solutions of the present invention include 3–65% by weight of a diol containing...
|
|
|
7144815 |
Chemical mechanical polishing slurry
A polishing slurry including an abrasive, deionized water, a pH controlling agent, and polyethylene imine, can control the removal rates of a silicon oxide layer and a silicon nitride layer which...
|
|
|
7141180 |
Etchant for wire, method of manufacturing wire using etchant, thin film transistor array panel including wire and manufacturing method thereof
A method of manufacturing a TFT array panel according to the present invention forms a gate wire on an insulating substrate. The gate wire includes a plurality of gate lines and a plurality of gate...
|
|
|
7138342 |
Process of maintaining hybrid etch
Process for combined chemical cleaning and etching of parts made of aluminum and/or aluminum alloys including: (a) providing a cleaning and etching solution including 5–30 grams/liter of...
|
|
|
7138072 |
Methods and apparatuses for planarizing microelectronic substrate assemblies
Methods and apparatuses for planarizing microelectronic substrate assemblies on fixed-abrasive polishing pads with non-abrasive lubricating planarizing solutions. One aspect of the invention is to...
|
|
|
7132058 |
Tungsten polishing solution
A tungsten CMP solution for planarizing semiconductor wafers includes a primary oxidizer having a sufficient oxidation potential for oxidizing tungsten metal to tungsten oxide; and the tungsten CMP...
|
|
|
7118686 |
Slurry for use in polishing semiconductor device conductive structures that include copper and tungsten and polishing methods
A method for substantially simultaneously polishing a copper conductive structure of a semiconductor device structure and an adjacent barrier layer. The method includes use of a polishing pad with...
|
|
|
7118685 |
Polishing liquid composition
A polishing liquid composition is applicable as a means of forming embedded metal interconnections on a semiconductor substrate. In a surface to be polished comprising an insulating layer and a...
|
|
|
7108795 |
Composition and method for preparing chemically-resistant roughened copper surfaces for bonding to substrates
The invention is directed to a method and composition for providing chemically-resistant roughened copper surfaces suitable for subsequent multilayer lamination. In one embodiment, a smooth copper...
|
|
|
7101808 |
Chromate-free method for surface etching of stainless steel
Non-chromate solutions for treating and/or etching metals, particularly, aluminum, aluminum alloys, steel and titanium, and method of applying same wherein the solutions include either a titanate...
|
|
|
7101443 |
Supercritical carbon dioxide-based cleaning of metal lines
Supercritical carbon dioxide may be utilized to clean metal lines (e.g. copper, cobalt). The supercritical carbon dioxide cleans may include hydrogen gas in one embodiment, hydrofluoric acid in...
|
|
|
7094700 |
Plasma etching methods and methods of forming memory devices comprising a chalcogenide comprising layer received operably proximate conductive electrodes
In one implementation, a plasma etching method comprises forming a Ge x Se y chalcogenide comprising layer over a substrate. A mask comprising an organic masking material is formed over the Ge x...
|
|
|
7090786 |
Aqueous dispersion for chemical/mechanical polishing
The aqueous dispersion comprising (A) abrasive grains, (B) at least one compound selected from the group consisting of 2-bromo-2-nitro-1,3-propanediol, 2-bromo-2-nitro-1, 3-butanediol,...
|