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8163650 |
Adjuvant for controlling polishing selectivity and chemical mechanical polishing slurry comprising the same
Disclosed is an adjuvant for use in simultaneous polishing of a cationically charged material and an anionically charged material, which forms an adsorption layer on the cationically charged...
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8143172 |
Printable etching media for silicon dioxide and silicon nitride layers
The present invention relates to a novel printable etching medium having non-Newtonian flow behavior for the etching of surfaces in the production of solar cells, and to the use thereof. The...
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8123970 |
Potassium monopersulfate solutions
A composition comprising a solution of potassium monopersulfate having an active oxygen content of from about 3.4% to about 6.8% and a process for its preparation including neutralization with an...
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8092707 |
Compositions and methods for modifying a surface suited for semiconductor fabrication
The disclosure pertains to compositions and methods for modifying or refining the surface of a wafer suited for semiconductor fabrication. The compositions include working liquids useful in...
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8084367 |
Etching, cleaning and drying methods using supercritical fluid and chamber systems using these methods
Provided herein are etching, cleaning and drying methods using a supercritical fluid, and a chamber system for conducting the same. The etching method includes etching the material layer using a...
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8083964 |
Metal-polishing liquid and polishing method
A metal-polishing liquid used for chemical-mechanical polishing of a conductor film of copper or a copper alloy in a process for manufacturing a semiconductor device, the metal-polishing liquid...
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8075800 |
Polishing slurry and polishing method
A polishing slurry containing a slurry dispersing particles of tetravalent metal hydroxide in a medium therein and an additive, characterized in that the additive is a polymer containing at least...
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8062548 |
Polishing slurry
An object of one embodiment of the present invention is to provide a polishing slurry which can reduce dishing and erosion of a to-be-polished semiconductor wafer. The polishing slurry contains an...
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8062547 |
CMP slurry, preparation method thereof and method of polishing substrate using the same
A CMP slurry is provided comprising polishing particles, the polishing particle comprising organically modified colloidal silica. Also, a method of preparing a CMP slurry is provided, comprising...
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8052889 |
Etchant composition, and methods of patterning conductive layer and manufacturing flat panel display device using the same
An etchant composition, and methods of patterning a conductive layer and manufacturing a flat panel display device using the same are provided. The etchant composition may include phosphoric acid,...
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8053368 |
Method for removing residues from a patterned substrate
The present invention relates to a method for removing residues from open areas of a patterned substrate involving the steps of providing a layer of a developable anti-reflective coating (DBARC)...
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8048809 |
Polishing method using chemical mechanical slurry composition
A slurry composition includes about 4.25 to about 18.5 weight percent of an abrasive, about 80 to about 95 weight percent of deionized water, and about 0.05 to about 1.5 weight percent of an...
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8048808 |
Slurry compositions for polishing metal, methods of polishing a metal object and methods of forming a metal wiring using the same
A slurry composition for polishing metal includes a polymeric polishing accelerating agent, the polymeric polishing accelerating agent including a backbone of hydrocarbon and a side substituent...
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8043525 |
Wet etching solution
A wet etching solution includes hydrogen fluoride in an amount of about 0.1% to about 3% by weight of the etching solution, an inorganic acid in an amount of about 10% to about 40% by weight of the...
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8038901 |
Polishing fluids and methods for CMP
Provided are several polishing compositions useful for modifying a surface, such as a semiconductor wafer suitable for fabrication of a semiconductor device, especially when used in fixed abrasive...
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7981317 |
Composition for surface modification of a heat sink and method for surface treatment of the heat sink for printed circuit boards using the same
The present invention provides a composition for surface modification of a heat sink, the composition including: 0.01 to 10 parts by weight of an organic titanium compound; 0.01 to 5 parts by...
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7981316 |
Selective barrier metal polishing method
The polishing method uses a polishing solution for removing barrier materials in the presence of interconnect metals and dielectrics. The polishing solution comprises, by weight percent, 0.1 to 10...
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7968000 |
Etchant composition, and method of fabricating metal pattern and thin film transistor array panel using the same
An etchant composition is provided. The etchant composition includes about 40 to about 65 wt % of phosphoric acid, about 2 to about 5 wt % of nitric acid, about 2 to about 20 wt % of acetic acid,...
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7955519 |
Composition and method for planarizing surfaces
The invention provides compositions and methods for planarizing or polishing a surface. One composition comprises about 0.01 wt. % to about 20 wt. % α-alumina particles, wherein the α-alumina p...
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7955522 |
Synergistic acid blend extraction aid and method for its use
An extraction aid has been found which provides for enhanced contaminate removal, such as metals and amines, from crude oils that uses components that are desirable in desalting processes as the...
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7942945 |
CMP slurry for polymeric interlayer dielectric planarization
The proposed slurry can be used to planarize polymeric candidate ILD materials such Benzocylobutene (BCB), SILK, Polyimide, etc. The slurry consists of colloidal suspension of nanoparticle...
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7938982 |
Silicon wafer etching compositions
A process for etching silicon wafers using a caustic etchant in the form of an aqueous solution comprising water, a hydroxide ion source, and a chelating agent. The process produces silicon wafers...
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7922926 |
Composition and method for polishing nickel-phosphorous-coated aluminum hard disks
The invention provides a chemical-mechanical polishing composition consisting essentially of flumed alumina, alpha alumina, silica, a nonionic surfactant, an additive compound selected from the...
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7887714 |
Cerium oxide sol and abrasive
There is provided an abrasive used for polishing a substrate which comprises silica as a main component, for example a rock crystal, a quartz glass for photomask, for CMP of an organic film, Inter...
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7875558 |
Microetching composition and method of using the same
The present invention is directed to a microetching composition comprising a source of cupric ions, acid, a nitrile compound, and a source of halide ions. Other additive, including organic...
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7858527 |
Additive composition, slurry composition including the same, and method of polishing an object using the slurry composition
An additive composition for a slurry contains a first salt of polymeric acid including a first polymeric acid having a first weight average molecular weight and a first base material, and a second...
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7842193 |
Polishing liquid
According to an aspect of the invention, there is provided a polishing liquid for polishing a barrier metal material on an interlayer insulation material, the polishing liquid having a pH of from...
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7824568 |
Solution for forming polishing slurry, polishing slurry and related methods
A solution for forming a polishing slurry, the polishing slurry and related methods are disclosed. The solution for forming a polishing slurry may include 1H-benzotriazole (BTA) dissolved in an...
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7816313 |
Photoresist residue remover composition and semiconductor circuit element production process employing the same
A photoresist residue remover composition is provided that removes a photoresist residue formed by a resist ashing treatment after dry etching in a step of forming, on a substrate surface, wiring...
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7790618 |
Selective slurry for chemical mechanical polishing
An aqueous solution is useful for selective removal in the presence of a low-k dielectric. The aqueous solution comprises by weight percent 0 to 25 oxidizer; 0.00002 to 5 multi-component...
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7785487 |
Polymeric barrier removal polishing slurry
The aqueous slurry is useful for chemical mechanical polishing semiconductor substrates having copper interconnects. The aqueous slurry includes by weight percent, 0.01 to 25 oxidizing agent, 0.1...
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7776230 |
CMP system utilizing halogen adduct
The invention provides a chemical-mechanical polishing system for polishing a substrate comprising (a) a polishing component selected from an abrasive, a polishing pad, or both an abrasive and a...
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7754611 |
Chemical mechanical polishing process
A chemical mechanical polishing method is disclosed. The method includes forming a film on a wafer having at least one trench structure thereon; polishing the surface of the film by providing a...
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7731864 |
Slurry for chemical mechanical polishing of aluminum
Described herein are embodiments of a slurry used for the chemical mechanical polishing a substrate that includes aluminum or an aluminum alloy features having a width of less than 1 um. The slurry...
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7727415 |
Fine treatment agent and fine treatment method using same
A fine treatment agent according to the present invention is a fine treatment agent for the fine treatment of a multilayer film, including a tungsten film and a silicon oxide film comprising at...
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7708904 |
Conductive hydrocarbon fluid
The disclosure is directed to a processing fluid including an aliphatic hydrocarbon component having an average chain length of 8 to 16 carbons and about 0.0001 wt % to about 50.0 wt % of a Lewis...
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7601273 |
Polishing slurry composition and method of using the same
A polishing slurry composition including an abrasive, a pH-adjusting agent, a water-soluble thickening agent, and a chelating agent, wherein the chelating agent includes at least one of an acetate...
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7572758 |
Cleaning liquid and cleaning method
A cleaning liquid is provided, which comprises an aqueous solution containing nitric acid, sulfuric acid, a fluorine compound, and a basic compound. The concentration of water in the cleaning...
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7563315 |
Composition and method for preparing chemically-resistant roughened copper surfaces for bonding to substrates
The invention is directed to a method and composition for providing chemically-resistant roughened copper surfaces suitable for subsequent multilayer lamination. In one embodiment, a smooth copper...
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7563383 |
CMP composition with a polymer additive for polishing noble metals
The invention provides a method of polishing a substrate comprising contacting a substrate comprising a noble metal on a surface of the substrate with a chemical-mechanical polishing system...
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7553430 |
Polishing slurries and methods for chemical mechanical polishing
Aqueous polishing slurries for chemical-mechanical polishing are effective for polishing copper at high polish rates. The aqueous slurries according to the present invention may include soluble...
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7544307 |
Metal polishing liquid and polishing method using it
A metal polishing liquid which contains a compound represented by the following formula (1), an aromatic heterocyclic ring compound, and an oxidizing agent, and a chemical mechanical polishing...
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7514363 |
Chemical-mechanical planarization composition having benzenesulfonic acid and per-compound oxidizing agents, and associated method for use
A composition and associated method for chemical mechanical planarization (or other polishing) are described. The composition contains an abrasive, benzenesulfonic acid compound, a per-compound...
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7507350 |
Etching liquid composition
The invention provides etching liquid compositions for transparent conducting films wherein foaming is suppressed and residues do not occur after etching. The etching liquid compositions include an...
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7497966 |
Chemical mechanical polishing slurry composition for shallow trench isolation process of semiconductor
The present invention is related to a chemical-mechanical polishing slurry for shallow trench isolation, more concretely, to a chemical-mechanical polishing slurry comprising an aqueous abrasive...
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7481949 |
Polishing composition and rinsing composition
A polishing composition and a rinsing composition according to the present invention can effectively suppress wafer contamination caused by metal impurities. The polishing composition includes a...
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7473380 |
Etching liquid
An etching liquid contains iodine, an iodine compound and alcohol as solute, and solvent such as water. The etching liquid etches a gold or gold alloy layer formed on the surface of a substrate for...
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7456107 |
Compositions and methods for CMP of low-k-dielectric materials
The present invention provides a chemical-mechanical polishing (CMP) composition suitable for polishing low-k dielectric materials. The composition comprises a particulate abrasive material, at...
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7456114 |
Microetching composition and method of using the same
The present invention is directed to a microetching composition comprising a source of cupric ions, acid, a nitrile compound, and a source of halide ions. Other additive, including organic...
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7452481 |
Polishing slurry and method of reclaiming wafers
The polishing slurry contains monoclinic zirconium oxide particles having a crystallite size of 10 to 1,000 nm and an average particle diameter of 30 to 2,000 nm in an amount of 1 to 20 weight %, a...
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