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7390429 |
Method and composition for electrochemical mechanical polishing processing
A method of processing a substrate having a conductive material layer disposed thereon is provided which includes positioning the substrate in a process apparatus and supplying a first polishing...
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7390423 |
Self-cleaning colloidal slurry composition and process for finishing a surface of a substrate
A self-cleaning colloidal slurry and process for finishing a surface of a glass, ceramic, glass-ceramic, metal or alloy substrate for use in a data storage device, for example. The slurry comprises...
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7378353 |
High selectivity BPSG to TEOS etchant
An organic acid/fluoride-containing solution etchant having high selectivity for BPSG to TEOS. In an exemplary situation, a TEOS layer may be used to prevent contamination of other components in a...
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7378348 |
Polishing compound for insulating film for semiconductor integrated circuit and method for producing semiconductor integrated circuit
An insulating film comprising an organic silicon material having a C—Si bond and a Si—O bond is used for a semiconductor integrated circuit, and for polishing of its surface, a polishing...
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7368388 |
Cerium oxide abrasives for chemical mechanical polishing
The use of mixed cerium-containing synthetic solid abrasive materials in chemical mechanical polishing slurries can provide better selectivity, better substrate removal rates, or lower defect rates...
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7368387 |
Polishing composition and polishing method
A polishing composition includes fumed alumina, alumina other than fumed alumina, colloidal silica, a first organic acid, a second organic acid, an oxidizing agent, and water. When the second...
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7368064 |
Cleaning solution and manufacturing method for semiconductor device
A method of manufacturing a semiconductor device forms an interlayer insulating film on a nickel silicide layer formed on a substrate, and forms a through hole by performing dry etching using a...
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7364667 |
Slurry for CMP and CMP method
A CMP slurry comprising polishing abrasives containing mixture abrasives of silica and alumina is used. In CMP using the slurry comprising mixture abrasives of silica and alumina as polishing...
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7357879 |
Etching solution, method of etching and printed wiring board
There is provided an etching solution comprised of a cupric chloride solution and a high-concentration triazole type compound added to the cupric chloride solution and capable of forming an...
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7354861 |
Polishing method and polishing liquid
Disclosed is a method for polishing a surface of a substrate containing Ru or a Ru compound in a surface region, said method comprising a polishing step with a polishing liquid containing...
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7354530 |
Chemical mechanical polishing systems and methods for their use
Alpha-amino acid containing chemical mechanical polishing compositions and slurries that are useful for polishing substrates including multiple layers of metals, or metals and dielectrics.
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7351354 |
Tungsten metal removing solution and method for removing tungsten metal by use thereof
A removing solution for removing tungsten metal which causes a film formation on a semiconductor substrate or adheres to it, wherein orthoperiodic acid and water are contained.
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7351353 |
Method for roughening copper surfaces for bonding to substrates
The invention is directed to a method and composition for providing roughened copper surfaces suitable for subsequent multilayer lamination. A smooth copper surface is contacted with an adhesion...
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7344988 |
Alumina abrasive for chemical mechanical polishing
Methods of manufacturing alumina abrasive for use in chemical mechanical polishing are described, wherein the abrasive is in a slurry having gamma alumina formed in a low temperature fuming...
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7332436 |
Process of removing residue from a precision surface using liquid or supercritical carbon dioxide composition
A composition which includes liquid or supercritical carbon dioxide and an acid having a pKa of less than about 4. The composition is employed in a process of removing residue from a precision...
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7329365 |
Etchant composition for indium oxide layer and etching method using the same
An etchant for removing an indium oxide layer includes sulfuric acid as a main oxidizer, an auxiliary oxidizer such as H 3 PO 4 , HNO 3 , CH 3 COOH, HClO 4 , H 2 O 2 , and a Compound A that is...
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7319174 |
Dry-etching gas for semiconductor process and preparation method thereof
The invention is a method for continuously preparing highly pure octafluorocyclopentene for use in dry-etching processes. The method includes reacting octachlorocyclopentene with KF in a continuous...
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7316977 |
Chemical-mechanical planarization composition having ketooxime compounds and associated method for use
A composition and associated method for chemical mechanical planarization (or other polishing) are described. The composition contains a ketoxime compound and water. The composition may also...
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7314578 |
Slurry compositions and CMP methods using the same
The exemplary embodiments of the present invention providing new slurry compositions suitable for use in processes involving the chemical mechanical polishing (CMP) of a polysilicon layer. The...
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7311857 |
Etching composition, method of preparing the same, method of etching an oxide film, and method of manufacturing a semiconductor device
An exemplary etching composition includes about 0.1 to 8% by weight of hydrogen fluoride, about 10 to 25% by weight of ammonium fluoride, about 0.0001 to 3% by weight of a non-ionic polymer...
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7311856 |
Polymeric inhibitors for enhanced planarization
The invention provides a chemical-mechanical polishing system comprising a polishing component, a surfactant, and a liquid carrier. The invention further provides a method of...
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7311855 |
Polishing slurry for chemical mechanical polishing and method for polishing substrate
The present invention is directed to a CMP polishing slurry comprising cerium oxide particles, an organic compound having an acetylene bond (triple bond between carbon and carbon) and water, and a...
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7309449 |
Substrate processing method
A substrate processing enables etching of a barrier metal film at around room temperature without application of a mechanical load and without excessive etching of a necessary portion of copper....
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7307778 |
Compositions and processes for format-flexible, roll-to-roll manufacturing of electrophoretic displays
The invention is directed to compositions and processes useful for the roll-to-roll manufacturing of electrophoretic displays.
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7306747 |
Use of fluorinated additives in the etching or polishing of integrated circuits
Use in etching or polishing of integrated circuits of fluorinated additives of formula (I):
T′ (C 3 F 6 O) n ( CFXO ) m T ...
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7300881 |
Plasma etching method
A plasma etching is performed on a substrate having a pattern wherein an interval between neighboring openings formed on a resist mask is equal to or less than 200 nm, wherein the etching is...
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7300603 |
Chemical mechanical planarization compositions for reducing erosion in semiconductor wafers
An aqueous chemical mechanical planarizing composition includes an oxidizer for promoting barrier removal and an abrasive. Inhibitor decreases removals of a metal interconnect. The composition has...
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7300602 |
Selective barrier metal polishing solution
The polishing solution is useful for removing barrier materials in the presence of interconnect metals and dielectrics. The polishing solution comprises, by weight percent, 0.1 to 10 hydrogen...
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7300480 |
High-rate barrier polishing composition
The solution is useful for removing a barrier material from a semiconductor substrate. The solution comprises, by weight percent, 0.01 to 25 oxidizer, 0 to 15 inhibitor for a nonferrous metal, 0 to...
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7288212 |
Additive composition, slurry composition including the same, and method of polishing an object using the slurry composition
An additive composition for a slurry contains a first salt of polymeric acid including a first polymeric acid having a first weight average molecular weight and a first base material, and a second...
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7288206 |
High-purity alkali etching solution for silicon wafers and use thereof
A high-purity alkali etching solution for silicon wafers results in silicon wafers with extremely low metal impurity contamination, and excellent surface flatness. The alkali etching solution...
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7287314 |
One step copper damascene CMP process and slurry
A Chemical Mechanical Polish (CMP) process and slurry therefore slurry that is capable of removing NiFe, SiO2, Photoresist, Ta, alumina and Cu at substantially the same rate. The slurry is useful...
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7285229 |
Etchant and replenishment solution therefor, and etching method and method for producing wiring board using the same
An etchant of the present invention includes an aqueous solution containing hydrochloric acid, nitric acid, and a cupric ion source. An etching method of the present invention includes bringing the...
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7279119 |
Silica and silica-based slurry
This invention relates to a silica, a slurry composition, and a method of their preparation. In particular, the silica of the present invention includes aggregated primary particles. The slurry...
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7276181 |
Method for preparing decorative glass using glass etching composition
A method for preparing a decorative glass using a glass etching composition, wherein a frosting of elaborate patterns and designs is applied on the surface of the glass having an arbitrary shape,...
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7273566 |
Gas compositions
Processes, etchants, and apparatus useful for etching an insulating oxide layer of a substrate without damaging underlying nitride features or field oxide regions. The processes exhibit good...
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7267784 |
Chemical-mechanical polishing (CMP) slurry and method of planarizing computer memory disk surfaces
Compositions and methods for planarizing or polishing a surface, particularly a semiconductor wafer surface. The polishing compositions described herein comprise (a) a liquid carrier; (b) purified...
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7265055 |
CMP of copper/ruthenium substrates
The invention provides a method of chemically-mechanically polishing a substrate. A substrate comprising ruthenium and copper is contacted with a chemical-mechanical polishing system comprising a...
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7264742 |
Method of planarizing a surface
A method for removing at least a portion of a structure, such as a layer, film, or deposit, including ruthenium metal and/or ruthenium dioxide includes contacting the structure with a material...
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7262409 |
Chemical etch solution and technique for imaging a device's shallow junction profile
The present invention provides, in one aspect, a method of imaging a microelectronics device 100 . The method comprises cleaning, when contaminants are preset, a sample of a microelectronics...
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7261835 |
Acid blend for removing etch residue
A method for removing organometallic and organosilicate residues remaining after a dry etch process from semiconductor substrates. The substrate is exposed to a conditioning solution of phosphoric...
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7261828 |
Bumping process
A method of forming a plurality of bumps over a wafer mainly comprises providing the wafer having a plurality of bonding pads formed thereon, forming an under bump metallurgy (UBM) layer over the...
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7255810 |
Polishing system comprising a highly branched polymer
The invention provides a polishing system and method of its use comprising (a) a liquid carrier, (b) a polymer having a degree of branching of about 50% or greater, and (c) a polishing pad, an...
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7255809 |
Polishing slurry for texturing
Polishing slurry for texturing the surface of a magnetic hard disk substrate has abrading particles with diameters in the range of 1-10 nm dispersed in a dispersant such as water and a water-based...
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7253111 |
Barrier polishing solution
The polishing solution is useful for preferentially removing barrier materials in the presence of nonferrous interconnect metals with limited erosion of dielectrics. The polishing solution...
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7247566 |
CMP method for copper, tungsten, titanium, polysilicon, and other substrates using organosulfonic acids as oxidizers
The invention relates to chemical mechanical polishing of substrates using an abrasive and a fluid composition, wherein certain organosulfonic acid compounds are used as oxidizers, and particularly...
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7247256 |
CMP slurry for forming aluminum film, CMP method using the slurry, and method for forming aluminum wiring using the CMP method
A first chemical mechanical polishing (CMP) slurry includes a polishing agent, an oxidant, a pH control additive, and an oxide film removal retarder which reduces a removal rate of the silicon...
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7247082 |
Polishing composition
A polishing composition comprising an improver of a ratio of a polishing rate of an insulating film to that of a stopper film, wherein the polishing rate of the stopper film is selectively...
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7238291 |
Method for removing oxides from a Ge semiconductor substrate surface
This invention relates to a method for removing oxides from the surface of a Ge semiconductor substrate comprising the step of subjecting the surface to a Ge oxide etching solution characterized in...
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7235188 |
Aqueous phosphoric acid compositions for cleaning semiconductor devices
The present invention relates to dilute aqueous solutions containing phosphoric acid and methods for cleaning plasma etch residue from semiconductor substrates including such dilute aqueous...
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