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8182713 |
Lead-free piezoelectric material
There is provided a lead-free piezoelectric material capable of showing a high piezoelectric coefficient (d33>500 pC/N) exceeding that of soft PZT. The lead-free piezoelectric material contains no...
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8177995 |
Perovskite oxide, process for producing the perovskite oxide, and piezoelectric device
A process for producing a piezoelectric oxide having a composition (Ba, Bi, A)(Ti, Fe, M)O3, where each of A and M represents one or more metal elements. The composition is determined so as to...
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8164234 |
Sputtered piezoelectric material
Piezoelectric actuators having a composition of Pb1.00+x(Zr0.52Ti0.48)1.00−yO3Nby, where x>−0.02 and y>0 are described. The piezoelectric material can have a Perovskite, which can enable good ben...
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8156620 |
Process of making an ultrasonic probe
A method of producing an ultrasonic probe may include superimposing an ultrasonic wave receiving organic piezoelectric element layer made of an organic material on an ultrasonic wave transmitting...
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8147041 |
Piezoelectric element and method for manufacturing the same, liquid-ejecting head and method for manufacturing the same, and liquid-ejecting apparatus
A piezoelectric element includes a piezoelectric film containing lead (Pb), zirconium (Zr), and titanium (Ti). The piezoelectric film has a composition satisfying the relationship of...
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8142678 |
Perovskite type oxide material, piezoelectric element, liquid discharge head and liquid discharge apparatus using the same, and method of producing perovskite type oxide material
A perovskite type oxide of a single crystal structure or a uniaxial-oriented crystal structure is represented by ABO3. Site A includes Pb as a main component and site B includes a plurality of...
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8142679 |
Piezoelectric ceramic composition and piezoelectric element made by using the same
The present invention provides a piezoelectric ceramic composition having a high thermal resistance and a high piezoelectric distortion constant and a piezoelectric element using the piezoelectric...
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8142677 |
Piezoelectric ceramic composition
A piezoelectric ceramic composition excellent in all of the electric property Qmax, heat resisting properties and temperature characteristics of oscillation frequencies is provided. The...
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8119024 |
Piezoelectric single crystal ingot, producing method therefor and piezoelectric single crystal device
A piezoelectric single crystal ingot is produced by the Bridgman method and contains a relaxor having a composition of Pb(Mg, Nb)O3 and lead titanate having a composition of PbTiO3. In the...
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8119022 |
Piezoelectric single crystal and method of production of same, piezoelectric element, and dielectric element
A piezoelectric single crystal and piezoelectric and dielectric application parts using the same are provided, which have all of high dielectric constant K3T, high piezoelectric constants (d33 and...
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8114307 |
Piezoelectric body and liquid discharge head
The present invention provides a piezoelectric element and having a piezoelectric body and a pair of electrodes being contact with the piezoelectric body, wherein the piezoelectric body consists of...
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8110121 |
Lead zirconate titanate with iron/tungstein doping, method of producing a piezoceramic material with the lead zirconate titanate, and use of the piezoceramic material
A piezoceramic composition has a nominal empirical formula of Pb1−aREbAEc[ZrxTiy(FefWw)z]O3. RE is a rare earth metal with a fraction b and AE is an alkaline earth metal with a fraction c. Iron i...
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8102100 |
Piezoelectric material and piezoelectric element
A piezoelectric element includes a first electrode, a piezoelectric film disposed on the first electrode, and a second electrode disposed on the piezoelectric film. The piezoelectric film is...
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8092706 |
Piezoelectric ceramic composition
Disclosed is a piezoelectric ceramic composition which is produced by adding two or more metal elements and has excellent piezoelectric properties. The piezoelectric composition comprises the main...
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8084924 |
Piezoelectric/electrostrictive film element having wavy grain boundaries
An actuator includes a first electrode disposed on the top surface of a ceramic substrate (for example, zirconium oxide), a piezoelectric/electrostrictive substance disposed on the first electrode,...
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8080230 |
Fine-particulate lead zirconium titantes zirconium titanate hydrates and zirconium titanates and method for production thereof
The invention relates to fine-particulate zirconium titanates or lead zirconium titanates and a method for production thereof by reaction of titanium dioxide particles with a zirconium compound or...
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8075795 |
Piezoelectrics, piezoelectric element, and piezoelectric actuator
A piezoelectric body includes a perovskite type compound that is expressed by a compositional formula being Pb (Zrx Ti1-x)1-y My O3, where M is at least one of Ta and Nb, x is in a range of...
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8076828 |
Piezoelectric ceramic composition and piezoelectric ceramic electronic component
A piezoelectric ceramic includes a main constituent represented by the general formula {(1−x) (K1-a-bNaaLib)(Nb1-cTac)O3}−xM2M4O3}, and as accessory constituents, 2α mol of Na, (α+β) mole of an M4′...
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8075105 |
Perovskite-type oxide film, piezoelectric thin-film device and liquid ejecting device using perovskite-type oxide film, as well as production process and evaluation method for perovskite-type oxide film
Provided is a perovskite-type oxide film having a perovskite-type crystal structure and containing lead as a chief component, which, when subjected to Raman microspectroscopy at a plurality of...
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8043987 |
Lead-free ferroelectric/electrostrictive ceramic material
A ceramic composition comprising a binary system solid solution represented by the formulae: (1-x)(Sr1-yBiy)TiO3+x(Na0.5Bi0.5)TiO3 and (1-x)(Sr1-1.5yBiy)TiO3+x(Na0.5Bi0.5)TiO3, wherein 0
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8040024 |
Piezoceramic material, piezoelectric element and non-resonance knock sensor
A piezoceramic material according to an embodiment of the present invention has a composition represented by Pbm{Zr1-x-y-zTixSny(Sb1-nNbn)z}O3 where 1.000≦m≦1.075, 0.470≦x<0.490, 0.020...
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8034250 |
Piezoelectric material
Provided is a piezoelectric material including a lead-free perovskite-type composite oxide which is excellent in piezoelectric characteristics and temperature characteristics and is represented by...
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8034249 |
Piezoelectric/electrostrictive ceramics sintered body
A piezoelectric/electrostrictive ceramic sintered body has a microstructure in which a matrix phase and an additional material phase having different compositions coexist and the additional...
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8021568 |
Nickel-molybdenum-doped lead zirconate titanate, method for the production of a piezoceramic component using said lead zirconate titanate, and use of the piezoceramic component
A piezoceramic composition of a calculated empirical formula Pb1-aREbAEc[ZrxTiy(NinMom)z]O3, wherein RE represents a rare earth metal having a rare earth metal content b, AE represents an alkaline...
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8022604 |
(Li, Na, K)(Nb, Ta)O3 type piezoelectric/electrostrictive ceramic composition containing 30-50 mol% Ta and piezoelectric/electrorestrictive device containing the same
The invention provides a (Li, Na, K)(Nb, Ta)O3 type piezoelectric/electrostrictive ceramic composition capable of being sintered at a low temperature and providing good electric field-induced...
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8012449 |
Method of manufacturing complex metal oxide powder and amorphous complex metal oxide
A method of manufacturing a complex metal oxide powder, the method including: preparing a raw material composition for forming a complex metal oxide; mixing an oxidizing solution including an...
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8004162 |
Piezoelectric device, angular velocity sensor, electronic apparatus, and production method of a piezoelectric device
A piezoelectric device is provided and includes a substrate, a first electrode film, a piezoelectric film, and a second electrode film. The first electrode film is formed on the substrate. The...
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7998362 |
Piezoelectric substance, piezoelectric element, liquid discharge head using piezoelectric element, liquid discharge apparatus, and production method of piezoelectric element
A main component of a piezoelectric substance is PZT which has a perovskite type structure expressed as Pb(ZrxTi1-x)O3, in which x expresses an element ratio Zr/(Zr+Ti) of Zr and Ti in the formula,...
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7999448 |
Piezoelectric material, multilayer actuator and method for manufacturing a piezoelectric component
A piezoelectric material contains a material with the molecular formula P1−c−dDcZd, wherein: 0
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7997692 |
Perovskite oxide, process for producing the same, piezoelectric film, and piezoelectric device
A process for producing a perovskite oxide having a composition expressed by the compositional formulas A(B, C)O3, and determined so as to satisfy the conditions (1), (2), and (3),...
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7990029 |
Ceramic material, method for producing the same, and electro-ceramic component comprising the ceramic material
A ceramic material includes lead zirconate titanate, which additionally contains Nd and Ni. For example, the ceramic material may have a composition according to the following formulae: for...
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7985348 |
Piezoelectric ceramic composition
A piezoelectric ceramic composition having a large piezoelectric constant (d) and as well having a large Qm value is to be provided. The piezoelectric ceramic composition aimed at has a composition...
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7977853 |
Piezoelectric device, and liquid discharge device using the piezoelectric device
A piezoelectric device having a piezoelectric film formed over a substrate through an electrode by vapor phase deposition using plasma, and constituted by columnar crystals of one or more...
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7972527 |
Method of making ternary piezoelectric crystals
A ternary single crystal relaxor piezoelectric grown from a novel melt using the Vertical Bridgeman method. The ternary single crystals are characterized by a Curie temperature, Tc, of at least...
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7960901 |
Piezoelectric device having a ferroelectric film including a ferroelectric material
A method of manufacturing a ceramic includes forming a film which includes a complex oxide material having an oxygen octahedral structure and a paraelectric material having a catalytic effect for...
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7956519 |
Piezoelectric device having a ferroelectric film including a solid solution
A method of manufacturing a ceramic includes forming a film which includes a complex oxide material having an oxygen octahedral structure and a paraelectric material having a catalytic effect for...
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7931821 |
Oxynitride piezoelectric material and method of producing the same
An oxynitride piezoelectric material, which exhibits ferroelectricity and has good piezoelectric properties, and a method of producing the oxynitride piezoelectric material. The oxynitride...
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7908722 |
Process for the preparation of piezoelectric crystal elements
A process for the preparation of piezoelectric single crystal elements involving the steps of mechanically finishing of a single crystal element with cuttings such as zxt±45°, coating electrodes o...
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7906889 |
Metal oxide, piezoelectric material and piezoelectric element
Provided are a piezoelectric material without using lead or an alkali metal, the piezoelectric material having a stable crystal structure in a wide temperature range, high insulation property, and...
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7901590 |
Piezoelectric ceramic composition
A piezoelectric ceramic composition that acquires excellent piezoelectric properties even when it is fired at a low temperature is offered. The piezoelectric ceramic composition possesses a...
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7902726 |
Multi-layer piezoelectric device
To provide a multi-layer piezoelectric device having excellent durability in which the amount of displacement does not change even when the piezoelectric actuator is subjected to continuous...
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7893601 |
(Li, Na, K)(Nb, Ta) O3 based piezoelectric material
Manufacturing sintered bodies having microstructures including microscopic grains having a grain diameter of less than 5 μm, intermediate grains having a grain diameter of 5 μm or more and less t...
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7888848 |
Piezoelectric single crystal device and fabrication method thereof
The present invention provides a piezoelectric single crystal device excellent in heat resistance and capable of stably maintaining the electromechanical coupling factor k31 in a lateral vibration...
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7884531 |
Piezoelectric thin film device
A piezoelectric thin film device according to the present invention comprises a lower electrode, a piezoelectric thin film and a upper electrode, in which the piezoelectric thin film is formed of...
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7872402 |
Perovskite-oxide laminates, and piezoelectric devices, and liquid discharge devices containing the same
A perovskite-oxide lamination constituted by a substrate and one or tore first films of a first oxide of a perovskite type and one or more second films of a second oxide which are alternately...
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7872403 |
Method for manufacturing piezoelectric film element, and piezoelectric film element
A method for manufacturing a piezoelectric film element includes foursteps. The first is to form a bottom electrode on a Si substrate. The second is to form a seed layer with a layered perovskite...
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7842390 |
Chain end functionalized fluoropolymers having good electrical properties and good chemical reactivity
Chain end functionalized fluoropolymers are disclosed exhibiting good chemical reactivity high breakdown electric field (E>100 MV/m) and high dielectric constants (i.e., ∈>10). The polymers can b...
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7838453 |
Ceramic powder and method for producing ceramic powder
A ceramic powder contains a principal component that is a perovskite-type complex oxide represented by the formula ANbO3 (A is at least one selected from alkali metal elements and contains 10 mole...
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7820723 |
Method of preparing a stable lead zircon-titanate sol and method for preparing films based on same
A method of preparing a sol of lead zirconium titanate, known as PZT, of formula PbZrxTi(1−x)O3 with 0.45≦x≦0.7, comprises the steps of: (a) preparing a concentrated sol in a diol, the sol compr...
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7781356 |
Epitaxial growth of group III nitrides on silicon substrates via a reflective lattice-matched zirconium diboride buffer layer
A semiconductor structure and fabrication method is provided for integrating wide bandgap nitrides with silicon. The structure includes a substrate, a single crystal buffer layer formed by epitaxy...
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