Matches 1 - 50 out of 197 1 2 3 4 >


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8562871 Composition and associated method  
A composition includes a filler dispersed in a polymeric matrix. The filler may be electrically conducting in a temperature range and may have a Curie temperature. The composition may have a trip...
8470921 Ultra-low permeability polymeric encapsulated acoustic device and method  
This invention is an acoustic device protected by an acoustically transparent low water permeability encapsulant made from an acoustically clear polymer such as polyurethane. High aspect ratio...
8357309 Class of ferromagnetic semiconductors  
Single crystal and polycrystal oxoruthenates having the generalized compositions (Baz,Sr1−z)FexCoyRu6−(x+y)O11 (1≦(x+y)≦5; 0≦z≦1) and (Ba,Sr)M2±xRu4∓xO11 (M=Fe,Co) belong to a novel class of...
8038972 Higher order silane composition, method for manufacturing film-coated substrate, electro-optical device and electronic device  
A higher order silane composition, includes: a higher order silane compound; and a solvent containing one of a substituted hydrocarbon based solvent and an unsubstituted hydrocarbon based solvent....
7824576 Dispersion strengthened lithium and method therefor  
A composite material includes lithium hydride particles dispersed within lithium to form a lithium-lithium hydride composite. The lithium-lithium hydride composite has increased strength over pure...
7781763 Composition for forming passivation layer and organic thin film transistor comprising the passivation layer  
Disclosed herein is a composition including a perfluoropolyether derivative, a photosensitive polymer or a copolymer thereof, and a photocuring agent, a passivation layer, organic thin film...
7708912 Variable impedance composition  
A variable impedance composition according to one aspect of the present invention comprises a high electro-magnetic permeability powder in an amount from 10% to 85% of the weight of the variable...
7517470 Organic-inorganic hybrid material, composition for synthesizing the same, and manufacturing method of the same  
An organic-inorganic hybrid material comprising a metal oxide and a chelating ligand is synthesized. The function of a coloring property, a light-emitting property, or semiconductivity of the...
7404913 Codoped direct-gap semiconductor scintillators  
Fast, bright inorganic scintillators at room temperature are based on radiative electron-hole recombination in direct-gap semiconductors, e.g. CdS and ZnO. The direct-gap semiconductor is codoped...
7338615 Dielectric media  
A novel method of fabrication of periodic dielectric composites involving a flexible computer design stage, rapid growth of a second dielectric component. Laser stereolithography is used to form...
7270765 Composition for forming dielectric layer, MIM capacitor and process for its production  
To provide a composition for forming a dielectric layer excellent in dielectric constant and withstand voltage properties, a MIM capacitor and a process for its production. A composition for...
7238296 Resistive composition, resistor using the same, and making method thereof  
When the entire amount of conductive metal mixed powder made of copper, manganese, and germanium is 100 parts by weight, the metal mixed powder is formed by mixing 4.0 to 13.0 parts manganese by...
7083745 Production method for laminate type dielectric device and electrode paste material  
This invention provides a method of producing a laminate type dielectric device free from peeling of an electrode layer and a ceramic layer and from voids in both electrode layer and ceramic...
6878304 Reduction resistant thermistor, method of production thereof, and temperature sensor  
A highly accurate reduction resistant thermistor exhibiting stable resistance characteristics even under conditions where the inside of a metal case of a temperature sensor becomes a reducing...
6858154 Thermoelectric material and method of manufacturing the same  
A thermoelectric material having large thermoelectric figure of merit is provided. A thin film comprising nanometer-sized particles having their diameters distributing within the range of 0.5 nm...
6663794 Reducing-atmosphere-resistant thermistor element, production method thereof and temperature sensor  
This invention provides a reducing-atmosphere-resistant thermistor element, the resistance of which does not greatly change even when the element is exposed to a reducing atmosphere, and which has...
6645393 Material compositions for transient voltage suppressors  
The material for transient voltage suppressors is composed of at least two kinds of evenly-mixed powders including a powder material with non-linear resistance interfaces and a conductive powder....
6627120 Conductive paste and laminated ceramic electronic component  
In order to achieve miniaturization and an increase in the capacitance of a monolithic ceramic capacitor, a conductive paste suitable for forming an internal conductor film is provided, the layer...
6586867 Glass spacer of particular composition and electron-beam emitting display device  
A glass spacer for an electron-beam emitting display device is composed of non alkaline glass having almost the same linear expansion coefficient as that of soda-lime-silica glass. The glass...
6305840 Thermopile detector and method for fabricating the same  
Thermopile detector and method for fabricating the same, the method including the steps of (1) forming a diaphragm film on a substrate, (2) forming thermocouples in a given region on the diaphragm...
6291088 Inorganic overcoat for particulate transport electrode grid  
An inorganic, top-surface, semiconducting dielectric overcoat, having a selected time constant permits electric field charge and dissipation at a selected rate to facilitate particulate material...
6264857 Proton conductors which are thermally stable over a wide range and have good proton conductivities  
Proton conductors comprising from 1 to 99% by weight of an acid and from 99 to 1% by weight of a nonaqueous amphoteric material which are thermally stable from -50° C. to 400° C. and have a proton...
6265462 Method for Producing a Diffusion Barrier and Polymeric Article Having a Diffusion Barrier  
A method of forming a diffusion barrier on an article of a polymer blend of (i) a high surface energy polymer and (ii) a low surface energy polymer. Most commonly the low surface energy polymer is...
6103138 Silicon-system thin film, photovoltaic device, method for forming silicon-system thin film, and method for producing photovoltaic device  
This invention provides a silicon-system thin film, characterized by containing at least 1 ppm of phosphorus atoms and diffraction intensity at the (220) plane with X ray or electron beams of at...
6028264 Semiconductor having low concentration of carbon  
Non-single-crystalline semiconductor material or device containing carbon impurity in a concentration less than 4×1018 atoms/cm3.
5965056 Radio wave absorbent  
A radio wave absorbent comprises an Ni--Cu--Zn base ferrite having a major composition comprising 49 to less than 50 mol % of Fe2 O3, 32 to 35 mol % of ZnO, 3 to 9 mol % of CuO and 9 to 14 mol %...
5949130 Semiconductor integrated circuit device employing interlayer insulating film with low dielectric constant  
A plurality of lines are formed on the principal face of a substrate. An insulating film is formed on the principal surface of this substrate so as to cover the lines. This insulating film...
5665176 n-Type thermoelectric materials  
An n-type thermoelectric material composed mainly of an iron-silicite compound represented by a chemical formula of FeSi2+z in which -0.1
5571495 Dielectric thin film of substituted lead titanate  
Proposed is a dielectric thin film of a substituted lead titanate having a chemical composition expressed by the formula Pb(Ti1-x Mx)O3in which the subscript x is a positive number in the range...
5523022 Semiconductor compound  
Novel compound semiconductors are of the general formula, X5 YZ4, wherein X is a member selected from the group consisting of Cu, Ag and mixtures thereof, Y is a member selected from the group...
5454861 Composition for forming protective layer of dielectric material  
There is disclosed a composition for forming a protective layer of a dielectric material which comprises: (A) alkaline earth metal oxide particles; and (B) one or more organic compounds containing...
5439742 Electrical insulating vinyl halide resin compositions  
Electrical insulating compositions of vinyl halide resins (PVC) are formulated to contain a polymeric metal aromatic polycarboxylate as an electrical insulating additive. For example, polymeric...
5427716 Compound semiconductors and semiconductor light-emitting devices using the same  
Novel compound semiconductors are of the general formula, X5 YZ4,wherein X is a member selected from the group consisting of Cu, Ag and mixtures thereof, Y is a member selected from the group...
5382387 Mouldings containing expandable graphite, their production and their use  
Mouldings containing expanded expandable graphite are characterised in that they additionally contain acid phosphates of metals of group 2 and/or 3 of the periodic table of the elements and/or...
5322813 Method of making supersaturated rare earth doped semiconductor layers by chemical vapor deposition  
A CVD process for producing a rare earth-doped, epitaxial semiconductor layer on a substrate is disclosed. The process utilizes a silane or germane and a rare earth compound in the gas phase. By...
5089082 Process and apparatus for producing silicon ingots having high oxygen content by crucible-free zone pulling, silicon ingots obtainable thereby and silicon wafers produced therefrom  
Silicon ingots, in particular, with diameters of approximately 75 mm and greater, can be produced by zone pulling with an oxygen content comparable to crucible-pulled material if a flat quartz...
5067989 Single crystal silicon  
Single crystal silicon for a substrate of semiconductor integrated circuits is disclosed. Cu, Fe, Ni and Cr are contained as impurities in a concentration smaller than 0.1 ppta, respectively, and...
5051785 N-type semiconducting diamond, and method of making the same  
N-type semiconducting diamond is disclosed, which is intrinsically, i.e., at the time of diamond formation, doped with n-type dopant atoms. Such diamond is advantageously formed by chemical vapor...
5017308 Silicon thin film and method of producing the same  
A silicon thin film is composed of primarily silicon atoms, 0 to 8 atm % hydrogen, at least one element selected from the group including fluorine, chlorine, bromine and iodine, and an impurity...
5009783 Separation of compositions containing water and organic oxygenates  
Water is separated from aqueous mixtures of organic oxygenates such as isopropanol by pervaporation through a non-porous separating membrane of a blend of polyvinyl alcohol and a polyacrylic acid...
4839701 Hydrogenated amorphous silicon film  
A process for production of a hydrogenated amorphous silicon film of a silicon compound containing at least one element selected from the group consisting of hydrogen and halogens and having a...
4775425 P and n-type microcrystalline semiconductor alloy material including band gap widening elements, devices utilizing same  
An n-type microcrystalline semiconductor alloy material including a band gap widening element; a method of fabricating p-type microcrystalline semiconductor alloy material including a band gap...
4761711 Barrier layer ceramic dielectric capacitor containing barium plumbate  
A barrier layer ceramic capacitor and a method of making the same, using barium plumbate or modified barium plumbate as the base material. The fabricating process is a one step process requiring a...
4713192 Doping of catenated phosphorus materials  
High phosphorus polyphosphides, namely MPx, where M is an alkali metal (Li, Na, K, Rb, and Cs) or metals mimicking the bonding behavior of an alkali metal, and where x=7 to 15 or very much greater...
4670176 Single crystal of compound semiconductor of groups III-V with low dislocation density  
More than two impurities are doped in a host crystal of compound semiconductors. One of the impurities is an anisoelectronic impurity. One or more than one impurities are isoelectronic impurities....
4650539 Manufacture of cadmium mercury telluride  
A layer of Cdx Hg1-x Te is grown on the surface of a substrate by decomposing alkyls of cadmium and telluride in a mercury atmosphere. The substrate is placed in a vessel containing a mercury bath...
4649227 Photoactive pyrite layer and process for making and using same  
Photoactive pyrite layers, whose preparation and use represent a commercially highly interesting alternative to materials hitherto in common use. The semiconductor material chiefly used until now,...
4636248 Method for production of dielectric powder  
A dielectric powder consisting of a solid solution of compounds selected at least one each from the two group (a) and (b) of compounds indicated below and having a chemical composition represented...
4609772 Photovoltaic products and processes  
A photovoltaic cell and the method of manufacturing the same. The cell includes a substrate of, e.g., of aluminum, having a layer of sulfur-stabilized cesium fluoride-like material with the outer...
4600801 Fluorinated, p-doped microcrystalline silicon semiconductor alloy material  
A fluorinated, p-doped microcrystalline semiconductor alloy material; electronic devices incorporating said p-doped material; and the method for fabricating said p-doped material.

Matches 1 - 50 out of 197 1 2 3 4 >