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7391039 |
Semiconductor processing method and system
A secondary electron image generated by an electron beam is detected by a secondary electron/secondary ion detector while a silicon substrate is etched by a focused ion beam from a back surface of...
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7391038 |
Technique for isocentric ion beam scanning
A technique for isocentric ion beam scanning is disclosed. In one particular exemplary embodiment, the technique may be realized by an apparatus for isocentric ion beam scanning. The apparatus may...
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7388218 |
Subsurface imaging using an electron beam
A method of navigating or endpointing a microscopic structure by subsurface imaging using a beam of electrons having sufficient energy to penetrate the surface and produce a subsurface image. For...
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7385209 |
Micromachining process, system and product
Ion beam lithography technique wherein a higher amount of radiation energy is deposited to predetermined regions in the bulk if a suitable substrate. By selecting the radiation nature, its energy...
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7385208 |
Systems and methods for implant dosage control
A system for implantation dosage control. A first interface receives scan position information. A second interface receives beam current information specifying a first beam current value between...
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7385207 |
Movable inclination-angle measuring apparatus for ion beam, and method of use
There is provided a movable ion beam inclination-angle measuring apparatus that can measure the inclination angle of either a spot ion beam or a ribbon ion beam. The apparatus is provided in an...
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7385206 |
Probe-holding apparatus, sample-obtaining apparatus, sample-processing apparatus, sample-processing method and sample-evaluating method
A sample processing apparatus includes a probe, a probe mover for moving the probe such that the probe is brought into contact with a part of a sample, an adhering device for adhering the probe to...
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7385183 |
Substrate processing apparatus using neutralized beam and method thereof
In a substrate processing apparatus using a neutralized beam and a method thereof, the substrate processing apparatus includes: an ion source for emitting an ion beam at an emitting angle;...
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7381977 |
Ion beam profiler
A system, method, and apparatus for determining a profile of an ion beam are provided. The apparatus comprises a measuring device positioned along a path of the ion beam, a drive mechanism, and a...
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7378670 |
Shielding assembly for a semiconductor manufacturing apparatus and method of using the same
A shielding assembly for use in a semiconductor manufacturing apparatus, such as an ion implantation apparatus, includes one or more removable shielding members configured to cover inner surfaces...
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7377228 |
System for and method of gas cluster ion beam processing
System and method of gas-cluster ion beam processing is realized by incorporating improved beam and workpiece neutralizing components. Larger GCIB current transport is enabled by low energy...
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7375355 |
Ribbon beam ion implanter cluster tool
An ion implantation cluster tool for implanting ions into a workpiece is provided, wherein a plurality of beamline assemblies having a respective plurality of ion beamlines associated therewith are...
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7375354 |
Ion implanting method and apparatus
The ion implanting method uses both reciprocatively scanning an ion beam in an X direction and reciprocatively mechanically driving a substrate in a Y direction orthogonal thereto. An implanting...
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7372053 |
Rotating gantry of particle beam therapy system
A rotating gantry includes a link frame for supporting a plurality of rollers which rotatably support the rotating gantry, a brake for releasing a braking force applied to at least one of the...
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7372050 |
Method of preventing charging, and apparatus for charged particle beam using the same
An apparatus for a charged particle beam has a charged particle source; a charged particle optical system for focusing and deflecting a charged particle beam emitted from the charged particle...
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7368734 |
Ion beam measuring method and ion implanting apparatus
A beam current density distribution in y direction of an ion beam 4 at a position of a forestage beam restricting shutter 32 is measured by measuring a change in a beam current of the ion beam ...
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7368729 |
Method, apparatus and system for specimen fabrication by using an ion beam
A method and system for separating and preparing a sample for analysis from a wafer without contaminating the wafer with an element such as Ga. A first ion beam is irradiated on a sample and...
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7365348 |
Adjusting device of an apparatus for generating a beam of charged particles
An adjusting device of an apparatus for generating a beam of charged particles, wherein said beam is for interacting with a target and wherein said adjusting device comprises interface means for...
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7365347 |
Ion implantation apparatus for use in manufacturing of semiconductor device
Disclosed herein is an ion implantation apparatus for use in manufacturing of a semiconductor device, which has a software program including an option for selecting a manipulator, enabling a time...
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7365346 |
Ion-implanting apparatus, ion-implanting method, and device manufactured thereby
An ion-implanting apparatus and method can dynamically control a beam current value with time and does not change energy. This ion-implanting apparatus controls a dynamic change in beam current...
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7365341 |
Gas cluster ion beam emitting apparatus and method for ionization of gas cluster
An emitting apparatus 50 has a gas cluster generation chamber 2 and a nozzle 3 as means for generating a gas cluster and emitting the gas cluster to a processing object 10 . A group of gas...
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7361915 |
Beam current stabilization utilizing gas feed control loop
One or more aspects of the present invention pertain to stabilizing the current or density of an ion beam within an ion implantation system by selectively adjusting a lone parameter of feed gas...
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7361914 |
Means to establish orientation of ion beam to wafer and correct angle errors
One or more aspects of the present invention pertain to a measurement component that facilitates determining a relative orientation between an ion beam and a workpiece. The measurement component is...
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7361913 |
Methods and apparatus for glitch recovery in stationary-beam ion implantation process using fast ion beam control
An ion implanter includes a source of a stationary, planar ion beam, a set of beamline components that steer the ion beam along a normal beam path as determined by first operating parameter values,...
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7361912 |
Doping method, doping apparatus, and control system for doping apparatus
A doping method capable of controlling a dose amount in response to a change the ratio in ion species during a doping process, a control system for controlling a doping amount, and a doping...
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7358511 |
Plasma doping method and plasma doping apparatus
A plasma doping method, even though a plasma doping treatment is repeated, can make a dose from a film to a silicon substrate uniform for each time. The method includes preparing a vacuum chamber...
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7358510 |
Ion implanter with variable scan frequency
An ion implanter includes an ion beam generator configured to generate an ion beam, a scanner configured to scan the ion beam in at least one direction at a scan frequency, and a controller. The...
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7358509 |
Ion implanter, and angle measurement apparatus and beam divergence measurement apparatus for ion implanter
An apparatus is provided which is capable of measuring an angle between a holder and an ion beam without generating particles, with a simple structure, in a short time and at high accuracy even...
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7358508 |
Ion implanter with contaminant collecting surface
An ion implanter includes an ion source for generating an ion beam moving along a beam line and a vacuum or implantation chamber wherein a workpiece, such as a silicon wafer is positioned to...
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7358491 |
Method and apparatus for the depth-resolved characterization of a layer of a carrier
The present invention relates to a method for the depth-resolved characterization of a layer of a carrier. This involves firstly producing a cutout in the layer of the carrier with a sidewall and...
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7355192 |
Adjustable suspension assembly for a collimating lattice
According to one aspect of the invention a plasma-based substrate processing apparatus comprises a collimator holding device, which efficiently and accurately positions a collimator over a...
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7355188 |
Technique for uniformity tuning in an ion implanter system
A technique for uniformity tuning in an ion implanter system is disclosed. In one particular exemplary embodiment, the technique may be realized as a method for ion beam uniformity tuning. The...
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7355176 |
Method of forming TEM specimen and related protection layer
A method of forming a protection layer on a specimen for TEM inspection and a method of forming a specimen for TEM inspection are provided. The method of forming a protection layer on a specimen...
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7354500 |
Mask and apparatus using it to prepare sample by ion milling
A mask for use with a sample preparation apparatus that prepares an ion-milled sample adapted to be observed by an electron microscope is offered. It is possible to prepare the sample having a...
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7351987 |
Irradiation system with ion beam
An irradiation system comprises a beam generation source, a mass analysis device, a beam transformer, a deflector for scanning which swings the beam reciprocally, a beam parallelizing device, an...
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7351986 |
Method and apparatus for reducing cross contamination of species during ion implantation
A wafer support for an ion implanter includes a wafer holder and a support arm for the holder in the implant chamber. A portion of the support arm adjacent the wafer holder is at least...
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7351984 |
Controlling the characteristics of implanter ion-beams
A method and apparatus satisfying growing demands for improving the precision of angle of incidence of implanting ions that impact a semiconductor wafer and the precision of ribbon ion beams for...
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7351983 |
Focused ion beam system
A focused ion beam (FIB) system has an ion beam from an ion source, a condenser lens, a current-limiting aperture, an electrostatic angular aperture control lens, an electrostatic objective lens,...
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7348577 |
Method for controlling a vaporizer of ion implantation equipment during indium implantation process
Disclosed is a method for controlling a vaporizer in ion implantation equipment during indium implantation process. The method comprises the steps of: (a) injecting a solid indium trichloride in a...
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7348576 |
Technique for ion beam angle process control
A technique for ion beam angle process control is disclosed. In one particular exemplary embodiment, the technique may be realized as a method for ion beam angle process control in an ion implanter...
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7345291 |
Device for irradiation therapy with charged particles
The present invention is related to a device for irradiating a patient with a charged particle beam, comprising a number of beam channels attached to a vertical wall, wherein a deflection magnet is...
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7342240 |
Ion beam current monitoring
An ion beam monitoring system includes a charge neutralization system and a sensor. The charge neutralization system is configured to provide a compensating current to control a charge on a front...
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7342239 |
Ion implanation method and device using thereof
An ion implantation method and device for forming an ion implantation area in a predetermined area of a substrate is provided. The method comprises the following steps. First, an ion beam is...
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7342238 |
Systems, control subsystems, and methods for projecting an electron beam onto a specimen
Systems, control subsystems, and methods for projecting an electron beam onto a specimen are provided. One system includes a stage configured to move the specimen with a non-uniform velocity. The...
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7329882 |
Ion implantation beam angle calibration
One or more aspects of the present invention pertain to determining a relative orientation between an ion beam and lattice structure of a workpiece into which ions are to be selectively implanted...
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7326942 |
Ion beam system and machining method
There is a machining method which shortens a cross-section forming time by an ion beam, a machining method which shortens a machining time for separating a micro sample from a wafer, and an ion...
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7326937 |
Plasma ion implantation systems and methods using solid source of dopant material
Plasma ion implantation apparatus includes a process chamber, a platen located in the process chamber for supporting a substrate, a dopant source including a solid dopant element and a vaporizer to...
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7323700 |
Method and system for controlling beam scanning in an ion implantation device
A method and apparatus for controlling ion beam scanning in an ion implanter is disclosed. Before an implant process is commenced, a scan waveform to create a uniform distribution along a magnetic...
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7323695 |
Reciprocating drive for scanning a workpiece
A reciprocating drive system, method, and apparatus for scanning a workpiece are provided, wherein a motor comprising a rotor and stator operable to individually rotate about a first axis is...
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7323685 |
Ion beam processing method
When scanning by an ion beam in advance an area 24 including a reference hole 23 formed at a position other than the area to be processed 25 of a light-shielding film 21 on a glass...
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