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7563380 Electrode assembly for the removal of surface oxides by electron attachment  
An apparatus and a method comprising same for removing metal oxides from a substrate surface are disclosed herein. In one particular embodiment, the apparatus comprises an electrode assembly that...
7553427 Plasma etching of Cu-containing layers  
A method and apparatus are provided for plasma etching of Cu-containing layers in semiconductor devices using an aluminum source in the presence of a halogen-containing plasma. The aluminum source...
7540969 High thermal conducting circuit substrate and manufacturing process thereof  
A manufacturing process of a high thermal conducting circuit substrate is provided. First, a metal core substrate is provided and then the metal core substrate is etched at different etching...
7434719 Addition of D2 to H2 to detect and calibrate atomic hydrogen formed by dissociative electron attachment  
A method of detecting and calibrating dry fluxing metal surfaces of one or more components to be soldered by electron attachment using a gas mixture of reducing gas comprising hydrogen and...
7387738 Removal of surface oxides by electron attachment for wafer bumping applications  
The present invention relates to a method for removing metal oxides from a substrate surface. In one particular embodiment, the method comprises: providing a substrate, a first, and a second...
7368393 Chemical oxide removal of plasma damaged SiCOH low k dielectrics  
A method for removing damages of a dual damascene structure after plasma etching is disclosed. The method comprises the use of sublimation processes to deposit reactive material onto the damaged...
7297285 Manufacturing process of emboss type flexible or rigid printed circuit board  
A manufacturing process of an emboss type flexible or rigid printed circuit board includes multiple steps. First, a layer of dry film is applied to a layer of copper foil. Then a circuit pattern is...
7285229 Etchant and replenishment solution therefor, and etching method and method for producing wiring board using the same  
An etchant of the present invention includes an aqueous solution containing hydrochloric acid, nitric acid, and a cupric ion source. An etching method of the present invention includes bringing the...
7214327 Anisotropic dry etching of Cu-containing layers  
A method and apparatus for dry etching pure Cu and Cu-containing layers ( 220, 310 ) for manufacturing integrated circuits. The invention uses a directional beam of O-atoms with high kinetic energy...
7148073 Methods and systems for preparing a copper containing substrate for analysis  
Methods and systems for preparing a substrate for analysis are provided. One method includes removing a portion of a copper structure on the substrate using an etch chemistry in combination with an...
7086141 Manufacturing method of magnetoresistive effect sensor  
A manufacturing method of an MR sensor including a step of stacking an anti-ferromagnetic layer made of an electrically conductive anti-ferromagnetic material, a step of stacking a pinned layer on...
7063091 Method for cleaning the surface of a substrate  
A cleaning process for cleaning the surface of a substrate is disclosed, wherein the surface comprises portions of a dielectric material and portions of a conductive material. According to the...
7064076 Process for low temperature, dry etching, and dry planarization of copper  
The subject invention pertains to a method and apparatus for etching copper (Cu). The subject invention can involve passing a halide gas over an area of Cu such that CuX, or CuX and CuX 2 , are...
6987067 Semiconductor copper line cutting method  
A method of repairing a semiconductor chip containing copper is taught, whereby copper is selectively removed from the chip. The method involves processing the chip inside a chamber in which the...
6960306 Low Cu percentages for reducing shorts in AlCu lines  
In a method of fabricating a metallization structure during formation of a microelectronic device, the improvement of reducing metal shorts in blanket metal deposition layers later subjected to...
6949202 Apparatus and method for flow of process gas in an ultra-clean environment  
Processes for the addition or removal of a layer or region from a workpiece material by contact with a process gas in the manufacture of a microstructure are enhanced by the use of recirculation of...
6939796 System, method and apparatus for improved global dual-damascene planarization  
A system and method for planarizing a patterned semiconductor substrate includes receiving a patterned semiconductor substrate. The patterned semiconductor substrate having a conductive...
6843899 2D/3D chemical sensors and methods of fabricating and operating the same  
Chemical sensors include a flexible substrate, a flexible lower electrode on the flexible substrate, and a patterned flexible dielectric layer on the flexible lower electrode opposite the flexible...
6840249 Method for cleaning a semiconductor device  
In order to clean a semiconductor device having a dielectric layer deposited on a top surface of a lower metal wiring of the semiconductor device, and a contact hole or a via hole formed in the...
6824655 Process for charged particle beam micro-machining of copper  
A micro-machining process that includes etching a substrate having copper overlying a dielectric layer to a charged particle beam in the presence of an etch assisting agent. The etch assisting...
6782897 Method of protecting a passivation layer during solder bump formation  
A method for protecting a passivation layer during a solder bump formation process including providing a semiconductor process wafer having a process surface including at least two metal layers...
6780342 Method of etching and method of plasma treatment  
A processing gas constituted of CH 2 F 2 , O 2 and Ar is introduced into a processing chamber 102 of a plasma processing apparatus 100 . The flow rate ratio of the constituents of the...
6773616 Formation of nanoscale wires  
Self-organized, or self-assembled, nanowires of a first composition may be used as an etching mask for fabrication of nanowires of a second composition. The method for forming such nanowires...
6764606 Method and apparatus for plasma processing  
In a plasma processing apparatus according to the present invention, a gas inlet port and a discharge port are provided on a chamber for introducing and discharging gas into and from the chamber...
6743369 Method for manufacturing electrode for secondary battery  
A method of manufacturing an electrode for a secondary battery by depositing a thin film composed of active material on a current collector in which a surface-treated layer such as an...
6733597 Method of cleaning a dual damascene structure  
A method is provided for cleaning a dual damascene structure. A first metal layer, a cap layer, and a dielectric layer are formed on a substrate in sequence. Then a dual damascene opening is formed...
6730237 Focused ion beam process for removal of copper  
A process for milling copper metal from a substrate having an exposed copper surface includes absorbing a halogen gas onto the exposed copper surface to generate reaction products of copper and the...
6708404 Method of producing high-density copper clad multi-layered printed wiring board having highly reliable through hole  
A method of making a high-density copper-clad multi-layered printed wiring board having a reliable through hole including providing a stacked assembly including three copper foil layers and at...
6682659 Method for forming corrosion inhibited conductor layer  
A method for passivating a target layer. There is first provided a substrate. There is then formed over the substrate a target layer, where the target layer is susceptible to corrosion incident to...
6630402 Integrated circuit resistant to the formation of cracks in a passivation layer  
In integrated circuits produced by etching and damascene techniques, it is common for cracking to occur in dielectric material surrounding an interconnect metal layer integrated into the device,...
6579565 Clad sheet for printed circuit board, a multilayered printed circuit board using thereof and manufacturing method thereof  
A multilayered circuit board is produced by: a. laminating a copper foil conductor layer and a nickel foil or nickel plating etch-stopping layer by simultaneously press-bonding the nickel and...
6569775 Method for enhancing plasma processing performance  
A method of improving plasma processing of a semiconductor wafer by exposing the wafer or the plasma to photons while the wafer is being processed. One embodiment of the method comprises the steps...
6547934 Reduction of metal oxide in a dual frequency etch chamber  
The invention generally provides an apparatus and a method of removing metal oxides, particularly copper oxides and aluminum oxides, from a substrate surface. Primarily, the invention eliminates...
6544663 Electrodeposited copper foil  
An object of the present invention is to provide a copper foil having excellent adhesion to an etching resist layer, without performing physical polishing such as buffing in pre-treatment of an...
6534416 Control of patterned etching in semiconductor features  
Copper can be pattern etched in a manner which provides the desired feature dimension and integrity, at acceptable rates, and with selectivity over adjacent materials. To provide for feature...
6509276 Focused ion beam etching of copper with variable pixel spacing  
A method including introducing a focused ion beam to a metal material on a substrate within a processing chamber and etching the metal material with variable pixel spacing.
6488862 Etched patterned copper features free from etch process residue  
Copper can be pattern etched at acceptable rates and with selectivity over adjacent materials using an etch process which utilizes a solely physical process which we have termed “enhanced...
6464889 Surface modification of medical implants  
An irregularly etched metallic medical implant device is provided having random non-uniform relief patterns on the surface ranging from about 0.3 μm to less than about 20 μm in depth. The random,...
6352081 Method of cleaning a semiconductor device processing chamber after a copper etch process  
The present invention is a method for removing deposited etch byproducts from surfaces of a semiconductor processing chamber after a copper etch process. The method of the invention comprises the...
6296777 Structuring process  
A layer is structured by first applying a sacrificial layer on the layer to be structured, forming a mask with an inorganic material on the sacrificial layer, then patterning the sacrificial layer...
6280641 Printed wiring board having highly reliably via hole and process for forming via hole  
Disclosed are a printed wiring board having micro-via holes highly reliable for conduction and a method of making the micro-via hole by providing a coating or sheet of an organic substance...
6258727 Method of forming metal lands at the M0 level with a non selective chemistry  
The starting structure consists of a silicon substrate having diffused regions formed therein and gate conductor stacks formed thereupon that is passivated by a TEOS layer as standard. At a further...
6171956 Method for improving the thermal conductivity of metal lines in integrated circuits  
The method includes forming a metal layer over a substrate. Subsequently, a discrete dot masking is deposited on the surface of the metal layer. A discrete rugged polysilicon or hemispherical...
6156218 Method of pretreatment for electroless nickel plating  
6129858 Etching solution  
An electrolytically reclaimable etching solution for etching circuit boards and mold parts of copper and copper-based alloys, with a content of copper tetrammine sulfate, ammonia, ammonium sulfate,...
6051152 Process for making diamond and diamond-coated filaments  
Filamentous substrates are coated with diamond by a chemical vapor deposition process. The substrate may then be etched away to form a diamond filament, such as a diamond tube or a diamond fiber....
6033588 Method for improving differential etching rate of a metallic layer  
A method for improving the differential etching rate of forming vias in a metallic layer by the addition of a nitrogen plasma processing operation into the conventional metal etching operation. The...
6010603 Patterned copper etch for micron and submicron features, using enhanced physical bombardment  
Copper can be pattern etched at acceptable rates and with selectivity over adjacent materials using an etch process which utilizes a solely physical process which we have termed "enhanced physical...
5998297 Method of etching copper or copper-doped aluminum  
An embodiment of the instant invention is a method of etching a conductive structure comprised of copper and overlying a semiconductor substrate, the method comprising the step of: subjecting the...
5968711 Method of dry etching A1Cu using SiN hard mask  
A new method of etching AlCu or AlSiCu lines is described. Semiconductor device structures are provided in and on a semiconductor substrate. The semiconductor device structures are covered with an...
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