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7569154 Plasma processing method, plasma processing apparatus and computer storage medium  
A plasma processing method in which plasma can be ignited stably with a low radio frequency power and a low gas pressure even after long time operation by applying a DC voltage of −0.5 kV, for...
7432209 Plasma dielectric etch process including in-situ backside polymer removal for low-dielectric constant material  
A plasma etch process with in-situ backside polymer removal begins with a workpiece having a porous or non-porous carbon-doped silicon oxide dielectric layer and a photoresist mask on a surface of...
7291559 Etching method, gate etching method, and method of manufacturing semiconductor devices  
In a method of manufacturing a semiconductor device, a dummy sample and an actual device are prepared. The dummy sample and the actual device have substantially an identical layer and an identical...
RE39895 Semiconductor integrated circuit arrangement fabrication method  
To realize etching with a high selection ratio and a high accuracy in fabrication of an LSI, the composition of dissociated species of a reaction gas is accurately controlled when dry-etching a...
7256134 Selective etching of carbon-doped low-k dielectrics  
The present invention includes a process for selectively etching a low-k dielectric material formed on a substrate using a plasma of a gas mixture in a plasma etch chamber. The gas mixture...
7232762 Method for forming an improved low power SRAM contact  
A method of forming contact openings in a semiconductor device including providing a semiconducting substrate; forming an etch stop layer on said semiconducting substrate; forming a dielectric...
7170027 Microwave plasma processing method  
A microwave plasma processing method is provided which enables a uniform thin film layer to be formed on a surface to be processed and which enables a short time processing. In the microwave plasma...
7048869 Plasma processing apparatus and a plasma processing method  
In an oxide film etching process, a plasma having a suitable ratio of CF 3 , CF 2 , CF, F is necessary, and there is a problem in that the etching characteristic fluctuates with a temperature...
7033514 Method and apparatus for micromachining using a magnetic field and plasma etching  
This invention relates to a method and apparatus for forming a micromachined device, where a workpiece is plasma etched to define a microstructure. The plasma etching is conducted in the presence...
6899817 Device and method for etching a substrate using an inductively coupled plasma  
A method and a suitable device for carrying out this method is proposed, for etching a substrate ( 10 ), especially a silicon element, with the aid of an inductively coupled plasma ( 14 ). For this...
6809019 Method for producing a semiconductor structure, and use of the method  
A method for producing a semiconductor structure includes applying at least one first layer, etching the first layer using a masking layer such that fences are produced, and, after removal of the...
6673722 Microwave enhanced CVD system under magnetic field  
An improved chemical vapor deposition or etching is shown in which cyclotron resonance and photo or plasma CVD cooperate to deposit a layer with high performance at a high deposition speed. The...
6652763 Method and apparatus for large-scale diamond polishing  
A method and apparatus for the polishing of diamond surfaces, wherein the diamond surface is subjected to plasma-enhanced chemical etching using an atomic oxygen polishing plasma source, are...
6573190 Dry etching device and dry etching method  
A dry etching apparatus and method which can uniformly and stably generate a high-density plasma over a wide range, and can cope with increase of wafer diameter and making the pattern finer in etch...
6561198 Method and installation for treating a metal part surface  
In this method for the surface treatment of a metal part ( 12 ) for the purpose of deoxidizing it and/or cleaning it, a sealed chamber ( 16 ), in which the part to be treated is placed, is filled...
6531069 Reactive Ion Etching chamber design for flip chip interconnections  
RIE processing chambers includes arrangements of gas outlets which force gas-flow-shadow elimination. Means are provided to control and adjust the direction of gases to the outlet to modify and...
6527968 Two-stage self-cleaning silicon etch process  
A process for etching a substrate 25 in an etching chamber 105, and simultaneously removing etch residue deposited on the surfaces of the walls 110 and components of the etching chamber 105....
6526996 Dry clean method instead of traditional wet clean after metal etch  
A dry cleaning method for use in semiconductor fabrication, including the following steps. An etched metallization structure is provided and placed in a processing chamber. The etched metallization...
6506686 Plasma processing apparatus and plasma processing method  
In a plasma processing apparatus that has a vacuum chamber, a process gas supply means of supply gas to a processing chamber, an electrode to hold a sample inside said vacuum chamber, a plasma...
6506687 Dry etching device and method of producing semiconductor devices  
A technique of dry etching the surface of a wafer by using a dry etching apparatus in which the distance between a wafer and a surface facing the wafer is set to the half or less of the diameter of...
6436304 Plasma processing method  
A plasma processing method using helicon wave excited plasma which makes it possible to control a degree of dissociation for a process gas by controlling the source power. In the plasma processing...
6402974 Method for etching polysilicon to have a smooth surface  
In accordance with the present invention, during a polysilicon etch back, a controlled amount of oxygen (O 2 ) is added to the plasma generation feed gases, to reduce pitting of the etched back...
6383403 Dry etching method  
A substrate to be etched is subjected to dry etching by using a dry etching gas containing a perfluorocycloolefin while a plasma with a high density region of at least 10 10 /cm 3 is generated. As...
6375860 Controlled potential plasma source  
The occurrence of internally-formed contaminants or negatively-charged particulates within a plasma is minimized by preventing such from becoming trapped in the plasma. The plasma is formed in a...
6350701 Etching system  
A small, light-weight and highly maintainable etching system and an etching method for etching a large substrate with a homogeneous etching rate are provided. The etching system comprises an...
6248252 Method of fabricating sub-micron metal lines  
Methods of fabricating interconnects of aluminum and aluminum alloys are provided. In one aspect, a method is provided for fabricating an interconnect of aluminum-containing material on a surface....
6210595 Method for producing structures having a high aspect ratio and structure having a high aspect ratio  
A method for producing structures having a high aspect ratio includes the following steps: a material of the structure to be produced is provided in the form of a layer, a mask is applied to the...
6146542 Dry etching method of multilayer film  
A dry etching method of a multilayer film for a semiconductor device includes a first step for etching a metallic layer or a metallic silicide layer by use of a compound gas plasma mixed by a first...
6132632 Method and apparatus for achieving etch rate uniformity in a reactive ion etcher  
A method and apparatus for achieving etch rate uniformity in a reactive ion etcher. The reactive ion etcher generates a plasma within a vacuum chamber for etching a substrate disposed at a cathode...
6077787 Method for radiofrequency wave etching  
A method for selective controlled etching of a material particularly by sequentially switching between two (2) or more modes of radiofrequency waves and/or by distance from a source of the...
6062237 Polymer removal from top surfaces and sidewalls of a semiconductor wafer  
A process for producing a strip removes photoresist and extraneous deposits of polymer residue on the top surface and sidewalls of a post-metal etch wafer. The photoresist and residue are processed...
6054063 Method for plasma treatment and apparatus for plasma treatment  
The high-frequency electric field is subjected to pulse modulation for 10 to 100 μsec; the rise time of pulse is controlled to be not shorter than 2 μsec but not longer than 50 μsec; and the...
6046425 Plasma processing apparatus having insulator disposed on inner surface of plasma generating chamber  
A plasma processing apparatus includes a plasma processing chamber defining a plasma region. The plasma processing chamber has an inner metallic portion defining at least a portion of the plasma...
6022803 Fabrication method for semiconductor apparatus  
In a fabrication method of a semiconductor apparatus, the semiconductor apparatus is made with a selective gold plating process rather than an ion-milling process. A tungsten film (W film) as a...
6022460 Enhanced inductively coupled plasma reactor  
An enhanced inductively coupled plasma reactor which comprises; a chamber; a power supply for providing radio-frequencies necessary to generate plasma within the chamber; an antenna for producing...
5998986 Method of cleaning probe of probe card and probe-cleaning apparatus  
A method for cleaning probes of a probe card used for testing semiconductor wafers and an apparatus for carrying out the cleaning method. Microwave energy is supplied to and a magnetic field is...
5994236 Plasma source with process nonuniformity improved using ferromagnetic cores  
The present invention uses the placement of ferromagnetic cores to improve the nonuniformity of plasma processing and to increase the energy transfer efficiency of plasma sources which couple...
5985091 Microwave plasma processing apparatus and microwave plasma processing method  
A microwave plasma processing apparatus comprises a plasma generation chamber, a processing chamber communicating with the plasma generation chamber, supporting of a substrate to be processed...
5975014 Coaxial resonant multi-port microwave applicator for an ECR plasma source  
A method and apparatus employing a microwave applicator for use with an ECR plasma source for applications including etching and chemical vapor deposition is provided. A magnetic field is generated...
5961850 Plasma processing method and apparatus  
A plasma processing apparatus and method controls the temperature of those portions in the processing chamber to which reaction products or gaseous reaction products generated during plasma...
5936352 Plasma processing apparatus for producing plasma at low electron temperatures  
A plasma processing apparatus includes a plasma chamber and an antenna formed by a first set of parallel antenna elements and a second set of parallel antenna elements, the antenna elements of the...
5906948 Method for etching high aspect-ratio multilevel contacts  
A method for etching dielectric layers is disclosed. A first etch of the dielectric layers is performed with a gas chemistry comprising C 4 F 8 flowing at about 10 sccm to about 25 sccm and CH 3 ...
5888414 Plasma reactor and processes using RF inductive coupling and scavenger temperature control  
A plasma reactor chamber uses an antenna driven by RF energy (LF, MF, or VHF) which is inductively coupled inside the reactor dome. The antenna generates a high density, low energy plasma inside...
5880034 Reduction of semiconductor structure damage during reactive ion etching  
Uniformity of plasma density and potential are increased by reducing plasma confinement through use of a non-uniform, graded magnetic field by asymmetric energization of electromagnets with a...
5874012 Plasma processing apparatus and plasma processing method  
A plasma processing apparatus is provided. In the apparatus, an inside surface of a process chamber is prevented from having its quality varied or becoming a heavy metal contamination source by...
5849640 In-situ SOG etchback and deposition for IMD process  
A method is disclosed for improved planarization and deposition of intermetal dielectric layers in semiconductor substrates. More specifically, the method involves the performance of specific...
5830807 Successive dry etching of alternating laminate  
A laminated structure formed by alternately laminating a silicon film and a silicon oxide film is successively etched in the same chamber. Two groups are selected from groups A, B, and C, the group...
5824607 Plasma confinement for an inductively coupled plasma reactor  
A plasma reactor chamber uses an antenna driven by RF energy (LF, MF, or VHF) which is inductively coupled inside the reactor dome to provide a plasma source. The antenna generates a high density,...
5779925 Plasma processing with less damage  
A method of manufacturing a semiconductor device including the steps of: (a) transporting a semiconductor wafer into a plasma process system, the semiconductor wafer having a semiconductor layer, a...
5762814 Plasma processing method and apparatus using plasma produced by microwaves  
A plasma processing apparatus includes a plasma processing chamber having a stage for placing a substrate to be plasma processed, an exhaust port and a gas introduction nozzle for plasma processing...
Matches 1 - 50 out of 101 1 2 3 >