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7601619 |
Method and apparatus for plasma processing
A method and an apparatus for plasma processing which can accurately monitor an ion current applied to the surface of a sample. Predetermined gas is exhausted via an exhaust port by a...
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7497964 |
Plasma igniting method and substrate processing method
A method to solve such a problem that plasma will not ignite in restarting operation of a processing container that has not been operated with the inside kept drawn to vacuum. Gas containing oxygen...
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7485580 |
Method for removing organic electroluminescent residues from a substrate
A process for removing organic electroluminescent residues from a substrate is described herein. The process includes the steps of providing a process gas comprising a fluorine-containing gas,...
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7465406 |
Method of exposing a substrate to a surface microwave plasma, etching method, deposition method, surface microwave plasma generating apparatus, semiconductor substrate etching apparatus, semiconductor substrate deposition apparatus, and microwave plasma generating antenna assembly
In certain implementations, methods and apparatus include an antenna assembly having at least two overlapping and movable surface microwave plasma antennas. The antennas have respective pluralities...
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7452660 |
Method for resist strip in presence of low K dielectric material and apparatus for performing the same
A method and apparatus is provided for using a plasma generated from a processing gas mixture including H 2 O to efficiently strip photoresist material without causing significant damage to...
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7393460 |
Plasma processing method and plasma processing apparatus
The plasma processing method comprises the step of removing an organic material film forming an upper layer relative to a patterned SiOCH series film by the processing with a plasma of a process...
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7375947 |
Method of feedback control of ESC voltage using wafer voltage measurement at the bias supply output
In a plasma reactor having an electrostatic chuck, wafer voltage is determined from RF measurements at the bias input using previously determined constants based upon transmission line properties...
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7374696 |
Method and apparatus for removing a halogen-containing residue
The invention provides for a method and integrated system for removing a halogen-containing residue from a substrate comprising etching the substrate, heating the substrate and exposing the heated...
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7322368 |
Plasma cleaning gas and plasma cleaning method
A plasma cleaning gas for CVD chamber is a gas for cleaning silicon-containing deposits on the surface of a CVD chamber inner wall and the surfaces of members placed inside the CVD chamber after...
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RE39895 |
Semiconductor integrated circuit arrangement fabrication method
To realize etching with a high selection ratio and a high accuracy in fabrication of an LSI, the composition of dissociated species of a reaction gas is accurately controlled when dry-etching a...
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7259104 |
Sample surface processing method
A surface processing method of a sample having a mask layer that does not contain carbon as a major component formed on a substance to be processed, the substance being a metal, semiconductor and...
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7232762 |
Method for forming an improved low power SRAM contact
A method of forming contact openings in a semiconductor device including providing a semiconducting substrate; forming an etch stop layer on said semiconducting substrate; forming a dielectric...
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7159536 |
Device and method for generating a local by micro-structure electrode dis-charges with microwaves
Device for producing a plasma, in particular for treating surfaces, for chemically reacting gases, or for producing light, by way of microstructure electrode discharges, using a device for...
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7111629 |
Method for cleaning substrate surface
There is provided a surface cleaning apparatus and method using plasma to remove a native oxide layer, a chemical oxide layer, and a damaged portion from a silicon substrate surface, and...
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7097782 |
Method of exposing a substrate to a surface microwave plasma, etching method, deposition method, surface microwave plasma generating apparatus, semiconductor substrate etching apparatus, semiconductor substrate deposition apparatus, and microwave plasma generating antenna assembly
In certain implementations, methods and apparatus include an antenna assembly having at least two overlapping and movable surface microwave plasma antennas. The antennas have respective pluralities...
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7097779 |
Processing system and method for chemically treating a TERA layer
A processing system and method for chemically treating a TERA layer on a substrate. The chemical treatment of the substrate chemically alters exposed surfaces on the substrate. In one embodiment,...
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7088047 |
Inductively coupled plasma generator having low aspect ratio
An inductively coupled plasma generator having a lower aspect ratio reaction gas, comprising a chamber having a gas inlet through which a reaction gas is supplied, a vacuum pump for maintaining the...
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7048869 |
Plasma processing apparatus and a plasma processing method
In an oxide film etching process, a plasma having a suitable ratio of CF 3 , CF 2 , CF, F is necessary, and there is a problem in that the etching characteristic fluctuates with a temperature...
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7025895 |
Plasma processing apparatus and method
A plasma processing apparatus and method are capable of performing etching with high precision without damaging the semiconductor wafer. The plasma processing apparatus has a plasma generation...
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7014788 |
Surface treatment method and equipment
A method for treating material surface utilizing atomic hydrogen. The method includes utilizing atomic hydrogen by mixing halogen and/or halide to a gas which is used for generating, atomic...
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6991739 |
Method of photoresist removal in the presence of a dielectric layer having a low k-value
A method of photoresist removal is described. A substrate is located in a processing chamber. A mixture of gases is excited, the mixture comprising a majority component of a reducing process gas...
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6981508 |
On-site cleaning gas generation for process chamber cleaning
Provided herein is a method for cleaning a process chamber for semiconductor and/or flat panel display manufacturing. This method comprises the steps of converting a non-cleaning feed gas to a...
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6967170 |
Methods of forming silicon nitride spacers, and methods of forming dielectric sidewall spacers
The invention includes a method of patterning a material over a semiconductive substrate, comprising: a) forming a layer of first material against a second material and over the substrate, the...
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6905626 |
Notch-free etching of high aspect SOI structures using alternating deposition and etching and pulsed plasma
A method of preventing notching during a cyclical etching and deposition of a substrate with an inductively coupled plasma source is provided by the present invention. In accordance with the...
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6852243 |
Confinement device for use in dry etching of substrate surface and method of dry etching a wafer surface
A confinement device for operative arrangement within a substrate etching chamber, having a lower surface of the device generally arranged over a substrate outer top surface such that a gap-spacing...
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6841201 |
Apparatus and method for treating a workpiece using plasma generated from microwave radiation
An apparatus and method that generates plasma using a microwave radiation supply. The plasma is used to treat a surface of a workpiece at approximately atmospheric pressure. Plasma excites a...
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6824699 |
Method of treating an insulting layer
This invention relates to a method of heating an insulating layer, such as is found in semiconductor devices, in which a formation has been etched through a layer of resist comprising reactive...
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6809019 |
Method for producing a semiconductor structure, and use of the method
A method for producing a semiconductor structure includes applying at least one first layer, etching the first layer using a masking layer such that fences are produced, and, after removal of the...
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6806038 |
Plasma passivation
A method for forming a conductive trace on a substrate. The conductive trace is patterned with a photoresist mask and etched, thereby forming a polymer layer on a top surface and sidewalls of the...
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6764606 |
Method and apparatus for plasma processing
In a plasma processing apparatus according to the present invention, a gas inlet port and a discharge port are provided on a chamber for introducing and discharging gas into and from the chamber...
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6730369 |
Device and method for plasma processing
The vacuum processing chambers 31 of the plasma processing units 3 A and 3 B are connected to the transfer chamber 2 and the wafer W in the positioned state is transferred from the transfer...
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6673722 |
Microwave enhanced CVD system under magnetic field
An improved chemical vapor deposition or etching is shown in which cyclotron resonance and photo or plasma CVD cooperate to deposit a layer with high performance at a high deposition speed. The...
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6660647 |
Method for processing surface of sample
A surface processing method of a sample having a mask layer that does not contain carbon as a major component formed on a substance to be processed, the substance being a metal, semiconductor and...
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6647994 |
Method of resist stripping over low-k dielectric material
An improved and new process for photoresist stripping for use during fabrication of semiconductor integrated circuits, which use porous low-k dielectric materials, such as OSG or HSQ, as the...
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6573190 |
Dry etching device and dry etching method
A dry etching apparatus and method which can uniformly and stably generate a high-density plasma over a wide range, and can cope with increase of wafer diameter and making the pattern finer in etch...
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6561198 |
Method and installation for treating a metal part surface
In this method for the surface treatment of a metal part ( 12 ) for the purpose of deoxidizing it and/or cleaning it, a sealed chamber ( 16 ), in which the part to be treated is placed, is filled...
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6558564 |
Plasma energy control by inducing plasma instability
In the present invention, electron temperature is controlled by modifying the power delivered to the plasma by inducing or enhancing natural instabilities between the plasma and the power source....
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6527968 |
Two-stage self-cleaning silicon etch process
A process for etching a substrate 25 in an etching chamber 105, and simultaneously removing etch residue deposited on the surfaces of the walls 110 and components of the etching chamber 105....
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6451217 |
Wafer etching method
A wafer etching method wherein hydrogen gas, ammonia gas or mixed gas containing one of these gases is added to sulfur hexafluoride gas to suppress the occurrence of white turbidity on the surface...
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6436304 |
Plasma processing method
A plasma processing method using helicon wave excited plasma which makes it possible to control a degree of dissociation for a process gas by controlling the source power. In the plasma processing...
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6435196 |
Impurity processing apparatus and method for cleaning impurity processing apparatus
The present invention relates to an impurity processing apparatus in which impurities such as phosphorus, boron, or the like are doped in a semiconductor substrate, etc., or a PSG...
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6391396 |
Chemical vapor deposition coating of fibers using microwave application
Chemical vapor deposition coating is carried out in a cylindrical cavity. The fibers are heated by a microwave source that is uses a TM 0 N 0 mode, where O is an integer, and produces a field that...
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6383918 |
Method for reducing semiconductor contact resistance
A method is provided for reducing contact resistances in semiconductors. In the use of fluorocarbon plasmas during high selectively sub-quarter-micron contact hole etching, with the silicon...
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6383403 |
Dry etching method
A substrate to be etched is subjected to dry etching by using a dry etching gas containing a perfluorocycloolefin while a plasma with a high density region of at least 10 10 /cm 3 is generated. As...
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6375860 |
Controlled potential plasma source
The occurrence of internally-formed contaminants or negatively-charged particulates within a plasma is minimized by preventing such from becoming trapped in the plasma. The plasma is formed in a...
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6372657 |
Method for selective etching of oxides
An improved dry plasma cleaning process for the removal of native oxides, or other oxide films or growth residue, from openings formed in an insulating layer provided over a semiconductor...
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6368517 |
Method for preventing corrosion of a dielectric material
Method for removing or inactivating corrosion-forming etch residues remaining on the surface of a dielectric material after etching a metal layer which is supported by the dielectric material. The...
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6361707 |
Apparatus and methods for upgraded substrate processing system with microwave plasma source
An apparatus and methods for an upgraded CVD system that provides a plasma for efficiently cleaning a chamber, according to a specific embodiment. Etching or depositing a layer onto a substrate...
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6348158 |
Plasma processing with energy supplied
In a plasma processing method, a plasma is generated using a process gas, and an electron beam is injected into the plasma to control an electron energy distribution in the plasma. Then, a...
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6329297 |
Dilute remote plasma clean
A method and apparatus for enhancing the etch characteristics of a plasma formed in a remote plasma generator. A plasma formed in a remote plasma generator (27) is flown through a tube (62) to a...
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