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7632419 |
Apparatus and method for monitoring processing of a substrate
Apparatus for in-situ monitoring of a process in a semiconductor wafer processing system consists of a process chamber having a dome, an enclosure disposed above the chamber, a process monitoring...
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7628864 |
Substrate cleaning apparatus and method
A substrate cleaning apparatus includes a chamber for accommodating a substrate; a mounting table, disposed in the chamber, for mounting thereon the substrate; an electrode disposed in the mounting...
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7628866 |
Method of cleaning wafer after etching process
A method of cleaning a wafer after an etching process is provided. A substrate having an etching stop layer, a dielectric layer, a patterned metal hard mask sequentially formed thereon is provided....
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7625494 |
Plasma etching method and plasma etching unit
The present invention is a plasma etching method including: an arranging step of arranging a pair of electrodes oppositely in a chamber and making one of the electrodes support a substrate to be...
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7625493 |
Method for manufacturing display device
In order to achieve low cost of manufacture of a display device by reducing the use of primary material used in a manufacturing process of a display device and saving labor taken for a vacuum...
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7622051 |
Methods for critical dimension control during plasma etching
A method of etching a substrate in a plasma processing chamber is disclosed. The method includes introducing the substrate having thereon an underlying layer, an anti-reflective layer above the...
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7622048 |
Sacrificial substrate for etching
A method of etching a silicon substrate is described. The method includes bonding a first silicon substrate to a sacrificial silicon substrate. The first silicon substrate is etched. A pressure is...
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7618548 |
Silicon-containing structure with deep etched features, and method of manufacture
We have developed an uncomplicated method of plasma etching deeply recessed features such as deep trenches, of at least 5 μm in depth, in a silicon-containing substrate, in a manner which...
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7615164 |
Plasma etching methods and contact opening forming methods
The invention includes etching and contact opening forming methods. In one implementation, a plasma etching method includes providing a bottom powered plasma chamber that includes a plasma...
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RE40951 |
Dry etching method for magnetic material
A dry etching method in which a plasma of an etching gas is generated and a magnetic material is dry-etched using a mask material made of a non-organic material, wherein an alcohol having at least...
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7615179 |
Method of imprinting shadow mask nanostructures for display pixel segregation
The present invention is directed to micro- and nano-scale imprinting methods and the use of such methods to fabricate supported and/or free-standing 3-D micro- and/or nano-structures of polymeric,...
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7615495 |
Display device and manufacturing method of the same
A plurality of wires and electrodes are formed by forming a first conductive film, selectively forming a resist over the first conductive film, forming a second conductive film over the first...
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7610670 |
Method for manufacturing a diaphragm assembly
A diaphragm assembly used for a condenser microphone has a diaphragm made of a resin film including a metallized film on one surface of a supporter ring. The diaphragm is made by a first step of...
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7611640 |
Minimizing arcing in a plasma processing chamber
A plasma processing chamber for processing a substrate to form electronic components thereon is disclosed. The plasma processing chamber includes a plasma-facing component having a plasma-facing...
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7608195 |
High aspect ratio contacts
A process for etching a insulating layer to produce an opening having an aspect ratio of at least 15:1 by supplying a first gaseous etchant having at least fifty (50) percent He to a plasma etch...
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7608196 |
Method of forming high aspect ratio apertures
A plasma etch process for etching a dielectric material employing two primary etchants at low flows and pressures, and a relatively low temperature environment within the etch chamber. The two...
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7604750 |
Method for fabricating semiconductor device
A method for fabricating a semiconductor device is provided. The method includes: loading a wafer into a chamber including a ceramic dome coated with a material having etch tolerance against a...
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7604010 |
Film formation apparatus and method of using the same
A film formation apparatus for a semiconductor process includes a cleaning gas supply circuit, a concentration measuring section, and an information processor. The cleaning gas supply circuit is...
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7601272 |
Method and apparatus for integrating metrology with etch processing
An apparatus for integrating metrology and etch processing is disclosed. The apparatus comprises a multi-chamber system having a transfer chamber, an etch chamber and a metrology chamber, and a...
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7601619 |
Method and apparatus for plasma processing
A method and an apparatus for plasma processing which can accurately monitor an ion current applied to the surface of a sample. Predetermined gas is exhausted via an exhaust port by a...
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7598503 |
Lithographic apparatus and cleaning method therefor
A lithographic apparatus is disclosed. The apparatus includes a source for supplying hydrogen radicals, a guide for use in conjunction with the source, for directing hydrogen radicals to an...
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7597816 |
Wafer bevel polymer removal
A method of forming a semiconductor device is provided. A wafer with a dielectric layer disposed under a photoresist mask is placed in an etch chamber. The dielectric layer is etched. The wafer is...
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7595005 |
Method and apparatus for ashing a substrate using carbon dioxide
A method and apparatus for removing residue, such as etch reside, from a substrate with substantially reduced damage to the substrate in a plasma processing system is described. A plasma ashing...
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7588693 |
Method of modifying an etched trench
A process for facilitating modification of an etched trench is provided. The process comprises: (a) providing a wafer comprising an etched trench, the trench having a photoresist plug at its base;...
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7585423 |
Liquid discharge head and producing method therefor
A liquid discharge head includes, on a same substrate, pressure generating chambers, nozzle apertures communicating with the pressure generating chambers through nozzle communicating pans, and a...
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7582220 |
Etching method
In an etching method for etching an etching target film formed on a substrate placed inside an airtight processing chamber 104 by inducing a processing gas into the processing chamber 104 , the...
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7578889 |
Methodology for cleaning of surface metal contamination from electrode assemblies
Systematic and effective methodology to clean capacitively coupled plasma reactor electrodes and reduce surface roughness so that the cleaned electrodes meet surface contamination specifications...
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7578946 |
Plasma processing system and plasma processing method
An object of the present invention is to provide a plasma processing system and a plasma processing method which use inductive coupled plasmas but do not cause disadvantages due to slant electric...
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7578944 |
Apparatus for generating gas plasma, gas composition for generating plasma and method for manufacturing semiconductor device using the same
A method for manufacturing a semiconductor device may include: forming a main magnetic field having an axis, and forming a subsidiary magnetic field substantially parallel to the axis; applying an...
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7578945 |
Method and apparatus for tuning a set of plasma processing steps
In a plasma processing system, a method of tuning of a set of plasma processing steps is disclosed. The method includes striking a first plasma comprising neutrals and ions in a plasma reactor of...
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7575692 |
Method for etching chromium thin film and method for producing photomask
An object to be processed has a chromium-based thin film made of a material containing chromium. The thin film is etched using a resist pattern as a mask. The thin film is etched by the use of a...
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7575855 |
Method of forming pattern
Disclosed is a method of forming a pattern. A first organic polymer layer is formed on a substrate on which an underlying layer, and then a second organic polymer layer, which has an opening...
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7572386 |
Method of treating a mask layer prior to performing an etching process
A method of pre-treating a mask layer prior to etching an underlying thin film is described. A thin film, such as a dielectric film, is etched using plasma that is enhanced with a ballistic...
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7569154 |
Plasma processing method, plasma processing apparatus and computer storage medium
A plasma processing method in which plasma can be ignited stably with a low radio frequency power and a low gas pressure even after long time operation by applying a DC voltage of −0.5 kV, for...
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7563722 |
Method of making a textured surface
A method of micro- and nanotexturing of various solid surfaces in plasma where carbon nanotubes are used as an etch mask. The method allows obtaining textures with feature sizes that can be...
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7560039 |
Methods of deep reactive ion etching
A method of substantially simultaneously forming at least two fluid supply slots through a thickness of semiconductor substrate from a first surface to a second surface thereof. The method includes...
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7556741 |
Method for producing a solar cell
A dry etching apparatus including a plate 15 provided in parallel or nearly parallel with an RF electrode 9 to cover a substrate 1 placed on the RF electrode 9 directly or through a tray ...
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7553378 |
Substrate cleaning apparatus and method
A substrate cleaning apparatus includes a chamber for accommodating a substrate; a mounting table, disposed in the chamber, for mounting thereon the substrate; an electrode disposed in the mounting...
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7553426 |
Apparatus, system, and method for increasing data storage density in patterned media
An apparatus, system, and method are disclosed for increasing data storage density in patterned media. One or more deposition sources may apply magnetic material to one or more recesses formed in a...
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7553427 |
Plasma etching of Cu-containing layers
A method and apparatus are provided for plasma etching of Cu-containing layers in semiconductor devices using an aluminum source in the presence of a halogen-containing plasma. The aluminum source...
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7552523 |
Method for manufacturing a perpendicular magnetic recording transducer
A method and system for manufacturing a perpendicular magnetic recording transducer by a process that includes plating is described. The method and system include forming a chemical mechanical...
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7550090 |
Oxygen plasma clean to remove carbon species deposited on a glass dome surface
A method for in-situ cleaning of a dielectric dome surface having been used in pre-clean processes is provided. Carbon containing deposits are removed by providing a plasma of one or more oxidizing...
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7546840 |
Method for cleaning reaction container and film deposition system
After semiconductor wafers are loaded into a reaction vessel, and ruthenium (Ru) film or ruthenium oxide film is formed, the interior of the reaction vessel is efficiently cleaned without...
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7547398 |
Self-aligned process for fabricating imprint templates containing variously etched features
A process that enables coplanarization of the structures that have been created in multiple independent etch steps. The various etches are performed independently by selectively exposing only...
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7547635 |
Process for etching dielectric films with improved resist and/or etch profile characteristics
A process of etching openings in a dielectric layer includes supporting a semiconductor substrate in a plasma etch reactor, the substrate having a dielectric layer and a patterned photoresist...
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7547636 |
Pulsed ultra-high aspect ratio dielectric etch
A method for selectively etching an ultra high aspect ratio feature dielectric layer through a carbon based mask in an etch chamber is provided. A flow of an etch gas is provided, comprising a...
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7541286 |
Method for manufacturing semiconductor device using KrF light source
A semiconductor device manufacturing method using a KrF light source is disclosed. Embodiments relate to a method for manufacturing a semiconductor device including forming an oxide film over a...
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7540971 |
Plasma etch process using polymerizing etch gases across a wafer surface and additional polymer managing or controlling gases in independently fed gas zones with time and spatial modulation of gas content
A plasma etch process etches high aspect ratio openings in a dielectric film on a workpiece in a reactor having a ceiling electrode overlying the workpiece and an electrostatic chuck supporting the...
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7541597 |
Automatic cleaning of ion sources
The invention relates to the automatic cleaning of ion sources inside mass spectrometers, especially the cleaning of ion sources where the ions are generated by matrix-assisted laser desorption...
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7541292 |
Plasma etch process with separately fed carbon-lean and carbon-rich polymerizing etch gases in independent inner and outer gas injection zones
A plasma etch process for etching high aspect ratio openings in a dielectric film on a workpiece is carried out in a reactor having a ceiling electrode overlying the workpiece and an electrostatic...
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