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5240550 Method of forming at least one groove in a substrate layer  
A groove is formed in a substrate layer by ion etching. The substrate layer comprises a top layer having an etch rate S1 and a bottom layer having a different etch rate S2, in which first, grooves...
5230770 Making method for high-density optical disk  
In a making method for a high-density optical disk, comprising the step of forming recording pits or recesses for forming the recording pits by etching through apertures of a photoresist layer, a...
5229256 Process for generating positive-tone photoresist image  
The present invention relates to a multistep process for generating a positive tone photoresist image with dry development.
5228052 Plasma ashing apparatus  
A plasma ashing apparatus has a vacuum treatment chamber for receiving therein a substrate coated with a resist film, a reactive gas introduction pipe equipped with a plasma applicator, a vacuum...
5227011 Method for producing a second harmonic wave generating device  
A method for producing a second harmonic wave generating device comprises the steps of: forming a LiTaO3 thin film adjusted to have an ordinary refractive index (noS1) of 2.00 to 2.20 at a...
5223109 Ion beam processing method and apparatus  
There is disclosed an ion beam processing method of processing a rotating workpiece for a very small-size rotary member, using an ion beam or a focused ion beam. Apparatus for performing this...
5221425 Method for reducing foreign matter on a wafer etched in a reactive ion etching process  
A system for reducing the concentration of foreign material on a wafer etched in a reactive ion etch chamber is disclosed. As a radio frequency voltage is applied within the etch chamber, the...
5217559 Apparatus and method for in-situ deep ultraviolet photon-assisted semiconductor wafer processing  
An in-situ deep-ultraviolet light generation module (126) for photon-assisted processing of semiconductor wafers (44) comprises a process environment space (152) for photochemical processing...
5215960 Method for manufacturing oxide superconducting devices  
In a method of manufacturing a superconducting device which has a first thin film of oxide superconductor material formed on a substrate and a second thin film formed on the first thin film of...
5213659 Combination usage of noble gases for dry etching semiconductor wafers  
A method of dry etching a layer on a semiconductor silicon substrate wafer within a reactor comprises: positioning a wafer within the reactor; injecting gases to within the reactor to provide a...
5212116 Method for forming planarized films by preferential etching of the center of a wafer  
A method of forming a planarized or smoothed dielectric or other material layer upon a partially fabricated integrated circuit is disclosed. Conventional planarization techniques involve...
5201991 Process for formation of capacitor  
A process for formation of a multi-stack type capacitor is disclosed, which comprises: steps of forming a polysilicon layer 5 on a source, forming a dielectric 5a, forming a layer 6, and forming a...
5200351 Method of fabricating field effect transistors having lightly doped drain regions  
A method of forming and removing spacers used to mask lightly doped drain (LDD) regions in the formation of a field effect transistor (FET) involves depositing a thin silicon nitride (Si3 N4)...
5200361 Process for preparing a semiconductor device using hydrogen fluoride and nitrogen to remove deposits  
A process for preparing a semiconductor device includes the steps of forming a lower wiring of aluminum or an aluminum alloy on a semiconductor substrate, coating said lower wiring with an...
5198072 Method and apparatus for detecting imminent end-point when etching dielectric layers in a plasma etch system  
A method for detecting imminent end-point when plasma etching a dielectric layer of a substrate by monitoring the D.C. bias voltage of the cathode during the etching process. The D.C. bias voltage...
5185293 Method of forming and aligning patterns in deposted overlaying on GaAs  
A method is described for forming patterns in deposited overlayers on GaAs and for aligning the formed patterns with etch features produced through dry processing. The deposited overlayers on GaAs...
5180466 Process for dry etching a silicon nitride layer  
A silicon nitride layer, particularly on a silicon dioxide layer, is dry etched successfully by using an etching gas including SF6, preferably also CH2 F2. This dry etching provides a high...
5178658 Method for forming an optical waveguide by selective volatization  
A method of forming an optical waveguide which includes the steps of forming on a substrate a waveguide layer including at least one host medium and one dopant medium, one of which is more...
5176782 Apparatus for photochemically ashing a photoresist  
An apparatus for photochemically decomposing a photoresist is disclosed wherein processing time can be minimized by inducing a uniform photochemical oxidative decomposing reaction over the whole...
5174857 Slope etching process  
A slope etching process comprising the steps of coating a photoresist on a layer of hard material, baking the photoresist under a predetermined condition so that it flows down to have at its...
5162144 Process for metallizing substrates using starved-reaction metal-oxide reduction  
A unique process metallizes a substrate surface using a reducing agent including a borohydride to reduce, in a starved reaction, metal oxide particles (300) substantially uniformly distributed and...
5152868 Elastomer connector for integrated circuits or similar, and method of manufacturing same  
An elastomer connector is disclosed for integrated circuits or similar, comprising an elastomer material support on one face of which is formed a dense network of electro-conducting lines. Using...
5147465 Method of cleaning a surface  
A method of cleaning a surface including generating helium ions, electrons, and metastable helium by exciting helium gas, separating said metastable helium from the helium ions and electrons, and...
5145555 Method of manufacturing a magnetic head  
A method of manufacturing a magnetic head including the steps of forming a plurality of almost V-shaped parallel grooves in a surface of a substrate; forming a soft magnetic thin film larger in...
5140164 IC modification with focused ion beam system  
Apparatus is provided which includes a FIB column having a vacuum chamber for receiving an IC, means for applying a FIB to the IC, means for detecting secondary charged particles emitted as the...
5129991 Photoelectron-induced selective etch process  
The relative photoemission threshold properties of conductive materials are used as a basis for selectively etching conductive materials in the presence of other conductive materials. An...
5116461 Method for fabricating an angled diffraction grating  
A method for fabricating an angled diffraction grating (12) is provided. An optical medium (13) with fine lines and spaces that are defined in an etch mask is provided. Transferring the defined...
5112645 Phototreating method and apparatus therefor  
A phototreating method comprises the steps of introducing a photoreactive gas into a chamber housing a workpiece, emitting first light substantially perpendicularly to a surface of the workpiece,...
5110712 Incorporation of dielectric layers in a semiconductor  
A system for integrating a composite dielectric layer in an integrated circuit to facilitate fabrication of a high density multi-level interconnect with external contacts. The composite dielectric...
5110394 Apparatus for forming interconnection pattern  
Disclosed is a method of forming an interconnection pattern which causes no disconnection even when making contact with water in the atmosphere. An interconnection layer is formed on a...
5110438 Reduced pressure surface treatment apparatus  
The reduced pressure surface treatment apparatus according the present invention comprises at least one vacuum chamber and an exhaust unit and a gas supply unit connected thereto, and it is...
5108543 Method of surface treatment  
Surface treatment is applied to a substrate by supplying thereto excited molecules in which the vibrational energy level is excited. SF6, O2, N2, etc., are used as the excited molecules and...
5106455 Method and apparatus for fabrication of micro-structures using non-planar, exposure beam lithography  
Apparatus for non-planar treatment of a workpiece utilizing exposure beam lithography includes a vacuum chamber, an exposure beam generator such as an electron beam generator disposed in the...
5106471 Reactive ion etch process for surface acoustic wave (SAW) device fabrication  
A dry etch process allows fabrication of very small SAW electrodes (less than 1 micron wide) on LiNbO3 (lithium niobate) or quartz substrates. In the process, analuminum (Al) layer is disposed on...
5104684 Ion beam induced deposition of metals  
Metal is deposited in lines of submicron width by scanning a focused ion beam along a substrate in the presence a vapor of a precursor platinum compound. High deposition rates and steep walls may...
5100499 Copper dry etch process using organic and amine radicals  
An etch process for etching copper layers that is useable in integrated circuit fabrication is disclosed which utilizes organic and amine radicals to react with copper, preferrable using...
5097430 Method and apparatus for displaying process end point signal based on emission concentration within a processing chamber  
A method facilitates the display of a filtered signal which represents the variation of light intensity in a processing chamber over time. The filtered signal filters out the effects of a magnetic...
5085957 Method of repairing a mask  
A mask repair method in which a transparent defect of in a phase shifter pattern is repaired by ion beam etching instead of a shifter pattern film deposition. A portion of the mask substrate below...
5069748 Method for forming refractory resistors with etch stop for superconductor integrated circuits  
This is a structure of, and method for preparation of, molybdenum resistors in a superconductor integrated circuit. It utilizes a pattern superconductor film; applying a titanium film on the...
5057186 Method of taper-etching with photoresist adhesion layer  
In a two-step etching process for making tapered contact openings in a dieletric, a thin layer of a material is interposed to serve as an adhesive between the dielectric and a photoresist layer...
5043294 Method for manufacturing an FET with asymmetrical gate region  
A method for manufacturing a field effect transistor having source and drain regions asymmetrically arranged relative to the gate region. A strip-shaped auxiliary layer is applied in the region of...
5037767 Method of manufacturing a semiconductor device by ion implantation through an ion-sensitive resist  
In the manufacture of a semiconductor device, e.g. a bipolar or MOS transistor, a narrow beam (4) of ions is deflected across a major surface of a semiconductor device body (1,2) to implant ions,...
5034091 Method of forming an electrical via structure  
A via (26) is formed through a dielectric layer (8) separating two conductive layers (16,28) by establishing a laterally erodible mask (18) over the dielectric (8), with a window (24) over the...
5034089 Method of manufacturing a multi-turn multi-track composite recording head  
This method of manufacturing a multi-turn multi-track composite recording head increases the cross sectional area of the conductors used to implement the windings in the recording head. This is...
5030583 Method of making single crystal semiconductor substrate articles and semiconductor device  
A textured substrate is disclosed which is amenable to deposition thereon of epitaxial single crystal films of materials such as diamond, cubic boron nitride, boron phosphide, beta-silicon...
5009743 Chemically-assisted ion beam milling system for the preparation of transmission electron microscope specimens  
An ion beam milling system for the preparation of transmission electron microscope specimens suitable for atomic resolution imaging, particularly of III-V and II-VI compound semiconductors and...
5004673 Method of manufacturing surface relief patterns of variable cross-sectional geometry  
A method of manufacturing surface relief patterns of variable depth in solid materials is disclosed, which patterns, when seen in cross-section, are of variable geometry. After determining the...
5000820 Methods and apparatus for etching mercury cadmium telluride  
A workpiece (W) is placed within a reaction chamber (12). The chamber (12) is evacuated (18) to a relatively low pressure such as 10 torr. An organic or nitrogen-based free radical precursor...
4992901 Self aligned magnetic poles using sacrificial mask  
In a method of manufacturing a thin film magnetic head having aligned top and bottom pole tip pieces, a sacrificial mask protects the upper pole tip while the exposed non-aligned portions of the...
4981816 MO/TI Contact to silicon  
A metal for fabricating contact structures through via openings in VLSI circuits employs a dual layer of refractory metal. A thin titanium layer is deposited, over which a molybdenum layer is...