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8182708 |
Method of finishing pre-polished glass substrate surface
The present invention is to provide a method by which the waviness generated in a glass substrate surface during pre-polishing are removed and the glass substrate is finished so as to have a highly...
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8175736 |
Method and system for performing a chemical oxide removal process
A processing system and method for chemical oxide removal (COR) is presented, wherein the processing system comprises a first treatment chamber and a second treatment chamber, wherein the first and...
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8158526 |
Endpoint detection for photomask etching
Apparatus and method for endpoint detection are provided for photomask etching. The apparatus provides a plasma etch chamber with a substrate support member. The substrate support member has at...
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8158016 |
Methods of operating an electromagnet of an ion source
Methods of operating an electromagnet of an ion source for generating an ion beam with a controllable ion current density distribution. The methods may include generating plasma in a discharge...
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8158017 |
Detection of arcing events in wafer plasma processing through monitoring of trace gas concentrations
A method of detecting substrate arcing in a semiconductor plasma processing apparatus is provided. A substrate is placed on a substrate support in a reaction chamber of a plasma processing...
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8158015 |
Fitting methodology of etching times determination for a mask to provide critical dimension and phase control
The present disclosure provides a mask and a method of determining etching times for etching the mask. In one embodiment, values for a main etching time and an over-etching time are determined...
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8147705 |
Method of operating ion source and ion implanting apparatus
When an ion beam 4 is to be extracted from an ion source 2 by using a gas containing boron trifluoride as an ion source gas 50 for supplying the gas into a plasma chamber 20 for the ion source 2, a...
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8137574 |
Processing method of glass substrate, and highly flat and highly smooth glass substrate
The present invention is to provide a processing method for manufacturing a highly flat and highly smooth glass substrate with good productivity. A highly flat and highly smooth glass substrate is...
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8133402 |
Pattern forming method, charged particle beam writing apparatus, and recording medium on which program is recorded
A pattern forming method includes performing a first resist development during a first time period to a substrate obtained by coating a resist film having a predetermined thickness onto a...
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8129283 |
Plasma processing method and plasma processing apparatus
The invention provides a plasma processing apparatus and a dry etching method for etching a multilayered film structure having steps with high accuracy. The plasma processing apparatus comprises a...
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8105499 |
Transmission electron microscopy sample etching fixture
A mask fixture for etching an item includes: a top fixture disposed over the item, including a reservoir centered within the top fixture for containing an etchant; a bottom fixture underneath the...
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8083961 |
Method and system for controlling the uniformity of a ballistic electron beam by RF modulation
A method and system for treating a substrate using a ballistic electron beam is described, whereby the radial uniformity of the electron beam flux is adjusted by modulating the source radio...
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8080168 |
Confinement ring drive
A confinement assembly for a semiconductor processing chamber is provided. The confinement assembly includes a plurality of confinement rings disposed over each other. Each of the plurality of...
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8075698 |
Substrate processing unit, method of detecting end point of cleaning of substrate processing unit, and method of detecting end point of substrate processing
A substrate processing unit comprises a processing vessel for receiving a substrate, a cleaning gas supply system for supplying cleaning gas to the processing vessel so as to clean the interior of...
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8073646 |
Plasma processing apparatus, radio frequency generator and correction method therefor
A plasma processing apparatus includes a radio frequency generator capable of adjusting a target output power level based on the set power level and the offset level to output radio frequency...
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8052886 |
Plasma etching method and apparatus therefor
A fluorine-containing compound gas, e.g., SF6 gas, is converted into a plasma and a silicon portion of an object to be processed is etched by the plasma. At the same time, using a light source...
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8048806 |
Methods to avoid unstable plasma states during a process transition
In some implementations, a method is provided in a plasma processing chamber for stabilizing etch-rate distributions during a process transition from one process step to another process step. The...
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8048327 |
Plasma processing apparatus and control method thereof
In a plasma processing apparatus for processing an object to be processed by generating plasma in a processing chamber: a first electrode is arranged in the processing chamber and a second...
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8038897 |
Method and system for wafer inspection
A method for inspecting semiconductor wafers patterned by a photomask includes loading a first wafer and scanning a first image of the first wafer, loading a second wafer and scanning a second...
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8038896 |
Plasma processing method and apparatus
Plasma processing of plural substrates is performed in a plasma processing apparatus, which is provided with a plasma processing chamber having an antenna electrode and a lower electrode for...
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8038892 |
Method and device for strip and flat-shaping machining surfaces of glass panes
The removal of partial areas of a coating (11, 12) on at least one surface (37, 38) of a glass pane (2) takes place by means of a plasma jet (14, 15) which emerges from a plasma nozzle (5, 6). The...
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8021564 |
Method for detecting an end point of resist peeling, method and apparatus for peeling resist, and computer-readable storage medium
A method for detecting an end point of a resist peeling process in which a resist is gasified to be peeled off by producing hydrogen radicals by catalytic cracking reaction where a...
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8021566 |
Method for pre-conditioning CMP polishing pad
An apparatus and method suitable for the pre-conditioning of a polishing pad on a CMP apparatus prior to the polishing of production wafers on the apparatus. The apparatus includes a...
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8021563 |
Etch depth determination for SGT technology
A method for determining the depth etch, a method of forming a shielded gate trench (SGT) structure and a semiconductor device wafer are disclosed. A material layer is formed over part of a...
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8017029 |
Plasma mask etch method of controlling a reactor tunable element in accordance with the output of an array of optical sensors viewing the mask backside
A plasma etch method includes simultaneously illuminating an array of plural locations on front surface of the workpiece through the backside of the workpiece with light of a wavelength range for...
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8012366 |
Process for etching a transparent workpiece including backside endpoint detection steps
A method is provided for defining a pattern on a workpiece such as a transparent substrate or mask or a workpiece that is at least transparent within a range of optical wavelengths. The method...
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7981305 |
High-density field emission elements and a method for forming said emission elements
A method for forming high density emission elements and field emission displays formed according to the method. Oxygen and a silicon etchant are introduced into a plasma etching chamber containing...
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7981306 |
Supplying RF power to a plasma process
Generating drive signals of at least two RF power generators which supply RF power to a plasma process, in which at least two drive signals, each driving one RF power generator, are generated in an...
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7967995 |
Multi-layer/multi-input/multi-output (MLMIMO) models and method for using
The invention provides a method of processing a substrate using multilayer processing sequences and Multi-Layer/Multi-Input/Multi-Output (MLMIMO) models and libraries that can include one or more...
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7959819 |
Method and apparatus for reducing aspect ratio dependent etching in time division multiplexed etch processes
The present invention provides a method and an apparatus for reducing aspect ratio dependent etching that is observed when plasma etching deep trenches in a semiconductor substrate through an...
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7922925 |
Method and device for removing layers in some areas of glass plates
Substrates with a coating, in particular a metal-containing coating, are freed of coating in some regions, in particular in the edge region, with the aid of plasma directed onto the coated side of...
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7910013 |
Method of controlling a chamber based upon predetermined concurrent behavior of selected plasma parameters as a function of source power, bias power and chamber pressure
For each one of plural plasma parameters, such as ion density, wafer voltage, etch rate, wafer current, a relevant surface of constant value is fetched from a memory. The relevant surface of...
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7901952 |
Plasma reactor control by translating desired values of M plasma parameters to values of N chamber parameters
The invention concerns a method of processing a wafer in a plasma reactor chamber by controlling plural chamber parameters in accordance with desired values of plural plasma parameters. The method...
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7897058 |
Device manufacturing method and computer program product
A method of forming features, e.g. contact holes, at a higher density than is possible with conventional lithographic techniques involves forming an array of sacrificial positive features,...
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7892980 |
Apparatus and a method for controlling the depth of etching during alternating plasma etching of semiconductor substrates
The present invention provides apparatus for controlling the operation of plasma etching a semiconductor substrate by an alternating etching method, the apparatus comprising: a process chamber (1)...
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7892444 |
Plasma processing apparatus and method for controlling the same
A method for controlling a plasma processing apparatus which includes a vacuum vessel, a first, second and third RF power supply, a first and second electrode, and a phase control unit for...
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7892442 |
Method of manufacturing a thin-film magnetic head, thin-film magnetic head manufacturing apparatus, and thin-film magnetic head manufacturing system
A method of manufacturing a thin-film magnetic head works a part to be worked to a target length by carrying out an etching process on an object to be worked using an etching apparatus. The method...
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7883630 |
FIB milling of copper over organic dielectrics
Apparatus and processes are disclosed for milling copper adjacent to organic low-k dielectric on a substrate by directing a charged-particle beam at a portion of the copper and exposing the copper...
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7883629 |
Technique for patterning differently stressed layers formed above transistors by enhanced etch control strategies
During the patterning of stressed layers having different types of intrinsic stress, the effects of the deposition of a silicon dioxide based etch indicator material between the first and second...
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7877161 |
Method and system for performing a chemical oxide removal process
A processing system and method for chemical oxide removal (COR) is presented, wherein the processing system comprises a first treatment chamber and a second treatment chamber, wherein the first and...
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7875198 |
Method of deriving etching correction values for patterns of photomask and method of fabricating photomask
A method of deriving etching correction values for the patterns of a photomask and a method of fabricating a photomask are described. The former method includes the following steps. The layout data...
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7871830 |
End point detection method for plasma etching of semiconductor wafers with low exposed area
A method for controlling the plasma etching of semiconductor wafers determines the impedance of a plasma chamber using values representing voltage, current, and the phase angle between them, as...
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7867409 |
Control of ion angular distribution function at wafer surface
A manufacturing method and apparatus for IC fabrication controls the ion angular distribution at the surface of a wafer with electrodes in a wafer support that produce electric fields parallel to...
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7848898 |
Method for monitoring process drift using plasma characteristics
Methods for monitoring process drift using plasma characteristics are provided. In one embodiment, a method for monitoring process drift using plasma characteristics includes obtaining metrics of...
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7842189 |
Treatment device, treatment device consumable parts management method, treatment system, and treatment system consumable parts management method
A processing apparatus includes counters each used to measure the length of RF discharge time over which power is applied to a consumable component in correspondence to a specific type of...
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7833427 |
Electron beam etching device and method
Methods and devices for selective etching in a semiconductor process are shown. Chemical species generated in a reaction chamber provide both a selective etching function and concurrently form a...
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7833388 |
End point detection for direct ion milling to induce magnetic anisotropy in a magnetic layer
A method for manufacturing a magnetic layer with a magnetic anisotropy. The method includes an endpoint detection process for determining an end point to carefully control the final thickness of...
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7829468 |
Method and apparatus to detect fault conditions of plasma processing reactor
A method of fault detection for use in a plasma processing chamber is provided. The method comprises monitoring plasma parameters within a plasma chamber with a single planar ion flux (PIF) probe,...
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7815813 |
End point detection method, end point detection device, and gas phase reaction processing apparatus equipped with end point detection device
An end point detection method in the case where a catalyst arranged in a treatment chamber of a gas phase reaction processing apparatus is heated at high temperature by supplying electric power...
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7815812 |
Method for controlling a process for fabricating integrated devices
A method for controlling a process for fabricating integrated devices on a substrate. The method includes ex-situ and in-situ measurements of pre-etch and post-etch dimensions for structures formed...
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