|
Match
|
Document |
Document Title |
|
|
7413639 |
Energy and media connection for a coating installation comprising several chambers
The invention relates to an energy and media connection module for coating installations. Said module serves for supplying with cooling water, compressed air, process gases, signal, control and...
|
|
|
7316764 |
System and method for performing sputter etching using independent ion and electron sources and a substrate biased with an a-symmetric bi-polar DC pulse signal
A system and method for performing sputter etching includes an ion source that generates an ion current that is directed at a substrate and an electron source that generates an electron current...
|
|
|
7294283 |
Penning discharge plasma source
The preferred embodiments described herein provide a Penning discharge plasma source. The magnetic and electric field arrangement, similar to a Penning discharge, effectively traps the electron...
|
|
|
7288173 |
Ion beam processing system and ion beam processing method
An ion beam processing system emitting an ion beam at a workpiece to process the workpiece, provided with an electrode for applying an electric field to the workpiece, the potential of the...
|
|
|
7276140 |
Plasma accelerating apparatus for semiconductor substrate processing and plasma processing system having the same
A plasma accelerating apparatus and a plasma processing system having the same are provided. The apparatus includes a circular channel comprising an inner wall, an outer wall, and an end wall...
|
|
|
7256134 |
Selective etching of carbon-doped low-k dielectrics
The present invention includes a process for selectively etching a low-k dielectric material formed on a substrate using a plasma of a gas mixture in a plasma etch chamber. The gas mixture...
|
|
|
7104217 |
Plasma processing apparatus
The present invention provides a plasma processing apparatus having an electrode plate arranging therein, an upper electrode to which a dielectric member or a cavity portion is provided, a...
|
|
|
7084369 |
Harmonic multiplexer
A method and apparatus for maintaining a plasma in a plasma region, by supplying RF power at a fundamental frequency to the plasma region together with a gas in order to create an RF...
|
|
|
6991701 |
Plasma treatment method and apparatus
A plasma treatment method comprising exhausting a process chamber so as to decompress the process chamber, mounting a wafer on a suscepter, supplying a process gas to the wafer through a shower...
|
|
|
6951821 |
Processing system and method for chemically treating a substrate
A processing system and method for chemically treating a substrate, wherein the processing system comprises a temperature controlled chemical treatment chamber, and an independently temperature...
|
|
|
6949174 |
Milling apparatus
A milling apparatus is provided in which temperature rise of a treatment-object in milling treatment, especially of the substrate thereof, is prevented. In the apparatus, ionization mechanism 2 ...
|
|
|
6896775 |
High-power pulsed magnetically enhanced plasma processing
Magnetically enhanced plasma processing methods and apparatus are described. A magnetically enhanced plasma processing apparatus according to the present invention includes an anode and a cathode...
|
|
|
6887317 |
Reduced friction lift pin
A substrate support is provided that features a lift pin having at least one larger diameter shoulder section that forms a relief region between the lift pin and a guide hole disposed through a...
|
|
|
6777881 |
Power supply apparatus for generating plasma
A power supply apparatus for generating a plasma for supplying a high-frequency power to a plasma generating device which is a load. The power supply apparatus comprises: a DC power supply; a power...
|
|
|
6773558 |
Fluorine generator
A fluorine generator includes a vacuum chamber filled with a working gas. An r-f antenna is positioned outside the chamber across a dielectric window from a potassium fluoride (KF) source located...
|
|
|
6756737 |
Plasma processing apparatus and method
The main purpose of the present invention is to suppress deposition of byproducts on an inner wall of a vacuum chamber during wafer processing using plasma generated by an inductive coupling...
|
|
|
6740207 |
Electric supply unit and method for reducing arcing during sputtering
Sparking is suppressed during high-frequency sputtering by a high-frequency generator ( 5 ) which has a controlled switching unit ( 13 ) that is connected upstream in relation to the output of the...
|
|
|
6736931 |
Inductively coupled RF plasma reactor and plasma chamber enclosure structure therefor
A plasma chamber enclosure structure for use in an RF plasma reactor. The plasma chamber enclosure structure being a single-wall dielectric enclosure structure of an inverted cup-shape...
|
|
|
6679981 |
Inductive plasma loop enhancing magnetron sputtering
A plasma reaction chamber, particularly a DC magnetron sputter reactor, in which the plasma density and the ionization fraction of the plasma is increased by a plasma inductive loop passing through...
|
|
|
6631336 |
Nondestructive method of quality control of high-voltage systems and device for use of the method
A method and device applicable to HV generators and X-ray tubes, and a computer program and support for the program. In the method a determination is made of a scale of values representing the...
|
|
|
6562190 |
System, apparatus, and method for processing wafer using single frequency RF power in plasma processing chamber
The present invention provides a system, apparatus, and method for processing a wafer using a single frequency RF power in a plasma processing chamber. The plasma processing system includes a...
|
|
|
6554979 |
Method and apparatus for bias deposition in a modulating electric field
The present invention provides a method and apparatus for achieving conformal step coverage of one or more materials on a substrate using sputtered ionized material. In one embodiment, a chamber...
|
|
|
6511575 |
Treatment apparatus and method utilizing negative hydrogen ion
In order to eliminate a contact hole of a semiconductor substrate, a polymer dreg after ashing of all inside of a via hole is conducted, or an oxide layer on a barrier metal surface, hydrogen gas...
|
|
|
6436253 |
Sputter etching chamber with improved uniformity
The uniformity of material removal, as well as contamination due to deposited particulate matter, has been reduced in single wafer sputter-etchers by providing an improved gas baffle. Said gas...
|
|
|
6432260 |
Inductively coupled ring-plasma source apparatus for processing gases and materials and method thereof
There is provided by this invention a novel inductively coupled plasma source apparatus that utilizes a transformer to induce closed path secondary plasma currents in a hollow metal housing that is...
|
|
|
6422172 |
Plasma processing apparatus and plasma processing method
A plasma processing apparatus has plasma generating means including a means for generating capacitive coupled discharge and a means for radiating electromagnetic waves, so that the energy state of...
|
|
|
6395157 |
Method and apparatus for sputter etch conditioning a ceramic body
A method and apparatus for conditioning a surface of a ceramic body in a process chamber when the process chamber has a vacuum pump, an anode and a cathode. The conditioning method consists of...
|
|
|
6390020 |
Dual face shower head magnetron, plasma generating apparatus and method of coating substrate
An electrode is provided which can improve the efficiency and quality of plasma-generated coatings in a plasma enhanced chemical vapor deposition coating device. The electrode comprises dual shower...
|
|
|
6375860 |
Controlled potential plasma source
The occurrence of internally-formed contaminants or negatively-charged particulates within a plasma is minimized by preventing such from becoming trapped in the plasma. The plasma is formed in a...
|
|
|
6364958 |
Plasma assisted semiconductor substrate processing chamber having a plurality of ground path bridges
A plasma assisted semiconductor substrate processing chamber having a plurality of electrically conductive bridges for preventing electrical arcing in the chamber. More particularly, the chamber...
|
|
|
6361645 |
Method and device for compensating wafer bias in a plasma processing chamber
Disclosed is a method and device for compensating a bias voltage on a wafer disposed over an electrostatic chuck in a processing chamber of a plasma processing system. The plasma processing system...
|
|
|
6312569 |
Chemical vapor deposition apparatus and cleaning method thereof
A chemical vapor deposition apparatus for depositing a thin film of highly dielectric materials for giga-capacity memory devices can reliably clean reaction products formed within the deposition...
|
|
|
6280563 |
Plasma device including a powered non-magnetic metal member between a plasma AC excitation source and the plasma
A plasma processor for a workpiece includes a coil for supplying an r.f. exciting field through a window to a plasma in a vacuum chamber. A powered non-magnetic metal member between the coil and...
|
|
|
6254746 |
Recessed coil for generating a plasma
A recessed coil for a plasma chamber in a semiconductor fabrication system is provided. Recessing the coil reduces deposition of material onto the coil which in turn leads to a reduction in...
|
|
|
6254737 |
Active shield for generating a plasma for sputtering
A combination coil and shield for a plasma chamber in a semiconductor fabrication system is provided. The coil-shield has a plurality of turns to couple energy efficiently into a plasma and also...
|
|
|
6254738 |
Use of variable impedance having rotating core to control coil sputter distribution
Variable reactances in an impedance-matching box for an RF coil, in a plasma deposition system for depositing a film of sputtered target material on a substrate, can be varied by rotating inductor...
|
|
|
6251241 |
Inductive-coupled plasma apparatus employing shield and method for manufacturing the shield
An inductive-coupled plasma apparatus employs a shield to reduce sputter contamination. A method for manufacturing the shield is included. An apparatus for generating a high-density plasma includes...
|
|
|
6248251 |
Apparatus and method for electrostatically shielding an inductively coupled RF plasma source and facilitating ignition of a plasma
A plasma etch apparatus (10) such as that for etching wafers in the manufacture of semiconductors includes a vacuum chamber (15) surrounded by a cylindrical dielectric wall (13). A coil (20)...
|
|
|
6239403 |
Power segmented electrode
A power segmented electrode useful as part of an upper electrode and/or substrate support for supporting a substrate such as a semiconductor wafer in a plasma reaction chamber such as a single...
|
|
|
6235169 |
Modulated power for ionized metal plasma deposition
In a plasma generating apparatus, RF energy applied to a coil positioned to sputter material onto a workpiece, is modulated to control the biasing of the coil. As a consequence, control of coil...
|
|
|
6231727 |
Process for stripping the surface of a substrate and apparatus for implementing this process
Process for continuously stripping the surface of a substrate moving in a defined direction through a vacuum chamber past at least one counterelectrode, according to which process a plasma is...
|
|
|
6228429 |
Methods and apparatus for processing insulating substrates
A disk gripper for gripping an insulating disk, such as a glass disk, at its edge during processing includes a contact device for contacting the edge of the insulating disk and a mechanism for...
|
|
|
6220204 |
Film deposition method for forming copper film
A film deposition apparatus to which the present invention is applied comprises a vacuum chamber 11, a plasma beam generator 13, a main hearth 30 which is disposed within the vacuum chamber and...
|
|
|
6176982 |
Method of applying a coating to a metallic article and an apparatus for applying a coating to a metallic article
A method of applying a coating to a metallic article (10) comprises placing the metallic article within a hollow cathode (38) in a vacuum chamber (30), evacuating the vacuum chamber (30), applying...
|
|
|
6143144 |
Method for etch rate enhancement by background oxygen control in a soft etch system
The invention for etching a substrate containing an oxide layer reduces activated oxygen within the plasma and maintains a high soft etch rate in a series of subsequent etches. In one aspect of the...
|
|
|
6132551 |
Inductive RF plasma reactor with overhead coil and conductive laminated RF window beneath the overhead coil
The invention is embodied in an inductively coupled plasma reactor having a conductive enclosure defining a reactor chamber interior, the enclosure including a conductive layer, and an inductive...
|
|
|
6106683 |
Grazing angle plasma polisher (GAPP)
A device and method for polishing the surface of a substrate uses a vessel for holding a plasma in a magnetic field. Further, the magnetic field is selectively oriented in the vessel relative to...
|
|
|
6103070 |
Powered shield source for high density plasma
An insulative inter-turn shield positioned at the channel in coil windings to confine the plasma generated by energy radiated by the coil windings in an apparatus for sputtering material onto a...
|
|
|
6092486 |
Plasma processing apparatus and plasma processing method
The plasma processing apparatus and plasma processing method of the present invention are suitable for the application of plasma processing to etching, ashing, CVD, etc. in the manufacturing of...
|
|
|
6066241 |
Pickling (etching) process and device
Process and device for continuously pickling at least one of the sides of a substrate (1), according to which this substrate (1) is moved according a predetermined direction between an anode (8),...
|