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7244344 Physical vapor deposition plasma reactor with VHF source power applied through the workpiece  
A physical vapor deposition plasma reactor includes a vacuum chamber including a sidewall, a ceiling and a wafer support pedestal near a floor of the chamber, and a vacuum pump coupled to the...
7244343 Sputtering apparatus  
A sputtering apparatus is provided with a DC power supply 1 , an inverter 2 that converts DC voltage to AC voltage, a matching circuit 10 that transforms the AC voltage, a rectifier 4 that...
7211179 Dual anode AC supply for continuous deposition of a cathode material  
There is provided by this invention an apparatus for sputter deposition of an insulating material in a continuous mode of operation that utilizes at least two sputtering anodes and a cathode...
7182842 Device for amplifying the current of an abnormal electrical discharge and system for using an abnormal electrical discharge comprising one such device  
A device ( 1 ) for amplifying the current of an abnormal electrical discharge, characterized in that it comprises an electrode which is positively polarized ( 2 ) and associated with a magnetic...
7179350 Reactive sputtering of silicon nitride films by RF supported DC magnetron  
An asymmetric alternating voltage (preferably 40 KHz) is provided between a pair of targets having a coaxial (preferably frusto-conical) relationship to (1) deposit the material in a uniform...
7156960 Method and device for continuous cold plasma deposition of metal coatings  
A method for the deposition of a metal layer on a substrate ( 1 ) uses a cold plasma inside an enclosure ( 7 ) heated to avoid the formation of a metal deposit at its surface. The enclosure has an...
7147759 High-power pulsed magnetron sputtering  
Magnetically enhanced sputtering methods and apparatus are described. A magnetically enhanced sputtering source according to the present invention includes an anode and a cathode assembly having a...
7094316 Externally excited torroidal plasma source  
A plasma reactor for processing a workpiece, including an enclosure defining a vacuum chamber, a workpiece support within the enclosure facing an overlying portion of the enclosure, the enclosure...
7041202 Timing apparatus and method to selectively bias during sputtering  
A system and method for sputtering using a plurality of different bias voltages, a plurality of target-cathodes that can be powered at different voltages disposed along said path of travel, and a...
7041201 Sidewall magnet improving uniformity of inductively coupled plasma and shields used therewith  
One aspect of the invention includes an auxiliary magnet ring positioned outside of the chamber wall of a plasma sputter reactor and being disposed at least partially radially outwardly of an RF...
7012263 Ion source apparatus and electronic energy optimized method therefor  
The ion source apparatus of the present invention includes at least one pair of antenna-opposed magnets sandwiching an antenna element and moveable to magnetic element and the antenna element both...
7011733 Method and apparatus for depositing films  
In a sputtering apparatus, target particles to be deposited onto a substrate are selectively ionized relative to other particles in the deposition chamber. For example, titanium or...
6972079 Dual magnetron sputtering apparatus utilizing control means for delivering balanced power  
There is disclosed a dual magnetron sputtering apparatus that is comprised of a balancing circuit connected to the output of an ac power source that supplies ac power to at least two target...
6964731 Soil-resistant coating for glass surfaces  
A glass article which has a water-sheeting coating and a method of applying coatings to opposed sides of a substrate are described. In one embodiment, a glass sheet is provided bearing a sputtered...
6962648 Back-biased face target sputtering  
A facing targets sputtering device for semiconductor fabrication includes an air-tight chamber in which an inert gas is admittable and exhaustible; a pair of target plates placed at opposite ends...
6946063 Deterioration resistant chambers for inductively coupled plasma production  
In one aspect of the invention is a method to construct plasma chambers with improved wall resistance to deterioration. In one embodiment of the invention, a chamber is made of an aluminum alloy...
6936144 High frequency plasma source  
A high frequency plasma source includes a support element, on which a magnetic field coil arrangement, a gas distribution system and a unit for extraction of a plasma beam are arranged....
6929725 Sputter ions source  
A sputter ion source includes an ionizer; a sputter cathode, including a cathode, a sputter insert, and a shielding cap; a forming electrode; cathode insulator; a hollow, cylindrical shielding...
6929720 Sputtering source for ionized physical vapor deposition of metals  
A plasma processing system is provided with a cylindrical target, open at both ends, and with a magnet array that forms a hollow cathode magnetron (HCM). At one of the open ends is placed an...
6923891 Copper interconnects  
A method for forming a conductive region on a first portion of a substrate, the method being constituted by exposing the first portion to a filtered beam of substantially fully ionised metallic...
6911123 Facing-targets-type sputtering apparatus and method  
Disclosed is a facing-targets-type sputtering apparatus and method capable of forming a metal film under the conditions of low gas pressure and low discharge voltage. An opening is formed in each...
6899799 Method and apparatus for improving sidewall coverage during sputtering in a chamber having an inductively coupled plasma  
Increased sidewall coverage by a sputtered material is achieved by generating an ionizing plasma in a relatively low pressure sputtering gas. By reducing the pressure of the sputtering gas, it is...
6896773 High deposition rate sputtering  
Methods and apparatus for high-deposition sputtering are described. A sputtering source includes an anode and a cathode assembly that is positioned adjacent to the anode. The cathode assembly...
6878249 High frequency sputtering device  
The stray capacitance between the target and grounding member and the loss of high frequency electric current are reduced by arranging dielectric members and metal members with a particular...
6878248 Method of manufacturing an object in a vacuum recipient  
A method of manufacturing an object in a vacuum treatment apparatus having a vacuum recipient for containing an atmosphere, includes the steps of supporting a substrate on a work piece carrier...
6863785 Sputtering apparatus and sputter film deposition method  
A sputtering apparatus and a sputter film deposition method, which includes a conventional magnetron and an AC magnetron for deposition of a low refractive index film, and a conventional magnetron...
6843892 Apparatus and method for selectively and controllably electrically biasing a plurality of substrates on a pallet  
An in-line, multi-station apparatus including an improved pallet for transporting a plurality of workpieces/substrates through the apparatus, the pallet comprising: (a) a sheet of...
6827824 Enhanced collimated deposition  
An apparatus for film deposition onto a substrate from a source of target particles including a plasma generator creating a plasma that isotropically accelerates the target particles towards the...
6824658 Partial turn coil for generating a plasma  
A partial turn coil disposed in a semiconductor fabrication chamber for generating a plasma and sputter depositing coil material onto a substrate can exhibit reduced RF voltages.
6824653 Magnetron with controlled DC power  
A magnetron with mechanisms for smoothly and continuously adjusting a DC power applied to its targets to compensate for the changes in the sputtering characteristics of the targets that occur with...
6818103 Method and apparatus for substrate biasing in multiple electrode sputtering systems  
A method and an apparatus are disclosed for causing ion bombardment of the substrate during sputter deposition of an insulating or conducting material on a substrate ( 3 ) when using dual cathode...
6814838 Vacuum treatment chamber and method for treating surfaces  
The invention relates to a vacuum treatment chamber for work pieces which comprises at least one induction coil for at least co-generating a treatment plasma in a discharge chamber which is located...
6808607 High peak power plasma pulsed supply with arc handling  
There is provided by this invention novel magnetron sputtering apparatus that is generally comprised of a pulsed dc power supply capable of delivering peak powers of 0.1 megaWatts to several...
6806653 Method and structure to segment RF coupling to silicon electrode  
An electrode assembly for use in a plasma processing system including a base electrode adapted to be coupled to a source of RF energy, a removable electrode removably coupled to the base electrode,...
6802949 Method for manufacturing half-metallic magnetic oxide and plasma sputtering apparatus used in the same  
Disclosed are a method for manufacturing a half-metallic magnetic oxide and a plasma sputtering apparatus used in the method. A conductor provided with at least one hole is disposed between a metal...
6800183 Sputtering device  
The invention is intended to provide a sputtering device in which a single sputtering chamber is equipped with a plurality of supports and a target-positioning mechanism for rotating the supports...
6787010 Non-thermionic sputter material transport device, methods of use, and materials produced thereby  
A sputter transport device comprises a sealed chamber, a negatively-biased target cathode holder disposed in the chamber, and a substrate holder disposed in the chamber and spaced at a distance...
6783639 Coils for generating a plasma and for sputtering  
A sputtering coil for a plasma chamber in a semiconductor fabrication system is provided. The sputtering coil couples energy into a plasma and also provides a source of sputtering material to be...
6783638 Flat magnetron  
An electric field is provided in a first direction between an anode and a target having a flat disposition. A magnetic field is provided such that the magnetic flux lines are in a second direction...
6770175 Apparatus for and method of forming electrode for lithium secondary cell  
An apparatus, for forming an electrode for a lithium secondary cell capable of readily forming an active material layer constituted by at least two elements and controlling the composition of the...
6758949 Magnetically confined metal plasma sputter source with magnetic control of ion and neutral densities  
A metal vapor deposition reactor includes a primary reactor chamber having a primary chamber enclosure comprising a ceiling and side wall. The reactor further includes a secondary reactor chamber...
6758948 Method and apparatus for depositing films  
A method and apparatus for performing physical vapor deposition of a layer or a substrate, composed of a deposition chamber enclosing a plasma region for containing an ionizable gas; an...
6758947 Damage-free sculptured coating deposition  
We disclose a method of applying a sculptured layer of material on a semiconductor feature surface using ion deposition sputtering, wherein a surface onto which the sculptured layer is applied is...
6755945 Ionized PVD with sequential deposition and etching  
An iPVD apparatus ( 20 ) is programmed to deposit material ( 10 ) into high aspect ratio submicron features ( 11 ) on semiconductor substrates ( 21 ) by cycling between deposition and etch modes...
6752912 Laser selection of ions for sputter deposition of titanium containing films  
In a sputtering apparatus, target particles to be deposited onto a substrate are selectively ionized relative to other particles in the deposition chamber. For example, titanium or...
6730196 Auxiliary electromagnets in a magnetron sputter reactor  
A magnetron sputter reactor having a complexly shaped target with a vault arranged about a central axis facing the wafer. The vault may be right cylindrical with axially magnetized magnets disposed...
6726812 Ion beam sputtering apparatus, method for forming a transparent and electrically conductive film, and process for the production of a semiconductor device  
An ion beam sputtering apparatus comprising: a first means for generating an ion beam and directing said ion beam in a prescribed direction, a second means for supporting a target at a position...
6723209 System and method for performing thin film deposition or chemical treatment using an energetic flux of neutral reactive molecular fragments, atoms or radicals  
A system and method for forming a chemically reacted layer proximate an exposed surface of a substrate is disclosed. A gas supply provides a chemically reactive molecular gas to an ion source that...
6719886 Method and apparatus for ionized physical vapor deposition  
Ionized Physical Vapor Deposition (IPVD) is provided by a method of apparatus ( 500 ) particularly useful for sputtering conductive metal coating material from an annular magnetron sputtering...
6706155 Sputtering apparatus and film manufacturing method  
In order to form a thin film having a high aspect ratio, a space between a target within a vacuum chamber and a substrate table is enclosed by an anode electrode and earth electrodes. The anode...
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