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8066853 Method of forming inorganic alignment film, inorganic alignment film, substrate for electronic device, liquid crystal panel and electronic apparatus  
A method of forming an inorganic alignment film made substantially of an inorganic material on a base substrate is provided comprising a milling process of irradiating ion beams onto the surface of...
7901545 Ionized physical vapor deposition (iPVD) process  
An iPVD system is programmed to deposit uniform material, such as barrier material, into high aspect ratio nano-size features on semiconductor substrates using a process which enhances the sidewall...
7820020 Apparatus for plasma-enhanced physical vapor deposition of copper with RF source power applied through the workpiece with a lighter-than-copper carrier gas  
A method of performing physical vapor deposition of copper onto an integrated circuit in a vacuum chamber of a plasma reactor includes providing a copper target near a ceiling of the chamber,...
7700484 Method and apparatus for a metallic dry-filling process  
An iPVD system is programmed to deposit uniform material, such as a metallic material, into high aspect ratio nano-sized features on semiconductor substrates using a process that enhances the...
7686926 Multi-step process for forming a metal barrier in a sputter reactor  
A multi-step process performed in a plasma sputter chamber including sputter deposition from the target and argon sputter etching of the substrate. The chamber includes a quadruple electromagnetic...
7626183 Methods for modifying features of a workpiece using a gas cluster ion beam  
Embodiments of methods of modifying surface features on a workpiece with a gas cluster ion beam are generally described herein. Other embodiments may be described and claimed.
7611610 Method and apparatus for controlling topographical variation on a milled cross-section of a structure  
An improved method of controlling topographical variations when milling a cross-section of a structure, which can be used to reduce topographical variation on a cross-section of a write-head in...
7582490 Controlled fabrication of gaps in electrically conducting structures  
A method for controlling a gap in an electrically conducting solid state structure provided with a gap. The structure is exposed to a fabrication process environment conditions of which are...
7550748 Apparatus and methods for systematic non-uniformity correction using a gas cluster ion beam  
Embodiments of an apparatus and methods for correcting systematic non-uniformities using a gas cluster ion beam are generally described herein. Other embodiments may be described and claimed.
7550749 Methods and processing systems for using a gas cluster ion beam to offset systematic non-uniformities in workpieces processed in a process tool  
Embodiments of an apparatus and methods for offsetting systematic non-uniformities using a gas cluster ion beam are generally described herein. Other embodiments may be described and claimed.
7541597 Automatic cleaning of ion sources  
The invention relates to the automatic cleaning of ion sources inside mass spectrometers, especially the cleaning of ion sources where the ions are generated by matrix-assisted laser desorption...
7504006 Self-ionized and capacitively-coupled plasma for sputtering and resputtering  
A DC magnetron sputter reactor for sputtering deposition materials such as tantalum and tantalum nitride, for example, and its method of use, in which self-ionized plasma (SIP) sputtering and...
7427568 Method of forming an interconnect structure  
A method of layer formation on a substrate with high aspect ratio features is disclosed. The layer is formed from a gas mixture comprising one or more process gases and one or more etch species....
7410590 Transferable micro spring structure  
A method for mounting the micro spring structures onto cables or contact structures includes forming a spring island having an “upside-down” stress bias on a first release material layer or dir...
7404879 Ionized physical vapor deposition apparatus using helical self-resonant coil  
Provided is an ionized physical vapor deposition (IPVD) apparatus having a helical self-resonant coil. The IPVD apparatus comprises a process chamber having a substrate holder that supports a...
7399539 DWDD-type magneto-optic recording medium including buffer regions between recording track regions and method of producing the same  
A magneto-optic recording medium has a stacked structure composed of a memory layer, a domain wall displacement layer having domain wall-resistant magnetism smaller than the memory layer, and a...
7399388 Sequential gas flow oxide deposition technique  
A method of depositing a silica glass insulating film over a substrate. In one embodiment the method comprises exposing the substrate to a silicon-containing reactant introduced into a chamber in...
7338581 Sputtering apparatus  
A sputtering apparatus includes paired targets 31 disposed in a vacuum chamber 30, substrate holder 33 disposed at a position nearly perpendicular to the paired target 31 and apart from a space...
7300684 Method and system for coating internal surfaces of prefabricated process piping in the field  
The coating of internal surfaces of a workpiece is achieved by connecting a bias voltage such that the workpiece functions as a cathode and by connecting an anode at each opening of the workpiece....
7229533 Method of making coated article having low-E coating with ion beam treated and/or formed IR reflecting layer  
A coated article is provided that may be used as a vehicle windshield, insulating glass (IG) window unit, or the like. An ion beam is used during at least part of forming an infrared (IR)...
7118657 Pulsed ion beam control of solid state features  
For controlling a physical dimension of a solid state structural feature, a solid state structure is provided, having a surface and having a structural feature. The structure is exposed to a first...
7081186 Combined coating process comprising magnetic field-assisted, high power, pulsed cathode sputtering and an unbalanced magnetron  
A PVD process for coating substrates, wherein the substrate is pre-treated in the vapor of a pulsed, magnetic field-assisted cathode sputtering operation, and during pre-treatment a magnetic field...
7048837 End point detection for sputtering and resputtering  
Plasma etching or resputtering of a layer of sputtered materials including opaque metal conductor materials may be controlled in a sputter reactor system. In one embodiment, resputtering of a...
6991709 Multi-step magnetron sputtering process  
A multi-step sputtering process in plasma sputter reactor having target and magnetron operable in two modes, for example, in a substrate sputter etch and a substrate sputter deposition. The target...
6979388 Magnetic thin film disks with a nonuniform composition  
A method of influencing variations in composition of thin films is described. The elemental plasma field distribution in sputtering systems is manipulated by generating a nonuniform electric field...
6958112 Methods and systems for high-aspect-ratio gapfill using atomic-oxygen generation  
Methods and systems are provided for depositing silicon oxide in a gap on a substrate. The silicon oxide is formed by flowing a process gas into a process chamber and forming a plasma having an...
6929720 Sputtering source for ionized physical vapor deposition of metals  
A plasma processing system is provided with a cylindrical target, open at both ends, and with a magnet array that forms a hollow cathode magnetron (HCM). At one of the open ends is placed an...
6884329 Diffusion enhanced ion plating for copper fill  
A method of filling copper into a high-aspect ratio via by a plasma sputter process and allowing the elimination of electrochemical plating. In one aspect of the invention, the sputtering is...
6872289 Thin film fabrication method and thin film fabrication apparatus  
A thin film is fabricated while causing ions in a plasma P to be incident by effecting biasing relative to the space potential of the plasma P by imparting a set potential to the surface of a...
6860975 Barrier layer and method of depositing a barrier layer  
A barrier layer is deposited on a substrate having a recess by sputtering tantalum in a nitrogen atmosphere. A flow of the nitrogen is selected to deposit mixed phase bcc/βTa, and sputter ions are ...
6852203 Three-dimensional periodical structure, its manufacturing method, and method of manufacturing film  
A three-dimensional periodical structure whose period is about 1 μm or smaller is provided. At least two kinds of films which have two-dimensionally substantially periodical projections are ...
6808606 Method of manufacturing window using ion beam milling of glass substrate(s)  
This invention relates to a method of making a window (e.g., vehicle windshield, architectural window, etc.), and the resulting window product. At least one glass substrate of the window is ion...
6802945 Method of metal sputtering for integrated circuit metal routing  
A method of forming a device, comprising the following steps. A wafer holder and inner walls of a chamber are coated with a seasoning layer The wafer is placed upon the wafer holder and is cleaned...
6800180 Resputtering to achieve better step coverage  
An improved apparatus and method for manufacturing semiconductor devices, and, in particular, for depositing material at the bottom of a contact hole, comprises sputtering a material onto a...
6787006 Operating a magnetron sputter reactor in two modes  
A multi-step sputtering process in plasma sputter reactor having target and magnetron operable in two modes, for example, in a substrate sputter etch and a substrate sputter deposition. The target...
6783643 Control of solid state dimensional features  
A solid state structure having a surface is provided and exposed to a flux, F, of incident ions under conditions that are selected based on: ∂∂tC(r,t)=F Y1+D∇2C-Cτtrap-F C σC, where C is ...
6767436 Method and apparatus of plasma-enhanced coaxial magnetron for sputter-coating interior surfaces  
A plasma-enhanced coaxial magnetron sputter-cleaning and coating assembly for sputter-cleaning and coating the interior surfaces of a cylindrical workpiece is provided. The apparatus sputter-coats...
6758947 Damage-free sculptured coating deposition  
We disclose a method of applying a sculptured layer of material on a semiconductor feature surface using ion deposition sputtering, wherein a surface onto which the sculptured layer is applied is...
6755945 Ionized PVD with sequential deposition and etching  
An iPVD apparatus (20) is programmed to deposit material (10) into high aspect ratio submicron features (11) on semiconductor substrates (21) by cycling between deposition and etch modes within a...
6743485 Pre-treatment for salicide process  
A method for treating a silicon substrate is described. The silicon substrate is placed into a sputtering equipment. A sputtering step is performed to simultaneously dry clean and amorphize the...
6730605 Redistribution of copper deposited films  
A method to redistribute solid copper deposited by PVD on a wafer topography. The deposited copper is solubilized in a fluid for redistribution. The copper redistribution prevents inherent...
6709553 Multiple-step sputter deposition  
A method and apparatus for depositing a film on a substrate comprising a deposition interval wherein DC power is applied to a target to form a first plasma and material is sputtered from the target...
6652718 Use of RF biased ESC to influence the film properties of Ti and TiN  
A method of depositing thin films comprising Ti and TiN within vias and trenches having high aspect ratio openings of 6:1 is disclosed. The Ti and TiN layers are formed on an integrated circuit...
6646277 Charging control and dosimetry system for gas cluster ion beam  
A method and apparatus for gas cluster ion beam (GCIB) processing uses X-Y scanning of the workpiece relative to the GCIB. A neutralizer reduces surface charging of the workpiece by the GCIB. A...
6572933 Forming adherent coatings using plasma processing  
Process for forming adherent coatings using plasma processing. Plasma Immersion Ion Processing (PIIP) is a process where energetic (hundreds of eV to many tens of keV) metallic and metalloid ions...
6569295 Method for grading surface topography for improved step coverage and planarization  
A method is provided for grading the surface topography of a surface to improve step coverage for an overcoat. In accordance with one aspect of the present invention, an ABS of a slider and...
6491799 Method for forming a thin dielectric layer  
The method disclosed herein comprises initially providing a tool comprised of a process chamber, a lid above the process chamber, an RF coil for assisting in generating a plasma in the chamber, a...
6478933 Method for creating surface oil reservoirs on coated iron  
A process for increasing the lubrication of ductile-iron lubricated contacts includes abrasive-blasting and plasma etching a ductile-iron component prior to coating. A wear resistant or low...
6471832 Method of producing protected thermal head  
A method of producing a wear-resistant protective film for a thermal head comprises depositing a wear-resistant protective film by sputtering on a thermal head which includes a substrate, and a...
6468404 Apparatus and method for reducing redeposition in a physical vapor deposition system  
A PVD system comprises a hollow cathode magnetron with a capability of producing a high magnetic field for PVD and a low magnetic field for pasting. The high magnetic field is used for PVD and...
Matches 1 - 50 out of 337 1 2 3 4 5 6 7 >