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Match Document Document Title
8992744 Lanthanoid aluminate film fabrication method  
A method of fabricating by co-sputtering deposition a lanthanoid aluminate film with enhanced electrical insulativity owing to suppression of deviation in composition of the film is disclosed....
8980066 Thin film metal oxynitride semiconductors  
The present invention generally relates to a semiconductor film and a method of depositing the semiconductor film. The semiconductor film comprises oxygen, nitrogen, and one or more elements...
8969114 Method of manufacturing organic light emitting display apparatus  
A method of manufacturing an organic light emitting display apparatus, the method includes loading a substrate on a moving unit, determining an angle formed between a side of the substrate and an...
8961745 Plant and method for producing a semiconductor film  
The plant is suitable to produce a semiconductor film (8) having a desired thickness and consisting substantially of a compound including at least one element for each of the groups 11, 13, and 16...
8936703 Methods to fabricate non-metal films on semiconductor substrates using physical vapor deposition  
Embodiments of the invention relate generally to semiconductor device fabrication and processes, and more particularly, to methods for implementing arrangements of magnetic field generators...
8900421 Method of fabricating resistance memory  
A method of fabricating a variable resistance layer of a resistance memory is disclosed. The method includes placing a substrate in a sputtering chamber that has a copper target and a silicon...
8894826 Copper indium gallium selenide (CIGS) thin films with composition controlled by co-sputtering  
A method and apparatus for forming a thin film of a copper indium gallium selenide (CIGS)-type material are disclosed. The method includes providing first and second targets in a common sputtering...
8882971 Sputtering apparatus and manufacturing method of semiconductor light-emitting element  
A sputtering apparatus (1) includes: a chamber (10) having an inside maintained in a depressurized state to generate plasma discharge (20); a cathode (22) placed in the chamber (10) and holding a...
8858844 In—Ga—Zn—O type sputtering target  
A sputtering target including an oxide sintered body which includes In, Ga and Zn and includes a structure having a larger In content than that in surrounding structures and a structure having...
8840763 Methods for stable process in a reactive sputtering process using zinc or doped zinc target  
Embodiments disclosed herein generally relate to a method for seasoning a sputtering target in-situ with a substrate to be processed. New semiconductor compounds containing oxygen, nitrogen, and...
8821798 Titanium nitride as sensing layer for microwell structure  
A method of fabricating a microwell in an array structure is disclosed herein. The array structure can include a plurality of field effect transistors (FETs), where each FET has a gate structure....
8821697 Silver selenide sputtered films and method and apparatus for controlling defect formation in silver selenide sputtered films  
Method and apparatus for sputter depositing silver selenide and controlling defect formation in and on a sputter deposited silver selenide film are provided. A method of forming deposited silver...
8795479 Wafer clamp assembly for holding a wafer during a deposition process  
A wafer clamp assembly for holding a wafer during a deposition process comprises an outer annular member defining a central recess that has a diameter slightly greater than the diameter of the...
8721846 Method of forming film, film forming apparatus and storage medium  
A film forming method includes mounting a substrate on a mounting member after loading the substrate into a reaction chamber, adsorbing a compound of a first metal on a surface of the substrate by...
8603304 Method for manufacturing nickel silicide nano-wires  
A method for making nickel silicide nano-wire, the method includes the following steps. Firstly, a silicon substrate and a growing device, and the growing device including a reacting room are...
8551810 Method for manufacturing semiconductor device  
In a transistor including an oxide semiconductor film, a metal oxide film for preventing electrification which is in contact with the oxide semiconductor film and covers a source electrode and a...
8500963 Sputtering of thermally resistive materials including metal chalcogenides  
A plasma sputtering method for metal chalcogenides, such as germanium antimony telluride (GST), useful in forming phase-change memories. The substrate is held at a selected temperature at which...
8435388 Reactive sputter deposition processes and equipment  
The invention is a method for obtaining a reactive sputtering process with a reduced or eliminated hysteresis behavior. This is achieved by employing a target made from a mixture of metal and...
8398826 Thin film semiconductor material produced through reactive sputtering of zinc target using nitrogen gases  
The present invention generally comprises a semiconductor film and the reactive sputtering process used to deposit the semiconductor film. The sputtering target may comprise pure zinc (i.e.,...
8349144 Methods of sputtering using a non-bonded semiconducting target  
A sputtering cathode is generally provided. The sputtering cathode can include a semiconducting target (e.g., a cadmium sulfide target, a cadmium tin oxide target, etc.) defining a sputtering...
8242348 Methods of manufacturing quantum well materials  
Processes for economical large scale commercial production of blocks of quantum well particles, platelets, or continuous sheets of material imparting minimal or essentially no parasitic substrate...
8198179 Method for producing group III nitride semiconductor light-emitting device  
A method for producing a group III nitride semiconductor light-emitting device including: an intermediate layer formation step in which an intermediate layer containing group III nitride is formed...
8133364 Formation of photoconductive and photovoltaic films  
The present application discloses a method and system of depositing a lead selenide film onto another material. The lead selenide film may used in a photoconductive application or a photovoltaic...
8062777 Semiconductor thin film and process for producing the same  
This invention provides a transparent oxide semiconductor, which comprises an oxide comprising indium oxide as a main component and cerium oxide as an additive and has such properties that...
8039400 Reducing contamination of semiconductor substrates during BEOL processing by performing a deposition/etch cycle during barrier deposition  
A conductive barrier material of a metallization system of a semiconductor device may be formed on the basis of one or more deposition/etch cycles, thereby providing a reduced material thickness...
8029853 Fabrication process for magnetoresistive devices of the CPP type  
The inventive fabrication process for magnetoresistive devices (CPP-GMR devices) involves the formation of a zinc oxide or ZnO layer that provides the intermediate layer of a spacer layer,...
8012315 Lanthanoid aluminate film fabrication method  
A method of fabricating by co-sputtering deposition a lanthanoid aluminate film with enhanced electrical insulativity owing to suppression of deviation in composition of the film is disclosed....
8012316 FCC-like trilayer AP2 structure for CPP GMR EM improvement  
A method of forming a CPP-GMR spin valve having a pinned layer with an AP2/coupling/AP1 configuration is disclosed wherein the AP2 portion is a FCC-like trilayer having a composition represented...
7998319 Process for the formation of miniaturized getter deposits and getter deposits so obtained  
A process is provided for the formation of miniaturized getter deposits, comprising the steps of forming a layer of a photosensitive polymeric material on a support; selectively exposing the...
7887677 Silicon object forming method and apparatus  
A silicon object formation target substrate is arranged in a first chamber, a silicon sputter target is arranged in a second chamber communicated with the first chamber, plasma for chemical...
7867801 Apparatus for producing group-III nitride semiconductor layer, method of producing group-III nitride semiconductor layer, method of producing group-III nitride semiconductor light-emitting device, group-III nitride semiconductor light-emitting device thereof, and lamp thereof  
An apparatus for producing a group-III nitride semiconductor layer which forms a group-III nitride semiconductor layer on a substrate by a sputtering method, the apparatus including: a first...
7851691 Thermoelectric devices and applications for the same  
High performance thin film thermoelectric couples and methods of making the same are disclosed. Such couples allow fabrication of at least microwatt to watt-level power supply devices operating at...
7847187 Photovoltaic cell comprising a photovoltaically active semiconductor material comprising a particular portion of tellurium ions replaced with halogen and nitrogen ions  
The invention relates to a photovoltaic cell comprising a photovoltaically active semiconductor material, wherein the photovoltaically active semiconductor material is a p- or n-doped...
7838763 Manufacturing apparatus and method for large-scale production of thin-film solar cells  
A method of manufacturing improved thin-film solar cells entirely by sputtering includes a high efficiency back contact/reflecting multi-layer containing at least one barrier layer consisting of a...
7749785 Manufacturing method of group III nitride semiconductor light-emitting device  
The present invention provides a manufacturing method of a group III nitride semiconductor light-emitting device, including a lamination step of forming a plurality of lamination films including a...
7608544 Etching method and storage medium  
An etching method which makes it possible to obtain a desired etching shape with ease, and a computer-readable storage medium storing a program for implementing the method. The etching method is...
7146722 Method of forming a bond pad structure  
A bond pad structure comprising two bond pads, methods of forming the bond pad structure, an integrated circuit die incorporating the bond pad structure, and methods of using the bond pad...
7037595 Thin hafnium oxide film and method for depositing same  
A thin layer of hafnium oxide or stacking of thin layers comprising hafnium oxide layers for producing surface treatments of optical components, or optical components, in which at least one layer...
6887353 Tailored barrier layer which provides improved copper interconnect electromigration resistance  
Disclosed herein is a barrier layer structure useful in forming copper interconnects and electrical contacts of semiconductor devices. The barrier layer structure comprises a first layer of TaNx...
6784085 MIIIN based materials and methods and apparatus for producing same  
A high deposition rate sputter method is utilized to produce bulk, single-crystal, low-defect density Group III nitride materials suitable for microelectronic and optoelectronic devices and as...
6758947 Damage-free sculptured coating deposition  
We disclose a method of applying a sculptured layer of material on a semiconductor feature surface using ion deposition sputtering, wherein a surface onto which the sculptured layer is applied is...
6746960 Electronic techniques for analyte detection  
Techniques are used to detect and identify analytes. Techniques are used to fabricate and manufacture sensors to detect analytes. An analyte (1810) is sensed by sensors (1820) that output...
6726812 Ion beam sputtering apparatus, method for forming a transparent and electrically conductive film, and process for the production of a semiconductor device  
An ion beam sputtering apparatus comprising: a first means for generating an ion beam and directing said ion beam in a prescribed direction, a second means for supporting a target at a position...
6722942 Chemical mechanical polishing with electrochemical control  
Various embodiments of a planarization device and methods of using the same are provided. In one aspect, a device for planarizing a surface of a semiconductor workpiece is provided that includes a...
6692568 Method and apparatus for producing MIIIN columns and MIIIN materials grown thereon  
A method utilizes sputter transport techniques to produce arrays or layers of self-forming, self-oriented columnar structures characterized as discrete, single-crystal Group III nitride posts or...
6652717 Use of variable impedance to control coil sputter distribution  
Variable reactances in an impedance-matching box for an RF coil, in a plasma deposition system for depositing a film of sputtered target material on a substrate, can be varied during the...
6632583 Optical recording medium and production method of the same  
The present invention relates to an optical recording medium having a protective layer and a phase-change recording layer on a substrate, said protective layer containing a metallic oxysulfide and...
6599399 Sputtering method to generate ionized metal plasma using electron beams and magnetic field  
A deposition system in a semiconductor fabrication system provides at least one electron gun which injects energetic electrons into a semiconductor fabrication chamber to initiate and sustain a...
6579426 Use of variable impedance to control coil sputter distribution  
Capacitances in an impedance-matching box for an RF coil, in a plasma deposition system for depositing a film of sputtered target material on a substrate, can be varied during the deposition...
6555221 Method for forming an ultra microparticle-structure  
A method for forming an ultra microparticle-structure composed of ultra microparticles including the steps of: forming on a substrate higher wettability parts and lower wettability parts to a...

Matches 1 - 50 out of 418 1 2 3 4 5 6 7 8 9 >