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7381292 |
Inductively coupled plasma generating apparatus incorporating serpentine coil antenna
An inductively coupled plasma (ICP) generating apparatus includes an evacuated reaction chamber, an antenna installed at an upper portion of the reaction chamber to induce an electric field for...
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7374648 |
Single piece coil support assemblies, coil constructions and methods of assembling coil constructions
The invention includes a coil support assembly having an insulator interfacing a surface of a shield disposed within a processing chamber. The insulator has an extension which extends through the...
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7374620 |
Substrate processing apparatus
A substrate processing apparatus ( 10 A) using a microwave plasma is disclosed wherein an inner partition wall ( 15 ) is provided within a process chamber ( 11 ) so that the inside of the process...
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7367281 |
Plasma antenna
The plasma antenna is designed to allow connection between electric elements within the antenna to be varied without changing the construction of the antenna during a chemical vapor deposition...
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7363876 |
Multi-core transformer plasma source
A transformer-coupled plasma source using toroidal cores forms a plasma with a high-density of ions along the center axis of the torus. In one embodiment, cores of a plasma generator are stacked in...
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7354501 |
Upper chamber for high density plasma CVD
The present invention is directed to an upper chamber design of a plasma CVD chamber which provides more uniform conditions for forming thin CVD films on a substrate. Embodiments of the invention...
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RE40195 |
Large area plasma source
A chamber housing ( 2 ) enclosing a plasma region ( 20 ) in a large area plasma source used for performing plasma assisted processes in large area substrates, the chamber housing ( 2 ) being...
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7338577 |
Inductively coupled plasma processing apparatus having internal linear antenna for large area processing
An inductively coupled plasma processing apparatus for a large area processing, the inductively coupled plasma processing apparatus comprising: a reaction chamber; a plurality of linear antennas...
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7332731 |
Radiation system and lithographic apparatus
A radiation system for providing a projection beam of radiation is disclosed. The radiation system includes an extreme ultraviolet source for providing extreme ultra violet radiation, and a...
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7320734 |
Plasma immersion ion implantation system including a plasma source having low dissociation and low minimum plasma voltage
A system for processing a workpiece includes a plasma immersion ion implantation reactor with an enclosure having a side wall and a ceiling and defining a chamber, and a workpiece support pedestal...
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7309961 |
Driving frequency modulation system and method for plasma accelerator
A plasma accelerator ( 300 ) is disclosed that has three separate sections of coils ( 301 - 316 ) disposed outside the plasma chamber ( 321 ). The separate sections of coils include an initial...
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7309842 |
Shielded monolithic microplasma source for prevention of continuous thin film formation
A monolithic microplasma source includes a dielectric substrate having an outer surface that is exposed to a time varying electric field. A gap layer is positioned on an inner surface of the...
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7276135 |
Vacuum plasma processor including control in response to DC bias voltage
A plasma processor chamber includes a bottom electrode and a top electrode assembly having a center electrode surrounded by a grounded electrode. RF excited plasma between the electrodes induces a...
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7273533 |
Plasma processing system with locally-efficient inductive plasma coupling
An inductively coupled plasma source is provided with a peripheral ionization source for producing a high-density plasma in a vacuum chamber for semiconductor wafer coating or etching. The source...
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7264688 |
Plasma reactor apparatus with independent capacitive and toroidal plasma sources
A plasma reactor includes a toroidal plasma source having an RF power applicator, and RF generator being coupled to the RF power applicator. The reactor further includes a capacitively coupled...
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7255774 |
Process apparatus and method for improving plasma production of an inductively coupled plasma
A processing system for processing a substrate with a plasma comprises a processing chamber defining a processing space for containing a substrate to be processed with a plasma formed within the...
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7241361 |
Magnetically enhanced, inductively coupled plasma source for a focused ion beam system
The present invention provides an inductively coupled, magnetically enhanced ion beam source, suitable to be used in conjunction with probe-forming optics to produce an ion beam without kinetic...
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7230258 |
Plasma-based debris mitigation for extreme ultraviolet (EUV) light source
A light source chamber in an Extreme Ultraviolet (EUV) lithography system may include a secondary plasma to ionize debris particles created by the light source and a foil trap to trap the ionize...
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7223448 |
Methods for providing uniformity in plasma-assisted material processes
A method for providing uniformity in plasma-assisted material processes. A shielding plate is implemented within a plasma chamber above a substrate. The dimensions, geometry, and location of the...
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7223321 |
Faraday shield disposed within an inductively coupled plasma etching apparatus
An apparatus and method is provided for positioning and utilizing a Faraday shield in direct exposure to a plasma within an inductively coupled plasma etching apparatus. Broadly speaking, the...
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7217337 |
Plasma process chamber and system
The present invention relates to a plasma process chamber, which includes: an upper housing having a gas inlet connected to a gas source, and a gas shower head placed in the upper housing; and a...
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7210424 |
High-density plasma processing apparatus
A high-density plasma processing apparatus includes a processing chamber, having a susceptor for supporting an object to be processed positioned therein and a dielectric window positioned on the...
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7205240 |
HDP-CVD multistep gapfill process
A gapfill process is provided using cycling of HDP-CVD deposition, etching, and deposition step. The fluent gas during the first deposition step includes an inert gas such as He, but includes H 2 ...
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7190119 |
Methods and apparatus for optimizing a substrate in a plasma processing system
An arrangement for processing a semiconductor substrate in a plasma processing system is disclosed. The arrangement includes providing a RF coupling structure having a first terminal and a second...
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7182880 |
Process for reducing particle formation during etching
A process for reducing the formation of potential device-contaminating particles in a process chamber, particularly an etch chamber or a pre-clean chamber used to pre-clean substrates prior to a...
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7176469 |
Negative ion source with external RF antenna
A radio frequency (RF) driven plasma ion source has an external RF antenna, i.e. the RF antenna is positioned outside the plasma generating chamber rather than inside. The RF antenna is typically...
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7166816 |
Inductively-coupled torodial plasma source
Apparatus for dissociating gases includes a plasma chamber comprising a gas. A first transformer having a first magnetic core surrounds a first portion of the plasma chamber and has a first primary...
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7163603 |
Plasma source assembly and method of manufacture
A plasma source assembly including an outer shield, a dielectric chamber wall, and a helical coil provided between the outer shield and the dielectric chamber wall. The plasma source assembly also...
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7163602 |
Apparatus for generating planar plasma using concentric coils and ferromagnetic cores
A plasma source using a combination of concentric coils and ferromagnetic cores drives a radio frequency magnetic flux with controlled radial magnitude variation through a window into a reduced...
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7161112 |
Toroidal low-field reactive gas source
An apparatus for dissociating gases includes a plasma chamber that may be formed from a metallic material and a transformer having a magnetic core surrounding a portion of the plasma chamber and...
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7156950 |
Gas diffusion plate for use in ICP etcher
A gas diffusion plate supplying process gases into a chamber of an ICP (inductively coupled plasma) etcher is provided in the present invention. The gas diffusion plate includes a porous plate...
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7150805 |
Plasma process device
A plasma CVD system S includes: a matching circuit 16 that matches impedance of a RF generator 1 to impedance of a discharge electrode 2 so that incident power to become incident to the...
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7135089 |
Method and apparatus for plasma processing
A plasma processing method includes controlling a pressure of an interior of a vacuum chamber to a specified pressure by exhausting the interior of the vacuum chamber while supplying gas into the...
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7132040 |
Matching unit for semiconductor plasma processing apparatus
This matching unit is used for a semiconductor plasma processing apparatus supplying high-frequency power via feeding line to an electrode provided in a chamber, and includes first and second...
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7115185 |
Pulsed excitation of inductively coupled plasma sources
The reaction rate of a feed gas flowed into a plasma chamber is controlled. In one embodiment a pulsed power supply repeatedly applies a high power pulse to the plasma chamber to increase the...
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7114532 |
Liner for use in processing chamber
A container for use in a processing chamber to lessen the amount of contaminant particles found within the chamber after processing. The container fits closely within the chamber and includes ports...
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7100532 |
Plasma production device and method and RF driver circuit with adjustable duty cycle
A reactive circuit is disclosed as part of a method and system for generating high density plasma that does not require the use of a dynamic matching network for directly driving a plasma...
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7096819 |
Inductive plasma processor having coil with plural windings and method of controlling plasma density
An inductive plasma processor includes a multiple winding radio frequency coil having plural electrically parallel, spatially concentric windings (1) having different amounts of RF power supplied...
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7094316 |
Externally excited torroidal plasma source
A plasma reactor for processing a workpiece, including an enclosure defining a vacuum chamber, a workpiece support within the enclosure facing an overlying portion of the enclosure, the enclosure...
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7094314 |
Atmospheric pressure non-thermal plasma device to clean and sterilize the surfaces of probes, cannulas, pin tools, pipettes and spray heads
The present invention relates to methods and apparatuses for the use of atmospheric pressure non-thermal plasma to clean and sterilize the surfaces of liquid handling devices.
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7094313 |
Universal mid-frequency matching network
A substrate processing system is provided with a processing chamber, an alternating voltage supply, and an impedance matching network. The processing chamber holds a substrate during processing and...
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7090742 |
Device for producing inductively coupled plasma and method thereof
A device for producing inductively coupled plasma and method thereof, wherein a coil is uniformly and dispersedly arranged on a lateral wall in a chamber, instead of the prior device of a permanent...
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7084369 |
Harmonic multiplexer
A method and apparatus for maintaining a plasma in a plasma region, by supplying RF power at a fundamental frequency to the plasma region together with a gas in order to create an RF...
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7081711 |
Inductively generated streaming plasma ion source
A novel pulsed, neutralized ion beam source is provided. The source uses pulsed inductive breakdown of neutral gas, and magnetic acceleration and control of the resulting plasma, to form a beam....
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7074298 |
High density plasma CVD chamber
The present invention is directed to the design of a plasma CVD chamber which provides more uniform conditions for forming thin CVD films on a substrate. In one embodiment, an apparatus for...
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7056416 |
Atmospheric pressure plasma processing method and apparatus
Provided is a plasma processing method for generating microplasma in a space of a microplasma source arranged in the vicinity of an object to be processed by supplying gas to the space and...
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7047903 |
Method and device for plasma CVD
A plasma CVD apparatus is used to form thin films of excellent uniform thickness on both surfaces of a substrate without the step of turning a substrate over, and includes two connected vacuum...
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7030335 |
Plasma reactor with overhead RF electrode tuned to the plasma with arcing suppression
A plasma reactor for processing a semiconductor workpiece, includes a reactor chamber having a chamber wall and containing a workpiece support for holding the semiconductor workpiece, an overhead...
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7019253 |
Electrically controlled plasma uniformity in a high density plasma source
Apparatus including a chamber and a coil system for converting a field-generating current into a RF magnetic field in the chamber when the chamber contains an ionized gas which interacts with the...
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7018506 |
Plasma processing apparatus
A plasma processing apparatus comprises a plate that separates a high frequency induction antenna from a vacuum chamber. The plate comprises a nonmagnetic metal plate that has an opening and a...
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