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7625460 Multifrequency plasma reactor  
A multifrequency plasma reactor includes first, second and third power generators operably coupled to at least one of an upper and lower electrode for generating power signals. The plasma reactor...
7622017 Processing apparatus and gas discharge suppressing member  
A processing apparatus for performing a process on a surface of an object to be processed by applying a high frequency power to an electrode installed in an airtight processing chamber to convert a...
7618516 Method and apparatus to confine plasma and to enhance flow conductance  
The embodiments of the present invention generally relate to annular ring used in a plasma processing chamber. In one embodiment, the annular ring includes an inner wall, an upper outer wall, a...
7615132 Plasma processing apparatus having high frequency power source with sag compensation function and plasma processing method  
A plasma processing apparatus suitable for high-speed and high-definition etching is provided. By applying to a wafer chucking electrode 9 a voltage waveform in which an absolute value of high...
7615131 Plasma etching chamber and plasma etching system using same  
Disclosed is a plasma etching chamber for completely dry-cleaning a film material and particles deposited at the periphery of a wafer through plasma etching while generating plasma at the top to...
7611585 Plasma reaction chamber with a built-in magnetic core  
A plasma reaction chamber includes a chamber housing having two inner connection passages for connecting two vacuum chambers to other vacuum chambers. Two vacuum chambers and two inner connection...
7611640 Minimizing arcing in a plasma processing chamber  
A plasma processing chamber for processing a substrate to form electronic components thereon is disclosed. The plasma processing chamber includes a plasma-facing component having a plasma-facing...
7610874 Poled plasma deposition  
A poled polymer structure is formed on the surface of a substrate by poling a nonlinear optical reactant during a plasma polymerizing deposition of the reactant onto the surface. The substrate is...
7608162 Plasma processing apparatus and method  
A plasma processing apparatus includes a high-frequency power source for applying bias power to an electrode on which a substrate is disposed, an insulating layer formed on a surface of the...
7592261 Method for suppressing charging of component in vacuum processing chamber of plasma processing system and plasma processing system  
When the state of the vacuum processing chamber is switched to an idle state in which an insulating fluid is circulated while a semiconductor wafer W is not placed in the vacuum processing chamber...
7587989 Plasma processing method and apparatus  
In a plasma processing method, on a back side of a cathode electrode is provided at least one conductor plate d.c. potentially insulated from the cathode electrode and an opposing electrode, and...
7582184 Plasma processing member  
A plasma processing member includes a ceramic base, a plasma generating electrode embedded in the ceramic base, and an electrode power supply member connected to the plasma generating electrode....
7582185 Plasma-processing apparatus  
A plasma-processing apparatus having a high frequency power application electrode in which plasma is generated by supplying VHF power to the high frequency power application electrode. The...
7566379 Method and apparatus for an improved upper electrode plate with deposition shield in a plasma processing system  
The present invention presents an improved upper electrode for a plasma processing system, wherein the design and fabrication of an electrode plate with a deposition shield coupled to the upper...
7544270 Apparatus for processing a substrate  
An apparatus includes a plasma process chamber and a support element capable of supporting a substrate inside the plasma process chamber. At least one plasma control element is placed adjacent to a...
7527016 Plasma processing apparatus  
An apparatus, which performs a plasma process on a target substrate by using plasma, includes first and second electrodes in a process chamber to oppose each other. An RF field, which turns a...
7524397 Lower electrode design for higher uniformity  
A plasma processing system for processing a substrate is disclosed. The plasma processing system includes a process chamber within which a plasma is both ignited and sustained for processing. The...
7524395 Plasma chamber having plasma source coil and method for etching the wafer using the same  
A plasma chamber having a plasma source coil includes a chamber body, a plasma source coil, and an edge bushing. The chamber body includes a reaction space, which is limited by a sidewall, a lower...
7520244 Plasma treatment apparatus  
A plasma treatment apparatus for thin-film deposition includes a reactor chamber; a pair of parallel-plate electrodes disposed inside the chamber; and a radio-frequency power supply system used for...
7520957 Lid assembly for front end of line fabrication  
A lid assembly for semiconductor processing is provided. In at least one embodiment, the lid assembly includes a first electrode comprising an expanding section that has a gradually increasing...
7517437 RF powered target for increasing deposition uniformity in sputtering systems  
A method and apparatus for sputter depositing a film on a substrate is disclosed. By providing a superimposed RF bias over a DC bias, plasma ionization is increased. In order to increase the...
7513954 Plasma processing apparatus and substrate mounting table employed therein  
A plasma processing apparatus includes a processing container for receiving a substrate to be processed and processing the substrate by a plasma of a processing gas, a substrate mounting table,...
7484473 Suspended gas distribution manifold for plasma chamber  
A gas inlet manifold for a plasma chamber having a perforated gas distribution plate suspended by a side wall comprising one or more sheets. The sheets preferably provide flexibility to alleviate...
7485205 Method, arrangement and electrode for generating an atmospheric pressure glow plasma (APG)  
Method of generating an atmospheric pressure glow discharge plasma (APG), wherein said plasma is generated in a discharge space formed between at least one first electrode surface and at least one...
7481903 Processing device and method of maintaining the device, mechanism and method for assembling processing device parts, and lock mechanism and method for locking the lock mechanism  
A processing device in which maintenance can be easily carried out and a burden on a worker can be reduced, and a method of maintaining the device are provided. An upper electrode unit 106 ...
7467598 System for, and method of, etching a surface on a wafer  
First and second electrodes at opposite ends and magnets between the electrodes define an enclosure. Inert gas (e.g. argon) molecules pass into the enclosure through an opening near the first...
7455735 Width adjustable substrate support for plasma processing  
An electrode assembly for use in a plasma processing system that includes removable rails that are adjustable for reconfiguring the electrode to accommodate substrates of different widths. The...
7444955 Apparatus for directing plasma flow to coat internal passageways  
An apparatus for coating surfaces of a workpiece is configured to establish a pressure gradient within internal passageways through the workpiece, so that the coating within the internal...
7442273 Apparatus using hybrid coupled plasma  
A hybrid coupled plasma type apparatus includes: a chamber having a gas-injecting unit; an electrostatic chuck in the chamber; an insulating plate over the gas-injecting unit; a high frequency...
7430986 Plasma confinement ring assemblies having reduced polymer deposition characteristics  
Plasma confinement ring assemblies are provided that include confinement rings adapted to reach sufficiently high temperatures on plasma-exposed surfaces of the rings to avoid polymer deposition on...
7426900 Integrated electrostatic inductive coupling for plasma processing  
An integrated electrostatic inductively-coupled (i-ESIC) device is provided for plasma processing that may be used as a primary or secondary source for generating a plasma to prepare substrates...
7415940 Plasma processor  
This invention includes a first filter ( 27 ) connected between a susceptor ( 21 ) and ground and having a variable impedance, a sensor ( 28 ) for detecting an electrical signal based on the state...
7404874 Method and apparatus for treating wafer edge region with toroidal plasma  
Method and apparatus for treating an edge region of a wafer. A toroidal shaped plasma cavity has an inner diameter which is slightly less than the diameter of the wafer being treated so that only...
7387081 Plasma reactor including helical electrodes  
A device for forming an ion sheath in a plasma to deposit coatings on a non-conducting substrate. The device comprises a tubular reaction chamber having an outer surface wound helically with a...
7381291 Dual-chamber plasma processing apparatus  
A dual-chamber plasma processing apparatus comprises two reaction spaces which are equipped with different gas inlet lines and different RF systems. Each reaction space is provided with an RF wave...
7347915 Plasma in-situ treatment of chemically amplified resist  
A method for creating semiconductor devices by etching a layer over a wafer is provided. A photoresist layer is provided on a wafer. The photoresist layer is patterned. The wafer is placed in a...
7337745 Electrode, susceptor, plasma processing apparatus and method of making the electrode and the susceptor  
A susceptor 24 includes a heater 38 disposed in a planar state, upper and lower ceramic-metal composites 40 A and 40 B disposed so as to sandwich the heater 38 from above and from below,...
7318879 Apparatus to manufacture semiconductor  
An apparatus to manufacture a semiconductor includes a plasma-limiting device to limit a plasma region in a reaction chamber. The plasma-limiting device includes a first limiting device to limit...
7316761 Apparatus for uniformly etching a dielectric layer  
Apparatus for plasma etching a layer of material upon a substrate comprising an anode having a first region protruding from a second region, wherein the second region defines a plane and the first...
7306707 Adaptable processing element for a processing system and a method of making the same  
The present invention presents an adaptable processing element for use in a processing system having multiple configurations. The processing element comprises a primary component and at least one...
7296534 Hybrid ball-lock attachment apparatus  
The present invention uses hybrid ball-lock devices as an alternate for threaded fasteners. Parts of the fastener exposed directly to the plasma act as a shield for the remaining pieces of the...
7294283 Penning discharge plasma source  
The preferred embodiments described herein provide a Penning discharge plasma source. The magnetic and electric field arrangement, similar to a Penning discharge, effectively traps the electron...
7288166 Plasma processing apparatus  
A plasma processing apparatus for manufacturing a semiconductor device includes an apparatus for applying bias powers to a substrate to be processed and a material adjacent to the substrate, an...
7281491 Dielectric-coated electrode, plasma discharge treatment apparatus and method for forming thin film  
A dielectric-coated electrode having a conductive base material coated with a dielectric on a surface thereof, the dielectric including a first metal atom and a second metal atom. As for an ionic...
7282111 System and method for monitoring particles contamination in semiconductor manufacturing facilities  
Provided is a particle monitoring system capable of detecting a level of polymer particle contamination on inner walls of a process chamber. Also disclosed is a method of monitoring the level of...
7273533 Plasma processing system with locally-efficient inductive plasma coupling  
An inductively coupled plasma source is provided with a peripheral ionization source for producing a high-density plasma in a vacuum chamber for semiconductor wafer coating or etching. The source...
7270713 Tunable gas distribution plate assembly  
A gas distribution plate assembly and a method for distributing gas in a processing chamber are provided. In one embodiment, a gas distribution plate assembly includes a tuning plate coupled to a...
7255773 Plasma processing apparatus and evacuation ring  
A plasma processing apparatus having an evacuation ring with high plasma resistance and capable of minimizing abnormal discharge is provided. A processing chamber 100 includes a ceiling unit 110...
7217337 Plasma process chamber and system  
The present invention relates to a plasma process chamber, which includes: an upper housing having a gas inlet connected to a gas source, and a gas shower head placed in the upper housing; and a...
7204913 In-situ pre-coating of plasma etch chamber for improved productivity and chamber condition control  
A semiconductor processing chamber having a silicon containing pre-coat is provided. The chamber includes a top electrode in communication with a power supply and a processing chamber defined...
Matches 1 - 50 out of 233 1 2 3 4 5 >