Matches 151 - 200 out of 233 < 1 2 3 4 5 >
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6106659 Treater systems and methods for generating moderate-to-high-pressure plasma discharges for treating materials and related treated materials  
Continuous-feed plasma treater systems are designed to treat continuous substrates, such as webs or films, by continuously feeding the substrates through an enclosure having a plasma discharge that...
6063235 Gas discharge apparatus for wafer etching systems  
A novel gas discharge apparatus for use in a plasma etching system is disclosed. Several components of the gas discharge apparatus including the annular outer chimney, annular outer chimney clamp...
6063203 Susceptor for plasma CVD equipment and process for producing the same  
Provided are a susceptor for a plasma CVD equipment, characterized in that the surface of the susceptor has raised and depressed portions which are continuously formed, and a steep protrusion is...
6010636 Electrode with domes for plasma focusing  
An improved anode design, incorporating domes, for plasma reactors enhances plasma density at the anode. The domes give rise to a high-divergence, three-dimensional electric field distribution that...
5996528 Method and apparatus for flowing gases into a manifold at high potential  
A reactor for plasma CVD or plasma etch is provided with a first electrode held to ground potential which supports the workpiece, e.g., a semiconductor wafer. A second electrode is spaced from the...
5990016 Dry etching method and apparatus for manufacturing a semiconductor device  
A dry etching method and apparatus improves the uniformity of etching a wafer in the manufacture of a semiconductor device. The dry etching apparatus has a susceptor supporting the wafer, a cooling...
5970907 Plasma processing apparatus  
To improve the processing rate and uniformity in a plasma processing for a substrate having a relatively large area, a plasma processing apparatus includes a reaction vessel which has a portion...
5961772 Atmospheric-pressure plasma jet  
Atmospheric-pressure plasma jet. A γ-mode, resonant-cavity plasma discharge that can be operated at atmospheric pressure and near room temperature using 13.56 MHz rf power is described. Unlike...
5938854 Method and apparatus for cleaning surfaces with a glow discharge plasma at one atmosphere of pressure  
The surface of a workpiece is cleaned by generating a steady-state one atmosphere glow discharge plasma above the surface of the workpiece. The use of one atmosphere, uniform glow discharge plasmas...
5904487 Electrode reshaping in a semiconductor etching device  
An electrode reshaping process and apparatus is provided for use in a semiconductor etching device. A wafer is place between upper and lower electrodes of the semiconductor etching device. The...
5902494 Method and apparatus for reducing particle generation by limiting DC bias spike  
A method and apparatus for preventing particles from dislodging from the interior of a process chamber by preventing DC bias spikes. Such DC bias spikes can be caused by variations in the power or...
5900104 Plasma system for enhancing the surface of a material  
A housing is provided which is positionable adjacent a surface of a material to be treated. The housing and the surface of the material cooperate to form a reaction chamber. An exposure environment...
5846329 Plasma processing apparatus  
A plasma processing apparatus has first and second electrodes disposed around a tubular chamber for generating a plasma. Each of the first and second electrodes comprises a plurality of web-shaped...
5811021 Plasma assisted chemical transport method and apparatus  
A plasma assisted chemical transport system for additive or subtractive shaping of a substrate surface employs a plasma head (30) that generates a plasma (34) and is caused to scan the surface of a...
5804089 Plasma processing apparatus and method  
A plasma processing apparatus includes a vacuum container accommodating a to-be-processed substrate. A vacuum discharge device discharges gas from the container, and a gas feed device feeds a gas...
5718769 Plasma processing apparatus  
In a plasma processing method and apparatus for carrying out plasma processing by supplying a high-frequency power of 20 MHz to 450 MHz to cause discharge to take place between a first electrode...
5716485 Electrode designs for controlling uniformity profiles in plasma processing reactors  
Electrode designs for reducing the problem of non-uniform etch in large diameter substrates are presented. The electrode opposite the substrate being etched in a plasma reactor can be tailored as...
5683540 Method and system for enhancing the surface of a material for cleaning, material removal or as preparation for adhesive bonding or etching  
A system and process for enhancing the surface of a material for cleaning, material removal or preparation for adhesive bonding or etching. An environment is provided which includes a skin region...
5656123 Dual-frequency capacitively-coupled plasma reactor for materials processing  
The present invention is directed to a dual frequency capacitively-coupled plasma apparatus for materials processing. According to a first aspect of the present invention, a dual frequency triode...
5628869 Plasma enhanced chemical vapor reactor with shaped electrodes  
A semiconductor integrated circuit is made by a process including the formation on a surface of a semiconductor integrated circuit processing wafer of a layer of material applied to the wafer by...
5597438 Etch chamber having three independently controlled electrodes  
An etch chamber for anisotropic and selective etching of a semiconductor wafer contains a dielectric window and an externally located first electrode member adjacent to the dielectric window for...
5567255 Solid annular gas discharge electrode  
Gas discharge apparatus comprising an annular gas-emitting electrode for use with wafer etching systems, and the like. The gas discharge apparatus comprises a housing and an annular electrode...
5560777 Apparatus for making a semiconductor  
An apparatus for making a semiconductor at atmospheric pressure having a first electrode and second electrode which are adapted to receive an RF voltage to perform corona discharge, the first...
5549780 Method for plasma processing and apparatus for plasma processing  
An apparatus for generating plasma of helium mainly-contained gas added with halogen element using high-frequency energy which is applied between concentrically-arranged electrodes to conduct an...
5534751 Plasma etching apparatus utilizing plasma confinement  
Plasma etching apparatus includes a stack of quartz rings that are spaced apart to form slots therebetween and that are positioned to surround an interaction space between two electrodes of the...
5527417 Photo-assisted CVD apparatus  
A photo-assisted CVD apparatus including a reaction chamber for storing a substrate, an inlet port for feeding a source gas into the reaction chamber, a light source for radiating light on the...
5474640 Apparatus for marking a substrate using ionized gas  
An apparatus suitable for marking a substrate comprises a holder for holding a substrate and a ground for electrically grounding the substrate. At least one needle electrode has a tip located...
5474649 Plasma processing apparatus employing a textured focus ring  
The invention is directed to a focus ring for surrounding a workpiece/surface substrate during plasma processing comprising a hollow annular assembly comprised of electrically insulating material...
5435880 Plasma processing apparatus  
A plasma processing apparatus for processing a workpiece such as a semiconductor wafer in a plasma includes a downstream- or coaxial-type chamber for housing the workpiece. A first sheet-like...
5433820 Method and apparatus for dry process fluxing  
In a method of dry process fluxing at least one surface of a metallic article, the surface to be fluxed is treated with a plasma at atmospheric pressure of a gaseous mixture comprising hydrogen and...
5429705 Apparatus for coating and/or etching substrates in a vacuum chamber  
Apparatus for the coating and etching of substrates in a vacuum chamber (4), includes a cathode (17, 17') having a target (18, 18'), and a rotatable structure (8) shaped as an essentially...
5399254 Apparatus for plasma treatment  
The invention concerns an apparatus for the plasma treatment of substrates in a plasma discharge excited by a high frequency between two electrodes 3, 8 to which power is supplied by a high...
5397420 Fine structure forming device  
A micro machining apparatus forms a high-aspect structure having an optional depth in a workpiece at low cost. The apparatus applies high-frequency electric power to the workpiece and a machining...
5383984 Plasma processing apparatus etching tunnel-type  
A substrate processing apparatus comprising a process tube for enclosing a plurality of semiconductor wafers, injectors for introducing process gas into the process tube, a vacuum pump for...
5376224 Method and apparatus for non-contact plasma polishing and smoothing of uniformly thinned substrates  
A plasma is used in conjunction with a plasma assisted chemical etching material removal tool 10 to rapidly and precisely polish and smooth a substrate without mechanically contacting the surface....
5372674 Electrode for use in a plasma assisted chemical etching process  
The electrode (11) of the present invention is used in a Plasma Assisted Chemical Etching process and comprises an inner member (47) surrounded by an outer member (45) defining a gap (77)...
5370737 Vacuum treatment apparatus comprising annular treatment chamber  
A vacuum treatment apparatus for workpieces includes an annular treatment chamber having inner and outer surrounding walls and top and bottom walls. A carrier for a multitude of workpieces is...
5366585 Method and apparatus for protection of conductive surfaces in a plasma processing reactor  
An apparatus and method for protecting conductive, typically metallic, walls (212) of a plasma process chamber (200) from accumulation of contaminants thereon and from reaction with a gas plasma...
5336355 Methods and apparatus for confinement of a plasma etch region for precision shaping of surfaces of substances and films  
A reactor 10 having a vacuum housing 30 which encloses a plasma chamber 14 is used to perform local plasma assisted chemical etching on an etchable substrate 12. The chamber 14 is movable and is...
5312510 Apparatus for optimally scanning a two-dimensional surface of one or more objects  
An apparatus for optimally scanning a surface of one or more semiconductor wafers undergoing a chemical etching process, comprising: (a) means for registering the semiconductor wafers to a wafer...
5304278 Apparatus for plasma or reactive ion etching and method of etching substrates having a low thermal conductivity  
Disclosed is a vacuum reactor for etching substrates having a low thermal conductivity to a high degree of etch rate uniformity, wherein the substrates to be etched are arranged in a holder at a...
5298103 Electrode assembly useful in confined plasma assisted chemical etching  
An electrode assembly (10) for use in confined plasma assisted chemical etching includes an electrode (16) having a D.C. voltage source (46) connected thereto in addition to a source (60) of R. F....
5292396 Plasma processing chamber  
Disclosed herein is a coaxial feeding-type plasma processing chamber or an opposed electrode-type plasma processing chamber using an Etch-tunnel comprising: a cylindrical treatment chamber having a...
5292400 Method and apparatus for producing variable spatial frequency control in plasma assisted chemical etching  
A reactor 10 having a vacuum housing 30 which encloses a plurality of plasma chambers 14a, 14b is used to perform local plasma assisted chemical etching on an etchable substrate 12. The chambers...
5292394 Apparatus for large-area ionic etching  
An evacuable tank having gas inlet and gas outlet openings, with at least one large-area anode at ground potential and a cathode provided as a substrate holder disposed substantially parallel...
5284547 Plasma-process system with batch scheme  
Ashing or etching is performed in a plasma surface-process apparatus and, e.g., a CO concentration of a discharge gas from the apparatus is monitored by a CO monitor. Since the generated CO...
5248371 Hollow-anode glow discharge apparatus  
Hollow-anode glow discharge apparatus in the form of two-electrode and three-electrode reactors provide, in various embodiments, improved uniformity, efficiency and low-pressure substrate surface...
5244554 Method of producing recording media and its apparatus  
A method of producing recording media which comprises steps of arranging substrates for recording media on a carrier which is purified by etching with a plasma state gas; and forming a plurality of...
5238532 Method and apparatus for removal of subsurface damage in semiconductor materials by plasma etching  
A high pressure plasma is used in conjunction with a plasma assisted chemical etching material removal tool 10 to rapidly remove subsurface damage from a substrate without mechanically contacting...
5236536 Apparatus for surface treatment by corona discharge  
Apparatus for treating the surface of a body by corona discharge, the apparatus comprising: a reaction enclosure through which said body to be treated can run along a "through" axis; an...
Matches 151 - 200 out of 233 < 1 2 3 4 5 >