Matches 101 - 150 out of 233 < 1 2 3 4 5 >
Match Document Document Title
6777880 Device for specific particle manipulation and deposition  
A process for manipulating particles distributed substantially non-uniformly in a plasma of a carrier or reaction gas, wherein Coulomb interaction between the particles is so low that the particles...
6767429 Vacuum processing apparatus  
In a plasma CVD apparatus for applying a film deposition process to a semiconductor wafer (W), a wafer placement stage ( 3 ) is provided at a center of a vacuum chamber ( 2 ). The placement stage (...
6758941 Plasma processing unit, window member for plasma processing unit and electrode plate for plasma processing unit  
A plasma processing unit of the invention includes: a processing container, and a first electrode disposed in the processing container. The first electrode has: a plurality of gas-dispersion holes...
6726803 Multi-sectional plasma generator with discharge gaps between multiple elements forming a plasma discharge cavity  
A discharge tube is assembled from three sections formed of metal. A first discharge tube element and a second discharge tube element are connected with an insulator for forming a discharging gap...
6726804 RF power delivery for plasma processing using modulated power signal  
A plasma processing apparatus and a method of operating a plasma processing apparatus are disclosed. In one embodiment, a first RF signal at a carrier frequency and a second RF signal at a second...
6723202 Worktable device and plasma processing apparatus for semiconductor process  
A plasma etching apparatus includes a worktable disposed in a hermetic process chamber. The worktable has a main surface for placing a wafer thereon, and a sub-surface for placing a focus ring...
6712927 Chamber having process monitoring window  
A process chamber 35 for processing a substrate 30 and monitoring the process conducted on the substrate 30, comprises a support 45, a gas distributor, and an exhaust 85. The process...
6705245 Apparatus for forming polymer continuously on the surface of metal by DC plasma polymerization  
The present invention relates to an apparatus for forming polymer by DC plasma polymerization wherein a substrate is used as an electrode by applying a power to the substrate and an opposite...
6676803 Semiconductor device fabricating equipment using radio frequency energy  
A semiconductor device fabricating equipment using radio frequency energy is capable of preventing a wafer from being polluted by various kinds of polymers deposited indiscriminately on the...
6673197 Chemical plasma cathode  
A method and apparatus for generating a plasma in a gas using a thermal source and a heat source in a common reaction zone. A process gas is flowed to a reaction zone and heated with a thermal...
6669807 Method for reactive ion etching and apparatus therefor  
An apparatus for reactive-ion etching including a reaction vessel and metallic parts disposed in the reaction vessel, the whole or a part of which includes at least one metallic material selected...
6666923 Plasma polymerizing apparatus having an electrode with a lot of uniform edges  
The present invention relates to a plasma polymerizing apparatus comprises a polymerizing chamber polymerizing surface of substrates by high voltage discharge, a discharge electrode installed...
6663748 Method of forming a thin film  
A method of maintaining a plasma electrode and a substrate holder in a deposition chamber of a plasma enhanced chemical vapor deposition system is provdied. Each of the plasma electrode and the...
6656849 Plasma reactor  
A plasma reactor is provided for achieving extension of etching parameters to reduce charge-up shape anomaly and to improve selectivity, uniformity and workability in a dry etching process. An RF...
6656323 Plasma processing apparatus  
For obtaining uniformity of processing by controlling difference in impedance between a plurality of processing chambers, in a plasma processing apparatus, a conductor 7 of an attachment portion ...
6649020 Plasma processing apparatus  
A plasma processing method comprising the steps of arranging a substrate on a film is to be formed in a reaction chamber capable of being vacuumed and evacuating the inside of the reaction chamber...
6642662 Plasma apparatus  
A plasma apparatus is disclosed, wherein an RF feed through having a stick type not a wire type is used. Accordingly, even if heat is generated at the RF feed through by an applied RF, heat is more...
6635144 Apparatus and method for detecting an end point of chamber cleaning in semiconductor equipment  
Apparatus for processing semiconductor wafers includes a processing chamber, a chuck within the chamber for supporting a wafer during processing, a fiberoptic cable having a first end positioned at...
6631693 Absorptive filter for semiconductor processing systems  
In one embodiment, an absorptive filter network is provided between an RF generator and a semiconductor processing reactor. The absorptive filter network includes an absorptive filter circuit which...
6632323 Method and apparatus having pin electrode for surface treatment using capillary discharge plasma  
A method and an apparatus for treating a workpiece using a plasma are disclosed in the present invention. In treating a workpiece using a plasma, the apparatus includes at least one pin electrode...
6623596 Plasma reactor having an inductive antenna coupling power through a parallel plate electrode  
A plasma reactor for processing a workpiece includes a reactor enclosure defining a processing chamber, a base within the chamber for supporting the workpiece during processing thereof, a...
6585851 Plasma etching device  
A plasma etching device which has an auxiliary electrode enabling realization of a uniform plasma density of generated plasma on the surface of a base and which enables uniform etching with respect...
6562189 Plasma reactor with a tri-magnet plasma confinement apparatus  
A plasma reactor includes a chamber adapted to support an evacuated plasma environment, a passageway connecting the chamber to a region external of the chamber, the passageway being defined by...
6558507 Plasma processing apparatus  
A plasma processing apparatus has a substrate holder, arranged in a vessel which can be reduced in pressure, for placing a substrate to be processed there on, a process gas fed into the reaction...
6554952 Method and apparatus for etching a gold metal layer using a titanium hardmask  
Disclosed is an inventive method for etching a gold metallization in a plasma processing chamber. The method includes introducing a substrate having a gold layer and an overlying titanium hardmask...
6551444 Plasma processing apparatus and method of processing  
A plasma processing apparatus and a method of plasma processing using the same obviate a problem in which an excessive amount of processing gas is supplied momentarily during an initial stage of...
6527911 Configurable plasma volume etch chamber  
A plasma processing chamber is provided. The plasma processing chamber includes a bottom electrode configured to support a substrate and a top electrode located over the bottom electrode. The...
6524430 Apparatus for fabricating a semiconductor device  
An apparatus for fabricating a semiconductor device comprising: a reactor for providing a reaction region separated from outside; a pedestal arranged within said reactor to support a semiconductor...
6524431 Apparatus for automatically cleaning mask  
An apparatus for automatically cleaning a mask applied to a mask cleaning step after an evaporation process. An RF plasma is used to clean the mask. By isolating the RF plasma generator, the wafer...
6513452 Adjusting DC bias voltage in plasma chamber  
A method of adjusting the cathode DC bias in a plasma chamber for fabricating semiconductor devices. A dielectric shield is positioned between the plasma and a selected portion of the electrically...
6502530 Design of gas injection for the electrode in a capacitively coupled RF plasma reactor  
A plasma reactor has a reactor vessel and a pair of electrodes in the form of spaced apart and oppositely disposed metallic surfaces defining therebetween a plasma discharge space. At least one of...
6494958 Plasma chamber support with coupled electrode  
A process chamber 110 capable of processing a substrate 30 in a plasma of process gas. The chamber 110 comprises a support 200 having a dielectric 210 covering an electrode 220 and a...
6490993 Rotating device for plasma immersion supported treatment of substrates  
A rotary drive which is suitable in treatment of three-dimensional workpieces. In this rotary apparatus, only the removably mounted rotatable rods that serve as sample holders are connected to high...
6464793 Semiconductor crystal growth apparatus  
A substrate is heated in a crystal growth vessel evacuated to a ultrahigh vacuum, and gases containing component elements of a crystal to be grown on the substrate are introduced into the vessel...
6451160 Plasma generation apparatus with a conductive connection member that electrically connects the power source to the electrode  
A plasma generation apparatus includes a high-frequency power source section; a reaction container to which a material gas is to be supplied; a pair of electrodes that are provided in the reaction...
6417111 Plasma processing apparatus  
A plasma processing method includes introducing at least one first processing gas into a processing chamber including a mounting stage supporting a substrate having a surface; generating a plasma...
6415736 Gas distribution apparatus for semiconductor processing  
A gas distribution system for semiconductor processing includes a contoured surface to achieve a desired gas distribution on the backside of a showerhead. The system can include one or more gas...
6413358 Method and apparatus for improving etch uniformity in remote source plasma reactors with powered wafer chucks  
This invention is a hardware modification which permits greater uniformity of etching to be achieved in a high-density-source plasma reactor (i.e., one which uses a remote source to generate a...
6406590 Method and apparatus for surface treatment using plasma  
A method for treating a surface of a sample using plasma, including the steps of placing the sample in a predetermined atmosphere, locally supplying a reaction gas from a reaction gas supply...
6391146 Erosion resistant gas energizer  
An apparatus and method for reducing hazardous gases exhausted from a process chamber 25 includes an effluent gas treatment system 200 with a gas energizing reactor 210 with an erosion...
6376385 Method of manufacturing assembly for plasma reaction chamber and use thereof  
An electrode assembly for a plasma reaction chamber wherein processing of a semiconductor substrate such as a single wafer can be carried out, a method of manufacture of the electrode assembly and...
6352611 Ceramic composition for an apparatus and method for processing a substrate  
A ceramic composition of matter for a process kit and a dielectric window of a reactor chamber wherein substrates are processed in a plasma of a processing gas. The ceramic composition of matter...
6344106 Apparatus, and corresponding method, for chemically etching substrates  
An apparatus, and a corresponding method, for chemically etching the copper foil of a copper foil-clad substrate are disclosed. Significantly, this apparatus includes fluid jet injectors which...
6308654 Inductively coupled parallel-plate plasma reactor with a conical dome  
A plasma reactor appropriate for fabrication, especially etching, of semiconductor integrated circuits and similar processes in which the chamber has a top comprising a truncated conical dome and,...
6287981 Electrode for generating a plasma and a plasma processing apparatus using the same  
A plasma processing apparatus includes a plasma generating electrode containing at least one protrusion for improving the plasma density and uniformity. The apparatus may be a plasma dry etching...
6273023 Plasma processing apparatus capable of reliably, electrostatically attracting and holding and thus fixing semiconductor wafer  
A plasma processing apparatus capable of attracting and holding a semiconductor wafer reliably once the processing of the semiconductor wafer is started includes: a vacuum chamber; an electrode...
6264788 Plasma treatment method and apparatus  
A plasma treatment method comprising exhausting a process chamber so as to decompress the process chamber, mounting a wafer on a suscepter, supplying a process gas to the wafer through a shower...
6221202 Efficient plasma containment structure  
Plasma containment is achieved within a region by a containment plate while gas is allowed to flow through this region by openings in the plate. The openings in the plate are larger in two of the...
6194835 Device for producing plasma  
A device for producing plasma includes an isolating pipe formed of an isolating material, a rod-shaped conductor positioned inside of the pipe, the rod-shaped conductor having an inner diameter...
6123805 Discharge electrode and process chamber of dry etching facility for manufacturing semiconductor devices  
A process chamber of a dry etching facility for manufacturing semiconductor devices uniformly forms the ion density of plasma over a wafer, and reduces the volume of the process chamber by...
Matches 101 - 150 out of 233 < 1 2 3 4 5 >