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8128756 Technique for the growth of planar semi-polar gallium nitride  
A method for growing planar, semi-polar nitride film on a miscut spinel substrate, in which a large area of the planar, semi-polar nitride film is parallel to the substrate's surface. The planar...
7988794 Semiconductor device and method  
A semiconductor device having a topology adjustment and a method for adjusting the topology of a semiconductor device. The semiconductor device includes a semiconductor wafer having first and...
7879455 High-temperature solder, high-temperature solder paste and power semiconductor using same  
The present invention intends to provide a power semiconductor device using a high-temperature lead-free solder material, the high-temperature lead-free solder material having the heat resistant...
7790574 Boron diffusion in silicon devices  
Disclosed are various embodiments that include a process, an arrangement, and an apparatus for boron diffusion in a wafer. In one representative embodiment, a process is provided in which a boric...
7727341 Cylinder head gasket  
A gasket system is described and depicting having a gasket located between and sealing a cylinder head and a cylinder block. The gasket has a first metal layer and a second metal layer adjacent...
7727340 Inclusion of nitrogen at the silicon dioxide-silicon carbide interface for passivation of interface defects  
In one aspect the present invention provides a method for manufacturing a silicon carbide semiconductor device. A layer of silicon dioxide is formed on a silicon carbide substrate and nitrogen is...
7662239 Method of producing group 3 nitride substrate wafers and group 3 nitride substrate wafers  
Quality of one-surface planar processed group 3 nitride wafers depends upon a direction of pasting of wafers on a polishing plate. Low surface roughness and high yield are obtained by pasting a...
7655099 High-k dielectric film, method of forming the same and related semiconductor device  
A high-k dielectric film, a method of forming the high-k dielectric film, and a method of forming a related semiconductor device are provided. The high-k dielectric film includes a bottom layer of...
7578891 Adhesive bonding sheet, semiconductor device using the same, and method for manufacturing such semiconductor device  
An adhesive bonding sheet having an optically transmitting supporting substrate and an adhesive bonding layer, and being used in both a dicing step and a semiconductor element adhesion step,...
7534310 Single crystal GaN substrate, method of growing single crystal GaN and method of producing single crystal GaN substrate  
A low dislocation density GaN single crystal substrate is made by forming a seed mask having parallel stripes regularly and periodically aligning on an undersubstrate, growing a GaN crystal on a...
7482068 Lightly doped silicon carbide wafer and use thereof in high power devices  
A uniform silicon carbide single crystal with either an n-type or a p-type conductivity. The crystal has a net carrier concentration less than 1015 cm−3 and a carrier lifetime of at least 50 ns a...
7446923 Semiconductor, functional device, electrochromic device, optical device, and image-taking unit  
A semiconductor comprises a compound (A) adsorbed on a surface of the semiconductor, the compound (A) having at least one lone electron pair and substantially not undergoing in oxidation-reduction...
7344604 LED and a lighting apparatus using the LED  
Disclosed herein is a LED and a lighting apparatus, which employs a LED as a light source of low power and high efficiency for an optical projection system. The lighting apparatus comprises a...
7220324 Technique for the growth of planar semi-polar gallium nitride  
A method for growing planar, semi-polar nitride film on a miscut spinel substrate, in which a large area of the planar, semi-polar nitride film is parallel to the substrate's surface. The planar...
7186302 Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition  
A method for the fabrication of nonpolar indium gallium nitride (InGaN) films as well as nonpolar InGaN-containing device structures using metalorganic chemical vapor deposition (MOVCD). The method...
RE39484 Process for the production of thin semiconductor material films  
Process for the preparation of thin monocrystalline or polycrystalline semiconductor material films, characterized in that it comprises subjecting a semiconductor material wafer having a planar...
7118934 Porous substrate for epitaxial growth, method for manufacturing same, and method for manufacturing III-nitride semiconductor substrate  
A porous substrate for epitaxial growth includes an underlying layer made of III-nitride semiconductor which is grown on a sapphire substrate, a void-formation preventive layer which is grown on...
7101444 Defect-free semiconductor templates for epitaxial growth  
A semiconductor device includes at least one defect-free epitaxial layer. At least a part of the device is manufactured by a method of fabrication of defect-free epitaxial layers on top of a...
7097718 Single crystal silicon wafer having an epitaxial layer substantially free from grown-in defects  
Epitaxial wafers comprising a single crystal silicon substrate comprising agglomerated vacancy defects and having an axially symmetric region in which silicon self-interstitials are the predominant...
7063751 Semiconductor substrate formed by epitaxially filling a trench in a semiconductor substrate with a semiconductor material after smoothing the surface and rounding the corners  
A trench is formed in a semiconductor substrate through a mask composed of a silicon oxide film formed on the semiconductor substrate. Then, an edge portion at an opening portion of the mask is...
7041178 Method for low temperature bonding and bonded structure  
A method for bonding at low or room temperature includes steps of surface cleaning and activation by cleaning or etching. The method may also include removing by-products of interface...
7030451 Method and apparatus for performing nickel salicidation  
A method and apparatus for performing nickel salicidation is disclosed. The nickel salicide process typically includes: forming a processed substrate including partially fabricated integrated...
7018920 Composite sacrificial material  
A composite sacrificial material is deposited in a void or opening in a dielectric layer on a semiconductor substrate. The composite sacrificial material includes a polymeric or oligomeric matrix...
7018484 Semiconductor-on-insulator silicon wafer and method of formation  
A method of fabricating a semiconductor-on-insulator semiconductor wafer is described that includes providing first and second silicon substrates. A first thin layer of silicon dioxide is formed on...
7011717 Method for heat treatment of silicon wafers and silicon wafer  
According to the present invention, there are provided a method for heat treatment of silicon wafers wherein a silicon wafer is subjected to a heat treatment at a temperature of from 1000° C. to ...
6997776 Process for producing a semiconductor wafer  
The invention relates to a process for producing a semiconductor wafer by simultaneous polishing of a front surface and a back surface of the semiconductor wafer with a polishing fluid between...
6930026 Method of forming a semiconductor wafer having a crystalline layer thereon containing silicon, germanium and carbon  
A Si substrate 1 with a SiGeC crystal layer 8 deposited thereon is annealed to form an annealed SiGeC crystal layer 10 on the Si substrate 1. The annealed SiGeC crystal layer includes a matrix...
6924240 Low dielectric constant material, insulating film comprising the low dielectric constant material, and semiconductor device  
A low dielectric constant material having excellent water resistance comprising a borazine skeleton structure represented by any one of the formulas (2) to (4): wherein R1 to R4 are independently a...
6905557 Three dimensional integrated device  
A device integration method and integrated device. The method includes the steps of polishing surfaces of first and second workpieces each to a surface roughness of about 5-10 Å. The polished s...
6884303 Process of thinning and blunting semiconductor wafer edge and resulting wafer  
A wafer having a rounded edge is thinned to 100 microns or less, producing a tapered razor like edge. The edge is ground to blunt it and reduce danger to personnel and equipment during handling of...
6864579 Carrier with a metal area and at least one chip configured on the metal area  
A carrier has a metal area that is essentially composed of copper. A chip has a rear side metallization layer. A buffer layer, essentially composed of nickel and having a thickness of between 5 μm ...
6858094 Silicon wafer and silicon epitaxial wafer and production methods therefor  
The present invention provides a silicon wafer having a DZ layer near a surface and an oxide precipitate layer in a bulk portion, wherein interstitial oxygen concentrations of the DZ layer, the...
6855996 Electronic device substrate structure and electronic device  
An electronic device substrate structure including a substrate 2, a metal thin film 4 as a (111)-oriented film of a face-centered cubic structure or as a (0001)-oriented film of a hexagonal closest...
6833570 Structure comprising an insulated part in a solid substrate and method for producing same  
A structure having a first part and at least one second part. The second part is electrically insulated from the first part and the parts are formed in the same wafer of a material. The first and...
6822332 Fine line circuitization  
A circuitized substrate and a method of making the circuitized substrate is provided. The circuitized substrate includes a substrate having a substantially planar upper surface and a conductive...
6746939 Production method for solid imaging device  
White defects caused by a dark-current of a solid-state imaging device is reduced by effectively bringing out gettering capability of a buried getter sink layer. A buried getter sink layer is...
6649989 Micromechanical diaphragm  
A micromechanical diaphragm is described which has a partially n-doped p-substrate on its surface and a top n-epitaxial layer, one or more n-epitaxial layers which are p-doped in the diaphragm area...
6630410 Self-aligned PECVD etch mask  
A method for forming an etched feature in a substrate such as an insulator layer of a semiconductor wafer is provided. In one embodiment, the method includes initially etching a substrate layer...
6596095 Epitaxial silicon wafer free from autodoping and backside halo and a method and apparatus for the preparation thereof  
A single crystal silicon wafer with a back surface free of an oxide seal and substantially free of a chemical vapor deposition process induced halo and an epitaxial silicon layer on the front...
6589362 Zinc oxide semiconductor member formed on silicon substrate  
The surface of a silicon substrate is covered with a natural oxide film having a thickness of several tens of angstroms. In an initial process, the natural oxide film is removed with hydrogen...
6583034 Semiconductor structure including a compliant substrate having a graded monocrystalline layer and methods for fabricating the structure and semiconductor devices including the structure  
High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the...
6565649 Epitaxial wafer substantially free of grown-in defects  
The present invention is directed to an epitaxial wafer comprising a single crystal silicon substrate having an axially symmetric region in which silicon self-interstitials are the predominant...
6562725 Dual damascene structure employing nitrogenated silicon carbide and non-nitrogenated silicon carbide etch stop layers  
Within a dual damascene method for forming a dual damascene aperture within a microelectronic fabrication there is employed a first etch stop layer formed of a first material and a second etch stop...
6558802 Silicon-on-silicon hybrid wafer assembly  
A hybrid silicon-on-silicon substrate. A thin film (2101) of single-crystal silicon is bonded to a target wafer (46). A high-quality bond is formed between the thin film and the target wafer during...
6551944 Process for manufacturing a semiconductor material wafer comprising single-Crystal regions separated by insulating material regions  
A process including the steps of: carrying out a directional etching in a semiconductor material body to form trenches having a first width; carrying out an isotropic etching of the semiconductor...
6552395 Higher thermal conductivity glass for SOI heat removal  
In one embodiment, the present invention relates to a method of forming a silicon-on-insulator substrate, involving the steps of providing a first silicon substrate; forming a beryllium oxide layer...
6544804 Semiconductor wafer having identification indication and method of manufacturing the same  
An identification indication is formed on a side surface of a semiconductor wafer, and thus even if various treatment processes are repeatedly conducted for forming a semiconductor circuit, or even...
6541753 Semiconductor energy detector having reinforcement  
A substrate beam 1b is formed so as to divide a membrane for enabling detection of an energy ray upon back illumination, there by suppressing distortion of the membrane and preventing defocus upon...
6534332 Method of growing GaN films with a low density of structural defects using an interlayer  
A dramatic reduction of the dislocation density in GaN was obtained by insertion of a single thin interlayer grown at an intermediate temperature (IT-IL) after the growth of an initial grown at...
6533874 GaN-based devices using thick (Ga, Al, In)N base layers  
A method of forming a (gallium, aluminum, indium) nitride base layer on a substrate for subsequent fabrication, e.g., by MOCVD or MBE, of a microelectronic device structure thereon. Vapor-phase...
Matches 1 - 50 out of 1345 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 >