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7344604 LED and a lighting apparatus using the LED  
Disclosed herein is a LED and a lighting apparatus, which employs a LED as a light source of low power and high efficiency for an optical projection system. The lighting apparatus comprises a...
7063751 Semiconductor substrate formed by epitaxially filling a trench in a semiconductor substrate with a semiconductor material after smoothing the surface and rounding the corners  
A trench is formed in a semiconductor substrate through a mask composed of a silicon oxide film formed on the semiconductor substrate. Then, an edge portion at an opening portion of the mask is...
7041178 Method for low temperature bonding and bonded structure  
A method for bonding at low or room temperature includes steps of surface cleaning and activation by cleaning or etching. The method may also include removing by-products of interface...
6930026 Method of forming a semiconductor wafer having a crystalline layer thereon containing silicon, germanium and carbon  
A Si substrate 1 with a SiGeC crystal layer 8 deposited thereon is annealed to form an annealed SiGeC crystal layer 10 on the Si substrate 1 . The annealed SiGeC crystal layer includes a...
6855996 Electronic device substrate structure and electronic device  
An electronic device substrate structure including a substrate 2, a metal thin film 4 as a (111)-oriented film of a face-centered cubic structure or as a (0001)-oriented film of a hexagonal...
6589362 Zinc oxide semiconductor member formed on silicon substrate  
The surface of a silicon substrate is covered with a natural oxide film having a thickness of several tens of angstroms. In an initial process, the natural oxide film is removed with hydrogen...
6583034 Semiconductor structure including a compliant substrate having a graded monocrystalline layer and methods for fabricating the structure and semiconductor devices including the structure  
High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the...
6534332 Method of growing GaN films with a low density of structural defects using an interlayer  
A dramatic reduction of the dislocation density in GaN was obtained by insertion of a single thin interlayer grown at an intermediate temperature (IT-IL) after the growth of an initial grown at...
6429098 Process for obtaining a layer of single-crystal germanium or silicon on a substrate of single-crystal silicon or germanium, respectively, and multilayer products obtained  
The process consists in depositing, by chemical vapour deposition using a mixture of silicon and germanium precursor gases, a single-crystal layer of silicon or germanium on a germanium or silicon...
6319333 Silicon-on-insulator islands  
Silicon-on-insulator (SOI) islands are formed in a silicon substrate. A first set of trenches is formed in the silicon substrate, leaving laterally-isolated rows of silicon between the trenches....
6270587 Epitaxial wafer having a gallium nitride epitaxial layer deposited on semiconductor substrate and method for preparing the same  
The present invention provides an epitaxial wafer comprising a (111) substrate of a semiconductor having cubic crystal structure, a first GaN layer having a thickness of 60 nanometers or more, a...
6265237 In-wafer testing of DFB semiconductor lasers  
A method of manufacturing and testing a laser device that facilitates in-wafer testing of the laser device includes forming the laser device on a wafer and forming a light detecting device on the...
6245161 Economical silicon-on-silicon hybrid wafer assembly  
An economical hybrid wafer utilizing a lower-quality, lower cost transfer substrate to support a higher-quality thin film. A high-quality thin film (2101) is separated from a donor wafer (2100) and...
6187687 Minimization of line width variation in photolithography  
A practical photolithographic process for use in manufacturing isolation structures in semiconductor substrates at the 0.18 μm scale uses an inorganic anti-reflective coating (ARC) layer,...
6171973 Process for etching the gate in MOS technology using a SiON-based hard mask  
A process for etching a gate conductor material in the fabrication of MOS transistors is presented. A hard mask layer composed of silicon oxynitride is formed upon a gate conductor layer. The hard...
6140209 Process for forming an SOI substrate  
A process for producing an SOI substrate is disclosed which is useful for saving resources and lowering production cost. Further, a process for producing a photoelectric conversion device such as a...
6103019 Advanced technique to grow single crystal films on amorphous and/or non-single crystal surfaces  
A method for producing a pattern of regularly spaced-apart nucleation sites and corresponding devices are disclosed. The method enables formation of a device having an amorphous or otherwise...
6059895 Strained Si/SiGe layers on insulator  
An SOI substrate and method for forming is described incorporating the steps of forming strained layers of Si and/or SiGe on a first substrate, forming a layer of Si and/or S i O 2 over the...
6045626 Substrate structures for electronic devices  
A substrate structure includes a single crystal Si substrate and a surface layer, with a buffer layer interleaved therebetween. The buffer layer includes at least one of an R--Zr family oxide thin...
6033490 Growth of GaN layers on quartz substrates  
In a method of manufacturing a semiconductor device which includes a quartz substrate having a z-cut plane of (0001) plane on a surface, a GaN film is first deposited on the surface. Finally, the...
6033489 Semiconductor substrate and method of making same  
A semiconductor substrate is provided that exhibits very low substrate resistance while also providing structural integrity and robustness to resist breakage during manufacturing. The invention...
5782997 Aluminum metallization for SiGe devices  
Single crystal aluminum is deposited on SiGe structures to form metal interconnects. Generally, a method of forming single crystal aluminum on Si (1-X) Ge X is presented, including the steps of...
5714014 Semiconductor heterojunction material  
A semiconductor heterojunction material includes a heterojunction configured by successively overlaying first, middle and third layers of semiconductor, some or all of the constituent elements of...
5705423 Epitaxial wafer  
An improved and highly productive method is proposed for the preparation of an epitaxial wafer (EPW) consisting of a single crystal silicon wafer as the substrate having a mirror-polished surface...
5685946 Method of producing buried porous silicon-geramanium layers in monocrystalline silicon lattices  
Lattices of alternating layers of monocrystalline silicon and porous silicon-germanium have been produced. These single crystal lattices have been fabricated by epitaxial growth of Si and Si--Ge...
5663583 Low-noise and power ALGaPSb/GaInAs HEMTs and pseudomorpohic HEMTs on GaAs substrate  
An epitaxial structure and method of manufacture for a field-effect transistor capable of low-noise and power applications. Preferably, the epitaxial structure includes an N-type barrier layer...
5658834 Forming B.sub.1-x C.sub.x semiconductor layers by chemical vapor deposition  
Active semiconductor devices including heterojunction diodes and thin film transistors are formed by PECVD deposition of a boron carbide thin film on an N-type substrate. The boron to carbon ratio...
5647917 Epitaxy for growing compound semiconductors and an InP substrate for epitaxial growth  
When compound semiconductor films are grown on an InP wafer having a surface near a (100) orientation hillocks tend to arise on the films. Off-angle wafers have been adopted for substrates in order...
5645684 Multilayer high vertical aspect ratio thin film structures  
This invention relates to the area of microelectromechanical systems in which electronic circuits and mechanical devices are integrated on the same silicon chip. The method taught herein allows the...
5628834 Surfactant-enhanced epitaxy  
The present invention broadly concerns layered structures of substantially-crystalline materials and processes for making such structures. More particularly, the invention concerns epitaxial growth...
5578162 Integrated composite semiconductor devices and method for manufacture thereof  
An integrated semiconductor device is formed by bonding the conductors of one fabricated semiconductor device having a substrate to the conductors on another fabricated semiconductor device having...
5540786 Light emitting material  
A novel photoluminescent material is disclosed comprising an active layer of ZnS 1 -x Te x deposited directly onto a substrate by molecular beam epitaxy. The emitted light is primarily in the blue...
5529640 Epitaxial metal-insulator-metal-semiconductor structures  
In one form of the invention, a method for the growth of an epitaxial insulator-metal structure on a semiconductor surface comprising the steps of maintaining the semiconductor surface at a...
5445897 Epitaxial wafer and process for producing the same  
In order to grow a GaAs 1 -x P x fixed-composition layer of excellent quality, which has a predetermined composition x, over a GaAs or GaP single crystal substrate, a varied-composition layer is...
5441913 Process of making a semiconductor epitaxial substrate  
A semiconductor epitaxial substrate and a process for producing the same, the semiconductor epitaxial substrate comprising a GaAs single-crystal substrate having thereon an In y Ga (1-y) As...
5421910 Intermetallic compound semiconductor thin film  
An intermetallic compound semiconductor thin film comprises thin film made of the III-V group intermetallic compound InTlSb. Preferably, the thin film is grown by a vapor phase MOCVD method.
5399206 Arsenic passivation for epitaxial deposition of ternary chalcogenide semiconductor films onto silicon substrates  
Ternary II-VI semiconductor films (16) are formed on a silicon substrate (12) by first depositing a monolayer of arsenic (14) or other Group V metal on a cleaned surface of the substrate. The...
5397429 Method of manufacturing photoluminescing porous silicon using spark erosion  
A high frequency, high voltage spark generator is used to create a large number of sparks to erode the surface of a silicon wafer to a depth of up to 100 microns. After a sufficient amount of...
5376579 Schemes to form silicon-on-diamond structure  
Processes to produce Silicon-On-Diamond (SOD) Structures. In one process, two epitaxial layers are grown on a seed silicon wafer. The first layer is an etch stop layer and the second layer is an...
5372658 Disordered crystalline semiconductor  
A semiconductor material having a disordered structure consists of a semiconductor material on which epitaxial growth is possible. The semiconductor material has an energy band structure...
5373171 Thin film single crystal substrate  
A thin film single crystal substrate useful in the production of a semiconductor, comprising a base substrate made of single crystal diamond and at least one thin film of a single crystal of a...
5372970 Method for epitaxially growing a II-VI compound semiconductor  
A method for epitaxially growing a II-VI compound semiconductor according to this invention comprises the steps of epitaxially growing a GaAs x Se 1 -x layer on a GaAs substrate and epitaxially...
5314547 Rare earth slab doping of group III-V compounds  
A semiconductor film is provided characterized by having high carrier mobility and carrier density. The semiconductor film is doped with the rare-earth element erbium so as to improve its...
5309000 Diamond films with heat-resisting ohmic electrodes  
A is a heat-resisting ohmic electrode on diamond film, including: a p-type semiconducting diamond film; a boron-doped diamond layer provided on the semiconducting diamond film; and an electrode...
5304461 Process for the selective deposition of thin diamond film by gas phase synthesis  
Thin diamond films can be selectively deposited imagewise on a substrate by gas phase synthesis. The substrate may be either a silicon substrate or a basal thin diamond film formed beforehand on a...
5302232 (111) Group II-VI epitaxial layer grown on (111) silicon substrate  
A group II-VI epitaxial layer grown on a (111) silicon substrate has a lattice mismatch which is minimized, as between the group II-VI epitaxial layer and the silicon substrate. The grown group...
5298108 Serpentine superlattice methods and devices  
The disclosed invention provides a serpentine-shaped semiconductor superlattice for novel electric and electro-optic devices. The invention comprises a stepped, or vicinal substrate, having a...
5275966 Low temperature process for producing antimony-containing semiconductor materials  
Tri-isopropylantimony is used as a source of antimony in chemical vapor deposition production of semiconductor materials. The process can be used to introduce antimony as a dopant into III/V and...
5252498 Method of forming electronic devices utilizing diamond  
A diamond thermistor is described. Surface portions of temperature sensing diamond of the thermistor are doped with impurity ions by ion implantation except for a sensing area thereof. A pair of...
5246878 Capping layer preventing deleterious effects of As--P exchange  
A III-V semiconductor heterojunction in which a capping layer (14) is formed between the two layers (10, 16) of the heterojunction to prevent any deleterious effects due to As--P exchange. When...
Matches 1 - 50 out of 177 1 2 3 4 >