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RE39484 Process for the production of thin semiconductor material films  
Process for the preparation of thin monocrystalline or polycrystalline semiconductor material films, characterized in that it comprises subjecting a semiconductor material wafer having a planar...
7030451 Method and apparatus for performing nickel salicidation  
A method and apparatus for performing nickel salicidation is disclosed. The nickel salicide process typically includes: forming a processed substrate including partially fabricated integrated...
7018920 Composite sacrificial material  
A composite sacrificial material is deposited in a void or opening in a dielectric layer on a semiconductor substrate. The composite sacrificial material includes a polymeric or oligomeric matrix...
7018484 Semiconductor-on-insulator silicon wafer and method of formation  
A method of fabricating a semiconductor-on-insulator semiconductor wafer is described that includes providing first and second silicon substrates. A first thin layer of silicon dioxide is formed on...
6905557 Three dimensional integrated device  
A device integration method and integrated device. The method includes the steps of polishing surfaces of first and second workpieces each to a surface roughness of about 5-10 Å. The polished...
6864579 Carrier with a metal area and at least one chip configured on the metal area  
A carrier has a metal area that is essentially composed of copper. A chip has a rear side metallization layer. A buffer layer, essentially composed of nickel and having a thickness of between 5 μm...
6833570 Structure comprising an insulated part in a solid substrate and method for producing same  
A structure having a first part and at least one second part. The second part is electrically insulated from the first part and the parts are formed in the same wafer of a material. The first and...
6565649 Epitaxial wafer substantially free of grown-in defects  
The present invention is directed to an epitaxial wafer comprising a single crystal silicon substrate having an axially symmetric region in which silicon self-interstitials are the predominant...
6552395 Higher thermal conductivity glass for SOI heat removal  
In one embodiment, the present invention relates to a method of forming a silicon-on-insulator substrate, involving the steps of providing a first silicon substrate; forming a beryllium oxide layer...
6551944 Process for manufacturing a semiconductor material wafer comprising single-Crystal regions separated by insulating material regions  
A process including the steps of: carrying out a directional etching in a semiconductor material body to form trenches having a first width; carrying out an isotropic etching of the semiconductor...
6340642 Process for manufacturing a silicon semiconductor device having a reduced surface recombination velocity  
A process for manufacturing a silicon semiconductor device having a reduced surface recombination velocity of charge carriers within a silicon wafer includes forming a plurality of semiconductor...
6340535 Method for the heat treatment of a ZnSe crystal substrate, heat treated substrate and light emission device  
This invention relates to a method for the heat treatment of a ZnSe crystal substrate to dope it with Al as a donor impurity, a ZnSe crystal substrate prepared by this heat treatment and a...
6322634 Shallow trench isolation structure without corner exposure  
A shallow isolation trench structure and methods of forming the same wherein the method of formation comprises a layered structure of a buffer film layer over a dielectric layer which is atop a...
6307225 Insulating material, substrate covered with an insulating film, method of producing the same, and thin-film device  
A bismuth silicate film (insulating film) 3 of Bi 2 SiO 5 oriented predominantly in the direction of (100) is formed on a Si substrate 2 and a ferroelectric thin film 4 is formed on the bismuth...
6238482 Method of producing a wafer with an epitaxial quality layer and device with epitaxial quality layer  
A method of making a wafer is provided. A first semiconductor film is formed onto a semiconductor substrate. An epitaxial film is formed onto an epitaxial wafer. The epitaxial wafer is placed with...
6193813 Utilization of SiH4 soak and purge in deposition processes  
A method of processing a substrate, such as a semiconductor wafer, in a vacuum processing chamber includes the steps of depositing a material on a surface of the substrate using a gas mixture, and...
6139647 Selective removal of vertical portions of a film  
A post-etch structure resulting in the inverse of a sidewall spacer etch, i.e. removal of the spacer. A vertical portion of a film is removed while leaving horizontal portions substantially intact....
6114052 Ingot plate made of thermoelectric material, rectangular bar cut from the ingot plate, and process of fabricating the ingot plate  
6103020 Dual-masked field isolation  
A field isolation process utilizes two or more isolation formation steps to form active areas on a semiconductor substrate. Each field isolation step forms a portion of the field isolation in a...
6066570 Method and apparatus for preventing formation of black silicon on edges of wafers  
A method for increasing chip yield by reducing black silicon deposition in accordance with the present invention includes the steps of providing a silicon wafer suitable for fabricating...
6051478 Method of enhancing trench edge oxide quality  
A shallow trench isolation structure is formed with a nitridated oxide liner on the sides and edges of the trench, thereby reducing interfacial strain. Embodiments include forming a trench opening...
6045625 Buried oxide with a thermal expansion matching layer for SOI  
A silicon-on-insulator structure (10) having a thick buried multi-layer (14) is disclosed herein. The thick buried multi-layer (14) comprises a thermal expansion coefficient matching layer (14b)...
6004406 Silicon on insulating substrate  
A first silicon single crystal substrate and a second silicon single crystal substrate are bonded together and the first silicon single crystal substrate is formed thin as an SOI layer. An...
5948162 Method for forming SOI structure  
An epitaxially grown layer having a large area and an uniform thickness is formed on an insulating layer. The surface of a silicon substrate (2) is oxidized to form a silicon dioxide layer (4)...
5909626 SOI substrate and fabrication process therefor  
After partially burying an insulation layer in a first single-crystalline silicon substrate, and flattening, the first single-crystalline silicon substrate and a second single-crystalline substrate...
5900072 Insulating layer structure for semiconductor device  
A structure of an insulating layer in a semiconductor device includes a substrate, at least one inorganic insulating layer pattern formed on the substrate, and an organic insulating layer formed on...
5894037 Silicon semiconductor substrate and method of fabricating the same  
A silicon semiconductor substrate including a silicon semiconductor layer at one of upper and lower surfaces thereof, the silicon semiconductor layer being composed of polysilicon or noncrystal...
5891265 SOI substrate having monocrystal silicon layer on insulating film  
Oxygen ion is implanted into a silicon substrate to remain a silicon layer on a surface of the silicon substrate. In this state, a silicon oxide layer is formed under the silicon layer. Silicon...
5868870 Isolation structure of a shallow semiconductor device trench  
A trench for isolating active devices on a semiconductor substrate, formed by creating a trench which has a peripheral edge, and disposing an isolating material in the trench. The isolating...
5782997 Aluminum metallization for SiGe devices  
Single crystal aluminum is deposited on SiGe structures to form metal interconnects. Generally, a method of forming single crystal aluminum on Si (1-X) Ge X is presented, including the steps of...
5782996 Graded compositions of II-VI semiconductors and devices utilizing same  
A graded layer composition of Zn(Se,Te) in which the Te fraction varies across the layer in a super-parabolic grading profile. Such a graded layer has lower contact resistance than graded layers in...
5780346 N.sub.2 O nitrided-oxide trench sidewalls and method of making isolation structure  
A method of forming an isolation structure in a semiconductor substrate is described. A trench is first etched into a semiconductor substrate. A first oxide layer is then formed with the trench....
5733383 Spacers used to form isolation trenches with improved corners  
A trench for isolating active devices on a semiconductor substrate, formed by creating a trench which has a peripheral edge, and disposing an isolating material in the trench. The isolating...
5728231 Precursor for semiconductor thin films and method for producing semiconductor thin films  
A precursor for manufacturing a semiconductor thin film in which an oxide thin film comprising at least one element as a dopant, selected from a group which consists of Groups IA, IIA, IIB, VA, and...
5721145 Method of making a semiconductor substrate having gettering effect  
The present invention is mainly characterized in that a semiconductor substrate improved so as to maintain a gettering effect for a long time can be obtained. A polycrystalline silicon film is...
5698063 Intermediate workpiece employing a mask for etching an aperture aligned with the crystal planes in the workpiece substrate  
A method for differentially etching an N-sided polygon aperture through a first major surface of a <100> silicon wafer along the <111> planes begins with depositing a mask and defining...
5658834 Forming B.sub.1-x C.sub.x semiconductor layers by chemical vapor deposition  
Active semiconductor devices including heterojunction diodes and thin film transistors are formed by PECVD deposition of a boron carbide thin film on an N-type substrate. The boron to carbon ratio...
5610104 Method of providing a mark for identification on a silicon surface  
The present invention concerns a method for making an identification mark on a silicon surface. In a preferred embodiment, the identification mark formed on the silicon surface does not...
5509974 Etch control seal for dissolved wafer process  
A dissolved wafer process is modified by providing an etch control seal around the perimeter of an etch resistant microstructure, such as a micromechanical or microelectromechanical device, formed...
5478408 SOI substrate and manufacturing method therefor  
There is provided an SOI (Silicon On Insulator) substrate having a thick SOI layer, where crystallographic defects mainly consisting of OSFs (Oxidation Induced Stacking Fault) are practically...
5470398 Dielectric thin film and method of manufacturing same  
A dielectric film is provided which may be used as an insulating layer of a capacitor of a semiconductor DRAM. The dielectric film is comprised of three elements, namely, titanium, silicon and...
5443661 SOI (silicon on insulator) substrate with enhanced gettering effects  
A silicon-on-insulator (SOI) substrate is arranged such that a polycrystalline silicon film which functions as a gettering site for heavy metals is provided on a first single crystal silicon...
5368880 Eutectic bond and method of gold/titanium eutectic bonding of cadmium telluride to sapphire  
A method of forming a eutectic bond, of Cadmium Telluride to Sapphire utilizing the Gold/Silicon eutectic bonding of the Cadmium Telluride to the Sapphire. A multi-layer structure of: Chromium...
5354387 Boron phosphorus silicate glass composite layer on semiconductor wafer  
A composite BPSG insulating and planarizing layer is formed over stepped surfaces of a semiconductor wafer by a novel two step process. The composite BPSG layer is characterized by the absence of...
5354386 Method for plasma etching tapered and stepped vias  
A multi-step plasma etch method for etching a tapered via having uniform bottom diameter ("CD") and extending through the resist and into the oxide layer of a coated semiconductor substrate, and a...
5352530 Transparent films and laminates having the same  
A highly transparent film having high strength, suitable extensibility, high weather resistance, low moisture absorption and so on is disclosed, which consists mainly of EVAT. And also various...
5332451 Epitaxially grown compound-semiconductor crystal  
An epitaxially grown compound-semiconductor crystal comprising a substrate, a buffer layer formed directly or indirectly on the substrate, and an active layer formed on the buffer layer. The buffer...
5282903 High quality oxide films on substrates  
A method for providing an oxide film of a material on the surface of a substrate using a reactive deposition of the material onto the substrate surface in the presence of a solid or liquid layer of...
5281283 Group III-V compound crystal article using selective epitaxial growth  
A III-V group compound crystal article comprises a substrate having a non-nucleation surface with smaller nucleation density (S NDS ) and a nucleation surface (S NDL ) which is arranged adjacent to...
5248350 Structure for improving gate oxide integrity for a semiconductor formed by a recessed sealed sidewall field oxidation process  
A process for forming field oxide regions between active regions in a semiconductor substrate. Pad oxide, polysilicon and first silicon nitride layers are successively formed over substrate active...
Matches 1 - 50 out of 243 1 2 3 4 5 >