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RE39484 Process for the production of thin semiconductor material films  
Process for the preparation of thin monocrystalline or polycrystalline semiconductor material films, characterized in that it comprises subjecting a semiconductor material wafer having a planar fac...
7030451 Method and apparatus for performing nickel salicidation  
A method and apparatus for performing nickel salicidation is disclosed. The nickel salicide process typically includes: forming a processed substrate including partially fabricated integrated circu...
7018920 Composite sacrificial material  
A composite sacrificial material is deposited in a void or opening in a dielectric layer on a semiconductor substrate. The composite sacrificial material includes a polymeric or oligomeric matrix w...
7018484 Semiconductor-on-insulator silicon wafer and method of formation  
A method of fabricating a semiconductor-on-insulator semiconductor wafer is described that includes providing first and second silicon substrates. A first thin layer of silicon dioxide is formed on...
6905557 Three dimensional integrated device  
A device integration method and integrated device. The method includes the steps of polishing surfaces of first and second workpieces each to a surface roughness of about 5-10 Å. The polished sur...
6864579 Carrier with a metal area and at least one chip configured on the metal area  
A carrier has a metal area that is essentially composed of copper. A chip has a rear side metallization layer. A buffer layer, essentially composed of nickel and having a thickness of between 5 μm...
6833570 Structure comprising an insulated part in a solid substrate and method for producing same  
A structure having a first part and at least one second part. The second part is electrically insulated from the first part and the parts are formed in the same wafer of a material. The first and s...
6812529 Suppression of cross diffusion and gate depletion  
According to the present invention, an ultrathin buried diffusion barrier layer (UBDBL) is formed over all or part of the doped polysilicon layer of a polysilicide structure composed of the polycry...
6786978 Mass production of cross-section TEM samples by focused ion beam deposition and anisotropic etching  
A method of preparing a TEM sample. A focused ion beam is used to deposit a mask on the material to be sampled. Reactive ion etching removes material not protected by the mask, leaving a wall thin ...
6565649 Epitaxial wafer substantially free of grown-in defects  
The present invention is directed to an epitaxial wafer comprising a single crystal silicon substrate having an axially symmetric region in which silicon self-interstitials are the predominant intr...
6552395 Higher thermal conductivity glass for SOI heat removal  
In one embodiment, the present invention relates to a method of forming a silicon-on-insulator substrate, involving the steps of providing a first silicon substrate; forming a beryllium oxide layer...
6551944 Process for manufacturing a semiconductor material wafer comprising single-Crystal regions separated by insulating material regions  
A process including the steps of: carrying out a directional etching in a semiconductor material body to form trenches having a first width; carrying out an isotropic etching of the semiconductor m...
6340642 Process for manufacturing a silicon semiconductor device having a reduced surface recombination velocity  
A process for manufacturing a silicon semiconductor device having a reduced surface recombination velocity of charge carriers within a silicon wafer includes forming a plurality of semiconductor zo...
6340535 Method for the heat treatment of a ZnSe crystal substrate, heat treated substrate and light emission device  
This invention relates to a method for the heat treatment of a ZnSe crystal substrate to dope it with Al as a donor impurity, a ZnSe crystal substrate prepared by this heat treatment and a light-em...
6322634 Shallow trench isolation structure without corner exposure  
A shallow isolation trench structure and methods of forming the same wherein the method of formation comprises a layered structure of a buffer film layer over a dielectric layer which is atop a sem...
6307225 Insulating material, substrate covered with an insulating film, method of producing the same, and thin-film device  
A bismuth silicate film (insulating film) 3 of Bi 2 SiO 5 oriented predominantly in the direction of (100) is formed on a Si substrate 2 and a ferroelectric thin film 4 is formed on the bismuth s...
6294478 Fabrication process for a semiconductor substrate  
SOI substrates are fabricated with sufficient quality and with good reproducibility. At the same time, conservation of resources and reduction of cost are realized by reuse of the wafer and the lik...
6238482 Method of producing a wafer with an epitaxial quality layer and device with epitaxial quality layer  
A method of making a wafer is provided. A first semiconductor film is formed onto a semiconductor substrate. An epitaxial film is formed onto an epitaxial wafer. The epitaxial wafer is placed with ...
6193813 Utilization of SiH4 soak and purge in deposition processes  
A method of processing a substrate, such as a semiconductor wafer, in a vacuum processing chamber includes the steps of depositing a material on a surface of the substrate using a gas mixture, and ...
6139647 Selective removal of vertical portions of a film  
A post-etch structure resulting in the inverse of a sidewall spacer etch, i.e. removal of the spacer. A vertical portion of a film is removed while leaving horizontal portions substantially intact....
6114052 Ingot plate made of thermoelectric material, rectangular bar cut from the ingot plate, and process of fabricating the ingot plate  
6107167 Simplified method of patterning polysilicon gate in a semiconductor device  
Polysilicon gates are formed with greater accuracy and consistency by depositing an antireflective layer, e.g., amorphous silicon, on the polysilicon layer before patterning. Embodiments also inclu...
6103020 Dual-masked field isolation  
A field isolation process utilizes two or more isolation formation steps to form active areas on a semiconductor substrate. Each field isolation step forms a portion of the field isolation in a man...
6066570 Method and apparatus for preventing formation of black silicon on edges of wafers  
A method for increasing chip yield by reducing black silicon deposition in accordance with the present invention includes the steps of providing a silicon wafer suitable for fabricating semiconduct...
6051478 Method of enhancing trench edge oxide quality  
A shallow trench isolation structure is formed with a nitridated oxide liner on the sides and edges of the trench, thereby reducing interfacial strain. Embodiments include forming a trench opening ...
6045625 Buried oxide with a thermal expansion matching layer for SOI  
A silicon-on-insulator structure (10) having a thick buried multi-layer (14) is disclosed herein. The thick buried multi-layer (14) comprises a thermal expansion coefficient matching layer (14b) be...
6004406 Silicon on insulating substrate  
A first silicon single crystal substrate and a second silicon single crystal substrate are bonded together and the first silicon single crystal substrate is formed thin as an SOI layer. An insulati...
5948162 Method for forming SOI structure  
An epitaxially grown layer having a large area and an uniform thickness is formed on an insulating layer. The surface of a silicon substrate (2) is oxidized to form a silicon dioxide layer (4) acti...
5909626 SOI substrate and fabrication process therefor  
After partially burying an insulation layer in a first single-crystalline silicon substrate, and flattening, the first single-crystalline silicon substrate and a second single-crystalline substrate...
5900072 Insulating layer structure for semiconductor device  
A structure of an insulating layer in a semiconductor device includes a substrate, at least one inorganic insulating layer pattern formed on the substrate, and an organic insulating layer formed on...
5894037 Silicon semiconductor substrate and method of fabricating the same  
A silicon semiconductor substrate including a silicon semiconductor layer at one of upper and lower surfaces thereof, the silicon semiconductor layer being composed of polysilicon or noncrystal sil...
5891265 SOI substrate having monocrystal silicon layer on insulating film  
Oxygen ion is implanted into a silicon substrate to remain a silicon layer on a surface of the silicon substrate. In this state, a silicon oxide layer is formed under the silicon layer. Silicon oxi...
5868870 Isolation structure of a shallow semiconductor device trench  
A trench for isolating active devices on a semiconductor substrate, formed by creating a trench which has a peripheral edge, and disposing an isolating material in the trench. The isolating materia...
5855693 Wafer of semiconductor material for fabricating integrated devices, and process for its fabrication  
A wafer of semiconductor material for fabricating integrated devices, including a stack of superimposed layers including first and second monocrystalline silicon layers separated by an intermediate...
5782997 Aluminum metallization for SiGe devices  
Single crystal aluminum is deposited on SiGe structures to form metal interconnects. Generally, a method of forming single crystal aluminum on Si (1-X) Ge X is presented, including the steps of ma...
5782996 Graded compositions of II-VI semiconductors and devices utilizing same  
A graded layer composition of Zn(Se,Te) in which the Te fraction varies across the layer in a super-parabolic grading profile. Such a graded layer has lower contact resistance than graded layers in...
5780346 N.sub.2 O nitrided-oxide trench sidewalls and method of making isolation structure  
A method of forming an isolation structure in a semiconductor substrate is described. A trench is first etched into a semiconductor substrate. A first oxide layer is then formed with the trench. Th...
5733383 Spacers used to form isolation trenches with improved corners  
A trench for isolating active devices on a semiconductor substrate, formed by creating a trench which has a peripheral edge, and disposing an isolating material in the trench. The isolating materia...
5728231 Precursor for semiconductor thin films and method for producing semiconductor thin films  
A precursor for manufacturing a semiconductor thin film in which an oxide thin film comprising at least one element as a dopant, selected from a group which consists of Groups IA, IIA, IIB, VA, and...
5721145 Method of making a semiconductor substrate having gettering effect  
The present invention is mainly characterized in that a semiconductor substrate improved so as to maintain a gettering effect for a long time can be obtained. A polycrystalline silicon film is form...
5698063 Intermediate workpiece employing a mask for etching an aperture aligned with the crystal planes in the workpiece substrate  
A method for differentially etching an N-sided polygon aperture through a first major surface of a <100> silicon wafer along the <111> planes begins with depositing a mask and defining ...
5658834 Forming B.sub.1-x C.sub.x semiconductor layers by chemical vapor deposition  
Active semiconductor devices including heterojunction diodes and thin film transistors are formed by PECVD deposition of a boron carbide thin film on an N-type substrate. The boron to carbon ratio ...
5610104 Method of providing a mark for identification on a silicon surface  
The present invention concerns a method for making an identification mark on a silicon surface. In a preferred embodiment, the identification mark formed on the silicon surface does not substantial...
5595600 Low temperature selective growth of silicon or silicon alloys  
Epitaxial and polycrystalline layers of silicon and silicon-germanium alloys are selectively grown on a semiconductor substrate or wafer by forming over the wafer a thin film masking layer of an ox...
5509974 Etch control seal for dissolved wafer process  
A dissolved wafer process is modified by providing an etch control seal around the perimeter of an etch resistant microstructure, such as a micromechanical or microelectromechanical device, formed ...
5478408 SOI substrate and manufacturing method therefor  
There is provided an SOI (Silicon On Insulator) substrate having a thick SOI layer, where crystallographic defects mainly consisting of OSFs (Oxidation Induced Stacking Fault) are practically preve...
5470398 Dielectric thin film and method of manufacturing same  
A dielectric film is provided which may be used as an insulating layer of a capacitor of a semiconductor DRAM. The dielectric film is comprised of three elements, namely, titanium, silicon and oxyg...
5443661 SOI (silicon on insulator) substrate with enhanced gettering effects  
A silicon-on-insulator (SOI) substrate is arranged such that a polycrystalline silicon film which functions as a gettering site for heavy metals is provided on a first single crystal silicon substr...
5437739 Etch control seal for dissolved wafer micromachining process  
A dissolved wafer micromachining process is modified by providing an etch control seal around the perimeter of a heavily doped micromechanical structure formed on a substrate. The micromechanical s...
5433794 Spacers used to form isolation trenches with improved corners  
A trench for isolating active devices on a semiconductor substrate, formed by creating a trench which has a peripheral edge, and disposing an isolating material in the trench. The isolating materia...

Matches 1 - 50 out of 267 1 2 3 4 5 6 >