Matches 101 - 150 out of 267 < 1 2 3 4 5 6 >
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4717631 Silicon oxynitride passivated semiconductor body and method of making same  
A semiconductor body with an improved passivating layer is disclosed. In one embodiment, the body is a device comprising a semiconductor material having regions of opposite conductivity types which...
4676845 Passivated deep p/n junction  
A passivated deep p/n junction obtained by ion implantation is disclosed. The passivated deep p/n junction is formed in a wafer, preferably a silicon wafer, thus providing an emitter region that is...
4657602 Integrated complementary transistor circuit at an intermediate stage of manufacturing  
An integrated complementary transistor circuit at an intermediate stage of manufacturing comprises a semiconductor substrate having dopant atoms of a first conductivity type and having a...
4645546 Semiconductor substrate  
Disclosed is a silicon semiconductor substrate for a semiconductor integrated circuit such as LSI or VLSI. The silicon semiconductor substrate has an oxygen concentration ranging from 3×10 17 cm...
4639277 Semiconductor material on a substrate, said substrate comprising, in order, a layer of organic polymer, a layer of metal or metal alloy and a layer of dielectric material  
There is disclosed a substrate having thereon a layer of a semiconductor material, and a method for depositing and heating the semiconductor material on the substrate, wherein the substrate...
4623403 Indexing of laser beam for programming VLSI devices  
A target for a laser beam consists of a plurality of closely spaced lines that causes the generation of an readily-identifiable read-out so that the laser beam can be indexed when performing laser...
4608097 Method for producing an electronically passivated surface on crystalline silicon using a fluorination treatment and an organic overlayer  
A method is described for producing an electronically passivated stable surface on silicon wafers. The passivation technique consists of first fluorinating the surface of a crystalline silicon...
4608096 Gettering  
Semiconductor substrate materials, such as silicon, useful in the manufacture of electronic devices, such as integrated circuits, employing low temperature, i.e., below 1025° C. processing cycles...
4608095 Gettering  
Semiconductor substrate materials, such as silicon, useful in the manufacture of electronic devices, such as integrated circuits, employing low temperature, i.e., below 1025° C. processing cycles...
4560422 Method for forming integrated circuits bearing polysilicon of reduced resistance  
A method for fabricating polysilicon of reduced resistance that may be incorporated in silicon integrated chip manufacturing processes which comprises coating a wafer bearing dielectrically...
4549912 Anode and cathode connections for the practice of electromigration  
In the electromigration process, liquid metal inclusions are migrated into or through bodies of semiconductor material by an electrical potential gradient driving force. The method of this...
4523964 High temperature layered silicon structures  
The invention relates to a process for producing silicon diaphragm pressure transducers, and to pressure transducers so produced, which will operate in high temperature applications above 150° C....
4522886 Method of ion beam synthesis of thin silicon nitride films and resulting articles  
A method is disclosed for the synthesis of ultra-thin silicon nitride (Si x N y ) films by the direct interaction of a low energy noble ion beam (e.g. Ar + or He + ), with NH 3 physically...
4462846 Semiconductor structure for recessed isolation oxide  
A method of providing recessed oxide isolation layers employs prior art techniques to the point at which a photoetched recess has exposed the semiconductor surface in which the recessed oxide...
4416952 Oxynitride film and its manufacturing method  
The oxynitride film according to the present invention contains Ga and/or Al and has O/N ratio of at least 0.15. This film is obtained by relying on, for example, chemical vapor deposition...
4388383 Devices having chemically modified p-type InP surfaces  
Semiconductor devices comprising p-type phosphorus containing semiconductor materials chosen from InP, GaP and InGaAsP have chemically treated surfaces comprising a monolayer or less of a metal...
4368085 SOS island edge passivation structure  
A silicon-on-sapphire semiconductor structure, and method of fabricating such structure, in which a silicone nitride layer is provided over the oxide layer. The silicon nitride layer is disposed...
4344803 Photo cathode made from composite semiconductor/glass material  
A composite semiconductor/glass material comprising at least one semiconductor layer permanently connected to a plate shaped glass substrate, the doping of the semiconductor layer rising from a...
4343963 Substrate for silicon solar cells  
A substrate is made for silicon solar cells by heating a sheet of large-grained silicon steel at a temperature of at least about 1300° C. in an atmosphere of hydrogen and tungsten hexafluoride (or...
4331970 Use of dispersed solids as fillers in polymeric materials to provide material for semiconductor junction passivation  
Rutile, lead zirconate and barium titanate are employed as a filler material in a polymeric material to improve the electrical characteristics thereof for use as a surface coating on semiconductor...
4331737 Oxynitride film and its manufacturing method  
The oxynitride film according to the present invention contains Ga and/or Al and has O/N ratio of at least 0.15. This film is obtained by relying on, for example, chemical vapor deposition...
4282045 Pb.sub.1-W Cd.sub.W S Epitaxial thin film  
A variable temperature method for the preparation of single and multiple epitaxial layers of single-phase (e.g., face-centered cubic), ternary lead chalcogenide alloys (e.g., lead cadmium sulfide,...
4273594 Gallium arsenide devices having reduced surface recombination velocity  
Semiconductor devices using chemically treated n-type GaAs have greatly reduced surface recombination velocities. A preferred embodiment uses fractional monolayers of ruthenium on the GaAs surface.
4251285 Diffusion of dopant from optical coating and single step formation of PN junction in silicon solar cell and coating thereon  
The PN juncture in a silicon chip and an oxide coating on its surface are simultaneously formed from clear solution derived from titanium alkoxides, water, alcohol, a suitable acid, and a P or N...
4241167 Electrolytic blocking contact to InP  
A liquid barrier contact to InP made of 40% tartatic acid and 30% hydrogen peroxide in a 3:1 ratio by volume is used for capacitance-voltage carrier profiling to large voltages (>10 V) on...
4213801 Ohmic contact of N-GaAs to electrical conductive substrates by controlled growth of N-GaAs polycrystalline layers  
Thin layers of polycrystalline n-type GaAs have been deposited on a conducting substrate such as graphite. These contacted GaAs layers exhibit desirable properties for device applications, i.e.,...
4210470 Epitaxial tunnels from intersecting growth planes  
Epitaxial tunnels may be formed in crystalline bodies of crystalline materials by growth of the material on a substrate having two intersecting crystallographic planes that exhibit rapid epitaxial...
4199649 Amorphous monomolecular surface coatings  
The self-aligning characteristics of surface-active molecules are used to provide a multiply-coupled thin film surface coating on a substrate, comprising an outermost layer of normally fluid,...
4135027 Semiconductor element embodying an optical coating to enhance thermal gradient zone melting processing thereof  
An optical coating is disposed on selected surface areas of a semiconductor element to enchance processing thereof by TGZM
4088799 Method of producing an electrical resistance device  
The process by which this device is made comprises the implantation of ions into an insulator. Surface charge on the insulator is discharged during implantation by an electron beam or by a thin...
4079506 Method of preparing a dielectric-isolated substrate for semiconductor integrated circuitries  
In the preparation of a dielectric-isolated substrate for semiconductor integrated circuits which comprises a plurality of silicon single crystalline islands in which circuit elements are formed, a...
4040874 Semiconductor element having a polymeric protective coating and glass coating overlay  
A multilayer passivation-encapsulation for a semiconductor element is provided by a suitable polymer layer disposed on the device and overcoated with a glass layer for hermeticity.
4030948 Polyimide containing silicones as protective coating on semiconductor device  
A copolymer which is the reaction product of a tetracarboxylic acid dianhydride, and organic diamine and a di(aminoalkyl) poly siloxane where the di(aminoalkyl) poly siloxane constitutes 18 - 45...
4017340 Semiconductor element having a polymeric protective coating and glass coating overlay  
A multilayer passivation-encapsulation for a semiconductor element is provided by a suitable polymer layer disposed on the device and overcoated with a glass layer for hermeticity.
4002511 Method for forming masks comprising silicon nitride and novel mask structures produced thereby  
In the fabrication of integrated circuits, a method is provided for forming masking structures comprising silicon nitride which avoids the stresses and dislocations associated with direct silicon...
3983284 Flat connection for a semiconductor multilayer structure  
Upon a substrate containing different zones which are to be connected with one another, there are successively deposited a layer of thickness e 1 , of a first metal (tantalum) oxidizable by heat...
3917495 Method of making improved planar devices including oxide-nitride composite layer  
Improved method for fabricating semiconductor devices including insulating layer over semiconductor body and metallic member over insulating layer prevents degradation of insulator by impurity ion,...
3913126 Silicon dioxide etch rate control by controlled additions of p2 O 2 O3  
A method of making an integrated circuit in which controlled chemical etching of silicon dioxide layers is achieved by the controlled addition of both phosphorus pentoxide and boron trioxide to the...
3913121 Semiconductor structure  
Semiconductor structure formed of a semiconductor body formed of semiconductor material with a first layer of insulating material on a surface of the semiconductor body. A first support structure...
3882000 Formation of composite oxides on III-V semiconductors  
A method of forming a composite oxide on III-V compound semiconductors is disclosed. An oxidizable metal such as Al, Ni, Ta, Ti, Zn or alloys including said metals is deposited on the surface of...
3853633 METHOD OF MAKING A SEMI PLANAR INSULATED GATE FIELD-EFFECT TRANSISTOR DEVICE WITH IMPLANTED FIELD  
A semi-planar insulated gate field effect transistor integrated circuit device having an ion implanted field region to achieve high field inversion voltage. The field effect transistor is...
3793090 METHOD FOR STABILIZING FET DEVICES HAVING SILICON GATES AND COMPOSITE NITRIDE-OXIDE GATE DIELECTRICS  
Large threshold voltage shifts of silicon gate FET devices having a composite nitride-oxide gate dielectric are greatly reduced by subjecting the nitride to a dry oxygen annealing at temperatures...
3767487 METHOD OF PRODUCING IGFET DEVICES HAVING OUTDIFFUSED REGIONS AND THE PRODUCT THEREOF  
A method of manufacturing a semiconductor device having an insulated gate field effect transistor in which a second region of the second conductivity type is indiffused in a first region of the...
3751306 SEMICONDUCTOR ELEMENT  
A semiconductor element with a semiconductor body with pn-junction at the surface. At least the pn-junction is provided with an insulating layer. The insulating coating contains bivalent lead ions,...
3643137 SEMICONDUCTOR DEVICES  
A semiconductor device which has a semiconductive single crystalline substrate having a plane surface, and an insulating film such as silicon oxide covering said plane surface, in which said plane...
3627589 METHOD OF STABILIZING SEMICONDUCTOR DEVICES  
This invention relates to a method of minimizing the effects of mobile impurity ions in an insulating layer formed on a semiconductor body of silicon material. Initially the semiconductor body is...
3620850 OXYGEN ANNEALING  
A method for varying the surface charge density of a semiconductor device including the steps of heating the device prior to metallization at a temperature between 500° C. and 1,250° C. in dry...
3617398 A PROCESS FOR FABRICATING SEMICONDUCTOR DEVICES HAVING COMPENSATED BARRIER ZONES BETWEEN NP-JUNCTIONS  
A process for forming semiconductor devices by forming in a semiconductor substrate of one conductivity type a diffused region of a second conductivity type circumscribed by an adjacent gold...
3615913 POLYIMIDE AND POLYAMIDE-POLYIMIDE AS A SEMICONDUCTOR SURFACE PASSIVATOR AND PROTECTANT COATING  
Exposed portions of PN junctions and exposed surfaces of bodies of semiconductor material are passivated and protected by a coating of a cured, material selected from the group consisting of...
3607468 METHOD OF FORMING SHALLOW JUNCTION SEMICONDUCTOR DEVICES  
A method for making a high-performance NPN silicon semiconductor device which has an arsenic emitter which gives a substantial improvement in transistor speed and current gain over similar...
Matches 101 - 150 out of 267 < 1 2 3 4 5 6 >