Matches 51 - 100 out of 267 < 1 2 3 4 5 6 >
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5401715 Semiconductor substrate having a superconducting thin film  
A semiconductor substrate having a silicon substrate and a superconducting thin film layer composed of compound oxide such as Ln 1 Ba 2 Cu 3 O 7 -δ (Ln is lanthanide) and stratified on the...
5368880 Eutectic bond and method of gold/titanium eutectic bonding of cadmium telluride to sapphire  
A method of forming a eutectic bond, of Cadmium Telluride to Sapphire utilizing the Gold/Silicon eutectic bonding of the Cadmium Telluride to the Sapphire. A multi-layer structure of: Chromium...
5364468 Method for the growth of epitaxial metal-insulator-metal-semiconductor structures  
In one form of the invention, a method for the growth of an epitaxial insulator-metal structure on a semiconductor surface comprising the steps of maintaining the semiconductor surface at a...
5354387 Boron phosphorus silicate glass composite layer on semiconductor wafer  
A composite BPSG insulating and planarizing layer is formed over stepped surfaces of a semiconductor wafer by a novel two step process. The composite BPSG layer is characterized by the absence of...
5354386 Method for plasma etching tapered and stepped vias  
A multi-step plasma etch method for etching a tapered via having uniform bottom diameter ("CD") and extending through the resist and into the oxide layer of a coated semiconductor substrate, and a...
5352530 Transparent films and laminates having the same  
A highly transparent film having high strength, suitable extensibility, high weather resistance, low moisture absorption and so on is disclosed, which consists mainly of EVAT. And also various...
5332451 Epitaxially grown compound-semiconductor crystal  
An epitaxially grown compound-semiconductor crystal comprising a substrate, a buffer layer formed directly or indirectly on the substrate, and an active layer formed on the buffer layer. The buffer...
5282903 High quality oxide films on substrates  
A method for providing an oxide film of a material on the surface of a substrate using a reactive deposition of the material onto the substrate surface in the presence of a solid or liquid layer of...
5281283 Group III-V compound crystal article using selective epitaxial growth  
A III-V group compound crystal article comprises a substrate having a non-nucleation surface with smaller nucleation density (S NDS ) and a nucleation surface (S NDL ) which is arranged adjacent to...
5248350 Structure for improving gate oxide integrity for a semiconductor formed by a recessed sealed sidewall field oxidation process  
A process for forming field oxide regions between active regions in a semiconductor substrate. Pad oxide, polysilicon and first silicon nitride layers are successively formed over substrate active...
5240512 Method and structure for forming a trench within a semiconductor layer of material  
A method and structure for forming a trench within a semiconductor layer (12) of material is provided. A first mask structure comprising a third insulating layer (20) and a fourth insulating layer...
5225235 Semiconductor wafer and manufacturing method therefor  
A semiconductor wafer on which silicon or the like is epitaxially grown and p-type or n-type impurities are doped and which has at the rear surface except for the peripheral edge portion thereof a...
5219797 Method of treating a gallium arsenide surface and gallium arsenide surface so treated  
A gallium arsenide surface is treated and made ready for passivation by esing the gallium arsenide surface to silicon monoxide (SiO) vapor under a vacuum at about 450° C. for a short time.
5213906 Composite material comprising a layer of a III-V compound and a layer of rare earth pnictide, production process and application  
The present invention relates to a composite material. This material comprises at least one layer A of III-V compound and one epitaxial layer B on said layer of III-V compounds, the epitaxial layer...
5205871 Monocrystalline germanium film on sapphire  
A monocrystalline germanium film is grown on a sapphire substrate with a (1102) orientation. The substrate is first pretreated to restructure the (1102) surface plane. Typically, restructuring is...
5194928 Passivation of metal in metal/polyimide structure  
Disclosed is a process for passivating a metal surface in a metal/polyimide structure, such as a polyimide layer on a semiconductor substrate containing a pattern of metallization. The process...
5141569 Growth of P type Group III-V compound semiconductor on Group IV semiconductor substrate  
`Unintentionally` doped P type GaAs is grown on silicon by a metal organic chemical vapor deposition process in which the molecular ratio of arsenic to gallium in the growth ambient is reduced to a...
5131963 Silicon on insulator semiconductor composition containing thin synthetic diamone films  
A process is provided for making a semiconductor element comprising a single-crystal layer of silicon on a diamond insulator.
5123975 Single crystal silicon substrate  
A single crystal silicon substrate which comprises an electric insulation member and a single crystal silicon film formed on the insulation member. The silicon film has first regions and second...
H001041 Method of reducing the surface leakage on a III-V semiconductor  
The surface leakage on a III-V semiconductor is reduced by selectively grng a mixed oxide on the surface of the semiconductor to passivate the semiconductor and reduce the surface leakage.
5100839 Method of manufacturing wafers used for electronic device  
A rod base material for forming wafers for electronic devices is formed from a plurality of rod members made of selected materials. The rods are assembled in parallel and are bonded with each other...
5098861 Method of processing a semiconductor substrate including silicide bonding  
A method for processing at least two semiconductor wafers for producing a partially processed semiconductor substrate which can be subsequently further processed utilizing conventional planar...
5043789 Planarizing silsesquioxane copolymer coating  
An improved insulating layer is formed by applying to a suitable substrate an organic solution, prepared by reacting an aminoalkoxysilane monomer, an arylalkoxysilane or arylsilazane monomer and...
5039358 Amorphous, hydrogenated carbon electroactive passivation layer  
The invention provides electroactive passivation layers for semiconductor components comprising a thin layer of amorphous, hydrogenated carbon.
5026437 Cantilevered microtip manufacturing by ion implantation and etching  
A method for fabricating a microtip, cantilevered from a base and having a controllably high aspect ratio, for use in microprobe microscopy to probe variations in materials at the atomic level. A...
4987095 Method of making unpinned oxide-compound semiconductor structures  
Unpinned epitaxial metal-oxide-compound semiconductor structures are disclosed and a method of fabricating such structures is described. Epitaxial layers of compound semiconductor are grown by MBE...
4981530 Planarizing ladder-type silsesquioxane polymer insulation layer  
An improved insulation layer is formed by first preparing a solution by reacting water with an aminoalkoxysilane monomer in a solvent, using a critical mole ratio of water/monomer. After a...
4962051 Method of forming a defect-free semiconductor layer on insulator  
An improved method of fabricating a defect-free semiconductor layer and a semiconductor on insulator structure is provided by forming an isoelectronically doped semiconductor layer between a...
4954189 Silicon wafers for producing oxide layers of high breakdown strength and process for the production thereof  
Silicon wafers and a process for the production thereof which produces was having intrinsic gettering action and on which thin oxide layers with high breakdown strength can be produced. During the...
4925809 Semiconductor wafer and epitaxial growth on the semiconductor wafer with autodoping control and manufacturing method therefor  
A semiconductor wafer on which silicon or the like is epitaxially grown and p-type or n-type impurities are doped and which has at the rear surface except for the peripheral edge portion thereof a...
4891330 Method of fabricating n-type and p-type microcrystalline semiconductor alloy material including band gap widening elements  
A method of fabricating doped microcrystalline semiconductor alloy material which includes a band gap widening element through a glow discharge deposition process by subjecting a precursor mixture...
4891329 Method of forming a nonsilicon semiconductor on insulator structure  
A method of forming a nonsilicon semiconductor layer on an insulating layer by forming a thin heteroepitaxial layer of nonsilicon semiconductor on a first substrate having a lattice structure which...
4878957 Dielectrically isolated semiconductor substrate  
A dielectrically isolated semiconductor wafer substrate includes first and second semiconductive layers bonded to each other by a direct bonding technique in such a manner that an insulative layer...
4878956 Single crystal films of cubic group II fluorides on semiconductor compounds  
Certain semiconductor device structures are described in which single crystal layers of cubic Group II fluorides cover at least part of the surface of III-V semiconductor compound. The fluoride...
4876222 Semiconductor passivation  
A method of passivation of Hg 1 -x Cd x Te and similar semiconductors by chemical reaction to either sulfide or selenide or a combination of both with an oxidizer such as polysulfide or...
4876212 Process for fabricating complimentary semiconductor devices having pedestal structures  
A process for fabricating complimentary semiconductor devices having pedestal structures wherein both PNP and NPN transistors are formed simultaneously on the same substrate. After polysilicon...
4871692 Passivation of group III-V surfaces  
A method of passivating a Group III-V compound surface by exposing the surface to a compound A-B, wherein A is an element having a heat of oxide formation greater than the heats of oxide formation...
4870032 Method of fabricating single crystal films of cubic group II fluorides on semiconductor componds by molecular beam epitaxy  
Certain semiconductor device structures are described in which single crystal layers of cubic Group II fluorides cover at least part of the surface of III-V semiconductor compound. The Fluoride...
4865656 Process for surface passivation of an indium phosphide substrate and product obtained  
Surface passivation of indium phosphide substrate. The process consists in: subjecting the substrate to cleaning without application of ultrasounds, soaking, for a duration of between 30 seconds...
4863529 Thin film single crystal diamond substrate  
A thin film single crystal diamond substrate which comprises a base substrate selected from the group consisting of a single crystal silicon substrate and a single crystal GaAs substrate, an...
4859253 Method for passivating a compound semiconductor surface and device having improved semiconductor-insulator interface  
A method for passivating the surface of a compound semiconductor comprises annealing the substrate to form an anion rich surface layer containing cationic and anionic oxides and stripping the...
4834809 Three dimensional semiconductor on insulator substrate  
A semiconductor substrate includes: a first monocrystalline semiconductive layer formed on the surface of a crystalline silicon substrate with the intervension of a first insulation film; a second...
4830984 Method for heteroepitaxial growth using tensioning layer on rear substrate surface  
A method, and products formed by such method, of providing a substantially planar surface to a layer of semiconducting material (24) formed on a first surface of a substrate (20), the substrate...
4829020 Substrate solder barriers for semiconductor epilayer growth  
During the growth of compound semiconductors by epitaxial processes, substrates are typically mounted to a support. In modular beam epitaxy, mounting is done using indium as a solder. This method...
4828629 Process of fabricating silicon oxide and gettering films on polycrystalline silicon resistance element  
Multi-layer film including a silicon oxide film formed by the CVD method and a film having a gettering function is used as a layer insulation film in a semiconductor device having a resistance...
4811077 Compound semiconductor surface termination  
A surface termination of a compound semiconductor is provided wherein conditions are provided for a pristine surface to be retained in an unpinned condition and a surface layer of a non-metallic...
4804633 Silicon-on-insulator substrates annealed in polysilicon tube  
A silicon-on-insulator substrate having a very low threading dislocation density is made by implanting oxygen ions into a silicon substrate while heating the substrate to form a layer of silicon...
4757369 Group III-V semiconductor electrical contact  
A layer of an amphoteric dopant on the surface of a group III-V intermetallic semiconductor crystal will diffuse into the crystal surface in a heating cycle forming a stable contact. The contact...
4746377 Semiconductor device with thermally oxidized insulating and arsenic diffusion layers  
In a surface region of a silicon semiconductor substrate (10), an arsenic diffusion layer (20) having a surface arsenic concentration of 5×10 18 cm -3 to 5×10 19 cm -3 is formed and then, the...
4729816 Isolation formation process with active area protection  
An isolation formation process that minimizes bird's beak encroachment and preserves gate oxide integrity in the active region. Future active areas are protected by a structure having a central...
Matches 51 - 100 out of 267 < 1 2 3 4 5 6 >