Patents in Class 148/33.300

Matches 51 - 100 out of 245

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Match	Document	Document Title
51	5281283	Group III-V compound crystal article using selective epitaxial growth A III-V group compound crystal article comprises a substrate having a non-nucleation surface with smaller nucleation density (S NDS ) and a nucleation surface (S NDL ) which is arranged adjacent to...
52	5248350	Structure for improving gate oxide integrity for a semiconductor formed by a recessed sealed sidewall field oxidation process A process for forming field oxide regions between active regions in a semiconductor substrate. Pad oxide, polysilicon and first silicon nitride layers are successively formed over substrate active...
53	5240512	Method and structure for forming a trench within a semiconductor layer of material A method and structure for forming a trench within a semiconductor layer (12) of material is provided. A first mask structure comprising a third insulating layer (20) and a fourth insulating layer...
54	5225235	Semiconductor wafer and manufacturing method therefor A semiconductor wafer on which silicon or the like is epitaxially grown and p-type or n-type impurities are doped and which has at the rear surface except for the peripheral edge portion thereof a...
55	5219797	Method of treating a gallium arsenide surface and gallium arsenide surface so treated A gallium arsenide surface is treated and made ready for passivation by esing the gallium arsenide surface to silicon monoxide (SiO) vapor under a vacuum at about 450° C. for a short time.
56	5213906	Composite material comprising a layer of a III-V compound and a layer of rare earth pnictide, production process and application The present invention relates to a composite material. This material comprises at least one layer A of III-V compound and one epitaxial layer B on said layer of III-V compounds, the epitaxial layer...
57	5205871	Monocrystalline germanium film on sapphire A monocrystalline germanium film is grown on a sapphire substrate with a (1102) orientation. The substrate is first pretreated to restructure the (1102) surface plane. Typically, restructuring is...
58	5194928	Passivation of metal in metal/polyimide structure Disclosed is a process for passivating a metal surface in a metal/polyimide structure, such as a polyimide layer on a semiconductor substrate containing a pattern of metallization. The process...
59	5131963	Silicon on insulator semiconductor composition containing thin synthetic diamone films A process is provided for making a semiconductor element comprising a single-crystal layer of silicon on a diamond insulator.
60	5123975	Single crystal silicon substrate A single crystal silicon substrate which comprises an electric insulation member and a single crystal silicon film formed on the insulation member. The silicon film has first regions and second...
61	H001041	Method of reducing the surface leakage on a III-V semiconductor The surface leakage on a III-V semiconductor is reduced by selectively grng a mixed oxide on the surface of the semiconductor to passivate the semiconductor and reduce the surface leakage.
62	5100839	Method of manufacturing wafers used for electronic device A rod base material for forming wafers for electronic devices is formed from a plurality of rod members made of selected materials. The rods are assembled in parallel and are bonded with each other...
63	5098861	Method of processing a semiconductor substrate including silicide bonding A method for processing at least two semiconductor wafers for producing a partially processed semiconductor substrate which can be subsequently further processed utilizing conventional planar...
64	5043789	Planarizing silsesquioxane copolymer coating An improved insulating layer is formed by applying to a suitable substrate an organic solution, prepared by reacting an aminoalkoxysilane monomer, an arylalkoxysilane or arylsilazane monomer and...
65	5039358	Amorphous, hydrogenated carbon electroactive passivation layer The invention provides electroactive passivation layers for semiconductor components comprising a thin layer of amorphous, hydrogenated carbon.
66	5026437	Cantilevered microtip manufacturing by ion implantation and etching A method for fabricating a microtip, cantilevered from a base and having a controllably high aspect ratio, for use in microprobe microscopy to probe variations in materials at the atomic level. A...
67	4987095	Method of making unpinned oxide-compound semiconductor structures Unpinned epitaxial metal-oxide-compound semiconductor structures are disclosed and a method of fabricating such structures is described. Epitaxial layers of compound semiconductor are grown by MBE...
68	4981530	Planarizing ladder-type silsesquioxane polymer insulation layer An improved insulation layer is formed by first preparing a solution by reacting water with an aminoalkoxysilane monomer in a solvent, using a critical mole ratio of water/monomer. After a...
69	4962051	Method of forming a defect-free semiconductor layer on insulator An improved method of fabricating a defect-free semiconductor layer and a semiconductor on insulator structure is provided by forming an isoelectronically doped semiconductor layer between a...
70	4954189	Silicon wafers for producing oxide layers of high breakdown strength and process for the production thereof Silicon wafers and a process for the production thereof which produces was having intrinsic gettering action and on which thin oxide layers with high breakdown strength can be produced. During the...
71	4925809	Semiconductor wafer and epitaxial growth on the semiconductor wafer with autodoping control and manufacturing method therefor A semiconductor wafer on which silicon or the like is epitaxially grown and p-type or n-type impurities are doped and which has at the rear surface except for the peripheral edge portion thereof a...
72	4891330	Method of fabricating n-type and p-type microcrystalline semiconductor alloy material including band gap widening elements A method of fabricating doped microcrystalline semiconductor alloy material which includes a band gap widening element through a glow discharge deposition process by subjecting a precursor mixture...
73	4891329	Method of forming a nonsilicon semiconductor on insulator structure A method of forming a nonsilicon semiconductor layer on an insulating layer by forming a thin heteroepitaxial layer of nonsilicon semiconductor on a first substrate having a lattice structure which...
74	4878956	Single crystal films of cubic group II fluorides on semiconductor compounds Certain semiconductor device structures are described in which single crystal layers of cubic Group II fluorides cover at least part of the surface of III-V semiconductor compound. The fluoride...
75	4878957	Dielectrically isolated semiconductor substrate A dielectrically isolated semiconductor wafer substrate includes first and second semiconductive layers bonded to each other by a direct bonding technique in such a manner that an insulative layer...
76	4876222	Semiconductor passivation A method of passivation of Hg 1 -x Cd x Te and similar semiconductors by chemical reaction to either sulfide or selenide or a combination of both with an oxidizer such as polysulfide or...
77	4876212	Process for fabricating complimentary semiconductor devices having pedestal structures A process for fabricating complimentary semiconductor devices having pedestal structures wherein both PNP and NPN transistors are formed simultaneously on the same substrate. After polysilicon...
78	4871692	Passivation of group III-V surfaces A method of passivating a Group III-V compound surface by exposing the surface to a compound A-B, wherein A is an element having a heat of oxide formation greater than the heats of oxide formation...
79	4870032	Method of fabricating single crystal films of cubic group II fluorides on semiconductor componds by molecular beam epitaxy Certain semiconductor device structures are described in which single crystal layers of cubic Group II fluorides cover at least part of the surface of III-V semiconductor compound. The Fluoride...
80	4865656	Process for surface passivation of an indium phosphide substrate and product obtained Surface passivation of indium phosphide substrate. The process consists in: subjecting the substrate to cleaning without application of ultrasounds, soaking, for a duration of between 30 seconds...
81	4863529	Thin film single crystal diamond substrate A thin film single crystal diamond substrate which comprises a base substrate selected from the group consisting of a single crystal silicon substrate and a single crystal GaAs substrate, an...
82	4859253	Method for passivating a compound semiconductor surface and device having improved semiconductor-insulator interface A method for passivating the surface of a compound semiconductor comprises annealing the substrate to form an anion rich surface layer containing cationic and anionic oxides and stripping the...
83	4834809	Three dimensional semiconductor on insulator substrate A semiconductor substrate includes: a first monocrystalline semiconductive layer formed on the surface of a crystalline silicon substrate with the intervension of a first insulation film; a second...
84	4830984	Method for heteroepitaxial growth using tensioning layer on rear substrate surface A method, and products formed by such method, of providing a substantially planar surface to a layer of semiconducting material (24) formed on a first surface of a substrate (20), the substrate...
85	4828629	Process of fabricating silicon oxide and gettering films on polycrystalline silicon resistance element Multi-layer film including a silicon oxide film formed by the CVD method and a film having a gettering function is used as a layer insulation film in a semiconductor device having a resistance...
86	4829020	Substrate solder barriers for semiconductor epilayer growth During the growth of compound semiconductors by epitaxial processes, substrates are typically mounted to a support. In modular beam epitaxy, mounting is done using indium as a solder. This method...
87	4811077	Compound semiconductor surface termination A surface termination of a compound semiconductor is provided wherein conditions are provided for a pristine surface to be retained in an unpinned condition and a surface layer of a non-metallic...
88	4804633	Silicon-on-insulator substrates annealed in polysilicon tube A silicon-on-insulator substrate having a very low threading dislocation density is made by implanting oxygen ions into a silicon substrate while heating the substrate to form a layer of silicon...
89	4757369	Group III-V semiconductor electrical contact A layer of an amphoteric dopant on the surface of a group III-V intermetallic semiconductor crystal will diffuse into the crystal surface in a heating cycle forming a stable contact. The contact...
90	4746377	Semiconductor device with thermally oxidized insulating and arsenic diffusion layers In a surface region of a silicon semiconductor substrate (10), an arsenic diffusion layer (20) having a surface arsenic concentration of 5×10 18 cm -3 to 5×10 19 cm -3 is formed and then, the...
91	4729816	Isolation formation process with active area protection An isolation formation process that minimizes bird's beak encroachment and preserves gate oxide integrity in the active region. Future active areas are protected by a structure having a central...
92	4717631	Silicon oxynitride passivated semiconductor body and method of making same A semiconductor body with an improved passivating layer is disclosed. In one embodiment, the body is a device comprising a semiconductor material having regions of opposite conductivity types which...
93	4676845	Passivated deep p/n junction A passivated deep p/n junction obtained by ion implantation is disclosed. The passivated deep p/n junction is formed in a wafer, preferably a silicon wafer, thus providing an emitter region that is...
94	4657602	Integrated complementary transistor circuit at an intermediate stage of manufacturing An integrated complementary transistor circuit at an intermediate stage of manufacturing comprises a semiconductor substrate having dopant atoms of a first conductivity type and having a...
95	4645546	Semiconductor substrate Disclosed is a silicon semiconductor substrate for a semiconductor integrated circuit such as LSI or VLSI. The silicon semiconductor substrate has an oxygen concentration ranging from 3×10 17 cm...
96	4639277	Semiconductor material on a substrate, said substrate comprising, in order, a layer of organic polymer, a layer of metal or metal alloy and a layer of dielectric material There is disclosed a substrate having thereon a layer of a semiconductor material, and a method for depositing and heating the semiconductor material on the substrate, wherein the substrate...
97	4623403	Indexing of laser beam for programming VLSI devices A target for a laser beam consists of a plurality of closely spaced lines that causes the generation of an readily-identifiable read-out so that the laser beam can be indexed when performing laser...
98	4608097	Method for producing an electronically passivated surface on crystalline silicon using a fluorination treatment and an organic overlayer A method is described for producing an electronically passivated stable surface on silicon wafers. The passivation technique consists of first fluorinating the surface of a crystalline silicon...
99	4608096	Gettering Semiconductor substrate materials, such as silicon, useful in the manufacture of electronic devices, such as integrated circuits, employing low temperature, i.e., below 1025° C. processing cycles...
100	4560422	Method for forming integrated circuits bearing polysilicon of reduced resistance A method for fabricating polysilicon of reduced resistance that may be incorporated in silicon integrated chip manufacturing processes which comprises coating a wafer bearing dielectrically...

Matches 51 - 100 out of 245

< 1 2 3 4 5 >