Matches 201 - 250 out of 264 < 1 2 3 4 5 6 >
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4354198 Zinc-sulphide capping layer for gallium-arsenide device  
The disclosure provides for the use of a group II-VI compound semiconductor as a surface passivator to control recombination of charge carriers at the surface of a group III-V compound...
4336099 Method for producing gallium arsenide single crystal ribbons  
The single crystal growth of GaAs is highly anisotropic under certain conditions. A wafer of GaAs is masked and exposed to the vapor only through a long, narrow slot in the <110> direction. A...
4332974 Multilayer photovoltaic cell  
A new high efficiency, multijunction photovoltaic solar cell for use with a concentrating lens. This cell comprises an elemental single crystal substrate without an internal light sensitive...
4320251 Ohmic contacts for solar cells by arc plasma spraying  
The method of applying ohmic contacts to a semiconductor, such as a silicon body or wafer used in solar cells, by the use of arc plasma spraying, and solar cells resulting therefrom.
4308078 Method of producing single-crystal semiconductor films by laser treatment  
A method is disclosed for producing single-crystal semiconductor films. A thin layer of semiconductor single-crystal material is grown on a substrate having a lower melting point temperature than...
4295002 Heterojunction V-groove multijunction solar cell  
A solar cell is disclosed with V-grooves which are series connected, but electrically isolated, indirect bandgap solar cells which are responsive to different light frequencies on both sides of a...
4291323 Indium phosphide arsenide based devices  
Devices based on InAs 1 -x P x where 0.85≤x<1 show advantageous properties. An exemplary device is a rectifying diode formed from indium tin oxide deposited on the subject InAs 1 -x P x .
4278474 Device for conversion of electromagnetic radiation into electrical current  
Electromagnetic energy may be converted directly into electrical energy by a device comprising a sandwich of at least two semiconductor portions, each portion having a p-n junction with a...
4278830 Schottky barrier solar cell  
A Schottky barrier solar cell consists of a thin substrate of low cost material with at least the top surface of the substrate being electrically conductive. A thin layer of heavily doped n-type...
4276137 Control of surface recombination loss in solar cells  
Surface recombination in solar cells that is produced by band bending at the surface of the semiconductor which is in turn caused by defect states which pin the Fermi level at the surface, may be...
4273594 Gallium arsenide devices having reduced surface recombination velocity  
Semiconductor devices using chemically treated n-type GaAs have greatly reduced surface recombination velocities. A preferred embodiment uses fractional monolayers of ruthenium on the GaAs surface.
4255211 Multilayer photovoltaic solar cell with semiconductor layer at shorting junction interface  
A new high efficiency, multijunction photovoltaic solar cell for use with a concentration lens. This cell comprises an elemental single crystal substrate without an internal light sensitive...
4248675 Method of forming electrical contact and antireflection layer on solar cells  
A method of applying an electrical contact and an anodic reflection coating to an n + layer of a direct gap semiconductor device, comprising applying an anodizable metal contact to the n + ...
4246050 Lattice constant grading in the Al.sub.y Ca.sub.1-y As.sub.1-x Sb.sub.x alloy system  
Liquid phase epitaxy is employed to grow a lattice matched layer of GaAsSb on GaAs substrates through the compositional intermediary of the III-V alloy system AlGaAsSb which acts as a grading...
4235651 Fabrication of GaAs-GaAlAs solar cells  
The specification describes an improved III-V compound solar cell structure and fabrication process therefor wherein a P-type layer of gallium aluminum arsenide is epitaxially grown on an N-type...
4227943 Schottky barrier solar cell  
A solar cell is constructed by coating an n-type conductivity semiconductor with a thin layer of bromine doped, polymeric sulfur-nitride, (SNBr 0 .4) x . Metal deposits are provided on both...
4227941 Shallow-homojunction solar cells  
Improvements in shallow-homojunction solar cells based upon a plurality of layers of a direct gap semiconductor material such as GaAs, as well as their fabrication, are disclosed. The...
4213801 Ohmic contact of N-GaAs to electrical conductive substrates by controlled growth of N-GaAs polycrystalline layers  
Thin layers of polycrystalline n-type GaAs have been deposited on a conducting substrate such as graphite. These contacted GaAs layers exhibit desirable properties for device applications, i.e.,...
4207586 Semiconductor device having a passivating layer  
A semiconductor device includes a passivating layer to reduce and stabilize the surface recombination rate. The passivating layer is of polycrystalline semiconductor material and is of the same...
4197141 Method for passivating imperfections in semiconductor materials  
A method of passivating imperfections, such as grain boundaries and/or dislocations, in semiconductor materials is disclosed which comprises selectively passing electrical current along the...
4195305 Lattice constant grading in the Al.sub.y Ga.sub.1-y As.sub.1-x Sb.sub.x alloy system  
Liquid phase epitaxy is employed to grow a lattice matched layer of GaAsSb on GaAs substrates through the compositional intermediary of the III-V alloy system AlGaAsSb which acts as a grading...
4191593 Double heterojunction solar cells  
Photovoltaic cell comprising two heterojunctions between three component semiconductors Ga 1 -x AL x As with x varying from 0 to 0.9, GaAs, and Ge which have respective bandgaps of 0.66, 1.43 and...
4179702 Cascade solar cells  
A monolithic cascade cell for converting incident radiation, particularly solar radiation, into electrical energy at a high efficiency with at least three layers of semi-conductive Group III-IV...
4179308 Low cost high efficiency gallium arsenide homojunction solar cell incorporating a layer of indium gallium phosphide  
A new low cost high efficiency gallium arsenide homojunction solar cell incorporating a passivating surface layer of indium gallium phosphide. The thickness of the indium gallium phosphide layer is...
4178195 Semiconductor structure  
A technique for fabricating a semiconductor heterostructure by growth of a ternary semiconductor on a binary semiconductor substrate from a melt of the ternary semiconductor containing less than...
4165558 Fabrication of photovoltaic devices by solid phase epitaxy  
Fabrication of photovoltaic devices by solid phase epitaxy; devices produced by this method consisting of a semiconductor base and a semiconductor junction-forming epitaxial layer. The epitaxial...
4163987 GaAs-GaAlAs solar cells  
The specification describes an improved III-V compound solar cell structure and fabrication process therefor wherein a P-type layer of gallium aluminum arsenide is epitaxially grown on an N-type...
4158577 High output solar cells  
A high output solar cell comprises a three-layer semiconductor compound article, the layers being doped in pn 1 n 2 order in the direction of light travel, the pn 1 junction being a homojunction...
4156310 High bandgap window layer for gaas solar cells and fabrication process therefor  
The specification describes a semiconductor solar cell and fabrication process therefor wherein a thin N-type gallium arsenide layer is deposited on a larger P-type substrate layer which is...
4154625 Annealing of uncapped compound semiconductor materials by pulsed energy deposition  
Damaged semiconductor materials are annealed using localized short term energy deposition. In a specific embodiment gallium arsenide damaged during ion implantation is annealed by exposure to short...
4128733 Multijunction gallium aluminum arsenide-gallium arsenide-germanium solar cell and process for fabricating same  
The specification describes a gallium aluminum arsenide-gallium arsenide-germanium solar cell and fabrication process therefor wherein the deposition of a layer of gallium aluminum arsenide...
4128843 GaP Directed field UV photodiode  
A GaP photodiode having a shallow PN junction and an internal directed surface electric field exhibits high quantum efficiency in detecting ultraviolet wavelengths.
4126930 Magnesium doping of AlGaAs  
Aluminum gallium arsenide is used as a transparent, conducting contact layer on the exposed surface of a gallium arsenide photovoltaic cell. Increased conductivity for the high current generated...
4122407 Heterostructure junction light emitting or responding or modulating devices  
Practice of this disclosure reduces the concentration of intrinsic defects heretofore grown into semiconducting materials. Thereby, the operational lifetime is increased of heterostructure junction...
4122476 Semiconductor heterostructure  
A technique for fabricating a semiconductor heterostructure by growth of a ternary semiconductor on a binary semiconductor substrate from a melt of the ternary semiconductor containing less than...
4116717 Ion implanted eutectic gallium arsenide solar cell  
An improved gallium arsenide solar cell is provided by ion implanting both the top and bottom of a plural vertical PN junction eutectic gallium arsenide cell body to obtain an electrical drift...
4104091 Application of semiconductor diffusants to solar cells by screen printing  
Diffusants are applied onto semiconductor solar cell substrates using screen printing techniques. The method is applicable to square and rectangular cells and can be used to apply dopants of...
4070205 Aluminum arsenide eutectic gallium arsenide solar cell  
An improved gallium arsenide solar cell is provided by forming a P+ layer on top of a wafer of plural vertical PN junction eutectic gallium arsenide crystal by liquid phase epitaxial growth of P...
4062698 Photoelectrical converter  
Photoelectrical conversion cells may be assembled on an electrically conducting heat sink and each may be electrically isolated therefrom by employing insulating substrate material between the...
4053918 High voltage, high current Schottky barrier solar cell  
A Schottky barrier solar cell is disclosed, consisting of a layer of wide band gap semiconductor material such as AlGaAs on which a very thin film of semi-transparent metal is deposited to form a...
4034396 Light sensor having good sensitivity to visible light  
A light sensor includes a body of semiconductor material having an energy gap within the range of between 1.65 eV and 2.0 eV and a main surface. A rectifying junction is formed in the body of...
4017332 Solar cells employing stacked opposite conductivity layers  
A cell for converting received light energy to electrical energy comprises, in the simplest embodiment, four layers of differing types of semiconductive material stacked so as to form three...
4016586 Photovoltaic heterojunction device employing a wide bandgap material as an active layer  
A semiconductive heterojunction device particularly useful as a photovoltaic device such as a solar cell comprises a heterojunction formed between a first layer of semiconductor material exhibiting...
3995303 Growth and operation of a step-graded ternary III-V heterojunction p-n diode photodetector  
In an infrared photodetection apparatus a photodetector diode is used which comprises a heterojunction of two epitaxial layers of differing compositions of a ternary III-V semiconductive alloy,...
3993533 Method for making semiconductors for solar cells  
The invention relates to a method for producing a desired thin semiconductor film for use in solar cells. The desired semiconductor is grown epitaxially on a second semiconductor film which may be...
3993506 Photovoltaic cell employing lattice matched quaternary passivating layer  
A photovoltaic cell has an active portion comprising at least one active layer of a IIIA-VA compound having a p-n junction adjacent an upper surface thereof and an overlying epitaxially grown...
3990101 Solar cell device having two heterojunctions  
A body of semiconductor material of a solar cell device has a surface a portion of which is exposed to incident solar radiation, and a surface opposite the incident surface. At the incident surface...
3982265 Devices containing aluminum-V semiconductor and method for making  
A high efficiency solar cell having n-type aluminum arsenide grown on a p-type gallium arsenide substrate and protected by a layer of anodic oxide. The aluminum arsenide is deposited by vapor phase...
3976872 Gallium phosphide photodetector having an as-grown surface and producing an output from radiation having energies of 2.2 eV to 3.8 eV  
Anomalously large photoresponse to radiation of energies between about 2.8 eV and about 3.8 eV has been observed in certain gallium phosphide photodetectors having an "as-grown" surface. This...
3679949 SEMICONDUCTOR HAVING TIN OXIDE LAYER AND SUBSTRATE  
A semiconductor composite having a rectifying characteristic is provided by depositing a tin oxide film on a semiconductor substrate. In view of the fact that the tin oxide film has high...
Matches 201 - 250 out of 264 < 1 2 3 4 5 6 >