Matches 151 - 200 out of 264 < 1 2 3 4 5 6 >
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4830984 Method for heteroepitaxial growth using tensioning layer on rear substrate surface  
A method, and products formed by such method, of providing a substantially planar surface to a layer of semiconducting material (24) formed on a first surface of a substrate (20), the substrate...
4781766 Fault tolerant thin-film photovoltaic cell and method  
A thin-film solar cell is made up of semiconductor layers formed on an aluminum silicon eutectic alloy substrate. The substrate includes an aluminum oxide insulator containing electrically...
4775639 Method of manufacturing Group III-V compound semiconductor solar battery  
After a liquid-phase epitaxial growth step by an n-type GaAs saturated solution is terminated, a substrate is temporarily dipped in an undoped GaAs saturated or supersaturated solution, and...
4774194 Process for manufacturing a solar cell device  
A process for manufacturing a solar cell device, including the steps of (1) forming, on a semiconductor substrate, a removable layer having a crystal lattice structure identical or similar to that...
4773945 Solar cell with low infra-red absorption and method of manufacture  
A cell for using solar radiation to generate electrical power comprises a direct band gap (or high absorption coefficient) substrate which is formed with at least one hole that extends from one...
4759803 Monolithic solar cell and bypass diode system  
A protected solar cell including a monolithic bypass diode is formed by adding an additional layer of semiconductive material having a type opposite to the outermost semiconductive layer of a solar...
4753683 Gallium arsenide solar cell system  
A solar cell array utilizing geometrically alternating, laterally disposed N-on-P and P-on-N gallium arsenide solar cells is disclosed. Improved array efficiency is achieved by placing adjacent...
4725559 Process for the fabrication of a gallium arsenide grating solar cell  
A photovolatic device is disclosed comprising a p-type conductive substrate, a sandwich of p-type Al y Ga (1-y) As bottom layer/p-type GaAs base layer/p-type Al y Ga (1-y) As top layer (wherein...
4710254 Process for fabricating a solar energy converter employing a fluorescent wavelength shifter  
Disclosed herein is a solar converter structure and fabrication process therefor which includes a composite zinc selenide fluorescent wavelength shifter (FWS) prepared with anti-reflective (AR)...
4710588 Combined photovoltaic-thermoelectric solar cell and solar cell array  
A solar cell generates an electrical voltage with contributions from both photovoltaic and thermoelectric effects, when a high thermal gradient is impressed across a semiconductor p/n solar cell....
4698455 Solar cell with improved electrical contacts  
A gallium arsenide solar cell is disclosed which employs a front aluminum gallium arsenide window layer. Metallic grid lines for charge carrier collection traverse the window layer and extend...
4694115 Solar cell having improved front surface metallization  
A gallium arsenide solar cell is disclosed having an aluminum gallium arsenide window layer in which fine metallic contact lines extend through the aluminum gallium arsenide window to electrically...
4692559 Thin GaAs solar cell structures  
A process for fabricating layered semiconductor structures, particularly thin gallium arsenide solar cells, on reusable substrates. The structure is fabricated by depositing a selectively removable...
4681983 Semiconductor solar cells  
A photovoltaic solar cell comprises a piece of semiconductor material incorporating a p-type region, an n-type region, a p-n junction between the two, electrodes contacting the two regions, and...
4657603 Method for the manufacture of gallium arsenide thin film solar cells  
A method for the manufacture of gallium arsenide thin film solar cells on inexpensive substrate material whereby an intermediate layer of highly doped, amorphous germanium is employed in order to...
4642414 Solar cell  
The invention relates to a solar cell, wherein, in order to increase the efficiency, an amorphous or microcrystalline silicon layer is disposed on the side facing the incident light, thereby...
4633030 Photovoltaic cells on lattice-mismatched crystal substrates  
A photovoltaic cell formed on a crystal substrate in which the lattice constant of the material of which the substrate is composed differs from the lattice constant of crystal material of which at...
4596626 Method of making macrocrystalline or single crystal semiconductor material  
A macrocrystalline or single crystal semiconductive material is formed from a primary substrate including a single crystal or several very large crystals of a relatively low-melting material. This...
4591654 Solar cells based on indium phosphide  
An InP solar cell having a p-type InP single crystal substrate having a carrier concentration of 2×10 16 -2×10 18 cm -3 , an n-type InP layer containing a dopant of at least one element...
4588451 Metal organic chemical vapor deposition of 111-v compounds on silicon  
Expitaxial composite comprising thin films of a Group III-V compound semiconductor such as gallium arsenide (GaAs) or gallium aluminum arsenide (GaAlAs) on single crystal silicon substrates are...
4584428 Solar energy converter employing a fluorescent wavelength shifter  
Disclosed herein is a solar converter structure and fabrication process therefor which includes a composite zinc selenide fluorescent wavelength shifter (FWS) prepared with anti-reflective (AR)...
4582952 Gallium arsenide phosphide top solar cell  
An improved tandem solar cell includes a gallium arsenide phosphide top solar cell and silicon bottom solar cell. The gallium arsenide phosphide solar cell is fabricated on a transparent gallium...
4581108 Process of forming a compound semiconductive material  
A process of forming a compound semiconductive material having a plurality of constituent elements comprising electrodepositing a plurality of such constituent elements and subsequently heating the...
4575577 Ternary III-V multicolor solar cells containing a quaternary window layer and a quaternary transition layer  
Two- and three-terminal ternary III-V two-color and three-color solar cells which incorporate GaAs 1 -x-y P x Sb y transparent window layers are described. The window layers lower the surface...
4564720 Pure silver ohmic contacts to N- and P- type gallium arsenide materials  
Disclosed is an improved process for manufacturing gallium arsenide semiconductor devices having as its components an n-type gallium arsenide substrate layer and a p-type gallium arsenide diffused...
4548658 Growth of lattice-graded epilayers  
A method is disclosed for growing an epitaxial layer composed of semiconductor material belonging to the cubic crystal system on a substrate, where the lattice constant of the epitaxial layer is...
4547622 Solar cells and photodetectors  
An improved photovoltaic device in which a charge separation junction is provided over a charge confining heterojunction. The charge separation junction is a junction formed of an n + -doped...
4544799 Window structure for passivating solar cells based on gallium arsenide  
Passivated gallium arsenide solar photovoltaic cells with high resistance to moisture and oxygen are provided by means of a gallium arsenide phosphide window graded through its thickness from...
4543442 GaAs Schottky barrier photo-responsive device and method of fabrication  
A gallium arsenide photo-responsive device (40) is provided with an intermediate, transparent layer (28) of refractory metal or alkaline earth metal forming a tenacious bond between a...
4525731 Semiconductor conversion of optical-to-electrical energy  
Optical-to-electrical conversion is accomplished using an undoped region bounded by a tunneling junction of the order of the mean free path of an electron. A number of regions are assembled in...
4503089 Method for producing semiconductor devices  
A composite article, and method for producing the same, said article being adapted for use as a semiconductor device. The composite article comprises and is produced by depositing on a first layer...
4494302 Accelerated annealing of gallium arsenide solar cells  
A method is provided for accelerating and improving the recovery of GaAs solar cells from the damage which they experience in space under high energy particle irradiation such as electrons, protons...
4493941 Hetero-face solar cell and method of manufacturing the same  
In a hetero-face type solar cell, an impurity concentration distribution is formed in the cell element so as to provide an accelerative electric field therein. As a result, electrons are...
4492811 Heterojunction photovoltaic device  
A heterojunction photovoltaic device, containing a highly conductive coating material having a band gap greater than 0 to about 3.0 e.V. on a substrate containing a semiconductor material, is...
4490573 Solar cells  
A solar cell comprising layers of n-type and p-type crystalline or substantially crystalline semiconductor material separated by a layer of amorphous semiconductor material having a larger...
4451691 Three-terminal ternary III-V multicolor solar cells and process of fabrication  
Three-terminal ternary III-V two-color solar cells incorporating layers of GaAs 1 -x-y P x Sb y . The three-terminal structure enables the current to be withdrawn from both cells without the...
4427841 Back barrier heteroface AlGaAs solar cell  
This is an improvement to the AlGaAs/GaAs heteroface solar cell in that the photovoltaically active region is composed of AlGaAs of low Al composition (approximately 2% to 10%) and is bounded by...
4427714 Thin films of compounds and alloy compounds of Group III and Group V elements  
A thin film of a compound or alloy compound of Group III and Group V elements, particularly of gallium arsenide or gallium arsenide compounds, is produced by impinging, e.g. spraying, onto a heated...
4421577 Method for making Schottky barrier diodes with engineered heights  
Schottky barrier diodes with engineered barrier heights in III-V semiconductor material are disclosed. By fabricating the diodes using a very clean and defect free surface, the barrier height can...
4419178 Continuous ribbon epitaxy  
A process for growing an epitaxial ribbon of mono-crystalline material involves formation of an endless belt of monocrystalline composition. The belt is driven about a closed path to bring portions...
4416052 Method of making a thin-film solar cell  
A method of making a thin gallium arsenide solar cell having a reflecting back surface and coplanar electrical contacts. A photovoltaic cell comprising gallium arsenide is produced in a...
4400221 Fabrication of gallium arsenide-germanium heteroface junction device  
Doping with one of the group Ia elements Li, Na or K near the heteroface junction produced P+ conductivity in the gallium arsenide and N+ conductivity in the germanium. The device can be used, for...
4396456 Method of peeling epilayers  
A method is disclosed for peeling thin epitaxially grown crystalline layers (epilayers) from the substrates on which they have been grown. A thin layer of single-crystal is epitaxially grown on a...
4392297 Process of making thin film high efficiency solar cells  
Process of making thin film materials for high efficiency solar cells on low-cost silicon substrates. The process comprises forming a low-cost silicon substrate, forming a graded transition region...
4388383 Devices having chemically modified p-type InP surfaces  
Semiconductor devices comprising p-type phosphorus containing semiconductor materials chosen from InP, GaP and InGaAsP have chemically treated surfaces comprising a monolayer or less of a metal...
4385198 Gallium arsenide-germanium heteroface junction device  
Doping with one of the Group Ia elements Li, Na or K near the heteroface junction produces P+ conductivity in the gallium arsenide and N+ conductivity in the germanium. The device can be used, for...
4370510 Gallium arsenide single crystal solar cell structure and method of making  
A production method and structure for a thin-film GaAs crystal for a solar cell on a single-crystal silicon substrate (10) comprising the steps of growing a single-crystal interlayer (12) of...
4366334 Photovoltaic cell usable as a solar cell  
The invention relates to a low cost photovoltaic cell, using a minimum thickness layer of semiconductor compounds able to provide the photovoltaic effect and specifically in polycrystalline form....
4366338 Compensating semiconductor materials  
A method of compensating grain boundaries or dislocations causing interstices to form particularly in polycrystalline semiconductor materials is disclosed which comprises selectively diffusing...
4357183 Heteroepitaxy of germanium silicon on silicon utilizing alloying control  
A method and apparatus is described for producing Ge or a Ge 1 -x Si x heteroepitaxy film on Si by depositing films of Ge or Ge 1 -x Si x on Si and subjecting the body so formed to a controlled...
Matches 151 - 200 out of 264 < 1 2 3 4 5 6 >