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7381344 |
Method to reduce particle level for dry-etch
The invention teaches a multi-step method for shutting down the dry-etch process. The ICP rf power is reduced between each of these consecutive power-down steps of the dry-etch process, the...
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7372049 |
Lithographic apparatus including a cleaning device and method for cleaning an optical element
An EUV lithographic apparatus includes an EUV radiation source, an optical element and a cleaning device. The cleaning device includes a hydrogen radical source and a flow tube in communication...
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7368397 |
Method for monitoring edge bead removal process of copper metal interconnection
Disclosed is a method for monitoring an edge bead removal process for a copper metal interconnection. The method includes the steps of (a) forming a copper metal layer on a semiconductor wafer, (b)...
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7368020 |
Reduced particle contamination manufacturing and packaging for reticles
A method of transporting a reticle is disclosed. The reticle is placed in a reticle carrier that has an ionizer. Moreover, the reticle may be attached with a pellicle. The pellicle consists of a...
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7367344 |
Atmospheric pressure non-thermal plasma device to clean and sterilize the surfaces of probes, cannulas, pin tools, pipettes and spray heads
The present invention relates to methods and apparatus for the use of atmospheric pressure non-thermal plasma to clean and sterilize the surfaces of liquid handling devices. In one embodiment, a...
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7357138 |
Method for etching high dielectric constant materials and for cleaning deposition chambers for high dielectric constant materials
A process for the removal of a substance from a substrate for etching and/or cleaning applications is disclosed herein. In one embodiment, there is provided a process for removing a substance...
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7354865 |
Method for removal of pattern resist over patterned metal having an underlying spacer layer
A method of removing the pattern resist that remains on a microchip wafer after etching a patterned layer that is supported by a spacer layer. After the etch, the wafer is cleaned with a develop...
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7354525 |
Specimen surface processing apparatus and surface processing method
For a surface processing apparatus using a plasma, a mixed gas of a fluorine-containing gas and an oxygen gas is used as an ashing gas. A mixed gas of an oxygen gas and a fluorine-containing gas is...
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7338904 |
Method for manufacturing single-side mirror surface wafer
A surface of a semiconductor wafer which has been lapped is ground. This removes a damage caused on the wafer surface during lapping, thereby increasing the flatness of the wafer surface. Next, the...
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7326503 |
Process for color filter array residual pigment removal
A method of fabricating a color filter array including the removal of unwanted residual color pigments. A substrate is coated with a colored photoresist layer. The photoresist layer is patterned....
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7322368 |
Plasma cleaning gas and plasma cleaning method
A plasma cleaning gas for CVD chamber is a gas for cleaning silicon-containing deposits on the surface of a CVD chamber inner wall and the surfaces of members placed inside the CVD chamber after...
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7320331 |
In-situ plasma cleaning device for cylindrical surfaces
An in-situ plasma cleaning device (PCD) performs an atomic surface cleaning process to remove contaminants and/or to modify the cylindrical surfaces of both the target and substrate. The atomic...
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7297286 |
Methods for resist stripping and other processes for cleaning surfaces substantially free of contaminants
A method for manufacturing an article having polymeric residue that is to be removed during the manufacture of the article is disclosed. The article is introduced into a controlled environment of a...
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7291286 |
Methods for removing black silicon and black silicon carbide from surfaces of silicon and silicon carbide electrodes for plasma processing apparatuses
Methods for removing black silicon or black silicon carbide from a plasma-exposed surface of an upper electrode of a plasma processing chamber are provided. The methods include forming a plasma...
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7279428 |
Method of preventing photoresist residues
A method to prevent photoresist residues formed in an aperture is provided. The method includes using a halogen-containing plasma treatment before the aperture is filled with a photoresist. Due to...
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7270761 |
Fluorine free integrated process for etching aluminum including chamber dry clean
A fluorine-free integrated process for plasma etching aluminum lines in an integrated circuit structure including an overlying anti-reflection coating (ARC) and a dielectric layer underlying the...
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7267842 |
Method for removing titanium dioxide deposits from a reactor
A process for the selective removal of a TiO 2 -containing substance from an article for cleaning applications is disclosed herein. In one embodiment, there is provided a process for removing a TiO...
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7255772 |
High pressure processing chamber for semiconductor substrate
A high pressure chamber comprises a chamber housing, a platen, and a mechanical drive mechanism. The chamber housing comprises a first sealing surface. The platen comprises a region for holding the...
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7252773 |
Clean for high density capacitors
One aspect of the invention relates to a method of cleaning high density capacitors. According to the method, the capacitors are cleaned with a plasma that includes fluorine-containing radicals....
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7244681 |
Methods for selective removal of material from wafer alignment marks
A process and apparatus for locally removing any material, such as a refractory metal, in particular tungsten, from any desired area of a wafer, such as an alignment mark area of a silicon wafer in...
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7244313 |
Plasma etch and photoresist strip process with intervening chamber de-fluorination and wafer de-fluorination steps
A plasma etch process includes a plasma etch step performed with a photoresist mask on a workpiece using a polymerizing etch process gas that produces in the plasma polymerizing species which...
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7235516 |
Semiconductor cleaning composition comprising an ethoxylated surfactant
A substrate surface cleaning liquid medium and a cleaning method using the cleaning liquid medium are capable of removing finely particulate contaminants more efficiently than conventional...
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7235492 |
Low temperature etchant for treatment of silicon-containing surfaces
In one embodiment of the invention, a method for finishing or treating a silicon-containing surface is provided which includes removing contaminants and/or smoothing the surface contained on the...
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7234476 |
Method of cleaning CVD equipment processing chamber
A method of remote plasma cleaning a processing chamber of CVD equipment, which has high cleaning rates, low cleaning operational cost and high efficiency, is provided. The method comprises...
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7232492 |
Method of forming thin film for improved productivity
There is provided a method of forming a thin film for providing improved fabrication productivity. The method includes introducing a semiconductor substrate into a process chamber. A process thin...
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7228865 |
FRAM capacitor stack clean
An embodiment of the invention is a method of cleaning a material stack 2 that has a hard mask top layer 8 . The method involves cleaning the material stack 2 with a fluorine-based plasma...
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7223446 |
Plasma CVD apparatus and dry cleaning method of the same
In a parallel flat plate type plasma CVD apparatus, plasma damage of constituent parts in a reaction chamber due to irregularity of dry cleaning in the reaction chamber is reduced and the cost is...
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7217941 |
Systems and methods for deflecting plasma-generated ions to prevent the ions from reaching an internal component of an EUV light source
A system is disclosed for protecting an internal EUV light source component from ions generated at a plasma formation site. In one aspect, the system may comprise a plurality of foil plates and an...
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7207339 |
Method for cleaning a plasma enhanced CVD chamber
A method for plasma cleaning a CVD reactor chamber including providing a plasma enhanced CVD reactor chamber comprising residual deposited material; performing a first plasma process comprising an...
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7204935 |
Method of etching a metallic film on a substrate
A method of etching a metallic film on a substrate. This method operates to inject an oxidizing agent through the use of a carrier gas to etch a source metal in the presence of a reducing agent...
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7201174 |
Processing apparatus and cleaning method
In a chamber ( 11 ), a SiOF film is formed on a wafer W using a plasma CVD method. A film remaining inside the chamber ( 11 ) is cleaned up using a gas containing NF 3 . A manometer ( 28 ) is...
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7195021 |
In-situ cleaning of light source collector optics
A method for cleaning optics in a chamber. The method can include introducing a first etchant into a chamber that encloses an optical component and a source of electromagnetic radiation that is...
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7192886 |
Method for using additives in the caustic etching of silicon for obtaining improved surface characteristics
A method for the caustic etching of silicon which is of importance for the semiconductor industry and silicon wafer manufacture in particular, that includes using one or more iodate or chlorite...
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7183220 |
Plasma etching methods
A plasma etching method includes forming a polymer comprising carbon and a halogen over at least some internal surfaces of a plasma etch chamber. After forming the polymer, plasma etching is...
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7181306 |
Enhanced plasma etch process
A method of operating a plasma etcher wherein gas is introduced into the etcher at a substantially higher rate than a previous standard rate for a desired etch selectivity, and the throttle valve's...
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7175875 |
Method and apparatus for plasma processing
The apparatus for processing an in-process substrate by generating a plasma have a processing chamber with an observation window, in which the in-process substrate is disposed; plasma generating...
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7172977 |
Method for non-destructive removal of cured epoxy from wafer backside
Disclosed is a method for non-destructive removal of cured epoxy from a wafer backside. A wafer back-coated with epoxy is soaked in an acetone bath for a period of time, allowing degradation of the...
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7169440 |
Method for removing photoresist and etch residues
A method is provided for plasma ashing to remove photoresist remnants and etch residues that are formed during preceding plasma etching of dielectric layers. The ashing method uses a two-step...
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7166534 |
Method of dry cleaning photoresist strips after via contact etching
Semiconductor manufacturing processes that reduce production costs as well as increase throughput by substituting the PR strip and ACT wet cleaning procedure after the via contact etching of a...
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7160812 |
Method for preventing electrode deterioration in etching apparatus
A method for preventing the deterioration of an electrode caused by the build up of deposits in openings of the electrode. Gas is supplied to each of the openings in order to prevent deposits from...
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7159597 |
Multistep remote plasma clean process
A process for removing unwanted deposition build-up from one or more interior surfaces of a substrate processing chamber after depositing a layer of material over a substrate disposed in the...
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7150796 |
Method of removing PECVD residues of fluorinated plasma using in-situ H2 plasma
In a method of affecting cleaning or chamber process control to remove residues of fluorinated discharges from internal PECVD chamber hardware during manufacture of a semiconductor or integrated...
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7147722 |
Method for in-situ cleaning of carbon contaminated surfaces
Activated gaseous species generated adjacent a carbon contaminated surface affords in-situ cleaning. A device for removing carbon contamination from a surface of the substrate includes (a) a...
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7140374 |
System, method and apparatus for self-cleaning dry etch
A method for cleaning a processing chamber that includes heating an inner surface of the processing chamber to a first temperature. The first temperature can be sufficient to cause a first species...
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7125583 |
Chemical vapor deposition chamber pre-deposition treatment for improved carbon doped oxide thickness uniformity and throughput
A method for improving thickness uniformity and throughput of a carbon doped oxide deposition process is described. That method comprises removing pre-deposition steps in a deposition phase....
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7115522 |
Method for manufacturing semiconductor device
A method for manufacturing a semiconductor device including a substrate to be processed having a conductive layer essentially consisting of platinum includes etching the conductive layer, and...
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7112546 |
Method of manufacturing semiconductor devices comprising a deposition tool cleaning process having a moving plasma zone
The present invention provides, in one embodiment, a method of manufacturing semiconductor devices. The method comprises transferring one or more substrate into a deposition chamber and depositing...
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7105102 |
Vacuum plasma processor having a chamber with electrodes and a coil for plasma excitation and method of operating same
A vacuum plasma processor includes a roof structure including a dielectric window carrying (1) a semiconductor plate having a high electric conductivity so it functions as an electrode, (2) a...
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7101260 |
Methods for resist stripping and other processes for cleaning surfaces substantially free of contaminants
A method for manufacturing an article where the article has polymeric residue that is to be removed during the manufacture of the article. The article is introduced into a controlled environment of...
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7097716 |
Method for performing fluorocarbon chamber cleaning to eliminate fluorine memory effect
A method of cleaning a plasma etching reactor is provided. The method of cleaning a plasma etching reactor includes generating one or more plasmas from oxygen gas and a hydrogen-containing gas, and...
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