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7620511 |
Method for determining plasma characteristics
Methods for determining characteristics of a plasma are provided. In one embodiment, a method for determining characteristics of a plasma includes obtaining metrics of current and voltage...
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7595098 |
Method and apparatus for depositing material on a substrate
A method and apparatus for depositing material on a substrate is provided in which material ( 4 ) is deposited on a substrate ( 8 ) by arranging the material in a container ( 2 ), and contacting...
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7389580 |
Method and apparatus for thin-film battery having ultra-thin electrolyte
A method and system for fabricating solid-state energy-storage devices including fabrication films for devices without an anneal step. A film of an energy-storage device is fabricated by depositing...
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H002212 |
Method and apparatus for producing an ion-ion plasma continuous in time
An ion-ion plasma source, that features a processing chamber containing a large concentration of halogen or halogen-based gases. A second chamber is coupled to the processing chamber and features...
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7194801 |
Thin-film battery having ultra-thin electrolyte and associated method
A method and system for fabricating solid-state energy-storage devices including fabrication films for devices without an anneal step. A film of an energy-storage device is fabricated by depositing...
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7094312 |
Focused particle beam systems and methods using a tilt column
Particle beam systems and methods for interacting with a workpiece according to this invention include a work stage assembly and a first particle beam source. The work stage assembly is adapted a)...
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7014889 |
Process and apparatus for plasma activated depositions in a vacuum
Plasma deposition apparatus ( 1 ) and method that allows metal or nonmetal vapor ( 6 ) to be generated by electron-beam evaporation, guides that vapor using a noble gas stream (containing reactive...
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6988463 |
Ion beam source with gas introduced directly into deposition/vacuum chamber
An ion source is provided wherein depositing gas and/or maintenance gas is/are introduced into the ion source via the vacuum/depositing chamber, thereby reducing the amount(s) of undesirable...
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6983718 |
Electron beam physical vapor deposition apparatus
An electron beam physical vapor deposition (EBPVD) apparatus and a method for using the apparatus to produce a coating material (e.g., a ceramic thermal barrier coating) on an article. The EBPVD...
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6918351 |
Apparatus for ion beam implantation
This invention discloses an ion implantation apparatus that has an ion source and an ion extraction device for extracting an ion beam therefrom. The ion implantation apparatus includes an ion beam...
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6853142 |
Methods and apparatus for generating high-density plasma
Methods and apparatus for generating a strongly-ionized plasma are described. An apparatus for generating a strongly-ionized plasma according to the present invention includes an anode and a...
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6688254 |
Vapor deposition temperature control apparatus and method
Coating temperature during vapor deposition of a ceramic coating on a substrate in a coating box or enclosure is maintained by means of a heat release cover or lid on the coating enclosure and...
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6653792 |
Ion implanting system
An ion implanting system including an ion implanting chamber for implanting an ion into a semiconductor wafer, a load lock chamber for loading the semiconductor wafer into the ion implanting...
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6629508 |
Ionizer for gas cluster ion beam formation
A neutral beam ionizing apparatus for electron impact ionization of a substantially cylindrical neutral beam. The apparatus includes an electron source, and a circularly cylindrical ionizing region...
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6319569 |
Method of controlling vapor deposition substrate temperature
Coating temperature during vapor deposition of a ceramic coating on a substrate in a coating box or enclosure is maintained by means of a heat release cover or lid on the coating enclosure and...
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6258173 |
Film forming apparatus for forming a crystalline silicon film
A film forming apparatus includes a silicon film forming vacuum chamber for forming a crystalline silicon film on a substrate; a film forming device provided for the vacuum chamber for forming a...
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6220204 |
Film deposition method for forming copper film
A film deposition apparatus to which the present invention is applied comprises a vacuum chamber 11, a plasma beam generator 13, a main hearth 30 which is disposed within the vacuum chamber and...
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6180049 |
Layer manufacturing using focused chemical vapor deposition
A solid freeform fabrication process and apparatus for making a three-dimensional object. The process includes the steps of (1) positioning a material deposition sub-system a selected distance from...
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6145470 |
Apparatus for electron beam physical vapor deposition
An apparatus for depositing a ceramic coating by electron beam physical vapor deposition (EBPVD). Ceramic coatings of more uniform thickness over a larger surface area are deposited by increasing...
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6126790 |
Method of magnetically orienting thin magnetic films with a multiple-coil electromagnet
An electromagnet assembly magnetically orients a thin magnetic film deposited onto a surface of a substrate. The magnetic orientation can take place in a low-pressure processing environment such as...
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6089186 |
Vacuum coating forming device
The invention provides a vacuum coating forming device for forming a thin-film coating by a plasma beam on a substrate arranged in a vacuum chamber, the vacuum coating forming device being provided...
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6042707 |
Multiple-coil electromagnet for magnetically orienting thin films
An electromagnet assembly magnetically orients a thin magnetic film deposited onto a surface of a substrate. The magnetic orientation can take place in a low-pressure processing environment such as...
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6014944 |
Apparatus for improving crystalline thin films with a contoured beam pulsed laser
A method and apparatus is presented for crystallizing a thin film on a surate by generating a beam of pulsed optical energy, countouring the intensity profile of the beam, and illuminating the thin...
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5948169 |
Apparatus for preventing particle deposition in a capacitance diaphragm gauge
Apparatus for reducing a material deposition in a housing is disclosed herein. The apparatus includes: a first pressure sensing device which senses a pressure in a reaction chamber, a pumping...
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5885354 |
Method and apparatus for processing a specimen
The invention relates to a method and to apparatus for processing a specimen, particularly an integrated circuit, in which an area of the specimen to be processed is scanned with a corpuscular beam...
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5656141 |
Apparatus for coating substrates
Apparatus for coating substrates 31, 31", . . . in a vacuum chamber 2 including a substrate carrier 30 disposed therein and a device 29 for generating a first plasma cloud 28 and, further,...
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5639308 |
Plasma apparatus
A plasma apparatus generates plasma by introducing electron beams into a processing chamber filled with a reactive gas for irradiation of the reactive gas with the introduced electron beams, to...
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5614273 |
Process and apparatus for plasma-activated electron beam vaporization
A process and apparatus for plasma-activated electron beam vaporization is rovided. The vaporizing material from at least two vaporizer crucibles is vaporized with electron beams. An electric...
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5607509 |
High impedance plasma ion implantation apparatus
A high dose rate, high impedance plasma ion implantation method and apparatus to apply high voltage pulses to a target cathode within an ionization chamber to both sustain a plasma in the gas...
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5601652 |
Apparatus for applying ceramic coatings
An apparatus for applying ceramic coatings using an electron beam-physical vapor deposition apparatus is described. The apparatus includes means for introducing the anionic constitutent of the...
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5601653 |
Apparatus for performing plasma process on semiconductor wafers and the like and method of performing plasma process
A plasma processing apparatus for performing plasma process on a semiconductor or the like draws an electron beam from an electron source plasma and, after acceleration, introduces the electron...
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5545257 |
Magnetic filter apparatus and method for generating cold plasma in semicoductor processing
Disclosed herein is a system and method for providing a plasma flood having a low electron temperature to a semiconductor target region during an ion implantation process. The plasma generator...
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5534314 |
Directed vapor deposition of electron beam evaporant
A process for vapor depositing an evaporant onto a substrate is provided which involves: presenting the substrate to a deposition chamber, wherein the deposition chamber has an operating pressure...
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5487787 |
Apparatus and method for plasma deposition
The substrate in a plasma jet deposition system is provided with structural attributes, such as apertures and/or grooves, that facilitate efficient deposition. Groups of substrates are arranged...
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5413663 |
Plasma processing apparatus
A wafer plasma-etching apparatus includes electron generating, accelerating and processing chambers. Electron are drawn out of plasma generated in the electron generating chamber, accelerated in...
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5368676 |
Plasma processing apparatus comprising electron supply chamber and high frequency electric field generation means
A plasma etching apparatus provided with a processing chamber adjustable to be highly decompressed. A pair of parallel electrodes are arranged in the processing chamber and semiconductor wafers are...
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5342448 |
Apparatus for processing a sample using a charged beam and reactive gases
A method of processing a sample using a charged beam and reactive gases and a system employing the same, the method and system being able to perform the reactive etching and the beam assisted...
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4941430 |
Apparatus for forming reactive deposition film
An apparatus for forming a reactive deposition film includes a member for supporting a body to be coated in a vacuum chamber; an evaporation source of element constituting the reactive deposition...
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4785189 |
Method and apparatus for low-energy scanning electron beam lithography
An electron sensitive surface is patternized treated to a high resolution pattern of low-energy electrons without any need to do focussing by emitting the low-energy electrons from a pointed...
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4782267 |
In-situ wide area vacuum ultraviolet lamp
An open wide area vacuum ultraviolet lamp for use in microelectronics processing applications employes a ring-shaped cold cathode to produce a trapped electron beam discharge of generally...
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4740263 |
Process for preparing thin film and p-type diamond semiconductor
A process for preparing a diamond thin film by an electron assisted chemical vapor deposition (EACVD) is disclosed, in which diamond crystal nuclei are caused to form and grow to a thin film on a...
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4615904 |
Maskless growth of patterned films
A method of growing patterned films on a substrate in a deposition chamber without masking, the method consisting of the following steps: pressurizing the chamber with a fluid medium to form a thin...
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4605566 |
Method for forming thin films by absorption
A film of an element is deposited on a semiconductor substrate by passing on the substrate gas containing the element and then irradiating a predetermined portion of the substrate with an electron...
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4550257 |
Narrow line width pattern fabrication
The formation of lines of the order of 8 Angstroms wide is achieved using a tunneling current through a gas that changes to provide a residue that is the basis of the line. The tunneling current...
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4522674 |
Surface treatment apparatus
A gas is introduced into a surface treatment chamber and is activated therein. The surface of a specimen placed in the surface treatment chamber is treated by using reactive species generated by...
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4509451 |
Electron beam induced chemical vapor deposition
Applicants have invented a new low temperature method (50° C. to 500° C.) to deposit and grow microelectronic thin films using cold cathode electron beams to initiate and sustain both gas phase...
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4343829 |
Method of fabricating single-crystalline silicon films
Herein disclosed is a method of fabricating a thick single-crystalline silicon film at a low temperature less than 1000° C. The method is characterized in that, simultaneously as silicon...
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4042006 |
Pyrolytic process for producing a band-shaped metal layer on a substrate
A band-shaped metal layer useful as a resistance layer and/or a contact layer is pyrolytically deposited onto a cylindrical substrate by surrounding the surface of the substrate with a mixture of a...
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3516855 |
METHOD OF DEPOSITING CONDUCTIVE IONS BY UTILIZING ELECTRON BEAM
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3458368 |
INTEGRATED CIRCUITS AND FABRICATION THEREOF
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