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7604708 Cleaning of native oxide with hydrogen-containing radicals  
A substrate cleaning apparatus has a remote source to remotely energize a hydrogen-containing gas to form an energized gas having a first ratio of ionic hydrogen-containing species to radical...
7603963 Controlled zone microwave plasma system  
An apparatus and method for initiating a process gas plasma. A conductive plate having a plurality of conductive fingers is positioned in a microwave applicator. An arc forms between the conductive...
7582185 Plasma-processing apparatus  
A plasma-processing apparatus having a high frequency power application electrode in which plasma is generated by supplying VHF power to the high frequency power application electrode. The...
7581511 Apparatus and methods for manufacturing microfeatures on workpieces using plasma vapor processes  
A reactor comprising an energy source, a plasma unit positioned relative to the energy source, and a processing vessel connected to the plasma unit. The energy source has a generator that produces...
7520957 Lid assembly for front end of line fabrication  
A lid assembly for semiconductor processing is provided. In at least one embodiment, the lid assembly includes a first electrode comprising an expanding section that has a gradually increasing...
7462335 Optical monitoring and control system and method for plasma reactors  
A method of adjusting plasma processing of a substrate in a plasma reactor having an electrode assembly. The method includes the steps of positioning the substrate in the plasma reactor, creating a...
7444955 Apparatus for directing plasma flow to coat internal passageways  
An apparatus for coating surfaces of a workpiece is configured to establish a pressure gradient within internal passageways through the workpiece, so that the coating within the internal...
7442272 Apparatus for manufacturing semiconductor device  
An apparatus for improving the density and uniformity of plasma in the manufacture of a semiconductor device features a plasma chamber having a complex geometry that causes plasma density to be...
7431767 Apparatus and method for growth of a thin film  
An improved apparatus and method for substrate layer deposition in which substrate layers are grown by carrier gas delivery of sequential pulses of reactants to the substrate surface. At least one...
7300558 Rapid cycle time gas burster  
An apparatus for rapidly establishing at least one preselected gas pressure in a process chamber comprising: (a) a chamber defining an interior space adapted to be maintained at a reduced...
7183564 Channel spark source for generating a stable focused electron beam  
In a channel spark source triggered by gas discharge for generating a stable focused electron beam, a gas supply for a hollow cathode thereof is provided which generates in the hollow cathode a...
7104217 Plasma processing apparatus  
The present invention provides a plasma processing apparatus having an electrode plate arranging therein, an upper electrode to which a dielectric member or a cavity portion is provided, a...
7097712 Apparatus for processing a semiconductor  
A multi-chamber system for providing a process of a high degree of cleanliness in fabricating semiconductor devices such as semiconductor integrated circuits. The system comprises a plurality of...
7037376 Backflush chamber clean  
A processing chamber may be effectively cleaned by a remote plasma flowed through the chamber in a direction opposite to the direction of gas flowed during wafer processing. Specifically, the...
6998014 Apparatus and method for plasma assisted deposition  
Embodiments of the present invention relate to an apparatus and method of plasma assisted deposition by generation of a plasma adjacent a processing region. One embodiment of the apparatus...
6946053 Plasma reactor  
This invention is a hardware modification which permits greater uniformity of etching to be achieved in a high-density-source plasma reactor (i.e., one which uses a remote source to generate a...
6939434 Externally excited torroidal plasma source with magnetic control of ion distribution  
A plasma reactor is described that includes a vacuum chamber defined by an enclosure including a side wall and a workpiece support pedestal within the chamber defining a processing region overlying...
6929712 Plasma processing apparatus capable of evaluating process performance  
A high-frequency current detector of a plasma processing apparatus detects a high-frequency current produced when high-frequency power in the range that does not cause generation of plasma in a...
6919107 Method and device for treating surfaces using a glow discharge plasma  
In a process for treating a surface with the aid of a glow discharge plasma sustained in a gas of substantially ambient pressure between two electrodes ( 10, 10 ′) unwanted effects of plasma...
6863021 Method and apparatus for providing and integrating a general metal delivery source (GMDS) with atomic layer deposition (ALD)  
A General Metal Delivery Source (GMDS) for delivery of volatile metal compounds in gaseous form to processing apparatus has a reaction chamber holding a solid metal source material and connecting...
6830007 Apparatus and method for forming low dielectric constant film  
A CVD apparatus includes (i) a reaction chamber; (ii) a reaction gas inlet; (iii) a lower stage on which a semiconductor substrate is placed; (iv) an upper electrode for plasma excitation; (v) an...
6830786 Silicon oxide film, method of forming the silicon oxide film, and apparatus for depositing the silicon oxide film  
A silicon oxide film has a ratio of A 1 to A 2 which is not higher than 0.21, where A 1 is a first peak integrated intensity of a first peak belonging to Si—OH and appearing in the vicinity of...
6800336 Method and device for plasma coating surfaces  
A method for coating surfaces, for which a precursor material is caused to react with the help of plasma and the reaction product is deposited on a surface, the reaction as well as the deposition...
6779483 Plasma CVD apparatus for large area CVD film  
A plasma CVD apparatus includes first and second electrodes, neutral gas introduction pipes, and a plasma confining electrode interposed between the first and second electrodes to separate a plasma...
6770165 Apparatus for plasma treatment  
An apparatus for plasma treatment comprises: an outer chamber for plasma generation, which is connected to a gas introduction portion for plasma generation; a coil for plasma generation, which is...
6764658 Plasma generator  
A plasma generator includes several plasma sources distributed in an array for plasma treatment of surfaces. Each plasma source includes first and second conductive electrodes. Each second...
6749717 Device for in-situ cleaning of an inductively-coupled plasma chambers  
The present invention is a process for plasma enhanced fabrication of conductive materials on a substrate comprising the steps of placing substrate in an inductively coupled (IC) plasma reaction...
6706141 Device to generate excited/ionized particles in a plasma  
A device to generate excited and/or ionized particles in plasma with a generator to generate an electromagnetic wave and at least one plasma zone, in which the excited and/or ionized particles are...
6692649 Inductively coupled plasma downstream strip module  
A plasma processing module for processing a substrate includes a plasma containment chamber having a feed gas inlet port capable of allowing a feed gas to enter the plasma containment chamber of...
6676802 Remote exposure of workpieces using a plasma  
An OAUGD plasma is generated using, for example, paraelectric or peristaltic electrohydrodynamic (EHD) techniques, in the plasma generator of a remote-exposure reactor, wherein one or more active...
6673392 Method of vertically aligning carbon nanotubes on substrates at low pressure using thermal chemical vapor deposition with DC bias  
A method of vertically aligning pure carbon nanotubes on a large glass or silicon substrate at a low temperature using a low pressure DC thermal chemical vapor deposition method is provided. In...
6656540 Method for forming metallic film and apparatus for forming the same  
The present invention provides methods and apparatus for the formation of a thin noble metal film which can achieve a high rate of film growth, can use inexpensive raw materials, and do not allow...
6656282 Atomic layer deposition apparatus and process using remote plasma  
Disclosed are an apparatus for and a process of atomic layer deposition using remote plasma. A thin film is deposited to a desired thickness on a wafer by use of the apparatus, which comprises a...
6652763 Method and apparatus for large-scale diamond polishing  
A method and apparatus for the polishing of diamond surfaces, wherein the diamond surface is subjected to plasma-enhanced chemical etching using an atomic oxygen polishing plasma source, are...
6651582 Method and device for irradiating an ion beam, and related method and device thereof  
When ion beam 14 is irradiated onto a substrate 2 to conduct processing such as ion injection, plasma 30 emitted from a plasma generating device 20 is supplied to a portion close to the...
6641698 Integrated circuit fabrication dual plasma process with separate introduction of different gases into gas flow  
A dual plasma process generates a microwave neutral plasma remote from a semiconductor wafer and a radio frequency (RF) ionized plasma adjacent to the wafer for simultaneous application to the...
6623802 Process and installation for forming a layer on a substrate  
A method and installation for forming a coating on a substrate, wherein the substrate is contacted with a gas treatment atmosphere in order to carry out said coating. The gas treatment atmosphere...
6602772 Method for non-contact stress evaluation of wafer gate dielectric reliability  
An apparatus and method for evaluating the performance of a test dielectric material for use as a gate dielectric. The method comprises exposing a coated layer of the dielectric to a concentration...
6545420 Plasma reactor using inductive RF coupling, and processes  
A domed plasma reactor chamber uses an antenna driven by RF energy (LF, MF, or VHF) which is inductively coupled inside the reactor dome. The antenna generates a high density, low energy plasma...
6539891 Chemical deposition reactor and method of forming a thin film using the same  
A chemical deposition reactor capable of switching rapidly from one process gas to another and method of forming a thin film using the same. The reactor of the present invention comprises: a...
6495233 Apparatus for distributing gases in a chemical vapor deposition system  
A lid assembly for a semiconductor processing apparatus having at least two chambers comprises a lid plate having a first side and a second side and a plasma generation source mounted to the first...
6495010 Differentially-pumped material processing system  
A differentially pumped deposition system is described that includes a deposition source, such as a magnetron sputtering source, that is positioned in a first chamber. The deposition source...
6490994 Plasma processing apparatus  
A plasma processing apparatus that allows processing of high quality under a wider processing condition is provided by optimizing the distance between a plasma region and a substrate even in the...
6450117 Directing a flow of gas in a substrate processing chamber  
A substrate processing chamber 30 comprising a first gas distributor 65 adapted to provide a process gas into the chamber 30 to process the substrate 25 , a second gas distributor 215 ...
6446572 Embedded plasma source for plasma density improvement  
An apparatus and method for regulating the plasma characteristics in a plasma processing system that includes a plasma generating assembly that generates a primarily inductively-coupled plasma from...
6419752 Structuring device for processing a substrate  
A structuring device (SD) for processing a surface of a substrate (SB), comprising a substrate chamber (VC) for mounting the substrate (SB) and a reaction chamber (GC) enabling a gas reaction at a...
6415736 Gas distribution apparatus for semiconductor processing  
A gas distribution system for semiconductor processing includes a contoured surface to achieve a desired gas distribution on the backside of a showerhead. The system can include one or more gas...
6412438 Downstream sapphire elbow joint for remote plasma generator  
A remote plasma generator, coupling microwave frequency energy to a gas and delivering radicals to a downstream process chamber, includes several features which, in conjunction, enable highly...
6367412 Porous ceramic liner for a plasma source  
A plasma tube comprising a vacuum sealing ceramic outer tube, a porous ceramic insert disposed on the inside wall of the outer tube, and a source of high frequency radiation, for example, an RF...
6352050 Remote plasma mixer  
A remote plasma generator, coupling microwave frequency energy to a gas and delivering radicals to a downstream process chamber, includes several features which, in conjunction, enable highly...
Matches 1 - 50 out of 166 1 2 3 4 >