Match Document Document Title
9038566 Capacitive coupling plasma processing apparatus  
A capacitive coupling plasma processing apparatus includes a process chamber configured to have a vacuum atmosphere, and a process gas supply section configured to supply a process gas into the...
9039864 Off-center ground return for RF-powered showerhead  
An electrical ground (36) of an RF impedance matching network (33) is connected to a connection area (50) on the grounded chamber cover (18) of a plasma chamber. The connection area is offset away...
9038567 Plasma processing apparatus  
The object of the invention is to provide a plasma processing apparatus having enhanced plasma processing uniformity. The plasma processing apparatus comprises a processing chamber 1, means 13 and...
9032905 Apparatus and method for coating glass substrate  
An apparatus and method for coating a substrate using one or more liquid raw materials, includes: at least one atomizer for atomizing the one or more liquid raw materials into droplets, charging...
9021984 Plasma processing apparatus and semiconductor device manufacturing method  
A plasma processing apparatus includes a processing chamber; a lower electrode provided in the processing chamber and having a base made of a conductive metal to which a high frequency power is...
8999062 Film depositing apparatus  
A film depositing apparatus comprises: a rotatable drum within a chamber around which a substrate is wrapped in a specified surface region; a film depositing unit comprising a film depositing...
8992722 Direct drive arrangement to control confinement rings positioning and methods thereof  
A direct drive arrangement for controlling pressure volume within a confinement region of a processing chamber of a plasma processing system during substrate processing is provided. The...
8991331 Integrated steerability array arrangement for minimizing non-uniformity and methods thereof  
A method for providing steerability in a plasma processing environment during substrate processing is provided. The method includes managing, power distribution by controlling power being...
8992723 RF bus and RF return bus for plasma chamber electrode  
For coupling RF power from an RF input of a plasma chamber to the interior of a plasma chamber, an RF bus conductor is connected between the RF input and a plasma chamber electrode. In one...
8986495 Plasma processing apparatus  
A plasma processing apparatus includes an upper electrode that is installed within a processing chamber so as to face a lower electrode, supplies a gas through a plurality of gas supply holes...
8986564 Apparatus and methods for handling workpieces in a processing system  
Apparatus and methods for handling workpieces in a processing system. The workpiece vertical lift mechanism (200), which is disposed inside a process chamber (40) of the processing system, is...
8980044 Plasma reactor with a multiple zone thermal control feed forward control apparatus  
A plasma reactor having a reactor chamber and an electrostatic chuck having a surface for holding a workpiece inside the chamber includes inner and outer zone backside gas pressure sources coupled...
8980007 Thin film forming apparatus and thin film forming method  
Disclosed is a thin film forming apparatus which is a plasma discharge processing apparatus for performing a plasma discharge processing on the surface of a continuously transported base at or...
8973526 Plasma deposition apparatus and method  
A plasma deposition apparatus includes a cathode assembly including a cathode disk and a water-coolable cathode holder supporting the cathode disk, an anode assembly including a water-coolable...
8968838 Plasma processing in a capacitively-coupled reactor with trapezoidal-waveform excitation  
A method is provided for exciting at least one electrode of a capacitively coupled reactive plasma reactor containing a substrate. The electrode is excited by applying a RF voltage with a...
8967081 Device and process for chemical vapor phase treatment  
Device for treating substrates, comprising a changer having controlled pressure and temperature, a substrate support which is provided in the chamber, the chamber comprising a gas inlet for...
8968514 Gas distributing device and substrate processing apparatus including the same  
A gas distribution device for a substrate treating apparatus includes a plurality of plasma source electrodes having a first side surface; a plurality of plasma ground electrodes having a second...
8968513 Plasma processing apparatus  
An intensity distribution of an electric field of a high frequency power used for generating plasma is controlled by using an electrode made of a homogeneous material and a moving body. There is...
8950356 Barrier-film forming apparatus, barrier-film forming method, and barrier-film coated container  
A barrier-film forming apparatus that forms a barrier film on an inner face of a container having a concave or convex portion as a processing target, including: a dielectric member having a cavity...
8944003 Remote plasma system and method  
A system and method for generating and using plasma is provided. An embodiment comprises a plasma generating unit that comprises beta-phase aluminum oxide. A precursor material is introduced to...
8940140 Thin film application device and method for coating small aperture vacuum vessels  
A device and method for coating an inside surface of a vessel is provided. In one embodiment, a coating device comprises a power supply and a diode in electrical communication with the power...
8936696 Method and apparatus for shaping a magnetic field in a magnetic field-enhanced plasma reactor  
A magnetic field generator which provides greater control over the magnetic field is provided. The magnetic field generator has a plurality of overlapping main magnetic coil sections for forming a...
8932429 Electronic knob for tuning radial etch non-uniformity at VHF frequencies  
System and methods for plasma processing of a wafer include a chamber with an electrode having a support surface and an outer edge region defined thereon. A radio frequency power is communicated...
8931432 Vacuum processing apparatus  
A vacuum processing apparatus is provided, in which a deposition characteristic is easily adjusted, and occurrence of difference in deposition characteristic between deposition chambers can be...
8926789 Apparatus for the removal of a fluorinated polymer from a substrate  
An apparatus generating a plasma for removing fluorinated polymer from a substrate is provided. The apparatus includes a powered electrode assembly, which includes a powered electrode, a first...
8920613 Offset magnet compensation for non-uniform plasma  
A non-axisymmetric electromagnet coil used in plasma processing in which at least one electromagnet coil is not symmetric with the central axis of the plasma processing chamber with which it is...
8920597 Symmetric VHF source for a plasma reactor  
The disclosure pertains to a capactively coupled plasma source in which VHF power is applied through an impedance-matching coaxial resonator having a folded structure and symmetrical power...
8920598 Electrode and plasma processing apparatus  
There is provided a plasma processing apparatus including a processing chamber 100 configured to perform a plasma process on a wafer W; an upper electrode 105 and a lower electrode 110 arranged to...
8920611 Method for controlling radial distribution of plasma ion density and ion energy at a workpiece surface by multi-frequency RF impedance tuning  
The method of performing physical vapor deposition on a workpiece includes performing at least one of the following: (a) increasing ion density over a workpiece center while decreasing ion density...
8915999 Shower plate sintered integrally with gas release hole member and method for manufacturing the same  
A shower plate is disposed in a processing chamber in a plasma processing apparatus, and plasma excitation gas is released into the processing chamber so as to generate plasma. A ceramic member...
8910591 Apparatus and methods for capacitively coupled plasma vapor processing of semiconductor wafers  
A capacitively coupled plasma reactor comprising a processing chamber, a first electrode, a second electrode and a thermoelectric unit. The processing chamber has an upper portion with a gas inlet...
8911590 Integrated capacitive and inductive power sources for a plasma etching chamber  
Broadly speaking, the embodiments of the present invention provide an improved chamber cleaning mechanism. The present invention can also be used to provide additional knobs to tune the etch...
8911637 Plasma-enhanced substrate processing method and apparatus  
A method for processing a substrate in a capacitively-coupled plasma processing system having a plasma processing chamber and at least an upper electrode and a lower electrode. The substrate is...
8911588 Methods and apparatus for selectively modifying RF current paths in a plasma processing system  
Methods and apparatus for modifying RF current path lengths are disclosed. Apparatus includes a plasma processing system having an RF power supply and a lower electrode having a conductive...
8904956 Plasma stamp, plasma treatment device, method for plasma treatment and method for producing a plasma stamp  
The invention relates to a plasma stamp, with which surfaces can be subjected to a plasma treatment. In addition, the invention relates to a plasma treatment device, with which surfaces can be...
8904957 Plasma processor and plasma processing method  
An etching chamber 1 incorporates a focus ring 9 so as to surround a semiconductor wafer W provided on a lower electrode 4. The plasma processor is provided with an electric potential control DC...
8888950 Apparatus for plasma processing and method for plasma processing  
There is provided a substrate supporter capable of securely supporting a substrate such as a wafer on which a device having a predetermined thin film pattern is formed to remove various impurities...
8888951 Plasma processing apparatus and electrode for same  
A plasma processing apparatus includes a processing chamber that plasma processes a target object therein, first and second electrodes that are provided in the processing chamber to face each...
8883027 Methods for removing a metal oxide from a substrate  
A method for generating plasma for removing metal oxide from a substrate is provided. The method includes providing a powered electrode assembly, which includes a powered electrode, a dielectric...
8875657 Balancing RF bridge assembly  
Embodiments disclosed herein generally relate to a PECVD apparatus. When the RF power source is coupled to the electrode at multiple locations, the current and voltage may be different at the...
8877301 Plasma processing including asymmetrically grounding a susceptor  
An asymmetrically grounded susceptor used in a plasma processing chamber for chemical vapor deposition onto large rectangular panels supported on and grounded by the susceptor. A plurality of...
8877005 Plasma processing apparatus and electrode used therein  
A plasma processing apparatus includes a depressurizable processing chamber; an electrode provided in the processing chamber; and a high frequency power supply for supplying a high frequency power...
8869742 Plasma processing chamber with dual axial gas injection and exhaust  
An electrode is exposed to a plasma generation volume and is defined to transmit radiofrequency power to the plasma generation volume, and includes an upper surface for holding a substrate in...
8869741 Methods and apparatus for dual confinement and ultra-high pressure in an adjustable gap plasma chamber  
A plasma processing system having a plasma processing chamber configured for processing a substrate is provided. The plasma processing system includes at least an upper electrode and a lower...
8864936 Apparatus and method for processing substrate  
There are provided an apparatus and method for processing a substrate. By using the apparatus and method, plasma processing can be individually performed on each of edge and rear regions of a...
8858753 Focus ring heating method, plasma etching apparatus, and plasma etching method  
There are provided a method of heating a focus ring and a plasma etching apparatus, capable of simplifying a structure of a heating mechanism without a dummy substrate. The plasma etching...
8857371 Apparatus for generating dielectric barrier discharge gas  
An apparatus for generating a dielectric-barrier discharge gas including a high-energy radical gas, at a high density and with high efficiency. A flat-plate-like first electrode and a...
8858754 Plasma processing apparatus  
There is provided a plasma processing apparatus capable of easily exhausting a processing gas introduced in a space above a vertically movable upper electrode. The plasma processing apparatus...
8858712 Electrode for use in plasma processing apparatus and plasma processing apparatus  
An electrode for use in a plasma processing apparatus is provided above a lower electrode within a processing chamber so as to face the lower electrode serving as a mounting table configured to...
8852387 Plasma processing apparatus and shower head  
There is provided a plasma processing apparatus including: a shower head installed within a processing chamber for processing a substrate and facing a mounting table for mounting the substrate; a...