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Match Document Document Title
7416635 Gas supply member and plasma processing apparatus  
A gas supply member is disposed in a chamber of a plasma processing apparatus and has a planar surface facing an inner space of the chamber and a plurality of gas holes bored in the planar surface...
7413627 Deposition chamber and method for depositing low dielectric constant films  
An improved deposition chamber ( 2 ) includes a housing ( 4 ) defining a chamber ( 18 ) which houses a substrate support ( 14 ). A mixture of oxygen and SiF 4 is delivered through a set of first...
7413611 Gas reaction system and semiconductor processing apparatus  
A gas reaction system is disclosed which comprises a vaporizer ( 230 ) for generating a reaction gas by vaporizing a liquid material and a reaction chamber ( 221 A) wherein the reaction gas is...
7413610 Method and apparatus for coating or heat treatment of blisks for aircraft gas turbines  
A method for hard-material coating or heat treatment of the blade airfoils of blisks for gas turbines provides for partial heat-insulation and cooling of the other blisk parts during the respective...
7410668 Methods, systems, and apparatus for uniform chemical-vapor depositions  
Integrated circuits, the key components in thousands of electronic and computer products, are generally built layer by layer on a silicon substrate. One common technique for forming layers is...
7404879 Ionized physical vapor deposition apparatus using helical self-resonant coil  
Provided is an ionized physical vapor deposition (IPVD) apparatus having a helical self-resonant coil. The IPVD apparatus comprises a process chamber having a substrate holder that supports a...
7402210 Apparatus and method for hybrid chemical processing  
In one embodiment, an apparatus for performing an atomic layer deposition process is provided which includes a chamber body having a substrate support, a lid assembly attached to the chamber body,...
7402207 Method and apparatus for controlling the thickness of a selective epitaxial growth layer  
Methods and systems for permitting thickness control of the selective epitaxial growth (SEG) layer in a semiconductor manufacturing process, for example raised source/drain applications in CMOS...
7399364 Hermetic cap layers formed on low-κ films by plasma enhanced chemical vapor deposition  
A method of forming a cap layer over a dielecrtic layer on a substrate including forming a plasma from a process gas including oxygen and tetraethoxysilane, and depositing the cap layer on the...
7396431 Plasma processing system for treating a substrate  
A plasma processing system for treating a substrate includes a processing chamber including a first chamber portion configured to receive a first gas for providing a plasma space, and a second...
7396415 Apparatus and methods for isolating chemical vapor reactions at a substrate surface  
An apparatus and method for processing a substrate is provided. The apparatus comprises a reaction chamber, a substrate holder within the chamber, and first and second injector components. The...
7396411 Apparatus for manufacturing single crystal  
A method for manufacturing a single crystal includes the steps of: flowing a raw material gas toward a seed crystal in a reactive chamber so that the single crystal grows from the seed crystal;...
7393418 Susceptor  
A susceptor at least a surface thereof being coated with SiC, includes a recess where an wafer is mounted, the recess having an round portion disposed on a lower portion of an outer circumferential...
7390367 Housing assembly for an induction heating device including liner or susceptor coating  
A housing assembly for an induction heating device defines a processing chamber and includes a susceptor and a thermally conductive liner. The susceptor surrounds at least a portion of the...
7390366 Apparatus for chemical vapor deposition  
An apparatus for CVD is disclosed. Processing gas is injected to an upper center portion of a wafer supporting member by a gas focus ring installed at an inner side surface of a reaction chamber....
7389580 Method and apparatus for thin-film battery having ultra-thin electrolyte  
A method and system for fabricating solid-state energy-storage devices including fabrication films for devices without an anneal step. A film of an energy-storage device is fabricated by depositing...
7388211 Semi-closed observational environment for electron microscope  
A semi-closed observational environment for an electron microscope includes a housing having at least two spacers for partitioning itself into a receiving chamber, a gas chamber below the receiving...
7387686 Film formation apparatus  
A metal atomic layer and an oxygen atomic layer are formed in this order by ALD, followed by rapid heating through RTA (Rapid Thermal Annealing). This cycle of steps is repeated to form a high...
7387685 Apparatus and method for depositing materials onto microelectronic workpieces  
Reactors for vapor deposition of materials onto a microelectronic workpiece, systems that include such reactors, and methods for depositing materials onto microelectronic workpieces. In one...
7384876 Method and apparatus for determining consumable lifetime  
A plasma processing device comprising a gas injection system is described, wherein the gas injection system comprises a gas injection assembly body, a consumable gas inject plate coupled to the gas...
7381274 Gas valve assembly and apparatus using the same  
A gas valve assembly for a deposition apparatus includes: a driving shaft including a plurality of gas supply paths therein; a housing surrounding the driving shaft and including a plurality of...
7380564 System and method for a mass flow controller  
A system and method for controlling a mass flow controller to have a constant control loop gain under a variety of different types of fluids and operating conditions, and for configuring the mass...
7374941 Active reactant vapor pulse monitoring in a chemical reactor  
A method and apparatus for determining changes in a supply system, designed to supply repeated pulses of a vapor phase reactant to a reaction chamber is disclosed. One embodiment involves providing...
7374620 Substrate processing apparatus  
A substrate processing apparatus ( 10 A) using a microwave plasma is disclosed wherein an inner partition wall ( 15 ) is provided within a process chamber ( 11 ) so that the inside of the process...
7371467 Process chamber component having electroplated yttrium containing coating  
A component capable of being exposed to a plasma in a process chamber has a structure having an electroplated coating comprising yttrium-containing species. The electroplated coating is resistant...
7371285 Motorized chamber lid  
A semiconductor processing chamber having a motorized lid is provided. In one embodiment, the semiconductor processing chamber generally includes a chamber body having sidewalls and a bottom...
7365342 Device for operating gas in vacuum or low-pressure environment and for observation of the operation  
A device for operating gas in the vacuum or low-pressure environment and for observation of the operation includes a housing. The housing has a thinner part formed at a side thereof, and at least...
7364623 Confinement ring drive  
A confinement assembly for a semiconductor processing chamber is provided. The confinement assembly includes a plurality of confinement rings disposed over each other. Each of the plurality of...
7361229 Device for deposition with chamber cleaner and method for cleaning chamber  
A chamber cleaner includes a cleaner, which is sealed, a connector passing through a side of the cleaner, lamp assembly connected to the connector and uniformly arranged in an inside surface of the...
7361228 Showerheads for providing a gas to a substrate and apparatus  
Showerheads including a plate having a plurality of gas outlet holes extending therethrough and a head cover coupled to the plate to form a space between the plate and the head cover. A gas supply...
7360551 Method and apparatus for providing a determined ratio of process fluids  
A fluid flow control system that includes a fluid inlet to receive a flow of process fluid and a plurality of fluid outlets. The plurality of fluid outlets include a first fluid outlet and at least...
7353841 Relative pressure control system and relative flow control system  
Provided is a relative pressure control system has a simple configuration, but enables accurate regulation of a division ratio of an operation gas, and concurrently makes it possible to securely...
7353771 Method and apparatus of providing power to ignite and sustain a plasma in a reactive gas generator  
According to a first aspect, a power supply and a method of providing power for igniting a plasma in a reactive gas generator is provided that includes (i) coupling a series resonant circuit that...
7351293 Method and device for rotating a wafer  
Method and device for rotating a wafer which is arranged floating in a reactor. The wafer is treated in a reactor of this nature, and it is important for this treatment to be carried out as...
7350476 Method and apparatus to determine consumable part condition  
A system for monitoring a condition of a consumable component in a substrate processing system that includes a tapered plug having a first axis, a second axis that intersects the first axis, a top...
7347900 Chemical vapor deposition apparatus and method  
A chemical vapor deposition (CVD) apparatus includes a process chamber where a deposition process is performed on a wafer. A gas supply assembly is mounted in the process chamber for supplying a...
7343698 Reduced pressure drying apparatus and reduced pressure drying method  
A reduced pressure drying apparatus comprises a substrate stage section for disposing thereon a substrate having the surface coated with a coating liquid containing a film-forming component and a...
7338578 Step edge insert ring for etch chamber  
An insert ring for a wafer support inside a processing chamber for the processing, particularly dry etching, of semiconductor wafer substrates. The insert ring has a generally step-shaped...
7332040 Semiconductor manufacturing system having a vaporizer which efficiently vaporizes a liquid material  
A vaporizer can efficiently vaporize a liquid material under a depressurized atmosphere. The liquid material is temporarily stored in a liquid storing chamber, and is supplied to a vaporizing...
7332039 Plasma processing apparatus and method thereof  
A nozzle head NH of a plasma processing apparatus comprises an annular inner holder 3 , an annular inner electrode 11 surrounding this holder 3 , an annular outer electrode 21 surrounding...
7332038 Device for depositing in particular crystalline layers on one or more, in particular likewise crystalline substrates  
A device for depositing crystalline layers onto one or more substrates in a process chamber, including: a reverse-heatable support plate which forms a wall of the process chamber and which is...
7331307 Thermally sprayed member, electrode and plasma processing apparatus using the electrode  
A thermally sprayed member or an electrode includes a basic material, a thermally sprayed film formed on the surface of the basic material, the thermally sprayed film being made of an insulating...
7329292 Process byproduct trap and system including same  
A trap device including at least one substance delivery element for introducing a substance therein is disclosed. The delivered substance may influence the nature of deposits that have formed...
7323212 Method and system of controlling dummy dispense  
A dummy dispense of liquid is controlled by recording a time at which a substrate is processed; recording a time at which a liquid is dispensed; comparing the time at which the substrate is...
7323207 Method and apparatus for fingerprint detection  
A portable apparatus for detecting latent fingerprints that discharges a vapor of a cyanoacrylate-containing solution. The apparatus comprises a reservoir for holding a liquid solution comprising...
7318869 Variable gas conductance control for a process chamber  
A deposition system in accordance with one embodiment of the present invention includes a process chamber, a stationary pedestal for supporting a substrate in the process chamber, and a moveable...
7316761 Apparatus for uniformly etching a dielectric layer  
Apparatus for plasma etching a layer of material upon a substrate comprising an anode having a first region protruding from a second region, wherein the second region defines a plane and the first...
7314527 Reactor system  
A gas delivery system for delivering a gas to a reactor. The reactor has a reactor chamber, a gas inlet port, and a gas exhaust port. The gas delivery system included a torch chamber having an...
7314526 Reaction chamber for an epitaxial reactor  
Reaction chamer ( 10 ) for an epitaxial reactor comprising a belljar ( 14 ) made of insulating, transparent and chemically resistant material, a susceptor ( 24 ) provided with disk-shaped cavities...
7314525 Plasma CVD apparatus  
A plasma CVD apparatus comprises a reaction container for allowing a reaction for forming a thin film on a semiconductor wafer to be performed, a bias electrode which applies a high frequency bias...
Matches 1 - 50 out of 2163 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 >