|
Match
|
Document |
Document Title |
|
|
7163585 |
Method and apparatus for an improved optical window deposition shield in a plasma processing system
The present invention presents an improved optical window deposition shield for optical access to a process space in a plasma processing system through a deposition shield, wherein the design and...
|
|
|
7163608 |
Apparatus for synthesis of layers, coatings or films
Systems and methods are described for the synthesis of films, coatings or layers. An apparatus includes a first holder; a second holder coupled to the first holder; a linkage coupled to the first...
|
|
|
7159537 |
Device for fixing a gas showerhead or target plate to an electrode in plasma processing systems
A plasma processing system includes a reactor, a top electrode made of a magnetic or ferromagnetic metal or a metal-alloy, wherein a RF or DC power is applied to generate plasma within the reactor;...
|
|
|
7156921 |
Method and apparatus for chemical vapor deposition capable of preventing contamination and enhancing film growth rate
Disclosed relates to a method for CVD comprises steps of injecting a purge gas, which doesn't either dissolve or generate byproducts by itself, into a reaction chamber where substrates are located;...
|
|
|
7156922 |
Multi-chamber installation for treating objects under vacuum, method for evacuating said installation and evacuation system therefor
A multi-chamber installation ( 1 ) treats objects under vacuum. An evacuation system ( 5 ) is connected to a plurality of chambers ( 2, 3, 4 ). To reduce the complexity of the evacuation process, a...
|
|
|
7156923 |
Silicon nitride film forming method, silicon nitride film forming system and silicon nitride film forming system precleaning method
A thermal processing system ( 1 ) includes a reaction vessel ( 2 ) capable of forming a silicon nitride film on semiconductor wafers ( 10 ) through interaction between hexachlorodisilane and...
|
|
|
7153368 |
Susceptor with epitaxial growth control devices and epitaxial reactor using the same
A susceptor ( 1 ) for epitaxial growth reactors comprises a body ( 2 ) having a lower base ( 3 ), an upper top ( 4 ) and some substantially flat side faces ( 5 ); the side faces are adapted to...
|
|
|
7147718 |
Device and method for the deposition of, in particular, crystalline layers on, in particular, crystalline substrates
The invention relates to a device and method for the deposition of in particular, crystalline layers on one or several, in particular, equally crystalline substrates in a process chamber, by means...
|
|
|
7149598 |
Process-oriented modulized plant for TFT-LCD fabrication
A process-oriented modulized plant for TFT-LCD fabrication capable of preventing cross contaminations is proposed. A plant includes a plurality of independent fabs and warehouses connected between...
|
|
|
7147719 |
Double slit-valve doors for plasma processing
In a substrate vacuum processing chamber, a second inner slit passage door apparatus and method to supplement the normal slit valve and its door at the outside of the chamber. The inner slit...
|
|
|
7143774 |
Method and apparatus for providing a determined ratio of process fluids
A fluid flow control system that includes a fluid inlet to receive a flow of process fluid and a plurality of fluid outlets. The plurality of fluid outlets include a first fluid outlet and at least...
|
|
|
7140384 |
Substrate processing equipment having mass flow controller
A mass flow controller includes a base having a first passage, an inlet portion for introducing fluid into the first passage, an outlet portion for releasing the fluid from the first passage, and a...
|
|
|
7141138 |
Gas delivery system for semiconductor processing
The present invention is directed to improving defect performance in semiconductor processing systems. In specific embodiments, an apparatus for processing semiconductor substrates comprises a...
|
|
|
7141095 |
Precursor material delivery system for atomic layer deposition
A precursor delivery system includes a flow path from a precursor container to a reaction space of a thin film deposition system, such as an atomic layer deposition (ALD) reactor. A staging volume...
|
|
|
7137405 |
Low pressure check valve
A check valve for preventing backflow of media including a valve movably coupled to a carrier body, the valve including a flexible membrane disposed therein such that the flexible membrane flexibly...
|
|
|
7139641 |
Wafer protection system
A system for protecting wafers from damage caused by an inaccurately-positioned wafer transfer robot blade during the transfer of wafers typically from a wafer cassette to a processing tool. The...
|
|
|
7135426 |
Erosion resistant process chamber components
A substrate processing chamber component demonstrates reduced erosion in an energized gas. The component has a ceramic structure composed of aluminum oxide with a surface exposed to the energized...
|
|
|
7128803 |
Integration of sensor based metrology into semiconductor processing tools
A system for processing a wafer is provided. The system includes a chemical mechanical planarization (CMP) tool. The CMP tool includes a wafer carrier defined within a housing. A carrier film is...
|
|
|
7128788 |
Manufacturing apparatus for buried insulating layer-type semiconductor silicon carbide substrate
A manufacturing method for a buried insulating layer-type semiconductor silicon carbide substrate comprises the step of placing an SOI substrate 100, which has a surface silicon layer 130 of a...
|
|
|
7114532 |
Liner for use in processing chamber
A container for use in a processing chamber to lessen the amount of contaminant particles found within the chamber after processing. The container fits closely within the chamber and includes ports...
|
|
|
7114669 |
Methods of operating a liquid vaporizer
The present invention is generally directed to a vaporizer with positive liquid shut-off. In one illustrative embodiment, the vaporizer is comprised of a body, a liquid inlet and a carrier gas...
|
|
|
7112544 |
Method of atomic layer deposition on plural semiconductor substrates simultaneously
The invention includes a method for treating a plurality of discrete semiconductor substrates. The discrete semiconductor substrates are placed within a reactor chamber. While the substrates are...
|
|
|
7109113 |
Solid source precursor delivery system
A solid source precursor material is delivered to a deposition chamber in vaporized form by utilizing a solid source precursor delivery system having either single or multiple stations(s) having a...
|
|
|
7108751 |
Method and apparatus for determining consumable lifetime
A plasma processing device comprising a gas injection system is described, wherein the gas injection system comprises a gas injection assembly body, a consumable gas inject plate coupled to the gas...
|
|
|
7108753 |
Staggered ribs on process chamber to reduce thermal effects
A semiconductor processing chamber having a plurality of ribs on an exterior surface of the chamber is provided. The ribs are positioned relative to the chamber such that shadows cast into the...
|
|
|
7104476 |
Multi-sectored flat board type showerhead used in CVD apparatus
Disclosed is a showerhead of a CVD apparatus comprising a plate having an empty inside and provided with a plurality of injection holes at one surface thereof; and gas supplying pipes installed at...
|
|
|
7105059 |
Reaction apparatus for atomic layer deposition
A reaction apparatus for atomic layer deposition includes a vacuum chamber having a gas inlet, a gas outlet, and a gas flow path for connecting the gas inlet and the gas outlet; a reactor located...
|
|
|
7105060 |
Method of forming an oxidation-resistant TiSiN film
A CVD process of forming a conductive film containing Ti, Si and N includes a first step of supplying gaseous sources of Ti, Si and N simultaneously to grow a conductive film and a second step of...
|
|
|
7105061 |
Method and apparatus for sealing substrate load port in a high pressure reactor
Methods and an apparatus for providing an intrinsically safe chamber door for a processing chamber capable of operating at high pressures are provided. One exemplary apparatus includes a processing...
|
|
|
7102872 |
Electrostatic chuck
An ESC (Electrostatic Chuck) to chuck an object by electrostatic force, having an ESC main body supporting the object; a guide ring supported by the ESC main body and encircling the object; a...
|
|
|
7097712 |
Apparatus for processing a semiconductor
A multi-chamber system for providing a process of a high degree of cleanliness in fabricating semiconductor devices such as semiconductor integrated circuits. The system comprises a plurality of...
|
|
|
7094312 |
Focused particle beam systems and methods using a tilt column
Particle beam systems and methods for interacting with a workpiece according to this invention include a work stage assembly and a first particle beam source. The work stage assembly is adapted a)...
|
|
|
7090727 |
Heated gas line body feedthrough for vapor and gas delivery systems and methods for employing same
A feedthrough device for use in deposition chambers such as chemical vapor deposition chambers and atomic layer deposition chambers and methods using the same in association with such chambers as...
|
|
|
7087119 |
Atomic layer deposition with point of use generated reactive gas species
An apparatus for atomic layer deposition preventing mixing of a precursor gas and an input gas. From the apparatus a flow of the input gas is provided over a surface of the workpiece wherein a beam...
|
|
|
7086410 |
Substrate processing apparatus and substrate processing method
A common solvent vapor supply source 41 and a common processing gas supply source 42 supply ozone gas and steam to a plurality of processing vessels 30 A, 30 B. Pressures in the processing...
|
|
|
7077912 |
Semiconductor manufacturing system
Provided is a semiconductor manufacturing system capable of loading a plurality of semiconductor wafers into a vertical reaction tube, and performing a thermal process. The semiconductor...
|
|
|
7077911 |
MOCVD apparatus and MOCVD method
The invention provides an MOCVD apparatus and a MOCVD method which can deposit a thin film having satisfactory properties by reducing or preventing temperature decrease of a source gas. An MOCVD...
|
|
|
7078316 |
Substrate joining apparatus
A joining roller rolls on the surface of a reinforcing substrate held by a center and side latch claws so as to be close and opposite to an wafer placed and held on a holding table in the condition...
|
|
|
7077159 |
Processing apparatus having integrated pumping system
An apparatus 115 for processing a substrate 20, comprises an integrated pumping system 155 having a high operating efficiency, small size, and low vibrational and noise levels. The apparatus ...
|
|
|
7078072 |
Method of modifying surface layer of molded resin and apparatus for modifying surface layer of molded resin
An organic compound having an affinity for a resin of a molded resin article and sublimation properties is allowed to penetrate/disperse into the surface of the molded resin article, thereby...
|
|
|
7074278 |
Removable lid and floating pivot
A semiconductor processing system includes a chamber adapted to process a wafer, the chamber having an opening to facilitate access to the interior of the chamber. The system has a lid coupled to...
|
|
|
7070657 |
Method and apparatus for depositing antireflective coating
This invention provides a stable process for depositing an antireflective layer. Helium gas is used to lower the deposition rate of plasma-enhanced silane oxide, silane oxynitride, and silane...
|
|
|
7067012 |
CVD coating device
The invention relates to a device for depositing especially, crystalline layers onto one or more, especially, also crystalline substrates in a process chamber using reaction gases which are guided...
|
|
|
7063981 |
Active pulse monitoring in a chemical reactor
A method and apparatus for determining changes in a supply system, designed to supply repeated pulses of a vapor phase reactant to a reaction chamber is disclosed. One embodiment involves providing...
|
|
|
7056388 |
Reaction chamber with at least one HF feedthrough
A reaction chamber for carrying out substrate coating methods is disclosed, having at least one opening in at least one outer wall in which an HF feedthrough is inserted in a pressure or vacuum...
|
|
|
7052576 |
Pressure control apparatus and method of establishing a desired level of pressure within at least one processing chamber
A desired level of pressure is established in at least one chamber that forms part of a closed atmosphere, such as in a semiconductor device processing facility. A pressure control system includes...
|
|
|
7052552 |
Gas chemistry cycling to achieve high aspect ratio gapfill with HDP-CVD
A method and apparatus are disclosed for depositing a dielectric film in a gap having an aspect ratio at least as large as 6:1. By cycling the gas chemistry of a high-density-plasma...
|
|
|
7049154 |
Vapor phase growth method by controlling the heat output in the gas introduction region
A vapor phase growth method for growing a semiconductor single crystal thin film on a front surface of a semiconductor single crystal substrate ( 1 ) while introducing gas into a reaction chamber (...
|
|
|
7048824 |
Device for treating silicon wafers
A device ( 1 ) for treating objects, in particular silicon wafers ( 2 ), with a fluid ( 3 ), comprising a container ( 4 ) that holds the fluid ( 3 ); a rotatable carrying arrangement ( 5 ) for...
|
|
|
7045473 |
Solid material gasification method, thin film formation process and apparatus
Solid material gasification method comprises a solution preparation step wherein a first solid material is dissolved in a solvent to prepare a gasification solution, a solvent removal step wherein...
|