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7402207 |
Method and apparatus for controlling the thickness of a selective epitaxial growth layer
Methods and systems for permitting thickness control of the selective epitaxial growth (SEG) layer in a semiconductor manufacturing process, for example raised source/drain applications in CMOS...
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7399364 |
Hermetic cap layers formed on low-κ films by plasma enhanced chemical vapor deposition
A method of forming a cap layer over a dielecrtic layer on a substrate including forming a plasma from a process gas including oxygen and tetraethoxysilane, and depositing the cap layer on the...
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7396415 |
Apparatus and methods for isolating chemical vapor reactions at a substrate surface
An apparatus and method for processing a substrate is provided. The apparatus comprises a reaction chamber, a substrate holder within the chamber, and first and second injector components. The...
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7396431 |
Plasma processing system for treating a substrate
A plasma processing system for treating a substrate includes a processing chamber including a first chamber portion configured to receive a first gas for providing a plasma space, and a second...
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7396411 |
Apparatus for manufacturing single crystal
A method for manufacturing a single crystal includes the steps of: flowing a raw material gas toward a seed crystal in a reactive chamber so that the single crystal grows from the seed crystal;...
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7393418 |
Susceptor
A susceptor at least a surface thereof being coated with SiC, includes a recess where an wafer is mounted, the recess having an round portion disposed on a lower portion of an outer circumferential...
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7390367 |
Housing assembly for an induction heating device including liner or susceptor coating
A housing assembly for an induction heating device defines a processing chamber and includes a susceptor and a thermally conductive liner. The susceptor surrounds at least a portion of the...
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7389580 |
Method and apparatus for thin-film battery having ultra-thin electrolyte
A method and system for fabricating solid-state energy-storage devices including fabrication films for devices without an anneal step. A film of an energy-storage device is fabricated by depositing...
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7390366 |
Apparatus for chemical vapor deposition
An apparatus for CVD is disclosed. Processing gas is injected to an upper center portion of a wafer supporting member by a gas focus ring installed at an inner side surface of a reaction chamber....
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7387686 |
Film formation apparatus
A metal atomic layer and an oxygen atomic layer are formed in this order by ALD, followed by rapid heating through RTA (Rapid Thermal Annealing). This cycle of steps is repeated to form a high...
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7388211 |
Semi-closed observational environment for electron microscope
A semi-closed observational environment for an electron microscope includes a housing having at least two spacers for partitioning itself into a receiving chamber, a gas chamber below the receiving...
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7387685 |
Apparatus and method for depositing materials onto microelectronic workpieces
Reactors for vapor deposition of materials onto a microelectronic workpiece, systems that include such reactors, and methods for depositing materials onto microelectronic workpieces. In one...
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7384876 |
Method and apparatus for determining consumable lifetime
A plasma processing device comprising a gas injection system is described, wherein the gas injection system comprises a gas injection assembly body, a consumable gas inject plate coupled to the gas...
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7380564 |
System and method for a mass flow controller
A system and method for controlling a mass flow controller to have a constant control loop gain under a variety of different types of fluids and operating conditions, and for configuring the mass...
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7381274 |
Gas valve assembly and apparatus using the same
A gas valve assembly for a deposition apparatus includes: a driving shaft including a plurality of gas supply paths therein; a housing surrounding the driving shaft and including a plurality of...
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7374941 |
Active reactant vapor pulse monitoring in a chemical reactor
A method and apparatus for determining changes in a supply system, designed to supply repeated pulses of a vapor phase reactant to a reaction chamber is disclosed. One embodiment involves providing...
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7374620 |
Substrate processing apparatus
A substrate processing apparatus ( 10 A) using a microwave plasma is disclosed wherein an inner partition wall ( 15 ) is provided within a process chamber ( 11 ) so that the inside of the process...
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7371467 |
Process chamber component having electroplated yttrium containing coating
A component capable of being exposed to a plasma in a process chamber has a structure having an electroplated coating comprising yttrium-containing species. The electroplated coating is resistant...
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7371285 |
Motorized chamber lid
A semiconductor processing chamber having a motorized lid is provided. In one embodiment, the semiconductor processing chamber generally includes a chamber body having sidewalls and a bottom...
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7364623 |
Confinement ring drive
A confinement assembly for a semiconductor processing chamber is provided. The confinement assembly includes a plurality of confinement rings disposed over each other. Each of the plurality of...
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7361229 |
Device for deposition with chamber cleaner and method for cleaning chamber
A chamber cleaner includes a cleaner, which is sealed, a connector passing through a side of the cleaner, lamp assembly connected to the connector and uniformly arranged in an inside surface of the...
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7361228 |
Showerheads for providing a gas to a substrate and apparatus
Showerheads including a plate having a plurality of gas outlet holes extending therethrough and a head cover coupled to the plate to form a space between the plate and the head cover. A gas supply...
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7353771 |
Method and apparatus of providing power to ignite and sustain a plasma in a reactive gas generator
According to a first aspect, a power supply and a method of providing power for igniting a plasma in a reactive gas generator is provided that includes (i) coupling a series resonant circuit that...
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7353841 |
Relative pressure control system and relative flow control system
Provided is a relative pressure control system has a simple configuration, but enables accurate regulation of a division ratio of an operation gas, and concurrently makes it possible to securely...
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7350476 |
Method and apparatus to determine consumable part condition
A system for monitoring a condition of a consumable component in a substrate processing system that includes a tapered plug having a first axis, a second axis that intersects the first axis, a top...
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7351293 |
Method and device for rotating a wafer
Method and device for rotating a wafer which is arranged floating in a reactor. The wafer is treated in a reactor of this nature, and it is important for this treatment to be carried out as...
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7347900 |
Chemical vapor deposition apparatus and method
A chemical vapor deposition (CVD) apparatus includes a process chamber where a deposition process is performed on a wafer. A gas supply assembly is mounted in the process chamber for supplying a...
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7343698 |
Reduced pressure drying apparatus and reduced pressure drying method
A reduced pressure drying apparatus comprises a substrate stage section for disposing thereon a substrate having the surface coated with a coating liquid containing a film-forming component and a...
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7338578 |
Step edge insert ring for etch chamber
An insert ring for a wafer support inside a processing chamber for the processing, particularly dry etching, of semiconductor wafer substrates. The insert ring has a generally step-shaped...
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7332040 |
Semiconductor manufacturing system having a vaporizer which efficiently vaporizes a liquid material
A vaporizer can efficiently vaporize a liquid material under a depressurized atmosphere. The liquid material is temporarily stored in a liquid storing chamber, and is supplied to a vaporizing...
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7332038 |
Device for depositing in particular crystalline layers on one or more, in particular likewise crystalline substrates
A device for depositing crystalline layers onto one or more substrates in a process chamber, including: a reverse-heatable support plate which forms a wall of the process chamber and which is...
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7332039 |
Plasma processing apparatus and method thereof
A nozzle head NH of a plasma processing apparatus comprises an annular inner holder 3 , an annular inner electrode 11 surrounding this holder 3 , an annular outer electrode 21 surrounding...
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7331307 |
Thermally sprayed member, electrode and plasma processing apparatus using the electrode
A thermally sprayed member or an electrode includes a basic material, a thermally sprayed film formed on the surface of the basic material, the thermally sprayed film being made of an insulating...
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7332032 |
Precursor mixtures for use in preparing layers on substrates
Methods of forming a layer on a substrate using complexes of Formula I. The complexes and methods are particularly suitable for the preparation of semiconductor structures. The complexes are of the...
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7329292 |
Process byproduct trap and system including same
A trap device including at least one substance delivery element for introducing a substance therein is disclosed. The delivered substance may influence the nature of deposits that have formed...
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7323207 |
Method and apparatus for fingerprint detection
A portable apparatus for detecting latent fingerprints that discharges a vapor of a cyanoacrylate-containing solution. The apparatus comprises a reservoir for holding a liquid solution comprising...
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7323212 |
Method and system of controlling dummy dispense
A dummy dispense of liquid is controlled by recording a time at which a substrate is processed; recording a time at which a liquid is dispensed; comparing the time at which the substrate is...
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7318869 |
Variable gas conductance control for a process chamber
A deposition system in accordance with one embodiment of the present invention includes a process chamber, a stationary pedestal for supporting a substrate in the process chamber, and a moveable...
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7316761 |
Apparatus for uniformly etching a dielectric layer
Apparatus for plasma etching a layer of material upon a substrate comprising an anode having a first region protruding from a second region, wherein the second region defines a plane and the first...
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7314527 |
Reactor system
A gas delivery system for delivering a gas to a reactor. The reactor has a reactor chamber, a gas inlet port, and a gas exhaust port. The gas delivery system included a torch chamber having an...
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7314525 |
Plasma CVD apparatus
A plasma CVD apparatus comprises a reaction container for allowing a reaction for forming a thin film on a semiconductor wafer to be performed, a bias electrode which applies a high frequency bias...
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7314526 |
Reaction chamber for an epitaxial reactor
Reaction chamer ( 10 ) for an epitaxial reactor comprising a belljar ( 14 ) made of insulating, transparent and chemically resistant material, a susceptor ( 24 ) provided with disk-shaped cavities...
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7314519 |
Vapor-phase epitaxial apparatus and vapor phase epitaxial method
A vapor-phase growth apparatus including a reaction furnace, a wafer container disposed in said furnace, a gas supply member, and a heating member, wherein the apparatus is designed to form a grown...
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7309395 |
System for forming composite polymer dielectric film
A system for depositing a composite polymer dielectric film on a substrate is disclosed, wherein the composite polymer dielectric film includes a low dielectric constant polymer layer disposed...
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7306707 |
Adaptable processing element for a processing system and a method of making the same
The present invention presents an adaptable processing element for use in a processing system having multiple configurations. The processing element comprises a primary component and at least one...
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7303141 |
Gas supplying apparatus
A gas supplying apparatus for supplying deposition gas onto a substrate surface, the gas supplying apparatus comprising: a gas supplying ring with one or more gas supplying channels formed along...
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7303635 |
Deposition mask, method for manufacturing display unit using it, and display unit
A deposition mask and a display unit and method of manufacturing same are provided. A red continuous organic layer, a green continuous organic layer, and a blue continuous organic layer are...
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7300558 |
Rapid cycle time gas burster
An apparatus for rapidly establishing at least one preselected gas pressure in a process chamber comprising:
(a) a chamber defining an interior space adapted to be maintained at a reduced...
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7299104 |
Substrate processing apparatus and substrate transferring method
Shock waves occurring when opening a gate valve between two vacuum chambers and peeling of particles by a viscous force taking place when a gas is supplied into a vacuum chamber are necessary to be...
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7294208 |
Apparatus for providing gas to a processing chamber
A method and apparatus for generating gas for a processing system is provided. In one embodiment, an apparatus for generating gas for a processing system includes a unitary, isolatable,...
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