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6348099 |
Methods and apparatus for depositing premetal dielectric layer at sub-atmospheric and high temperature conditions
The present invention provides systems, methods and apparatus for high temperature (at least about 500-800° C.) processing of semiconductor wafers. The systems, methods and apparatus of the...
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RE37546 |
Reactor and method of processing a semiconductor substrate
A reactor for processing a substrate includes a first housing defining a processing chamber and supporting a light source and a second housing rotatably supported in the first housing and adapted...
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6344084 |
Combinatorial molecular layer epitaxy device
A combinatorial molecular layer epitaxy apparatus is provided which includes a common chamber ( 22 ) having pressure therein controllable; one or more conveyable substrate heating units ( 36 )...
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6340499 |
Method to increase gas residence time in a reactor
An apparatus is provided for controlling the flow of gaseous reactants in a CVD reactor through the use of a body having interior and exterior regions, in which the body defines at least one flow...
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6340501 |
Device and method for manufacturing an optical recording medium
A manufacturing device of an optical recording medium having a plurality of recording layers formed on a substrate is provided. The manufacturing device includes a vacuum pre-treatment chamber( 52...
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6338872 |
Film forming method
A film forming method is described using an apparatus with a plurality of vacuum chambers which communicate with each other via a connection, where the apparatus has one or more detachable...
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6338759 |
Metal organic chemical vapor deposition apparatus and deposition method
A metal organic chemical vapor deposition apparatus comprising a source ampule, a liquid micro-pump, a vaporizer equipped with a solvent supply means, and a reactor. A reactant dissolved in a...
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6338979 |
Method of manufacturing organic EL device
In a method of manufacturing an organic EL device, an ITO transparent electrode 11 , organic layer 12 and upper electrode 13 are formed in a vacuum on a glass substrate 2 . They are sealed in...
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6334928 |
Semiconductor processing system and method of using the same
A semiconductor wafer etching system exhausts an exhaust gas including fluorocarbon gas to an exhaust line. Two traps, that are capable of trapping the fluorocarbon gas in the exhaust gas by cooled...
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6332927 |
Substrate processing apparatus
A substrate processing apparatus comprises a heating member, a reaction tube body provided in the heating member and having a first gas introducing section and a gas exhausting section, a substrate...
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6332928 |
High throughput OMPVE apparatus
A cold wall reactor having inner and outer walls defining an annular reactor cell. A susceptor is rotatably mounted in the cell, and received wafers to be treated by gases flowing axially through...
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6332925 |
Evacuation system
An evacuation system having a long service life, a compact configuration and high reliability is disclosed. The system enables the process gases to be reused, so that the overall costs of capital...
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6328805 |
Equipment for processing a container using a low-pressure plasma having an improved vacuum circuit
Device for processing a container (30) using a low pressure plasma, of the type having at least one processing station (14) comprising a fixed cavity (32) connected to a vacuum source by way of a...
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6328804 |
Chemical vapor deposition of metals on a spherical shaped semiconductor substrate
A method and system for chemical vapor deposition (MO CVD) of a metal layer upon a spherical substrate at atmospheric pressure are disclosed. The method performs chemical vapor deposition of a...
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6328803 |
Method and apparatus for controlling rate of pressure change in a vacuum process chamber
A method, apparatus and system for controlling a rate of pressure change in a vacuum process chamber during pump down and vent up cycles of a vacuum process are provided. The method includes...
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6328221 |
Method for controlling a gas injector in a semiconductor processing reactor
A single computer controls both a reactor and a gas jet assembly in a system. The gas jet assembly is mounted to the reactor such that a gas injector extends into the reactor. The gas injector...
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6325858 |
Long life high temperature process chamber
A generally horizontally-oriented quartz CVD chamber is disclosed with front and rear chamber divider plates adjacent a centrally positioned susceptor and surrounding temperature control ring which...
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6322631 |
Heat treatment method and its apparatus
When the processed body holding member is moved upward or downward, the pressure in the reaction pipe and the shift and mount chamber is reduced down to several to several tens Torr, to reduce wind...
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6319324 |
Method and apparatus for elimination of TEOS/ozone silicon oxide surface sensitivity
A method and apparatus for reducing surface sensitivity of a TEOS/O 3 SACVD silicon oxide layer, formed over a substrate, that deposits a ramp layer while ramping pressure to a target deposition...
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6316052 |
Method for the surface treatment of vacuum materials and surface treated vacuum
A method for the surface treatment of vacuum materials reduces the H 2 O sticking probability on the surface of the vacuum material. The H 2 O sticking probability is reduced by selectively...
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6316045 |
Method and apparatus for conditioning the atmosphere in a process chamber
In the invention, the atmosphere in a process chamber is conditioned using a primary pump, a secondary pump, speed control means for controlling the speed of the primary pump, and at least first...
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6315859 |
Apparatus and method for improving uniformity in batch processing of semiconductor wafers
A novel batch processing system used, for example, in plasma etching and chemical vapor deposition, wherein the pressure in the reactor is cycled through a varying pressure to increase the transfer...
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6312569 |
Chemical vapor deposition apparatus and cleaning method thereof
A chemical vapor deposition apparatus for depositing a thin film of highly dielectric materials for giga-capacity memory devices can reliably clean reaction products formed within the deposition...
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6309465 |
CVD reactor
A CVD reactor comprising: a reactor casing with a casing cover, a heated susceptor for one wafer or several wafers, which is disposed in the reactor casing, a fluid inlet unit including a plurality...
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6306216 |
Apparatus for deposition of thin films on wafers through atomic layer epitaxial process
The present invention provides an apparatus for deposition of thin films on a plurality of wafers through an atomic layer epitaxial process within a reaction chamber. The apparatus has a susceptor,...
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6302963 |
Bell jar having integral gas distribution channeling
A thermal process chamber (10) is provided for processing substrates contained therein, comprising (i) a main processing portion (12) in which a substrate to be processed may be positioned, the...
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6302056 |
Device for coating substrates with a material vapor in negative pressure or vacuum
An apparatus for coating a substrate with a material vapor in negative pressure includes a material vapor source for releasing a material vapor and an ionization device having a cold cathode and a...
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6302966 |
Temperature control system for plasma processing apparatus
A plasma processing system that includes a temperature management system and method that can achieve very accurate temperature control over a plasma processing apparatus is disclosed. In one...
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6302964 |
One-piece dual gas faceplate for a showerhead in a semiconductor wafer processing system
A one-piece gas distribution faceplate for a showerhead. The one-piece gas distribution faceplate includes a first surface, a second surface, and a third surface. The one-piece gas distribution...
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6302965 |
Dispersion plate for flowing vaporizes compounds used in chemical vapor deposition of films onto semiconductor surfaces
A dispersion plate for evenly flowing at low pressure into a processing chamber vaporized material, such as a tungsten compound for deposition of metal layers onto a semiconductor, has a disc-like...
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6302962 |
Diffusion system having air curtain formation function for manufacturing semiconductor devices and method of controlling the same
A diffusion system for manufacturing semiconductor devices has an air curtain formed across a furnace opening for preventing the loss of heat energy from inside the furnace. The diffusion system...
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6299683 |
Method and apparatus for the production of SiC by means of CVD with improved gas utilization
A process gas stream (2) is generated, from which SiC is deposited on a substrate (4) by means of CVD. Furthermore, a second gas stream (3) of an inert gas is generated, which substantially...
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6299692 |
Head for vaporizing and flowing various precursor materials onto semiconductor wafers during chemical vapor deposition
A vaporizer head for evenly flowing at low pressure into a processing chamber vaporized precursor compounds for deposition of metal and other layers onto a semiconductor, has a bulb-like body with...
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6299722 |
Etching equipment including a post processing apparatus for removing a resist film, polymer, and impurity layer from an object
The present invention discloses a method including the main etching step for etching a semiconductor wafer having a resist film serving as an etching mask by plasma of an etching gas, and an...
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6299691 |
Method of and apparatus for processing a substrate under a reduced pressure
A method of performing treatment under a reduced pressure for processing a substrate placed in a chamber, includes the steps of providing a heater within the chamber, for heating the substrate,...
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6296712 |
Chemical vapor deposition hardware and process
The invention provides a substrate support member and a purge guide for directing purge gas past the edge of a substrate and towards the outer perimeter of the chamber. The purge guide includes a...
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6296709 |
Temperature ramp for vertical diffusion furnace
An improved vertical diffusion furnace for semiconductor manufacturing processes is provided. Temperature and flow rate management enables more uniform temperature distribution across the wafer...
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6296710 |
Multi-port gas injector for a vertical furnace used in semiconductor processing
A multi-port gas injector for a vertical furnace that is utilized for low-pressure chemical vapor deposition of silicon dioxide using a tetraethyl orthosilicate ("TEOS") source is provided. The...
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6296793 |
Composition for preparing water-repellent coatings on optical substrates
Composition for preparing water-repellent coatings on optical substrates, comprising a porous, electrically conductive molding and an organosilicon compound, obtainable by mixing an electrically...
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6294026 |
Distribution plate for a reaction chamber with multiple gas inlets and separate mass flow control loops
The present invention is an apparatus for distributing reactant gases across the substrate mounted in a reaction chamber. The apparatus is capable of being utilized in both vapor deposition and...
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6294025 |
Device for producing oxidic thin films
The invention relates to an apparatus for the production of thin oxide coatings, having a vacuum chamber wherein an oxygen chamber with an opening and a rotary substrate holder overlapping the...
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6289842 |
Plasma enhanced chemical vapor deposition system
A Metal Organic Chemical Vapor Deposition (MOCVD) system particularly suitable for use at low deposition pressures and high or low temperatures. The system includes a reactor chamber having a...
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6287413 |
Apparatus for processing both sides of a microelectronic device precursor
The apparatus of the present invention provides for the dual use of a UV source to heat a substrate and to facilitate photochemistry necessary for the treatment of the substrate. The present...
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6287984 |
Apparatus and method for manufacturing semiconductor device
A loading area capable of forming a sealed space in co-operation with a reaction chamber is provided. In a state in which the inner space of the reaction chamber is separated from the inner space...
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6284049 |
Processing apparatus for fabricating LSI devices
A part of the outer wall of the processing chamber supplied with an active gas for an intended processing forms a protruding section extending out from the outer wall into the air. An incident side...
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6284050 |
UV exposure for improving properties and adhesion of dielectric polymer films formed by chemical vapor deposition
An ultraviolet-assisted chemical vapor deposition system for improving the adhesion, hardness, and thermal stability of organic polymer films deposited on semiconductor wafers is provided. The...
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6280525 |
Apparatus for manufacturing silica film
An apparatus for manufacturing a silica film is provided. The apparatus includes a conveyor including a mounting unit where a plurality of wafers are loaded. The conveyor is used for moving and...
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6280790 |
Reducing the deposition rate of volatile contaminants onto an optical component of a substrate processing system
A system and a method for reducing the rate at which volatile contaminants are deposited onto one or more optical components of a substrate processing system are disclosed. A purge fluid is...
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6277294 |
Method of producing ink jet head valve, method of producing ink jet head and ink jet head produced by the method
A method of producing an ink jet head valve for an ink jet head having a discharge port for discharging ink, an ink flow path communicated with said discharge port and an electrothermal converting...
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6277199 |
Chamber design for modular manufacturing and flexible onsite servicing
The present invention provides a semiconductor fabrication process and cluster tool utilizing individual gas boxes for each of the processing chambers. These individual gas boxes provide an...
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