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6562705 Method and apparatus for manufacturing semiconductor element  
A laser heating apparatus for forming an electrode on one surface of an Si chip provided on an Si wafer, thereby producing a semiconductor element, comprises a high vacuum chamber having a light...
6561220 Apparatus and method for increasing throughput in fluid processing  
A method and an apparatus, the apparatus including appropriate valves and conduits, for increasing throughput in pressurized fluid processing including storing in a storage chamber of the apparatus...
6554906 Wafer holder for semiconductor manufacturing apparatus and semiconductor manufacturing apparatus using the same  
A wafer holder is configured of a pair of ceramic base members and conductive layers each posed between the ceramic base members. The conductive layer has a body facing a wafer and an extension...
6554954 Conductive collar surrounding semiconductor workpiece in plasma chamber  
A plasma chamber apparatus and method having a process kit capable of reducing or eliminating electrical arcing from exposed metal at the perimeter of a workpiece. The plasma chamber includes a...
6551404 Apparatus for treating a wafer  
An apparatus for treating a wafer manufactured from semiconducting material, the apparatus comprising a first and a second housing part arranged for movement away front and towards each other, the...
6549825 Alignment apparatus  
An alignment apparatus which obtains an amount of correction for centering a semiconductor wafer from four points of a wafer edge detected by noncontact proprioceptors in a wafer delivery position...
6547885 Multipurpose draft shield apparatus  
A draft shield apparatus having a longitudinal axis including: an open upper end section defining a substrate entry end, an open lower end section defining a substrate exit end, and a central...
6544339 Rectilinear wedge geometry for optimal process control in chemical vapor deposition and rapid thermal processing  
A processing reactor for processing semiconductor substrates includes a reactor housing, which defines a processing chamber, and a platform which is rotatably supported in the reactor housing for...
6544341 System for fabricating a device on a substrate with a process gas  
A method and system for fabricating a device on a substrate with a process gas, such as with chemical vapor deposition. A reaction chamber and support chuck cooperate to form a low conductance...
6544340 Heater with detachable ceramic top plate  
A substrate support assembly for supporting a substrate during processing is provided. In one embodiment, a support assembly includes a support plate supported by a second plate. The support plate...
6539890 Multiple source deposition plasma apparatus  
An apparatus for forming a film on a substrate includes a gas inlet and an insert attached to the gas inlet, the insert including a deposition source material such as lithium. To form the film on...
6540839 Apparatus and method to passivate magnets and magnetic materials  
An apparatus and method is provided for uniformly coating a magnet having a plurality of surfaces and includes a reaction chamber having a port for introducing the magnet into the reaction chamber....
6540838 Apparatus and concept for minimizing parasitic chemical vapor deposition during atomic layer deposition  
A new method and apparatus for avoiding contamination of films deposited in layered depositions, such as Atomic Layer Deposition (ALD) and other sequential chemical vapor deposition (CVD)...
6539891 Chemical deposition reactor and method of forming a thin film using the same  
A chemical deposition reactor capable of switching rapidly from one process gas to another and method of forming a thin film using the same. The reactor of the present invention comprises: a...
6540837 Quartz wafer processing chamber  
Described herein is a process chamber with a substantially all-quartz interior surface. The preferred embodiments have upper and lower walls being curved in both the x-z and y-z planes. In one...
6537924 Method of chemically growing a thin film in a gas phase on a silicon semiconductor substrate  
A method of chemically growing a thin film in a gas phase using a rotary gaseous phase thin film growth apparatus which feeds a material gas by flowing down the gas from above to a surface of a...
6537418 Spatially uniform gas supply and pump configuration for large wafer diameters  
A gas distribution plate ( 60 ) for a semiconductor processing chamber ( 86 ) includes a gas distribution plate for distributing gases across a surface of a semiconductor wafer ( 84 ) to be...
6533868 Deposition apparatus  
This invention relates to an apparatus for depositing a layer of material on to a workpiece. The apparatus includes chamber 11, a sputter target 12, a wafer support 13, wafer transport...
6533867 Surface sealing showerhead for vapor deposition reactor having integrated flow diverters  
The present invention relates to an improved structure of the “showerhead used to introduce gaseous source material into a vapor deposition reactor such as a metal-organic chemical vapor...
6530992 Method of forming a film in a chamber and positioning a substitute in a chamber  
Methods and apparatuses of forming a film on a substrate including introducing a pretreatment material into a processing chamber sufficient to form a film as a portion of an inner surface of the...
6528435 Plasma processing  
An apparatus and method for depositing a thin film on a semiconductor substrate. The apparatus includes a chamber or housing suited for holding a plurality of wafer platforms. The wafer platforms...
6527865 Temperature controlled gas feedthrough  
The invention relates to an apparatus and process for the vaporization of liquid precursors and deposition of a film on a suitable substrate. In one aspect, an apparatus and process for the control...
6528395 Method of fabricating compound semiconductor device and apparatus for fabricating compound semiconductor device  
A method of fabricating a compound semiconductor device having an ohmic electrode of a low contact potential includes a first cleaning step of heating a compound semiconductor substrate containing...
6521042 Semiconductor growth method  
Molecular beam epitaxy ( 202 ) with growing layer thickness control ( 206 ) by feedback of mass spectrometer ( 204 ) signals based on a process model. Examples include III-V compound structures...
6521046 Chamber material made of Al alloy and heater block  
A chamber material made of Al alloy excellent in thermal cracking resistance and chemical and/or physical corrosion resistance and capable of reducing contamination excellently and further having...
6517634 Chemical vapor deposition chamber lid assembly  
A semiconductor substrate processing chamber is disclosed generally comprising a chamber body that has a semiconductor substrate support assembly disposed in the chamber body. A lid assembly is...
6514348 Substrate processing apparatus  
A substrate processing apparatus processes a substrate introduced into a chamber under a low pressure. The substrate processing apparatus comprises a vacuum pump for evacuating a chamber and a gas...
6513452 Adjusting DC bias voltage in plasma chamber  
A method of adjusting the cathode DC bias in a plasma chamber for fabricating semiconductor devices. A dielectric shield is positioned between the plasma and a selected portion of the electrically...
6508913 Gas distribution apparatus for semiconductor processing  
A gas distribution system for processing a semiconductor substrate includes a plurality of gas supplies, a mixing manifold wherein gas from the plurality of gas supplies is mixed together, a...
6508197 Apparatus for dispensing gas for fabricating substrates  
A method and system for fabricating a device on a substrate with a process gas, such as with chemical vapor deposition. A reaction chamber and support chuck cooperate to form a low conductance...
6506312 Vapor deposition chamber components and methods of making the same  
The present invention provides a method of reducing or delaying the exfoliation of deposited films within a vapor deposition system. The method of preventing the delamination of thin films...
6506255 Apparatus for supplying gas used in semiconductor processing  
A method and apparatus for uniformly supplying a gas into a chamber through a dispersion head. The gas is introduced through an inlet of the dispersion head, and flows in a flow direction toward a...
6506253 Photo-excited gas processing apparatus for semiconductor process  
A CVD apparatus includes a process chamber connected to a process chamber through a connection path. A window made of a light transmission material is disposed in a wall that defines the excitation...
6503362 Atomizing nozzle an filter and spray generating device  
A nozzle assembly for use in atomizing and generating sprays from a fluid. The nozzle assembly includes two members, each with generally planar surfaces, that are joined together. A first set of...
6503562 Semiconductor fabrication apparatus and fabrication method thereof  
An epitaxial growth system is provided with a susceptor driving mechanism for rotationally driving a susceptor in a process chamber and this susceptor driving mechanism has a support shaft coupled...
6500266 Heater temperature uniformity qualification tool  
An apparatus of a reactor or processing chamber comprising a chamber having a resistive heater disposed within a volume of the chamber, including a stage having a surface area to support a...
6500263 Semiconductor substrate processing chamber having interchangeable lids actuating plural gas interlock levels  
Multiple levels of interlocks are provided relative to gas flow for a chemical vapor deposition chamber. When a chamber lid used for normal processing is in place, no interlock is in effect. When a...
6499973 Turbo molecular pump  
A turbo molecular pump comprises a pump body having a vacuum chamber, a gas inlet port and a gas outlet port. A rotor shaft is mounted in the pump body for undergoing rotation. A rotor vane section...
6499426 System and method for coating non-planar surfaces of objects with diamond film  
A system and method for depositing a CVD diamond coating on a non-planar surface of an object is provided. The system includes a deflector having a deflecting surface which resists diamond coating...
6498104 Method of in-situ cleaning for LPCVD TEOS pump  
In one embodiment, the present invention relates to a method of cleaning a low pressure chemical vapor deposition apparatus having TEOS material build-up therein involving contacting the low...
6494955 Ceramic substrate support  
A substrate support assembly for supporting a substrate during processing is provided. In one embodiment, a support assembly includes a top ceramic plate having a first side, a bottom ceramic plate...
6495233 Apparatus for distributing gases in a chemical vapor deposition system  
A lid assembly for a semiconductor processing apparatus having at least two chambers comprises a lid plate having a first side and a second side and a plasma generation source mounted to the first...
6491758 CVD apparatus equipped with moisture monitoring  
A CVD apparatus is able to efficiently perform purging treatment after maintenance by using for the purge gas a mixed gas of a high thermal conductivity and an inert gas. Purging treatment before...
6488775 Semiconductor-manufacturing device  
A batch-processing type semiconductor-manufacturing device includes a cylindrical reaction chamber with its upper end closed and its bottom end open, a substrate-supporting boat loading multiple...
6488776 Method and apparatus for forming insitu boron doped polycrystalline and amorphous silicon films  
A method and apparatus for depositing a boron insitu doped amorphous or polycrystalline silicon film on a substrate. According to the present invention, a substrate is placed into deposition...
6488774 Trap apparatus  
A trap apparatus is optimum for trapping a material gas discharged from a vapor deposition apparatus for depositing in a vapor phase thin films of high-dielectric or ferroelectric such as...
6485565 Process and apparatus for making oriented crystal layers  
Thin films of single crystal-like materials are made by using flow-through ion beam deposition during specific substrate rotation around an axis in a clocking action. The substrate is quickly...
6482266 Metal organic chemical vapor deposition method and apparatus  
In a metal organic chemical vapor deposition method, a parameter convertible into the number of moles of gas of an organometallic source supplied from at least one source vessel is detected. A...
6481368 Device and a method for heat treatment of an object in a susceptor  
A device for heat treatment of an object comprises a susceptor ( 9 ) having walls ( 10 ) surrounding an inner room ( 11 ) adapted to receive the object and Rf-field radiating means ( 12, 15 )...
6478875 Method and apparatus for determining process-induced stresses and elastic modulus of coatings by in-situ measurement  
An apparatus for performing in-situ curvature measurement of a substrate during a deposition process is provided which includes a clamp for retaining the substrate near one end while leaving the...