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9200381 Producing high quality bulk silicon carbide single crystal by managing thermal stresses at a seed interface  
A method is disclosed for producing a high quality bulk single crystal of silicon carbide in a seeded growth system by reducing the separation between a silicon carbide seed crystal and a seed...
9039833 Method for the production of solar grade silicon  
The present invention relates to a method for the preparation of solar grade silicon comprising crystallization of large high purity silicon crystals in a hyper eutectic binary or ternary alloy...
9040010 Apparatus for manufacturing single crystal silicon ingot having reusable dual crucible for silicon melting  
The present disclosure provides an apparatus for manufacturing a single crystal silicon ingot having a dual crucible for silicon melting which can be reused due to a dual crucible structure. The...
9039835 Apparatus for producing multicrystalline silicon ingots by induction method  
An apparatus for producing multicrystalline silicon ingots by the induction method comprises an enclosure, which includes means for start-up heating of silicon and a cooled crucible enveloped by...
9039834 Non-polar gallium nitride thin films grown by metalorganic chemical vapor deposition  
Non-polar (11 20) a-plane gallium nitride (GaN) films with planar surfaces are grown on (1 102) r-plane sapphire substrates by employing a low temperature nucleation layer as a buffer layer prior...
9039832 High pressure high temperature (HPHT) method for the production of single crystal diamonds  
A high pressure high temperature (HPHT) method for synthesizing single crystal diamond, wherein a single crystal diamond seed having an aspect ratio of at least (1) and a growth surface...
9034463 BNA crystal  
An object of the present invention is to produce a non-conventional high-quality BNA single crystal. Another object of the present invention is to provide a process for producing the...
9034102 Method of fabricating hybrid orientation substrate and structure of the same  
A method of fabricating a hybrid orientation substrate is described. A silicon substrate with a first orientation having a silicon layer with a second orientation directly thereon is provided, and...
9034104 Method for manufacturing a semiconductor device comprising single- and multi-component oxide semiconductor layers  
A larger substrate can be used, and a transistor having a desirably high field-effect mobility can be manufactured through formation of an oxide semiconductor layer having a high degree of...
9034103 Aluminum nitride bulk crystals having high transparency to ultraviolet light and methods of forming them  
In various embodiments, methods of forming single-crystal AlN include providing a substantially undoped polycrystalline AlN ceramic having an oxygen concentration less than approximately 100 ppm,...
9031685 Atomic layer deposition apparatus  
A method and apparatus for atomic layer deposition (ALD) is described. In one embodiment, an apparatus comprises a vacuum chamber body having a contiguous internal volume comprised of a first...
9029243 Method for producing a semiconductor device and field-effect semiconductor device  
A method for producing a semiconductor device is provided. The method includes providing a wafer including a main surface and a silicon layer arranged at the main surface and having a nitrogen...
9028611 Method for producing group III nitride semiconductor  
A method for producing a Group III nitride semiconductor includes reacting a molten mixture containing at least a Group III element and an alkali metal with a gas containing at least nitrogen, to...
9028612 Growth of large aluminum nitride single crystals with thermal-gradient control  
In various embodiments, non-zero thermal gradients are formed within a growth chamber both substantially parallel and substantially perpendicular to the growth direction during formation of...
9023673 Free HCL used during pretreatment and AlGaN growth to control growth layer orientation and inclusions  
A method to grow single phase group III-nitride articles including films, templates, free-standing substrates, and bulk crystals grown in semi-polar and non-polar orientations is disclosed. One or...
9024338 Device with nitride nanowires having a shell layer and a continuous layer  
The present invention relates to the growing of nitride semiconductors, applicable for a multitude of semiconductor devices such as diodes, LEDs and transistors. According to the method of the...
9023152 CLBO crystal growth  
A solution-stirring top-seeded solution-growth method for forming CLBO of the type where water is added to a precursor mixture, where heavy water is substituted for the water.
9023306 Ultratough single crystal boron-doped diamond  
The invention relates to a single crystal boron doped CVD diamond that has a toughness of at least about 22 MPa m1/2. The invention further relates to a method of manufacturing single crystal...
9023427 Methods for forming multi-component thin films  
Atomic layer deposition of multi-component, preferably multi-component oxide, thin films. Provide herein is a method for depositing a multi-component oxide film by, for example, an ALD or PEALD...
9017632 Diamond material  
A method of making fancy pale blue or fancy pale blue/green CVD diamond material is described. The method comprises irradiating single crystal diamond material that has been grown by a CVD process...
9017479 Nitride single crystal manufacturing apparatus  
The apparatus has a crucible for storing a solution; an inner container for storing a crucible; a heating container for storing the inner container, the heating container including heating...
9017633 CVD single crystal diamond material  
Single crystal diamond material produced using chemical vapour deposition (CVD), and particularly diamond material having properties suitable for use in optical applications such as lasers, is...
9017629 Intra-cavity gettering of nitrogen in SiC crystal growth  
In method of crystal growth, an interior of a crystal growth chamber (2) is heated to a first temperature in the presence of a first vacuum pressure whereupon at least one gas absorbed in a...
9017477 Process for producing colloidal crystal and colloidal crystal  
Provided is a process for producing colloidal crystals from which a large single crystal reduced in lattice defects and unevenness can be easily produced at low cost without fail. The process for...
9017478 Apparatus and method for extracting a silicon ingot made by an electromagnetic continuous casting method  
Provided are an apparatus and method of extracting a silicon ingot. The apparatus for extracting a silicon ingot includes a chamber in which a silicon source material introduced into a cold...
9011598 Method for making a composite substrate and composite substrate according to the method  
The present invention provides methods for fabricating a composite substrate including a supporting substrate and a layer of a binary or ternary material having a crystal form that is non-cubic...
9011715 Process for manufacturing colloidal materials, colloidal materials and their uses  
A colloidal material and a process for manufacturing it and uses of the colloidal material for manufacturing optic devices. The colloidal material is of formula AnXm, wherein A is an element...
9011599 Method of temperature determination for deposition reactors  
A method of determining a temperature in a deposition reactor includes the steps of depositing a first epitaxial layer of silicon germanium on a substrate, depositing a second epitaxial layer of...
9005466 Highly insulative and highly stable piezoelectric single LTGA crystal, method for producing the same, piezoelectric element using said single LTGA crystal, and combustion pressure sensor  
In accordance with the present invention, there is provided a method for producing a single LTGA crystal from a polycrystalline starting material prepared from a mixture of La2O3, Ta2O5, Ga2O3,...
9005362 Method for growing group III nitride crystal  
The present invention is to provide a method for growing a group III nitride crystal that has a large size and has a small number of pits formed in the main surface of the crystal by using a...
9005363 Crystalline film devices, apparatuses for and methods of fabrication  
Methods of depositing thin film materials having crystalline content are provided. The methods use plasma enhanced chemical vapor deposition. According to one embodiment of the present invention,...
8999060 Method of growing GaN whiskers from a gallium-containing solvent at low pressure and low temperature  
Millimeter-scale GaN single crystals in filamentary form, also known as GaN whiskers, grown from solution and a process for preparing the same at moderate temperatures and near atmospheric...
8999061 Method for producing silicon epitaxial wafer  
The method for producing a silicon epitaxial wafer according to the present invention has: a growth step G at which an epitaxial layer is grown on a silicon single crystal substrate; a first...
8999058 High-productivity porous semiconductor manufacturing equipment  
This disclosure enables high-productivity fabrication of semiconductor-based separation layers (made of single layer or multi-layer porous semiconductors such as porous silicon, comprising single...
8999059 Process for producing a nitride single crystal and apparatus therefor  
A growth apparatus is used having a plurality of crucibles each for containing the solution, a heating element for heating the crucible, and a pressure vessel for containing at least the crucibles...
8992684 Epitaxy reactor internal component geometries for the growth of superior quality group III-nitride materials  
The geometry of transition from cylindrical to rectangular shape through the conical part in hydride vapor phase epitaxial (HVPE) systems for deposition of III-nitride films is disclosed. It is...
8992683 Apparatus for producing crystals  
Highly-qualified crystals are grown with good yield under an optimal temperature condition by controlling the axial temperature distribution in the vicinity of the seed crystal locally. In an...
8992877 Method for growing monocrystalline diamonds  
A method of forming mono-crystalline diamond by chemical vapor deposition, the method comprising the steps of: (a) providing at least one diamond seed; (b) exposing the seed to conditions for...
8992682 Graphite crucible and silicon single crystal manufacturing apparatus  
A graphite crucible for silicon single crystal manufacturing by the Czochralski method, having a long life cycle, contains at least one gas venting hole provided in a corner portion of the...
8986446 Si-doped GaAs single crystal ingot and process for producing the same, and Si-doped GaAs single crystal wafer produced from Si-doped GaAs single crystal ingot  
This invention provides an Si doped GaAs single crystal ingot, which has a low crystallinity value as measured in terms of etch pit density (EPD) per unit area and has good crystallinity, and a...
8986447 High pressure apparatus and method for nitride crystal growth  
A high pressure apparatus and related methods for processing supercritical fluids. In a specific embodiment, the present apparatus includes a capsule, a heater, at least one ceramic ring but can...
8986646 Diamond material  
A method of introducing NV centers in single crystal CVD diamond material is described. One step of the method comprises irradiating diamond material that contains single substitutional nitrogen...
8986449 Device and a method for promoting crystallisation  
The invention relates to a microfluidic device for promoting crystallization of target molecules, such as proteins. The device comprises a solid structure with a top face and an opposite bottom...
8986464 Semiconductor substrate and method for producing semiconductor substrate  
A semiconductor substrate includes: single crystal silicon; a mask material formed on a surface of the single crystal silicon and having an opening; a silicon carbide film formed on a portion...
8986645 Diamond  
A method of producing a CVD single crystal diamond layer on a substrate includes adding into a DVD synthesis atmosphere a gaseous source comprising silicon. The method can be used to mark the...
8986448 Method of manufacturing single crystal 3C-SiC substrate and single crystal 3C-SiC substrate obtained from the manufacturing method  
To provide a method of manufacturing a single crystal 3C-SiC substrate that can dramatically reduce surface defects generated in a processing of epitaxial growth and can secure a quality as a...
8986835 Growth process for gallium nitride porous nanorods  
A GaN nanorod and formation method. Formation includes providing a substrate having a GaN film, depositing SiNx on the GaN film, etching a growth opening through the SiNx and into the GaN film,...
8987069 Semiconductor substrate with multiple SiGe regions having different germanium concentrations by a single epitaxy process  
A substrate with two SiGe regions having different Germanium concentrations and a method for making the same. The method includes: providing a substrate with at least two active regions;...
8986572 Calcium fluoride optics with improved laser durability  
The invention is directed to calcium fluoride crystal optics with improved laser durability that can be used for the transmission of below 250 nanometer (nm) electromagnetic radiation. The optics...
8980003 Method of manufacturing silicon carbide single crystal  
In a method of manufacturing a silicon carbide single crystal, a silicon carbide substrate having a surface of one of a (11-2n) plane and a (1-10n) plane, where n is any integer number greater...