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8197595 Method and device for producing thin silicon rods  
A method for producing thin silicon rods using a floating zone crystallization process includes supplying high frequency (HF) current to a flat induction coil having a central opening, a plurality...
8197596 Crystal growth method and reactor design  
A crystal growth process comprising providing a reactor having a crucible with an injector apparatus and a seed holder. The injector apparatus has an inner gas conduit and an outer gas conduit...
8197594 Silicon wafer for semiconductor and manufacturing method thereof  
Silicon wafers having a density of BMDs with sizes between 20 to 40 nm at positions ≧20 μm below the wafer surface in the range of 5×1011/cm3, and a density of BMDs with sizes of ≧300 nm≦1×...
8198628 Doped substrate to be heated  
A semiconductor structure that is to be heated. The structure includes a substrate for the front face deposition of a useful layer intended to receive components for electronics, optics or...
8197598 Method for manufacturing iron silicide nano-wires  
A method for making iron silicide nano-wires comprises the following steps. Firstly, providing a growing substrate and a growing device, the growing device comprising a heating apparatus and a...
RE43469 Single crystals and methods for fabricating same  
Various single crystals are disclosed including sapphire. The single crystals have desirable geometric properties, including a width not less than about 15 cm and the thickness is not less than...
8197597 Gallium trichloride injection scheme  
The present invention is related to the field of semiconductor processing equipment and methods and provides, in particular, methods and equipment for the sustained, high-volume production of Group...
8193537 Optically controlled silicon carbide and related wide-bandgap transistors and thyristors  
An optically active material is used to create power devices and circuits having significant performance advantages over conventional methods for affecting optical control of power electronics...
8192543 Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the same  
A nitride crystal is characterized in that, in connection with plane spacing of arbitrary specific parallel crystal lattice planes of the nitride crystal obtained from X-ray diffraction measurement...
8192544 Apparatus for manufacturing poly crystaline silicon ingot for solar battery having door open/close device using hinge  
Disclosed herein is an apparatus for manufacturing a polycrystalline silicon ingot for solar batteries having a door control device using a hinge. The apparatus includes a vacuum chamber, a...
8192713 Method of incorporating a mark in CVD diamond  
A method of incorporating a mark of origin, such as a brand mark, or fingerprint in a CVD single crystal diamond material, includes the steps of providing a diamond substrate, providing a source...
RE43450 Method for fabricating semiconductor thin film  
An object of the present invention is to provide a technology of reducing a nickel element in the silicon film which is crystallized by using nickel. An extremely small amount of nickel is...
8187563 Method for producing Si bulk polycrystal ingot  
A method is provided for producing a Si bulk polycrystal ingot with high quality and high homogeneity, which has no significant crystal defects and is free from diffused impurities with a high...
8187383 Semiconductor single crystal manufacturing device and manufacturing method  
In order to provide a semiconductor single crystal manufacturing device and a manufacturing method using a CZ method wherein the resistivity and oxygen concentration of a silicon single crystal can...
8187382 Polycrystalline silicon manufacturing apparatus  
A polycrystalline silicon manufacturing apparatus is provided which supplies raw gas to the inside of a reaction furnace and supplies a current from an electrode to a silicon seed rod in a state...
8187381 Process gas delivery for semiconductor process chamber  
Methods and apparatus for a gas delivery assembly are provided herein. In some embodiments, the gas delivery assembly includes a gas inlet funnel having a first volume and one or more gas conduits;...
8187956 Method for manufacturing microcrystalline semiconductor film, thin film transistor having microcrystalline semiconductor film, and photoelectric conversion device having microcrystalline semiconductor film  
A method for forming a microcrystalline semiconductor film over a base formed of a different material, which has high crystallinity in the entire film and at an interface with the base, is...
8187379 Method of producing high quality relaxed silicon germanium layers  
A method for minimizing particle generation during deposition of a graded Si1-xGex layer on a semiconductor material includes providing a substrate in an atmosphere including a Si precursor and a...
8188573 Nitride semiconductor structure  
A nitride semiconductor substrate and a method for manufacturing the same are provided. The nitride semiconductor substrate includes an epitaxy substrate, a nitride pillar layer, a nitride...
8187377 Non-contact etch annealing of strained layers  
The present invention provides for treating a surface of a semiconductor material. The method comprises exposing the surface of the semiconductor material to a halogen etchant in a hydrogen...
8188512 Growth of germanium epitaxial thin film with negative photoconductance characteristics and photodiode using the same  
A method of growing a germanium (Ge) epitaxial thin film having negative photoconductance characteristics and a photodiode using the same are provided. The method of growing the germanium (Ge)...
8187378 Silicon single crystal pulling method  
An object of the present invention is to provide a silicon single crystal pulling method of accurately controlling the diameter of a silicon single crystal, thereby obtaining a high-quality silicon...
8187380 Method of growing single crystal diamond in a plasma reactor  
Synthetic monocrystalline diamond compositions having one or more monocrystalline diamond layers formed by chemical vapor deposition, the layers including one or more layers having an increased...
8182607 In-situ crystalline material screening apparatus and method  
There is provided a method and apparatus for assessing in-situ crystal formation in a test sample. Both optical imaging and X-ray diffraction techniques are utilized, with the results of these...
8177910 System and method for crystal growing  
To reduce the heat input to the bottom of the crucible and to control heat extraction independently of heat input, a shield can be raised between a heating element and a crucible at a controlled...
8177911 Damage evaluation method of compound semiconductor member, production method of compound semiconductor member, gallium nitride compound semiconductor member and gallium nitride compound semiconductor membrane  
A method of evaluating damage of a compound semiconductor member, comprising: a step of performing measurement of photoluminescence on a surface of the compound semiconductor member; and a step of...
8172945 High-purity vitreous silica crucible for pulling large-diameter single-crystal silicon ingot  
A high-purity vitreous silica crucible used for pulling a large-diameter single-crystal silicon ingot, includes a double layered structure constituted by an outer layer composed of high-purity...
8172941 Method and device for producing semiconductor wafers of silicon  
Semiconductor wafers of silicon are produced by pulling a single crystal from a melt contained in a crucible and slicing semiconductor wafers from the pulled single crystal, heat being delivered to...
8172943 Single Crystal manufacturing method  
Single crystalline ingots can be stably pulled free from dislocation and with a good crystal shape by actuating a crystal driving unit so as to immerse a seed crystal in a silicon melt, and...
8172944 Device for producing a block of crystalline material with modulation of the thermal conductivity  
The device for producing a block of crystalline material from a bath of molten material comprises a crucible having a bottom and heat extraction means arranged under the crucible. It also comprises...
8172942 Arc discharge apparatus, apparatus and method for manufacturing vitreous silica glass crucible, and method for pulling up silicon single crystal  
The arc discharge apparatus comprises a plurality of carbon electrodes connected to respective phases of a power supply for heating a silica powder and causing it to fuse by generating arc...
8168000 III-nitride semiconductor device fabrication  
A method of fabricating a III-nitride power semiconductor device which includes selective prevention of the growth of III-nitride semiconductor bodies to selected areas on a substrate in order to...
8163444 Mask for crystallizing a semiconductor layer and method of crystallizing a semiconductor layer using the same  
A mask for crystallizing a semiconductor layer includes a plurality of first main-slit portions, a plurality of second main-slit portions, upper slit portion and lower slit portion. The first...
8164100 Semiconductor device and method of manufacturing thereof  
A semiconductor device is provided in which the contact resistance of the interface between an electrode and the semiconductor substrate is reduced. The semiconductor device includes a 4H polytype...
8163086 Halogen assisted physical vapor transport method for silicon carbide growth  
A physical vapor transport growth technique for silicon carbide is disclosed. The method includes the steps of introducing a silicon carbide powder and a silicon carbide seed crystal into a...
8163403 Epitaxial layers on oxidation-sensitive substrates and method of producing same  
This invention disclosure describes methods for the fabrication of metal oxide films on surfaces by topotactic anion exchange, and laminate structures enabled by the method. A precursor...
8163084 Nanostructure and manufacturing method for same  
The invention relates to nanostructure and its manufacturing method. In the manufacturing method of a nanostructure, first anisotropic crystalline particles, connectors having end to be connected...
8163083 Silica glass crucible and method for pulling up silicon single crystal using the same  
A silica glass crucible causing fewer pinholes in silicon single crystals is provided by a method of preventing pinholes by performing the pulling up of a silicon single crystal while restraining...
8163085 Method and apparatus for forming protective layer  
An apparatus for forming a protective layer of magnesium oxide on a front glass substrate (11) in an evaporation chamber (201) includes the following: oxygen outlet openings (222) for introducing...
8163573 Method for manufacturing nitride semiconductor element  
InyGa1-yN (0
8159037 Stack structure comprising epitaxial graphene, method of forming the stack structure, and electronic device comprising the stack structure  
Provided are a stack structure including an epitaxial graphene, a method of forming the stack structure, and an electronic device including the stack structure. The stack structure includes: a Si...
8157914 Substrate surface modifications for compositional gradation of crystalline materials and associated products  
A compositionally graded material having low defect densities and improved electronic properties is disclosed and described. A compositionally graded inorganic crystalline material can be formed by...
8157912 Method of converting PCA to sapphire and converted article  
Polycrystalline alumina (PCA) that has been doped with magnesium oxide is converted to sapphire by additionally doping the PCA with boron oxide and sintering to induce abnormal grain growth. The...
8157913 Method of forming a sapphire single crystal  
Various single crystals are disclosed including sapphire. The single crystals have desirable geometric properties, including a width not less than about 15 cm and the thickness is not less than...
8152921 Crystal manufacturing  
An implementation of a Czochralski-type crystal growth has been shown and embodied. More particularly, a furnace with suitable insulation and flow arrangement is shown to improve the...
8152920 Crucible for the crystallization of silicon  
A crucible and method for the crystallization of silicon utilize release coatings. The crucible is used in the handling of molten materials that are solidified in the crucible and then removed as...
8152918 Methods for epitaxial silicon growth  
Methods of cleaning substrates and growing epitaxial silicon thereon are provided. Wafers are exposed to a plasma for a sufficient time prior to epitaxial silicon growth, in order to clean the...
8152919 Epitaxial silicon wafer and fabrication method thereof  
An epitaxial silicon wafer is provided in which an epitaxial layer is grown on a silicon wafer having a plane inclined from a {110} plane of a silicon single crystal as a main surface. In the...
8147611 Method of manufacturing single crystal  
A method of manufacturing a single crystal based on a Czochralski method of applying a horizontal magnetic field, wherein the single crystal is pulled in such a manner that a radial magnetic field...
8147991 One hundred millimeter single crystal silicon carbide wafer  
A method is disclosed for producing a high quality bulk single crystal of silicon carbide in a seeded growth system by reducing the separation between a silicon carbide seed crystal and a seed...