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8388752 Method of manufacturing a silicon carbide single crystal  
A method capable of stably manufacturing a SiC single crystal in the form of a thin film or a bulk crystal having a low carrier density of at most 5×1017/cm3 and preferably less than 1×1017/cm3...
8388751 Controlling transport of gas borne contaminants across a ribbon surface  
A method of growing a ribbon crystal provides a crucible containing molten material and passes string through the molten material to grow the ribbon crystal. The method further directs gas flow...
8387413 Method for producing a component with a layer of transparent quartz glass  
In a known method for producing a component with a layer of transparent quartz glass, comprising: applying particles of synthetically produced quartz glass to a base body made of quartz glass and...
8382899 Method and mould for casting articles with a pre-determined crystalline orientation  
Previously a number of techniques have been used in order to form single crystal or pre-determined crystallography components and articles. Each one of these techniques has its own particular...
8382894 Process for the preparation of silicon wafer with reduced slip and warpage  
Silicon wafers wherein slip dislocations and warpages during device production are suppressed, contain BMDs with an octahedral shape, and of BMDs at a depth greater than 50 μm from the surface of...
8382898 Methods for high volume manufacture of group III-V semiconductor materials  
The present invention is related to the field of semiconductor processing equipment and methods and provides, in particular, methods for the sustained, high-volume production of Group III-V...
8384090 Low 1C screw dislocation 3 inch silicon carbide wafer  
A high quality single crystal wafer of SiC is disclosed having a diameter of at least about 3 inches and a 1c screw dislocation density of less than about 2000 cm−2.
8382895 Silicon single crystal manufacturing method, silicon single crystal, silicon wafer, apparatus for controlling manufacture of silicon single crystal, and program  
A method of manufacturing a silicon monocrystal by FZ method, wherein a P-type or N-type silicon crystal having been pulled up by CZ method is used as a raw material. While impurities whose...
8382897 Process gas delivery for semiconductor process chambers  
Methods for gas delivery to a process chamber are provided herein. In some embodiments, a method may include flowing a process gas through one or more gas conduits, each gas conduit having an...
8382896 High throughput screening of crystallization materials  
High throughput screening of crystallization of a target material is accomplished by simultaneously introducing a solution of the target material into a plurality of chambers of a microfabricated...
8383494 Method for forming buffer layer for GaN single crystal  
Disclosed is a method for forming a buffer layer for growing gallium nitride single crystals on a sapphire substrate using hydride vapor phase epitaxy (HVPE), wherein the buffer layer is formed in...
8377806 Method for controlled growth of silicon carbide and structures produced by same  
A method for controlled growth of silicon carbide and structures produced by the method are disclosed. A crystal of silicon carbide (SiC) can be grown by placing a sacrificial substrate in a...
8377203 Oxide single crystal and method for production thereof, and single crystal wafer  
An oxide single crystal having a composition represented by RExSi6O1.5x+12 (RE: La, Ce, Pr, Nd, or Sm, x: 8 to 10) is grown by using the Czochralski method such that the crystal growth orientation...
8377205 Apparatus for producing silicon nanocrystals using inductively coupled plasma  
The present disclosure relates to an apparatus for producing silicon nanocrystals, which can minimize plasma diffusion by finely adjusting a plasma region created by an ICP coil. The apparatus...
8377204 Group III nitride single crystal and method of its growth  
Affords methods of growing III nitride single crystals of favorable crystallinity with excellent reproducibility, and the III nitride crystals obtained by the growth methods. One method grows a...
8377202 Method for manufacturing silicon wafer and silicon wafer manufactured by this method  
A method for manufacturing a silicon wafer having a defect-free region in a surface layer, in which at least only a surface layer region to a predetermined depth from a front surface of a silicon...
8372198 Methods of forming dual damascene structures  
A dual damascene structure and a method of forming a dual damascene structure are disclosed. The dual damascene structure includes an insulation member, a single crystal member and a filling...
8372372 Clean bench and method of producing raw material for single crystal silicon  
A clean bench comprising a worktable on which polycrystalline silicon is placed, a box part which includes side plates to surround three sides except a front face of a working space above the...
8372197 Substrate temperature accuracy and temperature control flexibility in a molecular beam epitaxy system  
A control system and method for controlling temperatures while performing a MBE deposition process, wherein the control system comprises a MBE growth structure; a heater adapted to provide heat...
8372196 Susceptor device, manufacturing apparatus of epitaxial wafer, and manufacturing method of epitaxial wafer  
In a manufacturing apparatus for manufacturing an epitaxial wafer with a wafer being mounted substantially concentrically with a susceptor, a center rod is provided to extend in an up-and-down...
8372199 Bulk GaN and AlGaN single crystals  
Bulk GaN and AlGaN single crystal boules, preferably fabricated using a modified HVPE process, are provided. The single crystal boules typically have a volume in excess of 4 cubic centimeters with...
8366826 Methods for preparing silicon germanium alloy nanocrystals  
The present invention relates to a method of preparing silicon germanium alloy nanocrystals by the simultaneous thermal disproportionation of a siliceous material and GeX2 in a conventional tube...
8366892 Graphite electrode  
The present invention relates to an electrode composed of carbon having at least two different zones, wherein an outer zone (A) forms the base of the electrode and carries one or more inner zones,...
8368179 Miscut semipolar optoelectronic device  
A method for improved growth of a semipolar (Al,In,Ga,B)N semiconductor thin film using an intentionally miscut substrate. Specifically, the method comprises intentionally miscutting a substrate,...
8367550 Fabricating low contact resistance conductive layer in semiconductor device  
A conductive layer may be fabricated on a semiconductor substrate by loading a silicon substrate in to a chamber whose inside temperature is at a loading temperature in the range of approximately...
8367301 Mask for crystallizing silicon, apparatus having the mask and method of crystallizing with the mask  
A mask for crystallizing silicon includes a first, a second, and a third pattern part arranged in a longitudinal direction, each of the first, second, and third pattern parts including a plurality...
8361227 Silicon carbide single crystals with low boron content  
In a crystal growth method, an enclosed growth crucible is provided inside of a growth chamber. The growth crucible has polycrystalline source material and a seed crystal disposed in spaced...
8361228 Crucible having a doped upper wall portion and method for making the same  
A fused glass crucible includes a collar of doped aluminum silica that defines uppermost and outermost surfaces of the crucible. The melt line that defines the surface of molten silicon in the...
8361225 Low etch pit density (EPD) semi-insulating III-V wafers  
Systems and methods of manufacturing wafers are disclosed using a low EPD crystal growth process and a wafer annealing process are provided resulting in III-V/GaAs wafers that provide higher...
8361222 Method for producing group III nitride-based compound semiconductor  
In the production of GaN through the flux method, deposition of miscellaneous crystals on the nitrogen-face of a GaN self-standing substrate and waste of raw materials are prevented. Four...
8361223 Method for measuring liquid level in single crystal pulling apparatus employing CZ method  
Provided is a method for reliably and easily measuring a liquid level by selecting an optimal reflection method from among a plurality of reflection methods, depending on growing conditions of a...
8361226 III-nitride single-crystal growth method  
This III-nitride single-crystal growth method, being a method of growing a AlxGa1-xN single crystal (4) by sublimation, is furnished with a step of placing source material (1) in a crucible (12),...
8361224 Colloidal photonic crystals using colloidal nanoparticles and method for preparation thereof  
The present invention relates to colloidal photonic crystals using colloidal nanoparticles and a method for the preparation thereof, wherein by adding a viscoelastic material into a solution...
8361550 Method for forming SrTiO3 film and storage medium  
A substrate is arranged in a processing chamber, the substrate is heated, a Ti material is introduced into the processing chamber in the form of gas, the Ti material is oxidized by introducing an...
8361551 Methods forming high dielectric target layer  
In a method of forming a target layer having a uniform composition of constituent materials, a first precursor including a first central atom and a ligand is chemisorbed on a first reaction site...
8357308 Ion etching of growing InP nanocrystals using microwave  
High quantum yield InP nanocrystals are used in the bio-technology, bio-medical, and photovoltaic, specifically IV, III-V and III-VI nanocrystal technological applications. InP nanocrystals...
8357242 Crystalline film devices, apparatuses for and methods of fabrication  
Methods of depositing thin film materials having crystalline content are provided. The methods use plasma enhanced chemical vapor deposition. According to one embodiment of the present invention,...
8357309 Class of ferromagnetic semiconductors  
Single crystal and polycrystal oxoruthenates having the generalized compositions (Baz,Sr1−z)FexCoyRu6−(x+y)O11 (1≦(x+y)≦5; 0≦z≦1) and (Ba,Sr)M2±xRu4∓xO11 (M=Fe,Co) belong to a novel class of...
8357241 Method of organic material vacuum evaporation and apparatus thereof  
There is provided a method of vacuum evaporation comprising causing evaporated material (5) from vacuum evaporation source (20) furnished with container (1) with its one side open accommodating...
8357243 Method for testing group III-nitride wafers and group III-nitride wafers with test data  
The present invention discloses a new testing method of group III-nitride wafers. By utilizing the ammonothermal method, GaN or other Group III-nitride wafers can be obtained by slicing the bulk...
8354618 Load chamber with dual heaters  
A disk processing system with a load chamber having a stationary heater and a movable heater.
8353985 Process for producing colloidal crystals immobilized with a polymer and colloidal crystals immobilized with a polymer  
A process for producing colloidal crystals immobilized with a polymer, comprising the steps of: preparing a monomer-dispersion in which colloidal crystals having a three-dimensionally ordered...
8349074 Method for detecting diameter of single crystal, single-crystal manufacturing method by using the same and single-crystal manufacturing apparatus  
A method for detecting a diameter of a single crystal at the time of pulling the single crystal from a silicon melt contained in a crucible according to the Czochralski method, the method...
8349075 2-dimensional line-defects controlled silicon ingot, wafer and epitaxial wafer, and manufacturing process and apparatus therefor  
The present invention reports a defect that has not been reported, and discloses a defect-controlled silicon ingot, a defect-controlled wafer, and a process and apparatus for manufacturing the...
8349077 Large aluminum nitride crystals with reduced defects and methods of making them  
Reducing the microvoid (MV) density in AlN ameliorates numerous problems related to cracking during crystal growth, etch pit generation during the polishing, reduction of the optical transparency...
8351660 Apparatus and method for detecting specific object pattern from image  
A face area is detected from an image captured by an image pickup device, pixel values of the image are adjusted based on information concerning the detected face area, a person area is detected...
8349078 Method of forming nitride semiconductor epitaxial layer and method of manufacturing nitride semiconductor device  
The present method of forming a nitride semiconductor epitaxial layer includes the steps of growing at least one layer of nitride semiconductor epitaxial layer on a nitride semiconductor substrate...
8349079 Apparatus for manufacturing group III nitride semiconductor  
An apparatus for manufacturing a Group III nitride semiconductor is composed of a pressure vessel, a reaction vessel disposed within the pressure vessel, a heating device disposed within the...
8349076 Method of fabricating GaN substrate  
A method of fabricating a freestanding gallium nitride (GaN) substrate includes: preparing a GaN substrate within a reactor; supplying HCl and NH3 gases into the reactor to treat the surface of...
8349742 Gallium nitride-based semiconductor device and method for manufacturing the same  
A gallium nitride-based semiconductor device includes a composite substrate and a gallium nitride layer. The composite substrate includes a silicon substrate and a filler. The silicon substrate...