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8242420 Directional solidification of silicon by electric induction susceptor heating in a controlled environment  
An apparatus and process are provided for directional solidification of silicon by electric induction susceptor heating in a controlled environment. A susceptor vessel is positioned between upper...
8241423 Silicon single crystal substrate and manufacture thereof  
A semiconductor wafer for an epitaxial growth is disclosed comprising: a main face on which a vapor phase epitaxial layer grows; a back face provided on an opposite side of the wafer; a main...
8241421 Epitaxial wafer and production method thereof  
The epitaxial layer defects generated from voids of a silicon substrate wafer containing added hydrogen are suppressed by a method for producing an epitaxial wafer by: growing a silicon crystal by...
8236103 Group III nitride semiconductor crystal, production method thereof and group III nitride semiconductor epitaxial wafer  
A method for producing a Group III nitride semiconductor crystal includes a first step of supplying a Group III raw material and a Group V raw material at a V/III ratio of 0 to 1,000 to form and...
8236104 Single-crystal manufacturing apparatus and single-crystal manufacturing method  
A single-crystal manufacturing apparatus comprising at least: a main chamber configured to accommodate a crucible; a pulling chamber continuously provided above the main chamber, the pulling...
8236102 Hydrothermal methods of fabricating trivalent-metal-ion-doped sapphire crystals  
A method of hydrothermally synthesizing sapphire single crystals doped with trivalent metal ions in a crystal-growth autoclave including a crystal-growth zone and nutrient-dissolution zone in fluid...
8236267 High-pressure vessel for growing group III nitride crystals and method of growing group III nitride crystals using high-pressure vessel and group III nitride crystal  
The present invention discloses a high-pressure vessel of large size formed with a limited size of e.g. Ni—Cr based precipitation hardenable superalloy. The vessel may have multiple zones. For i...
8232114 RTP spike annealing for semiconductor substrate dopant activation  
A semiconductor substrate has a plurality of active device patterns. At least some of the active device patterns comprise doped regions. The substrate has a plurality of surface regions, including...
8231729 Apparatus for producing nitride single crystal  
It is disclosed an apparatus for growing a nitride single crystal using a flux containing an easily oxidizable substance. The apparatus has a crucible for storing the flux; a pressure vessel for...
8231727 Crystal growth apparatus and method  
Systems and methods are disclosed for crystal growth using VGF and VB growth processes to reduce body lineage. In one exemplary embodiment, there is provided a method of inserting an ampoule with...
8231724 Reactor for polycrystalline silicon and polycrystalline silicon production method  
The reactor for polycrystalline silicon is a reactor for polycrystalline silicon in which a silicon seed rod installed inside the reactor is heated by supplying electricity, a raw material gas...
8231728 Epitaxial growth process  
An epitaxial growth method forming a semiconductor thin film including a heterojunction of a group III-V compound semiconductor by means of molecular beam epitaxy. The method is configured to...
8231725 Semiconductor wafers of silicon and method for their production  
Semiconductor wafers of silicon are produced by pulling a single crystal growing on a phase boundary from a melt contained in a crucible and cutting of semiconductor wafers therefrom, wherein...
8231726 Semiconductor light emitting element, group III nitride semiconductor substrate and method for manufacturing such group III nitride semiconductor substrate  
An object of the present invention is to obtain, with respect to a semiconductor light-emitting element using a group III nitride semiconductor substrate, a semiconductor light-emitting element...
8226767 Hybrid bandgap engineering for super-hetero-epitaxial semiconductor materials, and products thereof  
“Super-hetero-epitaxial” combinations comprise epitaxial growth of one material on a different material with different crystal structure. Compatible crystal structures may be identified using a “Tr...
8226768 Apparatus for evaporation, a crucible for evaporation and a method of growing a film on a substrate  
The present invention relates to an apparatus for evaporation comprising a vacuum chamber, a substrate stage defining a substrate plane and at least one effusion cell, the effusion cell comprising...
8227327 Method for epitaxial growth  
There is provided a method for epitaxial growth, wherein a quantum dot is formed on an epitaxial layer using a quantum-dot forming material with an excellent lattice matching property, and the...
8221549 Silicon carbide single crystal wafer and producing method thereof  
A silicon carbide single crystal wafer wherein a substrate is cut out at an OFF angle from a (0001) c plane of an α-type silicon carbide single crystal of less than 2° and in an OFF direction in w...
8221550 Process and apparatus for producing a single crystal of semiconductor material  
A process for producing a single crystal of semiconductor material, in which fractions of a melt, are kept in liquid form by a pulling coil, solidify on a seed crystal to form the growing single...
8221111 Mold, method of forming the same, and method of producing polycrystalline silicon substrate using the mold  
Disclosed is a mold wherein one bottom surface member (2) and four lateral surface members (3) are assembled. The sides of each lateral surface member (3) are respectively provided with a...
8221546 Epitaxial growth on low degree off-axis SiC substrates and semiconductor devices made thereby  
A method of epitaxially growing a SiC layer on a single crystal SiC substrate is described. The method includes heating a single-crystal SiC substrate to a first temperature of at least 1400° C. ...
8221545 Procedure for in-situ determination of thermal gradients at the crystal growth front  
A method and apparatus for growing a semiconductor crystal include pulling the semiconductor crystal from melt at a pull speed and modulating the pull speed by combining a periodic pull speed with...
8221544 Line scan sequential lateral solidification of thin films  
A polycrystalline film is prepared by (a) providing a substrate having a thin film disposed thereon, said film capable of laser-induced melting, (b) generating a sequence of laser pulses having a...
8221548 Diamond semiconductor element and process for producing the same  
A process for producing a diamond thin-film includes forming a diamond crystal thin-film on a substrate and firing the diamond crystal thin-film at a sufficient temperature under high pressure...
8221547 Nitride semiconductor substrate and method for forming the same  
An initial substrate structure for forming a nitride semiconductor substrate is provided. The initial substrate structure includes a substrate, a patterned epitaxial layer, and a mask layer. The...
8216373 Device and process for producing a block of crystalline material  
A temperature gradient is established in a crystallization crucible by means of a heat source and a cooling system. The cooling system comprises a heat exchanger and an adjustable additional heat...
8216537 Silicon-germanium hydrides and methods for making and using same  
The present invention provides novel silicon-germanium hydride compounds, methods for their synthesis, methods for their deposition, and semiconductor structures made using the novel compounds.
8216371 Single crystal manufacturing apparatus and method  
A Czochralski single crystal manufacturing apparatus uses multiple heaters to improve the controllability of crystal diameter. The power supplied to the multiple heaters is controlled so as to...
8216366 Method for manufacturing a cubic silicon carbide single crystal thin film and semiconductor device based on the cubic silicon carbide single crystal thin film  
A cubic silicon carbide single crystal thin film is manufactured by a method. A sacrificial layer is formed on a surface of a substrate. A cubic semiconductor layer is formed on the sacrificial...
8216363 Continuous antisolvent crystallization process and system using plug flow reactors  
A process and system for continuous crystallization of a compound using antisolvent addition in which a solution is prepared with an organic compound and a solvent. An antisolvent is added to the...
8216369 System for forming SiC crystals having spatially uniform doping impurities  
A physical vapor transport system includes a growth chamber charged with source material and a seed crystal in spaced relation, and at least one capsule having at least one capillary extending...
8216370 Method for reducing defect concentration in crystals  
A method for removing defects at high pressure and high temperature (HP/HT) or for relieving strain in a non-diamond crystal commences by providing a crystal, which contains defects, and a pressure...
8216367 Method for production of silicon carbide layer, gallium nitride semiconductor device and silicon substrate  
A method for producing a silicon carbide layer on a surface of a silicon substrate includes the step of irradiating the surface of the silicon substrate heated in a high vacuum at a temperature in...
8216362 Controlling agglomerated point defect and oxygen cluster formation induced by the lateral surface of a silicon single crystal during CZ growth  
Processes for preparing a single crystal silicon ingot are disclosed. In certain embodiments, the processes involve controlling (1) a growth velocity, v, of the ingot as well as (2) an average...
8216361 Monocrystalline semiconductor wafer comprising defect-reduced regions and method for producing it  
Monocrystalline semiconductor wafers have defect-reduced regions, the defect-reduced regions having a density of GOI-relevant defects within the range of 0/cm2 to 0.1/cm2 and occupy overall an...
8216372 Apparatus for growing high quality silicon single crystal ingot and growing method using the same  
The invention relates to an apparatus and method for growing a high quality Si single crystal ingot and a Si single crystal ingot and wafer produced thereby. The growth apparatus controls the...
8216368 Method of fabricating an epitaxially grown layer  
A method of forming an epitaxially grown layer, preferably by providing a region of weakness in a support substrate and transferring a nucleation portion to the support substrate by bonding. A...
8216365 Method for producing a semiconductor crystal  
Objects of the invention are to further enhance crystallinity and crystallinity uniformity of a semiconductor crystal produced through the flux method, and to effectively enhance the production...
8216364 System and method for low-power nanotube growth using direct resistive heating  
Direct resistive heating is used to grow nanotubes out of carbon and other materials. A growth-initiated array of nanotubes is provided using a CVD or ion implantation process. These processes use...
8210906 Slicing method and method for manufacturing epitaxial wafer  
A wafer slicing method includes winding a wire around rollers and pressing the wire against an ingot while supplying slurry to the rollers. A previously conducted experiment provides a supply...
8212254 Thin film transistor, manufacturing method thereof, and semiconductor device  
By a laser crystallization method, a crystalline semiconductor film in which grain boundaries are all in one direction is provided as well as a manufacturing method thereof. In crystallizing a...
8211228 Method for producing single crystal and a method for producing annealed wafer  
The present invention is a method for producing a single crystal that is a multi-pulling method for pulling a plurality of single crystals from a raw material melt in a same crucible in a chamber...
8206505 Method for forming nano-dimensional clusters and setting ordered structures therefrom  
The inventive method for forming nano-dimensional clusters consists in introducing a solution containing a cluster-forming material into nano-pores of natural or artificial origin contained in a...
8202788 Method for fabricating GaNAsSb semiconductor  
Disclosed is a method for fabrication of a semiconductor of gallium nitride arsenide antimonide (GaNAsSb) on a substrate wherein the fabrication is performed at a fabrication temperature followed...
8201947 Wavelength converter and green light source and projection apparatus using the same  
A wavelength converter includes a supporting substrate and a ferroelectric substrate, the ferroelectric substrate includes at least one waveguide facing the supporting substrate and at least one...
8202365 Process for producing oriented inorganic crystalline film, and semiconductor device using the oriented inorganic crystalline film  
In a process for producing an oriented inorganic crystalline film, a non-monocrystalline film containing inorganic crystalline particles is formed on a substrate by a liquid phase technique using a...
8202364 Method for solid-state single crystal growth  
By controlling the average size of matrix grains of polycrystalline bodies to more than a critical size at which an abnormal, exaggerated or discontinuous grain growth ends, and less than twice the...
8202728 Substrates useful for cell culture and methods for making and using same  
Described herein are substrates coated with crystals having uniform crystalline morphology on the surface of the substrate. The coated substrates are useful in culturing and performing functional...
8197781 Sputtering target of Li3PO4 and method for producing same  
A method of forming a lithium orthophosphate sputter target or tile and resulting target material is presented. The target is fabricated from a pure lithium orthophosphate powder refined to a fine...
8197595 Method and device for producing thin silicon rods  
A method for producing thin silicon rods using a floating zone crystallization process includes supplying high frequency (HF) current to a flat induction coil having a central opening, a plurality...