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7879150 |
Silicon carbide manufacturing device and method of manufacturing silicon carbide
A silicon carbide manufacturing device includes a graphite crucible, in which a seed crystal is disposed, a gas-inducing pipe coupled with the graphite crucible, and an attachment prevention...
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7879161 |
Strong, non-magnetic, cube textured alloy substrates
A warm-rolled, annealed, polycrystalline, cube-textured, {100}<100>, FCC-based alloy substrate is characterized by a yield strength greater than 200 MPa and a biaxial texture characterized by a...
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7875116 |
Silicon single crystal producing method, annealed wafer, and method of producing annealed wafer
A method in which SSDs are reliably reduced while reducing void defects other than the SSDs on a wafer surface, which is essential for an annealed wafer, and ensuring that BMDs serving as gettering...
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7875115 |
Epitaxial wafer and method for producing epitaxial wafers
This disclosure is aimed at providing a method for producing an epitaxial wafer allowing uniform occurrence of oxygen precipitate in a substrate plane in the radial direction in a base plate and...
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7875118 |
Crystallization method and crystallization apparatus
A crystallization method includes the steps of melting a crystallized material in a crucible by heating, and growing a crystal by cooling and coagulating the melted material, wherein said melting...
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7875117 |
Nitrogen doped silicon wafer and manufacturing method thereof
An epitaxial wafer and a high-temperature heat treatment wafer having an excellent gettering capability are obtained by performing epitaxial growth or a high-temperature heat treatment. A...
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7875957 |
Semiconductor substrate for epitaxial growth and manufacturing method thereof
Provided is a semiconductor substrate for epitaxial growth which does not require any etching treatment as a pretreatment in the stage of performing an epitaxial growth of HgCdTe film. A CdTe...
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7875790 |
Method of preparing a thermoelectric material, method of forming a thermoelectric device, and method of fabricating a thermoelectric module
A method of preparing a thermoelectric material includes the following steps. A thermoelectric raw material can be filled into a cavity of a first mold so that the thermoelectric raw material...
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7874210 |
Ultrasonic sensor assembly and method
An ultrasonic point level measurement instrument comprises a measurement circuit and a transducer. The transducer transmits and receives acoustic signals under control of the measurement circuit....
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7875536 |
Nanostructures formed of branched nanowhiskers and methods of producing the same
A method of forming a nanostructure having the form of a tree, comprises a first stage and a second stage. The first stage includes providing one or more catalytic particles on a substrate surface,...
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7871469 |
Method for fabricating waveguides
A method of forming a planar waveguide structure, comprising forming a first graded layer on a substrate, wherein the first graded layer comprises a first and a second optical material, wherein the...
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7871590 |
Mass of silicon solidified from molten state and process for producing the same
A solidified mass for a high-purity multicrystal silicon material that is preferably applicable to producing crystal type silicon ingots for photo voltaics, and a process for producing the...
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7867466 |
Thermally conductive, electrically insulating material and production method thereof
Means for a thermally conductive and electrically insulating material 1 containing an AlN crystal 150 mainly comprising AlN, and a production method thereof. In production, a molten aluminum layer...
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7867334 |
Silicon casting apparatus and method of producing silicon ingot
A silicon casting apparatus for producing polycrystal silicon ingot by heating a silicon melt (8) held in a mold (4) from above by a heater (3) and cooling it from below while changing the heat...
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7867926 |
Substrate processing apparatus and method
A substrate processing apparatus is used for radiating UV rays onto a target film formed on a target surface of a substrate to perform a curing process of the target film. The apparatus includes a...
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7867335 |
GaN bulk growth by Ga vapor transport
GaN is grown by creating a Ga vapor from a powder, and using an inert purge gas from a source to transport the vapor to a growth site where the GaN growth takes place. In one embodiment, the inert...
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7863517 |
Electric power generator based on photon-phonon interactions in a photonic crystal
A solar power plant (10) capable of generating electricity comprising a light pipe carrying highly concentrated solar light (19), a hot reservoir (24), a cold reservoir (20), and a plurality of...
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7862656 |
Apparatus and method for growing a crystal and heating an annular channel circumscribing the crystal
An apparatus and method is provided for pulling a crystal seed from melt for growing a single crystal. The method includes the steps of providing a crucible and providing within the crucible an...
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7862657 |
Crystal growth method and apparatus
A crystal growth method for forming a semiconductor film, the method includes: while revolving one or more substrates about a rotation axis, passing raw material gas and carrier gas from the...
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7860597 |
Atomic layer deposition apparatus
A method and apparatus for atomic layer deposition (ALD) is described. The apparatus comprises a deposition chamber and a wafer support. The deposition chamber is divided into two or more...
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7857907 |
Methods of forming silicon nanocrystals by laser annealing
The present invention relates to a method for forming a layered structure with silicon nanocrystals. In one embodiment, the method comprises the steps of: (i) forming a first conductive layer on a...
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7858536 |
Semiconductor device and method for manufacturing semiconductor device
A semiconductor device comprising a semiconductor substrate, a gate dielectrics formed on the semiconductor substrate and including a silicon oxide film containing a metallic element, the silicon...
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7858144 |
Process for depositing organic materials
A process of making an organic thin film on a substrate by atomic layer deposition is disclosed, the process comprising simultaneously directing a series of gas flows along substantially parallel...
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7858959 |
Electronic element including ferroelectric substance film and method of manufacturing the same
A laminated film structure, method of manufacturing, and a preferable electronic element using the structure. The effective polarization into the electric field can be realized in the direction of...
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7858181 |
Growth of single crystal nanowires
The present invention provides nanowires which are substantially straight and substantially free of nanoparticles and methods for making the same The nanowires can be made by seeded approaches,...
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7854804 |
Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the same
A nitride crystal is characterized in that, in connection with plane spacing of arbitrary specific parallel crystal lattice planes of the nitride crystal obtained from X-ray diffraction measurement...
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7850777 |
Method of preparing semiconductor nanocrystal compositions
A semiconductor nanocrystal composition comprising a Group V to VI semiconductor material and a method of making same. The method includes synthesizing a semiconductor nanocrystal core, where the...
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7846499 |
Method of pulsing vapor precursors in an ALD reactor
A method of growing a thin film on a substrate by pulsing vapor-phase precursors material into a reaction chamber according to the ALD method. The method comprises vaporizing at least one precursor...
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7846491 |
Surface reconstruction method for silicon carbide substrate
A surface reconstruction method for a silicon carbide substrate includes a silicon film forming step of forming a silicon film on a surface of the silicon carbide substrate and a heat treatment...
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7846253 |
Silicon semiconductor substrate and production method thereof
The present invention can provide a silicon semiconductor substrate used for and epitaxial wafer, in which uniform and high-level gettering ability is obtained irrespective of slicing positions...
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7846252 |
Silicon wafer for IGBT and method for producing same
A silicon wafer for an IGBT is produced by forming an ingot having an interstitial oxygen concentration [Oi] of not more than 7.0×1017 atoms/cm3 by the Czochralski method; doping phosphorus in the ...
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7846764 |
Semiconductor film comprising discrete domains of an organic semiconductor and a method of its fabrication
According to a first aspect, the present invention provides a method for forming a semiconductor film comprising a first step of providing a solution comprising a first organic semiconductor and a...
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7842132 |
Optical element, light emitting device and method for producing optical element
The present invention relates to an optical element for converting light of prescribed wavelength emitted from a light source into light of wavelength different from the prescribed wavelength for...
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7842134 |
Diamond based substrate for electronic devices
The invention relates to a method of manufacture of a substrate for fabrication of semiconductor layers or devices, comprising the steps of providing a wafer of silicon including at least one first...
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7842133 |
Single crystal growing method
In a method of growing a single crystal by melting a raw material within a vessel under a nitrogenous and non-oxidizing atmosphere, the vessel is oscillated and the melted raw material is contacted...
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7837791 |
Silicon single crystal wafer for particle monitor
A silicon single crystal wafer for a particle monitor is presented, which wafer has an extremely small amount in the surface density of light point defects and is capable of still maintaining a...
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7838121 |
Highly anisotropic ceramic thermal barrier coating materials and related composites
High temperature composites and thermal barrier coatings, and related methods, using anisotropic ceramic materials, such materials as can be modified to reduce substrate thermal mismatch.
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7838398 |
Epitaxially coated semiconductor wafer and device and method for producing an epitaxially coated semiconductor wafer
In a method for producing epitaxially coated semiconductor wafers, a multiplicity of prepared, front side-polished semiconductor wafers are successively coated individually with an epitaxial layer...
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7837789 |
***WITHDRAWN PATENT AS PER THE LATEST USPTO WITHDRAWN LIST***
Method of SiC single crystal growth and SiC single crystal
A method of epitaxial growth of a 4H—SiC single crystal enabling growth of an SiC single crystal with low defects and low impurities able to be used for a semiconductor material at a practical g...
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7837969 |
Method of making large-volume CaF2 single crystals for optical elements with an optic axis parallel to the (100)-or (110)-crystal axis and CaF2 single crystal made thereby
The method of making a single crystal, especially a CaF2 single crystal, includes tempering, in which the crystal is heated at <18 K/h to a temperature of 1000° C. to 1350° C. and held at this t...
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7837795 |
Low temperature load and bake
Methods are provided for low temperature, rapid baking to remove impurities from a semiconductor surface prior to in-situ deposition. Advantageously, a short, low temperature process consumes very...
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7837794 |
Vapor phase growth apparatus and vapor phase growth method
A vapor phase growth apparatus and a vapor phase growth method improve the uniformity of film formed are provided. The vapor phase growth apparatus includes a chamber, a rotatable holder having a...
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7837792 |
Method for manufacturing semiconductor device
In a method for manufacturing a crystalline silicon film by utilizing a metal element that accelerates the crystallization of silicon, an adverse influence of this metal element can be suppressed....
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7837793 |
Method of manufacturing diamond substrates
A tiled array of diamond plates, which is suitable for wafer scale processing, for example, in the manufacture of electronic or other device structures on the diamond plates. The diamond plates are...
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7837790 |
Formation and treatment of epitaxial layer containing silicon and carbon
Methods and apparatus for formation and treatment of epitaxial layers containing silicon and carbon are disclosed. Treatment of the epitaxial layer converts interstitial carbon to substitutional...
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7833348 |
Temperature control method of epitaxial growth apparatus
An object of the invention is to calibrate an upper pyrometer for indirectly measuring a substrate temperature at the time of epitaxial growth in a comparatively short time and with accuracy to...
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7833347 |
Process and apparatus for producing nitride single crystal
A nitride single crystal is produced using a growth solution containing an easily oxidizable material. A crucible for storing the growth solution, a pressure vessel for storing the crucible and...
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7833349 |
Phase shifter for laser annealing
An object of the present invention is to provide a phase shifter for laser annealing which is capable of effectively preventing the sticking of particles. A first layer and a third layer are made...
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7833346 |
Method and apparatus for manufacturing group III nitride crystals
There is provided a group III nitride crystal growth method capable of obtaining a material which is a GaN substrate of low defect density capable of being used as a power semiconductor substrate...
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7833345 |
Treatment of crystals in order to avoid light-induced modifications of the refractive index
A method for the treatment of a crystal, such as a lithium niobate crystal or lithium tantalate crystal, having nonlinear optical properties. The crystal comprises foreign atoms which bring about...
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