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8361550 Method for forming SrTiO3 film and storage medium  
A substrate is arranged in a processing chamber, the substrate is heated, a Ti material is introduced into the processing chamber in the form of gas, the Ti material is oxidized by introducing an...
8361551 Methods forming high dielectric target layer  
In a method of forming a target layer having a uniform composition of constituent materials, a first precursor including a first central atom and a ligand is chemisorbed on a first reaction site of...
8357308 Ion etching of growing InP nanocrystals using microwave  
High quantum yield InP nanocrystals are used in the bio-technology, bio-medical, and photovoltaic, specifically IV, III-V and III-VI nanocrystal technological applications. InP nanocrystals...
8357242 Crystalline film devices, apparatuses for and methods of fabrication  
Methods of depositing thin film materials having crystalline content are provided. The methods use plasma enhanced chemical vapor deposition. According to one embodiment of the present invention,...
8357309 Class of ferromagnetic semiconductors  
Single crystal and polycrystal oxoruthenates having the generalized compositions (Baz,Sr1−z)FexCoyRu6−(x+y)O11 (1≦(x+y)≦5; 0≦z≦1) and (Ba,Sr)M2±xRu4∓xO11 (M=Fe,Co) belong to a novel class of ferro...
8357241 Method of organic material vacuum evaporation and apparatus thereof  
There is provided a method of vacuum evaporation comprising causing evaporated material (5) from vacuum evaporation source (20) furnished with container (1) with its one side open accommodating...
8357243 Method for testing group III-nitride wafers and group III-nitride wafers with test data  
The present invention discloses a new testing method of group III-nitride wafers. By utilizing the ammonothermal method, GaN or other Group III-nitride wafers can be obtained by slicing the bulk...
8354618 Load chamber with dual heaters  
A disk processing system with a load chamber having a stationary heater and a movable heater.
8353985 Process for producing colloidal crystals immobilized with a polymer and colloidal crystals immobilized with a polymer  
A process for producing colloidal crystals immobilized with a polymer, comprising the steps of: preparing a monomer-dispersion in which colloidal crystals having a three-dimensionally ordered array...
8349074 Method for detecting diameter of single crystal, single-crystal manufacturing method by using the same and single-crystal manufacturing apparatus  
A method for detecting a diameter of a single crystal at the time of pulling the single crystal from a silicon melt contained in a crucible according to the Czochralski method, the method including...
8349075 2-dimensional line-defects controlled silicon ingot, wafer and epitaxial wafer, and manufacturing process and apparatus therefor  
The present invention reports a defect that has not been reported, and discloses a defect-controlled silicon ingot, a defect-controlled wafer, and a process and apparatus for manufacturing the...
8349077 Large aluminum nitride crystals with reduced defects and methods of making them  
Reducing the microvoid (MV) density in AlN ameliorates numerous problems related to cracking during crystal growth, etch pit generation during the polishing, reduction of the optical transparency...
8351660 Apparatus and method for detecting specific object pattern from image  
A face area is detected from an image captured by an image pickup device, pixel values of the image are adjusted based on information concerning the detected face area, a person area is detected...
8349078 Method of forming nitride semiconductor epitaxial layer and method of manufacturing nitride semiconductor device  
The present method of forming a nitride semiconductor epitaxial layer includes the steps of growing at least one layer of nitride semiconductor epitaxial layer on a nitride semiconductor substrate...
8349079 Apparatus for manufacturing group III nitride semiconductor  
An apparatus for manufacturing a Group III nitride semiconductor is composed of a pressure vessel, a reaction vessel disposed within the pressure vessel, a heating device disposed within the...
8349076 Method of fabricating GaN substrate  
A method of fabricating a freestanding gallium nitride (GaN) substrate includes: preparing a GaN substrate within a reactor; supplying HCl and NH3 gases into the reactor to treat the surface of the...
8349742 Gallium nitride-based semiconductor device and method for manufacturing the same  
A gallium nitride-based semiconductor device includes a composite substrate and a gallium nitride layer. The composite substrate includes a silicon substrate and a filler. The silicon substrate...
8349080 Micro-manipulator machine for harvesting and cryofreezing crystals  
A micro-manipulator machine for harvesting and cryofreezing crystals for cryogenic storage and subsequent analysis includes a micropositioner mechanism for converting motions manually input to a...
8343618 Silicon wafer and method of manufacturing the same  
A silicon wafer in which both occurrences of slip dislocation and warpage are suppressed in device manufacturing processes is a silicon wafer having BMDs having an octahedral shape, wherein BMDs...
8343276 High-temperature ionic state compound crystallization technology  
The present invention provides a high-temperature ionic state fluidized bed compound crystallization technology and an internal reactor structure thereof. The principle of the present invention is...
8343239 Group III nitride semiconductor manufacturing system  
The invention provides a group III nitride semiconductor manufacturing system which is free from interruption to rotation of a rotational shaft. The group III nitride semiconductor manufacturing...
8343854 Method of reducing memory effects in semiconductor epitaxy  
A method of reducing memory effects during an epitaxial growth process is provided in which a gas mixture comprising hydrogen gas and a halogen-containing gas is used to flush the CVD reaction...
8343275 Single crystal growth method and single crystal pulling apparatus for improving yield and productivity of single crystal  
The present invention resides in a silicon single crystal growth method of pulling up and growing a single crystal from a melt of a silicon raw material in a quartz crucible based on a Czochralski...
8337798 Crystal producing apparatus, crystal producing method, substrate producing method, gallium nitride crystal, and gallium nitride substrate  
A crystal producing apparatus includes a crystal forming unit and a crystal growing unit. The crystal forming unit forms a first gallium nitride (GaN) crystal by supplying nitride gas into melt...
8337616 Apparatus and method for producing single crystal  
A single-crystal manufacturing apparatus comprises a chamber, a crucible in the chamber, a heater arranged around the crucible, a lifting mechanism for lifting a seed crystal, and a guide passage...
8337615 Method for producing a monocrystalline Si wafer having an approximately polygonal cross-section and corresponding monocrystalline Si wafer  
A method of making a single-crystalline Si wafer with an approximately polygonal cross section and having a material property that is the same as a zone-pulled Si crystal, and the...
8337617 Manufacturing method and manufacturing apparatus of a group III nitride crystal  
A method for manufacturing a group III nitride crystal on a seed crystal in a holding vessel holding therein a melt containing a group III metal, an alkali metal and nitrogen. The manufacturing...
8337618 Silicon crystallization system and silicon crystallization method using laser  
A silicon crystallization system includes a vibration device for vibrating a linear laser beam along a longer-axis direction of the linear laser beam. A vibration frequency at which the laser beam...
8338273 Pulsed selective area lateral epitaxy for growth of III-nitride materials over non-polar and semi-polar substrates  
An epitaxy procedure for growing extremely low defect density non-polar and semi-polar III-nitride layers over a base layer, and the resulting structures, is generally described. In particular, a...
8337614 GaN single crystal substrate and method for processing surface of GaN single crystal substrate  
The surface of a gallium nitride single crystal substrate is processed, e.g., comprising steps by planarizing the top side and the bottom side of a gallium nitride original substrate positioned on...
8337945 Method for producing an element, including a multiplicity of nanocylinders on a substrate  
A method for producing an element including a substrate having a plurality of nanocylinders deposited thereon includes providing the substrate. The substrate is covered with a nanoporous Al2O3...
8334015 Vapor based combinatorial processing  
A combinatorial processing chamber and method are provided. In the method a fluid volume flows over a surface of a substrate with differing portions of the fluid volume having different constituent...
8334156 Nitride semiconductor single crystal substrate, and methods of fabricating the same and a vertical nitride semiconductor light emitting diode using the same  
A nitride semiconductor single crystal substrate, a manufacturing method thereof and a method for manufacturing a vertical nitride semiconductor device using the same. According to an aspect of the...
8333838 Method for producing fluoride crystal  
Provided is an apparatus capable of producing a fluoride crystal in a very short period of time, and a method suitable for producing a fluoride crystal using the apparatus. The apparatus comprises...
8334016 Vapor deposition of metal oxides, silicates and phosphates, and silicon dioxide  
Metal silicates or phosphates are deposited on a heated substrate by the reaction of vapors of alkoxysilanols or alkylphosphates along with reactive metal amides, alkyls or alkoxides. For example,...
8328933 Apparatus and semiconductor co-crystal  
The invention provides a method to enforce face-to-face stacking of organic semiconductors in the solid state that employs semiconductor co-crystal formers (SCCFs), to align semiconductor building...
8329295 Process for producing doped gallium arsenide substrate wafers having low optical absorption coefficient  
A process is disclosed for producing a doped gallium arsenide single crystal by melting a gallium arsenide starting material and subsequently solidifying the gallium arsenide melt, wherein the...
8328937 Seed crystal axis for solution growth of single crystal  
A seed crystal axis used in a solution growth of single crystal production system is provided to prevent formation of polycrystals and grow a single crystal with a high growth rate. The seed...
8328935 Method of manufacturing polycrystalline silicon rod  
The present invention is a method of manufacturing polycrystalline silicon rods, wherein silicon is deposited onto a silicon core wire by a chemical vapor deposition (CVD) method such that a...
8328932 Ribbon crystal pulling furnace afterheater with at least one opening  
A ribbon crystal pulling furnace has an interior for enclosing at least a portion of one or more ribbon crystals, and an afterheater positioned within the interior. The afterheater has at least one...
8328936 Producing a diamond semiconductor by implanting dopant using ion implantation  
A process of producing a diamond thin-film includes implanting dopant into a diamond by an ion implantation technique, forming a protective layer on at least part of the surface of the...
8328934 Crystal of GTP Cyclohydrolase Type IB  
This invention relates to a novel, bacterial GTP Cyclohydrolase Type IB enzyme, and the crystal structure thereof.
8329253 Method for forming a transparent conductive film by atomic layer deposition  
A method for forming a transparent conductive film by atomic layer deposition includes providing more than one kind of oxide precursor which is individually introduced into atomic layer deposition...
8323402 Method for growing aluminum nitride crystal, process for producing aluminum nitride crystal, and aluminum nitride crystal  
Methods of growing and manufacturing aluminum nitride crystal, and aluminum nitride crystal produced by the methods. Preventing sublimation of the starting substrate allows aluminum nitride crystal...
8323406 Defect reduction in seeded aluminum nitride crystal growth  
Bulk single crystal of aluminum nitride (AlN) having an a real planar defect density≦100 cm−2. Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet...
8323407 Gallium trichloride injection scheme  
The invention relates to a method and system for epitaxial deposition of a Group III-V semiconductor material that includes gallium. The method includes reacting an amount of a gaseous Group III...
8323403 SOI wafer and method for producing it  
An SOI wafer is constructed from a carrier wafer and a monocrystalline silicon layer having a thickness of less than 500 nm, an excess of interstitial silicon atoms prevailing in the entire volume...
8323404 Group III nitride crystal and manufacturing method thereof  
A group III nitride crystal containing therein an alkali metal element comprises a base body, a first group III nitride crystal formed such that at least a part thereof makes a contact with the...
8323405 Process and apparatus for growing a crystalline gallium-containing nitride using an azide mineralizer  
An apparatus and associated method for large-scale manufacturing of gallium nitride is provided. The apparatus comprises a large diameter autoclave and a raw material basket. Methods include...
8317920 Directional solidification furnace for reducing melt contamination and reducing wafer contamination  
A directional solidification furnace includes a crucible for holding molten silicon and a lid covering the crucible and forming an enclosure over the molten silicon. The crucible also includes an...