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8110041 Coloured diamond  
A method of producing a single crystal CVD diamond of a desired color which includes the steps of providing single crystal CVD diamond which is colored and heat treating the diamond under...
8110171 Method for decolorizing diamonds  
A method for changing the color of a diamond. The method comprises placing the diamond in a substrate holder in a chemical vapor deposition (CVD) equipment. The CVD equipment is maintained at...
8110042 Method for manufacturing single crystal  
Using a pulling-up apparatus, an oxygen concentration of the monocrystal at a predetermined position in a pulling-up direction is controlled based on a relationship in which the oxygen...
8105434 Si ribbon, SiO2 ribbon and ultra pure ribbons of other substances  
A method of purifying substances is described herein, particularly suitable for purifying silica and forming it into silicon oxide sheets or ribbons, or silicon sheets or ribbons. The method...
8105955 Integrated circuit system with carbon and non-carbon silicon  
An integrated circuit system includes a substrate, a carbon-containing silicon region over the substrate, a non-carbon-containing silicon region over the substrate, and a silicon-carbon region,...
8105436 Single crystal silicon wafer for insulated gate bipolar transistors and process for producing the same  
A single crystal silicon wafer for use in the production of insulated gate bipolar transistors is made of single crystal silicon grown by the Czochralski method and has a gate oxide with a film...
8105435 Beam homogenizer and laser irradiation apparatus and method of manufacturing semiconductor device  
The inhomogeneous energy distribution at the beam spot on the irradiated surface is caused by a structural problem and processing accuracy of the cylindrical lens array forming an optical system....
8101020 Crystal growth apparatus and manufacturing method of group III nitride crystal  
A crystal growth apparatus comprises a reaction vessel holding a melt mixture containing an alkali metal and a group III metal, a gas supplying apparatus supplying a nitrogen source gas to a vessel...
8101018 Method for fabricating a semiconductor device and apparatus for inspecting a semiconductor  
In a method for fabricating a semiconductor device and an apparatus for inspecting a semiconductor, laser processing is performed at different laser powers at different positions on a monitor...
8101021 Flow method and reactor for manufacturing nanocrystals  
A population of nanocrystals having a narrow and controllable size distribution and can be prepared by a segmented-flow method.
8101022 Crystal-growing furnace system with emergent pressure-release arrangement  
A crystal-growing furnace system with an emergent pressure-release arrangement includes an isolated chamber and a furnace upper body. The top board is provided with an opening and three first...
8101019 Method for producing a monocrystalline or polycrystalline semiconductor material  
In the method of making a monocrystalline or polycrystalline semiconductor material semiconductor raw material is introduced into a melting crucible and directionally solidified using a vertical...
8097081 High pressure apparatus and method for nitride crystal growth  
A high pressure apparatus and related methods for processing supercritical fluids. In a specific embodiment, the present apparatus includes a capsule, a heater, at least one ceramic ring but can be...
8097082 Nonplanar faceplate for a plasma processing chamber  
A method and apparatus for adjust local plasma density during a plasma process. One embodiment provides an electrode assembly comprising a conductive faceplate having a nonplanar surface. The...
8097524 Lightly doped silicon carbide wafer and use thereof in high power devices  
A method for manufacturing a silicon carbide single crystal. A silicon carbide single crystal is grown. The crystal has a boron concentration less than 5×1014 cm−3, and a concentration of tr...
8097080 Method of cutting single crystals  
A method of dividing single crystals, particularly of plates of parts thereof, is proposed, which can comprise: pre-adjusting the crystallographic cleavage plane (2′) relative to the cleavage d...
8092596 Bulk GaN and AlGaN single crystals  
Bulk GaN and AlGaN single crystal boules, preferably fabricated using a modified HVPE process, are provided. The single crystal boules typically have a volume in excess of 4 cubic centimeters with...
8092594 Carbon ribbon to be covered with a thin layer made of semiconductor material and method for depositing a layer of this type  
The present invention relates to a carbon ribbon for covering in a thin layer of semiconductor material, and to a method of deposited such a layer on a substrate constituted by a carbon ribbon. At...
8092597 Method and apparatus for fabricating crack-free Group III nitride semiconductor materials  
Method for producing a III-N (AlN, GaN, AlxGa(1-x)N) crystal by Vapor Phase Epitaxy (VPE), the method comprising: providing a reactor having: a growth zone for growing a III-N crystal; a substrate...
8092595 Self-assembly of water-soluble nanocrystals  
A method for forming an ordered array of nanocrystals where a hydrophobic precursor solution with a hydrophobic core material in an organic solvent is added to a solution of a surfactant in water,...
8088221 Method and system for diamond deposition using a liquid-solvent carbon-tranfser mechanism  
A system and method for growing diamond crystals from diamond crystal seeds by epitaxial deposition at low temperatures and atmospheric and comparatively low pressures. A solvent is circulated (by...
8088219 Monocrystalline semiconductor wafer comprising defect-reduced regions and method for producing it  
Monocrystalline semiconductor wafers have defect-reduced regions, the defect-reduced regions having a density of GOI-relevant defects within the range of 0/cm2 to 0.1/cm2 and occupy overall an...
8088222 Method, system, and apparatus for the growth of on-axis SiC and similar semiconductor materials  
A novel approach for the growth of high-quality on-axis epitaxial silicon carbide (SiC) films and boules, using the Chemical Vapor Deposition (CVD) technique, is described here. The method includes...
8088220 Deep-eutectic melt growth of nitride crystals  
In accordance with various embodiments, crystalline structures are formed by providing, at a growth temperature, a liquid comprising AlN and having a quality factor greater than approximately 0.14...
8084116 Surfaces physically transformable by environmental changes  
An apparatus includes a substrate having a top surface, a substantially regular array of raised structures located over the top surface, and a layer located on the top surface between the...
8085985 Method for determining distance between reference member and melt surface, method for controlling location of melt surface using the same, and apparatus for production silicon single crystal  
The present invention is a method for determining a relative distance between a reference member placed above a melt surface and the melt surface upon pulling a silicon single crystal out of a raw...
8083852 Single crystal growth method and single crystal pulling apparatus  
A silicon single crystal growth method of pulling up and growing a single crystal from a melt of a silicon raw material melted in a quartz crucible based on a Czochralski method, the method...
8080106 Epitaxial silicon wafer and production method thereof  
Provided are an epitaxial silicon wafer in which the warping is reduced by rendering a cross-sectional form of a silicon wafer for epitaxial growth into an adequate form as compared with the...
8080421 Method for determining crystallization parameters and apparatus for use with the same  
The present disclosure provides a method to allow a user to pre-screen numerous crystallization conditions in the crystallization space to identify those conditions with the highest probability of...
8075689 Apparatus for the production of silica crucible  
In an apparatus for the production of a silica crucible comprising a carbon mold suitable for producing the silica crucible by the rotating mold method, the carbon mold has a thermal conductivity...
8075996 Ceramic sintered compact and piezoelectric element  
A ceramics sintered compact is provided in which a relative dielectric constant and an electromechanical coupling coefficient are improved in superior balance and which shows a relatively high...
8071466 Zinc sulfide crystals for optical components  
Zinc sulfide (ZnS) single crystals and multi-grain ZnS crystals are suitable for many applications. The disclosed method produces ZnS single crystals or multi-grain ZnS crystals. More specifically,...
8071167 Surface pre-treatment for enhancement of nucleation of high dielectric constant materials  
Embodiments of the present invention relate to a surface preparation treatment for the formation of thin films of high k dielectric materials over substrates. One embodiment of a method of forming...
8066814 Crystal-growing furnace having slurry drainage duct structure  
A crystal-growing furnace having a slurry drainage duct structure includes a furnace body, a supporting table, a loading frame, a plurality of eaves elements, and a set of eaves gutters. The...
8062421 Shaped nanocrystal particles and methods for making the same  
Shaped nanocrystal particles and methods for making shaped nanocrystal particles are disclosed. One embodiment includes a method for forming a branched, nanocrystal particle. It includes (a)...
8062420 Nonlinear optical crystals and their manufacture and use  
Described are nonlinear optical (NLO) crystals, including aluminum-borate NLO crystals, that have low concentrations of contaminants that adversely affect the NLO crystal's optical properties, such...
8062419 Rare-earth oxyorthosilicate scintillator crystals and method of making rare-earth oxyorthosilicate scintillator crystals  
A method of making LSO scintillators with high light yield and short decay times is disclosed. In one arrangement, the method includes codoping LSO with cerium and another dopant from the IIA or...
8063338 Enhancing the width of polycrystalline grains with mask  
A system, method and masking arrangement are provided of enhancing the width of polycrystalline grains produced using sequential lateral solidification using a modified mask pattern is disclosed....
8062422 Method and apparatus for generating a precursor for a semiconductor processing system  
Embodiments described herein are directed to an apparatus for generating a precursor for a semiconductor processing system. In one embodiment, an apparatus for generating a precursor gas during a...
8062423 Crystal-growing furnace with convectional cooling structure  
A crystal-growing furnace with a convectional cooling structure includes a furnace body, a heating room, and at least one heater. The heating room is accommodated in the furnace body, and includes...
8058640 Branched nanoscale wires  
The present invention generally relates to nanotechnology and, in particular, to branched nanoscale wires. In some cases, the branched nanoscale wires may be produced using vapor-phase and/or...
8057598 Manufacturing equipment for polysilicon ingot  
Disclosed therein is an apparatus for producing a polycrystalline silicon ingot for a solar cell, which has uniform crystal grains formed by solidifying silicon melted in a crucible using a cooling...
8057597 Capsule and elements for synthesised diamond production  
The present invention consists in obtaining, with the capsule described, a vertical gradient favorable for diamond growth that prevails over any radial gradient by means of heating discs placed at...
8057596 Carbon-based composite particle for electron emission device, and method for preparing  
Disclosed is a carbon-based composite particle for an electron emission source comprising: a particle of a material selected from the group consisting of metals, oxides, and ceramic materials; and...
8052789 Polycrystalline silicon and crystallization method thereof  
Disclosed are a polycrystalline silicon and a crystallization method thereof according to an exemplary embodiment of the present invention. The polycrystalline silicon comprises: an insulating...
8052791 Crystallization apparatus, crystallization method, phase modulation element, device and display apparatus  
A phase modulation element according to the present invention has a first area having a first phase value based on a phase modulation unit having a predetermined size and a second area having a...
8052793 Method for producing silicon carbide single crystal  
A method for producing a silicon carbide single crystal, which comprises bringing a silicon carbide single crystal substrate into contact with a melt prepared by melting a raw material containing...
8052790 Mask for silicon crystallization, method of forming poly-silicon thin film, and manufacturing method of thin film transistor  
A silicon crystallization mask of the present invention includes; a main exposure portion including a plurality of complete light transmission regions which completely transmit light therethrough,...
8051888 Seed crystal fixing device  
Provided is a seed crystal fixing device 1 for fixing a seed crystal 9 to a seed crystal placing part 3 of a reaction vessel with an adhesive interposed in between. The seed crystal fixing device 1...
8052794 Directed reagents to improve material uniformity  
A method for locally controlling the stoichiometry of an epitaxially deposited layer on a semiconductor substrate is provided. The method includes directing a first reactant gas and a doping gas...