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8277558 Czochralski apparatus for growing crystals and purification method of waste salts using the same  
Disclosed are a czochralski apparatus for growing crystals and a purification method of waste salts using the same. More particularly, the present invention provides a czochralski apparatus for...
8278624 Lutetium oxyorthosilicate scintillator having improved scintillation and optical properties and method of making the same  
LSO scintillation crystals with improved scintillation and optical properties are achieved by controlled co-doping a LSO crystal melt with amounts of cerium and an additional codopant such as...
8277559 Quartz glass crucible for pulling up silicon single crystal and method for manufacture thereof  
A quartz glass crucible which has a non-transparent outer layer formed through melting a natural silica powder and a transparent layer formed in the inside of the outer layer, wherein the...
8278666 Method and apparatus for growing high purity 2H-silicon carbide  
The disclosure relates to a high purity 2H-SiC composition and methods for making same. The embodiments represented herein apply to both thin film and bulk growth of 2H-SiC. According to one...
8278672 Semiconductor light-emitting device and fabrication method thereof  
A semiconductor light-emitting device is disclosed. The semiconductor light-emitting device comprises a multilayer epitaxial structure disposed on a semiconductor substrate. The semiconductor...
8273177 Titanium-doped indium oxide films  
An apparatus and methods of forming the apparatus include a film of transparent conductive titanium-doped indium oxide for use in a variety of configurations and systems. The film of transparent...
8273176 Method for processing silicon powder to obtain silicon crystals  
Embodiments of the present invention relate to a process for obtaining silicon crystals from silicon. The method includes contacting silicon powder with a solvent metal to provide a mixture...
8268074 Method and device for producing oriented solidified blocks made of semi-conductor material  
A method and a device for producing oriented solidified blocks made of semi-conductor material are provided. The device includes a crucible, in which melt is received, and has an insulation which...
8268077 Upper heater, single crystal production apparatus, and method for producing single crystal  
An upper heater for use in the production of a single crystal, the upper heater having electrodes to which a current is supplied and a heat generating section which generates heat by resistance...
8268076 SOI wafers having MxOy oxide layers on a substrate wafer and an amorphous interlayer adjacent the substrate wafer  
SOI wafers are manufactured by forming on a silicon substrate a monocrystalline first, cubic 1a-3 metal or mixed metal oxide layer whose lattice constant differs from that of the substrate by 5% or...
8268075 Method of producing zinc oxide semiconductor crystal  
A method of producing a zinc oxide-based semiconductor crystal, including: introducing at least zinc and oxygen on a surface of a substrate; and growing a zinc oxide-based semiconductor crystal on...
8262796 β-Ga2O3 single crystal growing method, thin-film single crystal growing method, Ga2O3 light-emitting device, and its manufacturing method  
A thin-film single crystal growing method includes preparing a substrate, irradiating an excitation beam on a metallic target made of a pure metal or an alloy in a predetermined atmosphere, and...
8263483 Method including producing a monocrystalline layer  
A method including producing a monocrystalline layer is disclosed. A first lattice constant on a monocrystalline substrate has a second lattice constant at least in a near-surface region. The...
8263984 Process for making a GaN substrate  
In some embodiments, the invention relates to a process for making a GaN substrate comprising: transferring a first monocrystal GaN layer onto a supporting substrate; applying crystal growth for a...
8263424 Opto-electronic and electronic devices using an N-face or M-plane gallium nitride substrate prepared via ammonothermal growth  
A method for growing III-V nitride films having an N-face or M-plane using an ammonothermal growth technique. The method comprises using an autoclave, heating the autoclave, and introducing ammonia...
8262794 Lithium niobate wafers with narrow distribution of surface acoustic wave properties  
A method is provided of growing crystals from compounds that melt congruently with negligible volatilization. The composition of one or more crystal samples is measured. A determination is made of...
8262797 Weir design providing optimal purge gas flow, melt control, and temperature stabilization for improved single crystal growth in a continuous Czochralski process  
A weir is extended vertically to define an optimal annular gap between the top of the weir and the underside of a super-adjacent heat shield. The annular gap provides a high velocity stream of...
8262795 Method and apparatus for the production of crystalline silicon substrates  
An apparatus and method for producing a crystalline ribbon continuously from a melt pool of liquid feed material, e.g. silicon. The silicon is melted and flowed into a growth tray to provide a melt...
8257496 Crucible weight measurement system for controlling feedstock introduction in Czochralski crystal growth  
A weighing system is provided for a continuous Czochralski process that accurately measures the weight of the crucible and melt during crystal growth to control the introduction of feedstock in...
8258051 Method of manufacturing III-nitride crystal, and semiconductor device utilizing the crystal  
The present III-nitride crystal manufacturing method, a method of manufacturing a III-nitride crystal (20) having a major surface (20m) of plane orientation other than {0001}, designated by choice,...
8257675 Artificial quartz member, process for producing the same, and optical element comprising the same  
An object of the present invention is to provide an artificial quartz member inhibited from suffering the decrease in transmittance in a laser light wavelength region which is caused by long-term...
8257495 Crucible holding member and method for producing the same  
A crucible holding member includes a mesh body having an axis direction. The mesh body includes a hollow, an opening, and a plurality of strands. The hollow is provided inside the opening. The...
8257493 Photonic crystal, conjugated polymers suitable for photonic crystal, and a method for synthesizing conjugated polymers  
The present invention relates to conjugated polymers and a method for their synthesis. Furthermore, the present invention relates to electro-synthesis methods for producing polymers that include...
8257492 Methods for purifying metallurgical silicon  
A method for purifying silicon bearing materials for photovoltaic applications includes providing metallurgical silicon into a crucible apparatus. The metallurgical silicon is subjected to at least...
8257494 Self-composite comprised of nanocrystalline diamond and a non-diamond component useful for thermoelectric applications  
One provides nanocrystalline diamond material that comprises a plurality of substantially ordered diamond crystallites that are sized no larger than about 10 nanometers. One then disposes a...
8258050 Method of making light trapping crystalline structures  
A method of making a crystalline semiconductor structure provides a photonic device by employing low thermal budget annealing process. The method includes annealing a non-single crystal...
8258603 Solid-state high-luminance far ultraviolet light emitting element including highly pure hexagonal boron nitride single crystal  
A solid-state far ultraviolet light emitting element is formed by a hexagonal boron nitride single crystal, excited by electron beam irradiation to emit far ultraviolet light having a maximum light...
8257491 Rhombohedral cubic semiconductor materials on trigonal substrate with single crystal properties and devices based on such materials  
Growth conditions are developed, based on a temperature-dependent alignment model, to enable formation of cubic group IV, group II-V and group II-VI crystals in the [111] orientation on the basal...
8252404 High resistivity silicon wafers  
Disclosed are high resistivity silicon wafers, wherein the interstitial oxygen concentration thereof is 8×1017 atoms/cm3 (ASTM F121-1979) or less, BMD (Bulk Micro Defect) density—oxygen pr...
8252208 Calcium fluoride optics with improved laser durability  
The invention is directed to calcium fluoride crystal optics with improved laser durability that can be used for the transmission of below 250 nanometer (nm) electromagnetic radiation. The optics...
8252112 High speed thin film deposition via pre-selected intermediate  
A method and apparatus for the unusually high rate deposition of thin film materials on a stationary or continuous substrate. The method includes delivery of a pre-selected precursor intermediate...
8246746 Laser uses for single-crystal CVD diamond  
The present invention is directed to new laser-related uses for single-crystal diamonds produced by chemical vapor deposition. One such use is as a heat sink for a laser; another such use is as a...
8246744 Method for predicting precipitation behavior of oxygen in silicon single crystal, method for determining production parameter of silicon single crystal, and storage medium for storing program for predicting precipitation behavior of oxygen in silicon single crystal  
By specifying an initial oxygen concentration in a silicon single crystal and a concentration of thermal donors produced according to a thermal history from 400° C. to 550° C. that the silicon s...
8246743 Single crystal silicon carbide nanowire, method of preparation thereof, and filter comprising the same  
Single-crystal silicon carbide nanowires and a method for producing the nanowires are provided. The single-crystal silicon carbide nanowires have a very high aspect ratio and can be used for the...
8247887 Method and surface morphology of non-polar gallium nitride containing substrates  
An optical device, e.g., LED, laser. The device includes a non-polar gallium nitride substrate member having a slightly off-axis non-polar oriented crystalline surface plane. In a specific...
8246745 Method and device for producing metal foils  
A method and device for producing metal foils using the foil-casting principle includes the steps of filling a casting frame with liquid metal, moving a substrate through the bottom of the casting...
8241422 Gallium nitride single crystal growing method and gallium nitride single crystal  
It is provided a method of growing gallium nitride single crystal of good quality with a high productivity, in the growth of gallium nitride single crystal by Na-flux method. Gallium nitride single...
8241424 Single crystal semiconductor manufacturing apparatus and manufacturing method  
An upper side heater 10 is configured so that a current passage width becomes larger at a heater lower part than at a heater upper part. Thus, the upper side heater 10 has a current-carrying...
8241420 Single crystal material and process for producing the same  
The invention intends to provide a single crystal material that can be used as a dielectric material for use in electronic devices, which has a high Qf value; and a process for producing the same....
8242420 Directional solidification of silicon by electric induction susceptor heating in a controlled environment  
An apparatus and process are provided for directional solidification of silicon by electric induction susceptor heating in a controlled environment. A susceptor vessel is positioned between upper...
8241423 Silicon single crystal substrate and manufacture thereof  
A semiconductor wafer for an epitaxial growth is disclosed comprising: a main face on which a vapor phase epitaxial layer grows; a back face provided on an opposite side of the wafer; a main...
8241421 Epitaxial wafer and production method thereof  
The epitaxial layer defects generated from voids of a silicon substrate wafer containing added hydrogen are suppressed by a method for producing an epitaxial wafer by: growing a silicon crystal by...
8236103 Group III nitride semiconductor crystal, production method thereof and group III nitride semiconductor epitaxial wafer  
A method for producing a Group III nitride semiconductor crystal includes a first step of supplying a Group III raw material and a Group V raw material at a V/III ratio of 0 to 1,000 to form and...
8236104 Single-crystal manufacturing apparatus and single-crystal manufacturing method  
A single-crystal manufacturing apparatus comprising at least: a main chamber configured to accommodate a crucible; a pulling chamber continuously provided above the main chamber, the pulling...
8236102 Hydrothermal methods of fabricating trivalent-metal-ion-doped sapphire crystals  
A method of hydrothermally synthesizing sapphire single crystals doped with trivalent metal ions in a crystal-growth autoclave including a crystal-growth zone and nutrient-dissolution zone in fluid...
8236267 High-pressure vessel for growing group III nitride crystals and method of growing group III nitride crystals using high-pressure vessel and group III nitride crystal  
The present invention discloses a high-pressure vessel of large size formed with a limited size of e.g. Ni—Cr based precipitation hardenable superalloy. The vessel may have multiple zones. For i...
8232114 RTP spike annealing for semiconductor substrate dopant activation  
A semiconductor substrate has a plurality of active device patterns. At least some of the active device patterns comprise doped regions. The substrate has a plurality of surface regions, including...
8231729 Apparatus for producing nitride single crystal  
It is disclosed an apparatus for growing a nitride single crystal using a flux containing an easily oxidizable substance. The apparatus has a crucible for storing the flux; a pressure vessel for...
8231727 Crystal growth apparatus and method  
Systems and methods are disclosed for crystal growth using VGF and VB growth processes to reduce body lineage. In one exemplary embodiment, there is provided a method of inserting an ampoule with...
8231724 Reactor for polycrystalline silicon and polycrystalline silicon production method  
The reactor for polycrystalline silicon is a reactor for polycrystalline silicon in which a silicon seed rod installed inside the reactor is heated by supplying electricity, a raw material gas...