Sign up


Match Document Document Title
8221544 Line scan sequential lateral solidification of thin films  
A polycrystalline film is prepared by (a) providing a substrate having a thin film disposed thereon, said film capable of laser-induced melting, (b) generating a sequence of laser pulses having a...
8221548 Diamond semiconductor element and process for producing the same  
A process for producing a diamond thin-film includes forming a diamond crystal thin-film on a substrate and firing the diamond crystal thin-film at a sufficient temperature under high pressure...
8221547 Nitride semiconductor substrate and method for forming the same  
An initial substrate structure for forming a nitride semiconductor substrate is provided. The initial substrate structure includes a substrate, a patterned epitaxial layer, and a mask layer. The...
8216373 Device and process for producing a block of crystalline material  
A temperature gradient is established in a crystallization crucible by means of a heat source and a cooling system. The cooling system comprises a heat exchanger and an adjustable additional heat...
8216537 Silicon-germanium hydrides and methods for making and using same  
The present invention provides novel silicon-germanium hydride compounds, methods for their synthesis, methods for their deposition, and semiconductor structures made using the novel compounds.
8216371 Single crystal manufacturing apparatus and method  
A Czochralski single crystal manufacturing apparatus uses multiple heaters to improve the controllability of crystal diameter. The power supplied to the multiple heaters is controlled so as to...
8216366 Method for manufacturing a cubic silicon carbide single crystal thin film and semiconductor device based on the cubic silicon carbide single crystal thin film  
A cubic silicon carbide single crystal thin film is manufactured by a method. A sacrificial layer is formed on a surface of a substrate. A cubic semiconductor layer is formed on the sacrificial...
8216363 Continuous antisolvent crystallization process and system using plug flow reactors  
A process and system for continuous crystallization of a compound using antisolvent addition in which a solution is prepared with an organic compound and a solvent. An antisolvent is added to the...
8216369 System for forming SiC crystals having spatially uniform doping impurities  
A physical vapor transport system includes a growth chamber charged with source material and a seed crystal in spaced relation, and at least one capsule having at least one capillary extending...
8216370 Method for reducing defect concentration in crystals  
A method for removing defects at high pressure and high temperature (HP/HT) or for relieving strain in a non-diamond crystal commences by providing a crystal, which contains defects, and a pressure...
8216367 Method for production of silicon carbide layer, gallium nitride semiconductor device and silicon substrate  
A method for producing a silicon carbide layer on a surface of a silicon substrate includes the step of irradiating the surface of the silicon substrate heated in a high vacuum at a temperature in...
8216362 Controlling agglomerated point defect and oxygen cluster formation induced by the lateral surface of a silicon single crystal during CZ growth  
Processes for preparing a single crystal silicon ingot are disclosed. In certain embodiments, the processes involve controlling (1) a growth velocity, v, of the ingot as well as (2) an average...
8216361 Monocrystalline semiconductor wafer comprising defect-reduced regions and method for producing it  
Monocrystalline semiconductor wafers have defect-reduced regions, the defect-reduced regions having a density of GOI-relevant defects within the range of 0/cm2 to 0.1/cm2 and occupy overall an...
8216372 Apparatus for growing high quality silicon single crystal ingot and growing method using the same  
The invention relates to an apparatus and method for growing a high quality Si single crystal ingot and a Si single crystal ingot and wafer produced thereby. The growth apparatus controls the...
8216368 Method of fabricating an epitaxially grown layer  
A method of forming an epitaxially grown layer, preferably by providing a region of weakness in a support substrate and transferring a nucleation portion to the support substrate by bonding. A...
8216365 Method for producing a semiconductor crystal  
Objects of the invention are to further enhance crystallinity and crystallinity uniformity of a semiconductor crystal produced through the flux method, and to effectively enhance the production...
8216364 System and method for low-power nanotube growth using direct resistive heating  
Direct resistive heating is used to grow nanotubes out of carbon and other materials. A growth-initiated array of nanotubes is provided using a CVD or ion implantation process. These processes use...
8210906 Slicing method and method for manufacturing epitaxial wafer  
A wafer slicing method includes winding a wire around rollers and pressing the wire against an ingot while supplying slurry to the rollers. A previously conducted experiment provides a supply...
8212254 Thin film transistor, manufacturing method thereof, and semiconductor device  
By a laser crystallization method, a crystalline semiconductor film in which grain boundaries are all in one direction is provided as well as a manufacturing method thereof. In crystallizing a...
8211228 Method for producing single crystal and a method for producing annealed wafer  
The present invention is a method for producing a single crystal that is a multi-pulling method for pulling a plurality of single crystals from a raw material melt in a same crucible in a chamber...
8206505 Method for forming nano-dimensional clusters and setting ordered structures therefrom  
The inventive method for forming nano-dimensional clusters consists in introducing a solution containing a cluster-forming material into nano-pores of natural or artificial origin contained in a...
8202788 Method for fabricating GaNAsSb semiconductor  
Disclosed is a method for fabrication of a semiconductor of gallium nitride arsenide antimonide (GaNAsSb) on a substrate wherein the fabrication is performed at a fabrication temperature followed...
8201947 Wavelength converter and green light source and projection apparatus using the same  
A wavelength converter includes a supporting substrate and a ferroelectric substrate, the ferroelectric substrate includes at least one waveguide facing the supporting substrate and at least one...
8202365 Process for producing oriented inorganic crystalline film, and semiconductor device using the oriented inorganic crystalline film  
In a process for producing an oriented inorganic crystalline film, a non-monocrystalline film containing inorganic crystalline particles is formed on a substrate by a liquid phase technique using a...
8202364 Method for solid-state single crystal growth  
By controlling the average size of matrix grains of polycrystalline bodies to more than a critical size at which an abnormal, exaggerated or discontinuous grain growth ends, and less than twice the...
8202728 Substrates useful for cell culture and methods for making and using same  
Described herein are substrates coated with crystals having uniform crystalline morphology on the surface of the substrate. The coated substrates are useful in culturing and performing functional...
8197781 Sputtering target of Li3PO4 and method for producing same  
A method of forming a lithium orthophosphate sputter target or tile and resulting target material is presented. The target is fabricated from a pure lithium orthophosphate powder refined to a fine...
8197595 Method and device for producing thin silicon rods  
A method for producing thin silicon rods using a floating zone crystallization process includes supplying high frequency (HF) current to a flat induction coil having a central opening, a plurality...
8197596 Crystal growth method and reactor design  
A crystal growth process comprising providing a reactor having a crucible with an injector apparatus and a seed holder. The injector apparatus has an inner gas conduit and an outer gas conduit...
8197594 Silicon wafer for semiconductor and manufacturing method thereof  
Silicon wafers having a density of BMDs with sizes between 20 to 40 nm at positions ≧20 μm below the wafer surface in the range of 5×1011/cm3, and a density of BMDs with sizes of ≧300 nm≦1×...
8198628 Doped substrate to be heated  
A semiconductor structure that is to be heated. The structure includes a substrate for the front face deposition of a useful layer intended to receive components for electronics, optics or...
8197598 Method for manufacturing iron silicide nano-wires  
A method for making iron silicide nano-wires comprises the following steps. Firstly, providing a growing substrate and a growing device, the growing device comprising a heating apparatus and a...
RE43469 Single crystals and methods for fabricating same  
Various single crystals are disclosed including sapphire. The single crystals have desirable geometric properties, including a width not less than about 15 cm and the thickness is not less than...
8197597 Gallium trichloride injection scheme  
The present invention is related to the field of semiconductor processing equipment and methods and provides, in particular, methods and equipment for the sustained, high-volume production of Group...
8193537 Optically controlled silicon carbide and related wide-bandgap transistors and thyristors  
An optically active material is used to create power devices and circuits having significant performance advantages over conventional methods for affecting optical control of power electronics...
8192543 Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the same  
A nitride crystal is characterized in that, in connection with plane spacing of arbitrary specific parallel crystal lattice planes of the nitride crystal obtained from X-ray diffraction measurement...
8192544 Apparatus for manufacturing poly crystaline silicon ingot for solar battery having door open/close device using hinge  
Disclosed herein is an apparatus for manufacturing a polycrystalline silicon ingot for solar batteries having a door control device using a hinge. The apparatus includes a vacuum chamber, a...
8192713 Method of incorporating a mark in CVD diamond  
A method of incorporating a mark of origin, such as a brand mark, or fingerprint in a CVD single crystal diamond material, includes the steps of providing a diamond substrate, providing a source...
RE43450 Method for fabricating semiconductor thin film  
An object of the present invention is to provide a technology of reducing a nickel element in the silicon film which is crystallized by using nickel. An extremely small amount of nickel is...
8187563 Method for producing Si bulk polycrystal ingot  
A method is provided for producing a Si bulk polycrystal ingot with high quality and high homogeneity, which has no significant crystal defects and is free from diffused impurities with a high...
8187383 Semiconductor single crystal manufacturing device and manufacturing method  
In order to provide a semiconductor single crystal manufacturing device and a manufacturing method using a CZ method wherein the resistivity and oxygen concentration of a silicon single crystal can...
8187382 Polycrystalline silicon manufacturing apparatus  
A polycrystalline silicon manufacturing apparatus is provided which supplies raw gas to the inside of a reaction furnace and supplies a current from an electrode to a silicon seed rod in a state...
8187381 Process gas delivery for semiconductor process chamber  
Methods and apparatus for a gas delivery assembly are provided herein. In some embodiments, the gas delivery assembly includes a gas inlet funnel having a first volume and one or more gas conduits;...
8187956 Method for manufacturing microcrystalline semiconductor film, thin film transistor having microcrystalline semiconductor film, and photoelectric conversion device having microcrystalline semiconductor film  
A method for forming a microcrystalline semiconductor film over a base formed of a different material, which has high crystallinity in the entire film and at an interface with the base, is...
8187379 Method of producing high quality relaxed silicon germanium layers  
A method for minimizing particle generation during deposition of a graded Si1-xGex layer on a semiconductor material includes providing a substrate in an atmosphere including a Si precursor and a...
8188573 Nitride semiconductor structure  
A nitride semiconductor substrate and a method for manufacturing the same are provided. The nitride semiconductor substrate includes an epitaxy substrate, a nitride pillar layer, a nitride...
8187377 Non-contact etch annealing of strained layers  
The present invention provides for treating a surface of a semiconductor material. The method comprises exposing the surface of the semiconductor material to a halogen etchant in a hydrogen...
8188512 Growth of germanium epitaxial thin film with negative photoconductance characteristics and photodiode using the same  
A method of growing a germanium (Ge) epitaxial thin film having negative photoconductance characteristics and a photodiode using the same are provided. The method of growing the germanium (Ge)...
8187378 Silicon single crystal pulling method  
An object of the present invention is to provide a silicon single crystal pulling method of accurately controlling the diameter of a silicon single crystal, thereby obtaining a high-quality silicon...
8187380 Method of growing single crystal diamond in a plasma reactor  
Synthetic monocrystalline diamond compositions having one or more monocrystalline diamond layers formed by chemical vapor deposition, the layers including one or more layers having an increased...