Sign up


Match Document Document Title
8188512 Growth of germanium epitaxial thin film with negative photoconductance characteristics and photodiode using the same  
A method of growing a germanium (Ge) epitaxial thin film having negative photoconductance characteristics and a photodiode using the same are provided. The method of growing the germanium (Ge)...
8187378 Silicon single crystal pulling method  
An object of the present invention is to provide a silicon single crystal pulling method of accurately controlling the diameter of a silicon single crystal, thereby obtaining a high-quality silicon...
8187380 Method of growing single crystal diamond in a plasma reactor  
Synthetic monocrystalline diamond compositions having one or more monocrystalline diamond layers formed by chemical vapor deposition, the layers including one or more layers having an increased...
8182607 In-situ crystalline material screening apparatus and method  
There is provided a method and apparatus for assessing in-situ crystal formation in a test sample. Both optical imaging and X-ray diffraction techniques are utilized, with the results of these...
8177910 System and method for crystal growing  
To reduce the heat input to the bottom of the crucible and to control heat extraction independently of heat input, a shield can be raised between a heating element and a crucible at a controlled...
8177911 Damage evaluation method of compound semiconductor member, production method of compound semiconductor member, gallium nitride compound semiconductor member and gallium nitride compound semiconductor membrane  
A method of evaluating damage of a compound semiconductor member, comprising: a step of performing measurement of photoluminescence on a surface of the compound semiconductor member; and a step of...
8172945 High-purity vitreous silica crucible for pulling large-diameter single-crystal silicon ingot  
A high-purity vitreous silica crucible used for pulling a large-diameter single-crystal silicon ingot, includes a double layered structure constituted by an outer layer composed of high-purity...
8172941 Method and device for producing semiconductor wafers of silicon  
Semiconductor wafers of silicon are produced by pulling a single crystal from a melt contained in a crucible and slicing semiconductor wafers from the pulled single crystal, heat being delivered to...
8172943 Single Crystal manufacturing method  
Single crystalline ingots can be stably pulled free from dislocation and with a good crystal shape by actuating a crystal driving unit so as to immerse a seed crystal in a silicon melt, and...
8172944 Device for producing a block of crystalline material with modulation of the thermal conductivity  
The device for producing a block of crystalline material from a bath of molten material comprises a crucible having a bottom and heat extraction means arranged under the crucible. It also comprises...
8172942 Arc discharge apparatus, apparatus and method for manufacturing vitreous silica glass crucible, and method for pulling up silicon single crystal  
The arc discharge apparatus comprises a plurality of carbon electrodes connected to respective phases of a power supply for heating a silica powder and causing it to fuse by generating arc...
8168000 III-nitride semiconductor device fabrication  
A method of fabricating a III-nitride power semiconductor device which includes selective prevention of the growth of III-nitride semiconductor bodies to selected areas on a substrate in order to...
8163444 Mask for crystallizing a semiconductor layer and method of crystallizing a semiconductor layer using the same  
A mask for crystallizing a semiconductor layer includes a plurality of first main-slit portions, a plurality of second main-slit portions, upper slit portion and lower slit portion. The first...
8164100 Semiconductor device and method of manufacturing thereof  
A semiconductor device is provided in which the contact resistance of the interface between an electrode and the semiconductor substrate is reduced. The semiconductor device includes a 4H polytype...
8163086 Halogen assisted physical vapor transport method for silicon carbide growth  
A physical vapor transport growth technique for silicon carbide is disclosed. The method includes the steps of introducing a silicon carbide powder and a silicon carbide seed crystal into a...
8163403 Epitaxial layers on oxidation-sensitive substrates and method of producing same  
This invention disclosure describes methods for the fabrication of metal oxide films on surfaces by topotactic anion exchange, and laminate structures enabled by the method. A precursor...
8163084 Nanostructure and manufacturing method for same  
The invention relates to nanostructure and its manufacturing method. In the manufacturing method of a nanostructure, first anisotropic crystalline particles, connectors having end to be connected...
8163083 Silica glass crucible and method for pulling up silicon single crystal using the same  
A silica glass crucible causing fewer pinholes in silicon single crystals is provided by a method of preventing pinholes by performing the pulling up of a silicon single crystal while restraining...
8163085 Method and apparatus for forming protective layer  
An apparatus for forming a protective layer of magnesium oxide on a front glass substrate (11) in an evaporation chamber (201) includes the following: oxygen outlet openings (222) for introducing...
8163573 Method for manufacturing nitride semiconductor element  
InyGa1-yN (0
8159037 Stack structure comprising epitaxial graphene, method of forming the stack structure, and electronic device comprising the stack structure  
Provided are a stack structure including an epitaxial graphene, a method of forming the stack structure, and an electronic device including the stack structure. The stack structure includes: a Si...
8157914 Substrate surface modifications for compositional gradation of crystalline materials and associated products  
A compositionally graded material having low defect densities and improved electronic properties is disclosed and described. A compositionally graded inorganic crystalline material can be formed by...
8157912 Method of converting PCA to sapphire and converted article  
Polycrystalline alumina (PCA) that has been doped with magnesium oxide is converted to sapphire by additionally doping the PCA with boron oxide and sintering to induce abnormal grain growth. The...
8157913 Method of forming a sapphire single crystal  
Various single crystals are disclosed including sapphire. The single crystals have desirable geometric properties, including a width not less than about 15 cm and the thickness is not less than...
8152921 Crystal manufacturing  
An implementation of a Czochralski-type crystal growth has been shown and embodied. More particularly, a furnace with suitable insulation and flow arrangement is shown to improve the...
8152920 Crucible for the crystallization of silicon  
A crucible and method for the crystallization of silicon utilize release coatings. The crucible is used in the handling of molten materials that are solidified in the crucible and then removed as...
8152918 Methods for epitaxial silicon growth  
Methods of cleaning substrates and growing epitaxial silicon thereon are provided. Wafers are exposed to a plasma for a sufficient time prior to epitaxial silicon growth, in order to clean the...
8152919 Epitaxial silicon wafer and fabrication method thereof  
An epitaxial silicon wafer is provided in which an epitaxial layer is grown on a silicon wafer having a plane inclined from a {110} plane of a silicon single crystal as a main surface. In the...
8147611 Method of manufacturing single crystal  
A method of manufacturing a single crystal based on a Czochralski method of applying a horizontal magnetic field, wherein the single crystal is pulled in such a manner that a radial magnetic field...
8147991 One hundred millimeter single crystal silicon carbide wafer  
A method is disclosed for producing a high quality bulk single crystal of silicon carbide in a seeded growth system by reducing the separation between a silicon carbide seed crystal and a seed...
8147613 Crystal puller and method for growing a monocrystalline ingot  
A crystal puller for growing monocrystalline ingots includes a side heater adjacent a crucible for heating the crucible and a melt heat exchanger sized and shaped for surrounding the ingot and...
8147612 Method for manufacturing gallium nitride crystal and gallium nitride wafer  
There is provided a method for fabricating a gallium nitride crystal with low dislocation density, high crystallinity, and resistance to cracking during polishing of sliced pieces by growing the...
8142678 Perovskite type oxide material, piezoelectric element, liquid discharge head and liquid discharge apparatus using the same, and method of producing perovskite type oxide material  
A perovskite type oxide of a single crystal structure or a uniaxial-oriented crystal structure is represented by ABO3. Site A includes Pb as a main component and site B includes a plurality of...
8143142 Method of fabricating epi-wafer, epi-wafer fabricated by the method, and image sensor fabricated using the epi-wafer  
A method of fabricating an epi-wafer includes providing a wafer including boron by cutting a single crystal silicon ingot, growing an insulating layer on one surface of the wafer, performing...
8142566 Method for producing Ga-containing nitride semiconductor single crystal of BxAlyGazIn1-x-y-zNsPtAs1-s-t (0<=x<=1, 0<=y<1, 0  
A Ga-containing nitride semiconductor single crystal characterized in that (a) the maximum reflectance measured by irradiating the Ga-containing nitride semiconductor single crystal with light at a...
8142676 Magnetic garnet single crystal and optical element using the same  
The invention relates to a magnetic garnet single crystal and an optical element using the same, for the purpose of providing a magnetic garnet single crystal at a reduced Pb content, and an...
8142565 Vitreous silica crucible for pulling single-crystal silicon  
A vitreous silica crucible for pulling single-crystal silicon, which is formed of vitreous silica and has a bottomed cylindrical shape, wherein, in a liquid-level movement range in the inner...
8143147 Methods and systems for forming thin films  
A method and apparatus for the deposition of thin films is described. In embodiments, systems and methods for epitaxial thin film formation are provided, including systems and methods for forming...
8137460 Manufacturing method of GaN thin film template substrate, GaN thin film template substrate and GaN thick film single crystal  
Provided are a manufacturing method of a GaN single crystal in which the film thickness of the GaN single crystal can be controlled accurately, even when a hydride vapor phase epitaxy is applied; a...
8137461 Piezoelectric substrate, piezoelectric element, liquid discharge head and liquid discharge apparatus  
A piezoelectric substrate of a perovskite-type oxide is expressed by a general formula of ABO3 having a laminate structure of a single crystal structure or a uniaxial crystal structure expressed by...
8137457 One-pot synthesis of high-quality metal chalcogenide nanocrystals without precursor injection  
A method of forming monodisperse metal chalcogenide nanocrystals without precursor injection, comprising the steps of: combining a metal source, a chalcogen oxide or a chalcogen oxide equivalent,...
8137825 Aluminum nitride single crystal film, aluminum nitride single crystal multi-layer substrate and manufacturing processes thereof  
In a method of manufacturing an aluminum nitride single crystal film on a substrate by heating a sapphire substrate in the presence of carbon, nitrogen and carbon monoxide, an aluminum compound...
8137458 Epitaxial growth of ZnO with controlled atmosphere  
A ZnO crystal growth method has the steps of (a) preparing a substrate having a surface capable of growing ZnO crystal exposing a Zn polarity plane; (b) supplying Zn and O above the surface of the...
8137459 Method for producing nanoparticles for magnetic fluids by electron-beam evaporation and condensation in vacuum, a magnetic fluid producing method and magnetic fluid produced according to said method  
The inventive method for producing nanoparticles for ferrofluids by electron-beam evaporation and condensation in vacuum, consists in evaporating an initial solid material and in fixing...
8138066 Dislocation engineering using a scanned laser  
A method for generating patterned strained regions in a semiconductor device is provided. The method includes directing a light-emitting beam locally onto a surface portion of a semiconductor body;...
8133318 Epitaxially coated silicon wafer with 110 orientation and method for producing it  
An epitaxially coated silicon wafer comprises a plane surface misoriented relative to a {110} crystal plane, wherein the <110> direction of the single silicon crystal is tilted away by the angle θ ...
8133806 Systems and methods for forming semiconductor materials by atomic layer deposition  
Methods of depositing a III-V semiconductor material on a substrate include sequentially introducing a gaseous precursor of a group III element and a gaseous precursor of a group V element to the...
8133321 Process for producing silicon carbide single crystal  
A process for producing a silicon carbide single crystal in which a silicon carbide single crystal layer is homo-epitaxially or hetero-epitaxially grown on a surface of a single crystal substrate,...
8133815 Method of polishing compound semiconductor substrate, compound semiconductor substrate, method of manufacturing compound semiconductor epitaxial substrate, and compound semiconductor epitaxial substrate  
Compound-semiconductor-substrate polishing methods, compound semiconductor substrates, compound-semiconductor-epitaxial-substrate manufacturing methods, and compound semiconductor epitaxial...
8133320 Diamond heat sink in a laser  
A laser has a laser material in thermal contact with a diamond, such that the diamond is operable to carry heat away from the laser material. In further embodiments, the diamond has a reduced...