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8338273 Pulsed selective area lateral epitaxy for growth of III-nitride materials over non-polar and semi-polar substrates  
An epitaxy procedure for growing extremely low defect density non-polar and semi-polar III-nitride layers over a base layer, and the resulting structures, is generally described. In particular, a...
8337614 GaN single crystal substrate and method for processing surface of GaN single crystal substrate  
The surface of a gallium nitride single crystal substrate is processed, e.g., comprising steps by planarizing the top side and the bottom side of a gallium nitride original substrate positioned on...
8337945 Method for producing an element, including a multiplicity of nanocylinders on a substrate  
A method for producing an element including a substrate having a plurality of nanocylinders deposited thereon includes providing the substrate. The substrate is covered with a nanoporous Al2O3...
8334015 Vapor based combinatorial processing  
A combinatorial processing chamber and method are provided. In the method a fluid volume flows over a surface of a substrate with differing portions of the fluid volume having different constituent...
8334156 Nitride semiconductor single crystal substrate, and methods of fabricating the same and a vertical nitride semiconductor light emitting diode using the same  
A nitride semiconductor single crystal substrate, a manufacturing method thereof and a method for manufacturing a vertical nitride semiconductor device using the same. According to an aspect of the...
8333838 Method for producing fluoride crystal  
Provided is an apparatus capable of producing a fluoride crystal in a very short period of time, and a method suitable for producing a fluoride crystal using the apparatus. The apparatus comprises...
8334016 Vapor deposition of metal oxides, silicates and phosphates, and silicon dioxide  
Metal silicates or phosphates are deposited on a heated substrate by the reaction of vapors of alkoxysilanols or alkylphosphates along with reactive metal amides, alkyls or alkoxides. For example,...
8328933 Apparatus and semiconductor co-crystal  
The invention provides a method to enforce face-to-face stacking of organic semiconductors in the solid state that employs semiconductor co-crystal formers (SCCFs), to align semiconductor building...
8329295 Process for producing doped gallium arsenide substrate wafers having low optical absorption coefficient  
A process is disclosed for producing a doped gallium arsenide single crystal by melting a gallium arsenide starting material and subsequently solidifying the gallium arsenide melt, wherein the...
8328937 Seed crystal axis for solution growth of single crystal  
A seed crystal axis used in a solution growth of single crystal production system is provided to prevent formation of polycrystals and grow a single crystal with a high growth rate. The seed...
8328935 Method of manufacturing polycrystalline silicon rod  
The present invention is a method of manufacturing polycrystalline silicon rods, wherein silicon is deposited onto a silicon core wire by a chemical vapor deposition (CVD) method such that a...
8328932 Ribbon crystal pulling furnace afterheater with at least one opening  
A ribbon crystal pulling furnace has an interior for enclosing at least a portion of one or more ribbon crystals, and an afterheater positioned within the interior. The afterheater has at least one...
8328936 Producing a diamond semiconductor by implanting dopant using ion implantation  
A process of producing a diamond thin-film includes implanting dopant into a diamond by an ion implantation technique, forming a protective layer on at least part of the surface of the...
8328934 Crystal of GTP Cyclohydrolase Type IB  
This invention relates to a novel, bacterial GTP Cyclohydrolase Type IB enzyme, and the crystal structure thereof.
8329253 Method for forming a transparent conductive film by atomic layer deposition  
A method for forming a transparent conductive film by atomic layer deposition includes providing more than one kind of oxide precursor which is individually introduced into atomic layer deposition...
8323402 Method for growing aluminum nitride crystal, process for producing aluminum nitride crystal, and aluminum nitride crystal  
Methods of growing and manufacturing aluminum nitride crystal, and aluminum nitride crystal produced by the methods. Preventing sublimation of the starting substrate allows aluminum nitride crystal...
8323406 Defect reduction in seeded aluminum nitride crystal growth  
Bulk single crystal of aluminum nitride (AlN) having an a real planar defect density≦100 cm−2. Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet...
8323407 Gallium trichloride injection scheme  
The invention relates to a method and system for epitaxial deposition of a Group III-V semiconductor material that includes gallium. The method includes reacting an amount of a gaseous Group III...
8323403 SOI wafer and method for producing it  
An SOI wafer is constructed from a carrier wafer and a monocrystalline silicon layer having a thickness of less than 500 nm, an excess of interstitial silicon atoms prevailing in the entire volume...
8323404 Group III nitride crystal and manufacturing method thereof  
A group III nitride crystal containing therein an alkali metal element comprises a base body, a first group III nitride crystal formed such that at least a part thereof makes a contact with the...
8323405 Process and apparatus for growing a crystalline gallium-containing nitride using an azide mineralizer  
An apparatus and associated method for large-scale manufacturing of gallium nitride is provided. The apparatus comprises a large diameter autoclave and a raw material basket. Methods include...
8317920 Directional solidification furnace for reducing melt contamination and reducing wafer contamination  
A directional solidification furnace includes a crucible for holding molten silicon and a lid covering the crucible and forming an enclosure over the molten silicon. The crucible also includes an...
8317919 System for continuous growing of monocrystalline silicon  
An improved system based on the Czochralski process for continuous growth of a single crystal ingot comprises a low aspect ratio, large diameter, and substantially flat crucible, including an...
8313577 Apparatus for producing single crystal silicon  
An apparatus for producing single crystal silicon comprising: an induction heating coil that is disposed around the polycrystalline silicon rod for fusing the polycrystalline silicon rod; an...
8313720 Guided diameter SiC sublimation growth with multi-layer growth guide  
In the growth of a SiC boule, a growth guide is provided inside of a growth crucible that is charged with SiC source material at a bottom of the crucible and a SiC seed crystal at a top of the...
8308864 Single-crystal manufacturing method  
The present invention is a single-crystal manufacturing method based on the Czochralski method, comprising at least the steps of: producing a melt by heating and melting a crystalline raw material...
8309439 Nitride nanowires and method of producing such  
The present invention relates to the growing of nitride semiconductors, applicable for a multitude of semiconductor devices such as diodes, LEDs and transistors. According to the method of the...
8310030 III-nitride crystal substrate and III-nitride semiconductor device  
Affords methods of manufacturing bulk III-nitride crystals whereby at least the surface dislocation density is low globally. The present III-nitride crystal manufacturing method includes: a step of...
8309209 Ribbon crystal string for increasing wafer yield  
A ribbon crystal has a body with a width dimension, and string embedded within the body. The string has a generally elongated cross-sectional shape. This cross-section (of the string) has a...
8303710 High pressure apparatus and method for nitride crystal growth  
A high pressure apparatus and related methods for processing supercritical fluids. In a specific embodiment, the present apparatus includes a capsule, a heater, at least one ceramic ring but can be...
8304057 Ribbon crystal end string with multiple individual strings  
A ribbon crystal has a body and end string within the body. At least one end string has a generally concave cross-sectional shape and is formed from at least two individual strings.
8304241 Method for determining crystallization parameters and apparatus for use with the same  
The present disclosure provides a method to allow a user to pre-screen numerous crystallization conditions in the crystallization space to identify those conditions with the highest probability of...
8303711 Electrode anchoring structure in crystal-growing furnaces  
An electrode anchoring structure in a crystal-growing furnace includes at least one graphite electrode pillar, at least one metal electrode pillar, at least one anchoring base, and at least one...
8303924 Production method for a low-dislocation bulk AlN single crystal and low-dislocation monocrystalline AlN substrate  
A bulk AlN single crystal is grown on a monocrystalline AlN seed crystal having a central longitudinal mid-axis and disposed in a crystal growth region of a growing crucible. The bulk AlN single...
8298926 Silicon wafer with controlled distribution of embryos that become oxygen precipitates by succeeding annealing and its manufacturing method  
A method for making a silicon wafer includes the steps of generating and stabilizing embryos that become oxygen precipitates by succeeding thermal annealing applied during a semiconductor device...
8298333 Crucible for the crystallization of silicon and process for making the same  
A protective coating is prepared for, and applied to, crucibles used in the handling of molten materials that are solidified in the crucible and then removed as ingots. Crucibles containing this...
8298335 Enclosure for controlling the environment of optical crystals  
An enclosure that maintains the environment of one or more optical crystals and allows efficient frequency conversion for light at wavelengths at or below 400 nm with minimal stress being placed on...
8298334 Method for crystallizing Geobacillus strain T1 lipase polypeptide  
The present invention provides a method of crystallizing of enzymes. The method is for rapidly crystallizing enzymes from impure mixtures. The method is simple and cheap, and it is compatible to...
8293007 Removable thermal control for ribbon crystal pulling furnaces  
A ribbon crystal pulling furnace has a base insulation and a liner insulation removably connected to the base insulation. At least a portion of the liner insulation forms an interior for containing...
8293012 Method for growing AlxGa1-xN crystal, and AlxGa1-xN crystal substrate  
Affords AlxGa1-xN crystal growth methods, as well as AlxGa1-xN crystal substrates, wherein bulk, low-dislocation-density crystals are obtained. The AlxGa1-xN crystal (0
8293592 Method of manufacturing semiconductor device and substrate processing apparatus  
A semiconductor device manufacturing method including: (a) loading into a chamber a substrate having at least an exposed silicon surface and an exposed surface of silicon oxide film or silicon...
8293011 Method for growing group III nitride semiconductor crystal and growing device for group III nitride semiconductor crystal  
A method for growing a Group III nitride semiconductor crystal is provided with the following steps: First, a chamber including a heat-shielding portion for shielding heat radiation from a material...
8293008 Large-sized bismuth-zinc-borate nonlinear optical crystal and preparation methods and applications thereof  
The present invention relates to a large-sized and high-quality bismuth-zinc-borate (Bi2 ZnB2 O7) single crystal, preparation methods and applications thereof. The crystal has cross-sectional...
8293010 Templated growth of porous or non-porous castings  
A method of forming a templated casting involves incorporating a liquid feedstock into the channels of a honeycomb substrate to form a feedstock-laden substrate, and directionally solidifying the...
8293628 Strain-controlled atomic layer epitaxy, quantum wells and superlattices prepared thereby and uses thereof  
Processes for forming quantum well structures which are characterized by controllable nitride content are provided, as well as superlattice structures, optical devices and optical communication...
8293009 Methods for efficiently making thin semiconductor bodies from molten material for solar cells and the like  
A pressure differential is applied across a mold sheet and a semiconductor (e.g. silicon) wafer (e.g. for solar cell) is formed thereon. Relaxation of the pressure differential allows release of...
8288683 Fast axis beam profile shaping for high power laser diode based annealing system  
A dynamic surface anneal apparatus for annealing a semiconductor workpiece has a workpiece support for supporting a workpiece, an optical source and scanning apparatus for scanning the optical...
8287643 Clad textured metal substrate for forming epitaxial thin film thereon and method for manufacturing the same  
The present invention provides an oriented substrate for forming an epitaxial thin film thereon, which has a more excellent orientation than that of a conventional one and a high strength, and a...
8287645 Production process for high purity polycrystal silicon and production apparatus for the same  
In the production process of the present invention for high purity polycrystal silicon, using a vertical reactor having a silicon chloride gas-feeding nozzle and a reducing agent gas-feeding nozzle...
8287644 Method for growing silicon carbide single crystal  
In a method for growing a silicon carbide single crystal on a silicon carbide single crystal substrate by contacting the substrate with a solution containing C by dissolving C into the melt that...