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8377205 Apparatus for producing silicon nanocrystals using inductively coupled plasma  
The present disclosure relates to an apparatus for producing silicon nanocrystals, which can minimize plasma diffusion by finely adjusting a plasma region created by an ICP coil. The apparatus...
8377204 Group III nitride single crystal and method of its growth  
Affords methods of growing III nitride single crystals of favorable crystallinity with excellent reproducibility, and the III nitride crystals obtained by the growth methods. One method grows a III...
8377202 Method for manufacturing silicon wafer and silicon wafer manufactured by this method  
A method for manufacturing a silicon wafer having a defect-free region in a surface layer, in which at least only a surface layer region to a predetermined depth from a front surface of a silicon...
8372198 Methods of forming dual damascene structures  
A dual damascene structure and a method of forming a dual damascene structure are disclosed. The dual damascene structure includes an insulation member, a single crystal member and a filling...
8372372 Clean bench and method of producing raw material for single crystal silicon  
A clean bench comprising a worktable on which polycrystalline silicon is placed, a box part which includes side plates to surround three sides except a front face of a working space above the...
8372197 Substrate temperature accuracy and temperature control flexibility in a molecular beam epitaxy system  
A control system and method for controlling temperatures while performing a MBE deposition process, wherein the control system comprises a MBE growth structure; a heater adapted to provide heat for...
8372196 Susceptor device, manufacturing apparatus of epitaxial wafer, and manufacturing method of epitaxial wafer  
In a manufacturing apparatus for manufacturing an epitaxial wafer with a wafer being mounted substantially concentrically with a susceptor, a center rod is provided to extend in an up-and-down...
8372199 Bulk GaN and AlGaN single crystals  
Bulk GaN and AlGaN single crystal boules, preferably fabricated using a modified HVPE process, are provided. The single crystal boules typically have a volume in excess of 4 cubic centimeters with...
8366826 Methods for preparing silicon germanium alloy nanocrystals  
The present invention relates to a method of preparing silicon germanium alloy nanocrystals by the simultaneous thermal disproportionation of a siliceous material and GeX2 in a conventional tube...
8366892 Graphite electrode  
The present invention relates to an electrode composed of carbon having at least two different zones, wherein an outer zone (A) forms the base of the electrode and carries one or more inner zones,...
8368179 Miscut semipolar optoelectronic device  
A method for improved growth of a semipolar (Al,In,Ga,B)N semiconductor thin film using an intentionally miscut substrate. Specifically, the method comprises intentionally miscutting a substrate,...
8367550 Fabricating low contact resistance conductive layer in semiconductor device  
A conductive layer may be fabricated on a semiconductor substrate by loading a silicon substrate in to a chamber whose inside temperature is at a loading temperature in the range of approximately...
8367301 Mask for crystallizing silicon, apparatus having the mask and method of crystallizing with the mask  
A mask for crystallizing silicon includes a first, a second, and a third pattern part arranged in a longitudinal direction, each of the first, second, and third pattern parts including a plurality...
8361227 Silicon carbide single crystals with low boron content  
In a crystal growth method, an enclosed growth crucible is provided inside of a growth chamber. The growth crucible has polycrystalline source material and a seed crystal disposed in spaced...
8361228 Crucible having a doped upper wall portion and method for making the same  
A fused glass crucible includes a collar of doped aluminum silica that defines uppermost and outermost surfaces of the crucible. The melt line that defines the surface of molten silicon in the...
8361225 Low etch pit density (EPD) semi-insulating III-V wafers  
Systems and methods of manufacturing wafers are disclosed using a low EPD crystal growth process and a wafer annealing process are provided resulting in III-V/GaAs wafers that provide higher device...
8361222 Method for producing group III nitride-based compound semiconductor  
In the production of GaN through the flux method, deposition of miscellaneous crystals on the nitrogen-face of a GaN self-standing substrate and waste of raw materials are prevented. Four...
8361223 Method for measuring liquid level in single crystal pulling apparatus employing CZ method  
Provided is a method for reliably and easily measuring a liquid level by selecting an optimal reflection method from among a plurality of reflection methods, depending on growing conditions of a...
8361226 III-nitride single-crystal growth method  
This III-nitride single-crystal growth method, being a method of growing a AlxGa1-xN single crystal (4) by sublimation, is furnished with a step of placing source material (1) in a crucible (12),...
8361224 Colloidal photonic crystals using colloidal nanoparticles and method for preparation thereof  
The present invention relates to colloidal photonic crystals using colloidal nanoparticles and a method for the preparation thereof, wherein by adding a viscoelastic material into a solution...
8361550 Method for forming SrTiO3 film and storage medium  
A substrate is arranged in a processing chamber, the substrate is heated, a Ti material is introduced into the processing chamber in the form of gas, the Ti material is oxidized by introducing an...
8361551 Methods forming high dielectric target layer  
In a method of forming a target layer having a uniform composition of constituent materials, a first precursor including a first central atom and a ligand is chemisorbed on a first reaction site of...
8357308 Ion etching of growing InP nanocrystals using microwave  
High quantum yield InP nanocrystals are used in the bio-technology, bio-medical, and photovoltaic, specifically IV, III-V and III-VI nanocrystal technological applications. InP nanocrystals...
8357242 Crystalline film devices, apparatuses for and methods of fabrication  
Methods of depositing thin film materials having crystalline content are provided. The methods use plasma enhanced chemical vapor deposition. According to one embodiment of the present invention,...
8357309 Class of ferromagnetic semiconductors  
Single crystal and polycrystal oxoruthenates having the generalized compositions (Baz,Sr1−z)FexCoyRu6−(x+y)O11 (1≦(x+y)≦5; 0≦z≦1) and (Ba,Sr)M2±xRu4∓xO11 (M=Fe,Co) belong to a novel class of ferro...
8357241 Method of organic material vacuum evaporation and apparatus thereof  
There is provided a method of vacuum evaporation comprising causing evaporated material (5) from vacuum evaporation source (20) furnished with container (1) with its one side open accommodating...
8357243 Method for testing group III-nitride wafers and group III-nitride wafers with test data  
The present invention discloses a new testing method of group III-nitride wafers. By utilizing the ammonothermal method, GaN or other Group III-nitride wafers can be obtained by slicing the bulk...
8354618 Load chamber with dual heaters  
A disk processing system with a load chamber having a stationary heater and a movable heater.
8353985 Process for producing colloidal crystals immobilized with a polymer and colloidal crystals immobilized with a polymer  
A process for producing colloidal crystals immobilized with a polymer, comprising the steps of: preparing a monomer-dispersion in which colloidal crystals having a three-dimensionally ordered array...
8349074 Method for detecting diameter of single crystal, single-crystal manufacturing method by using the same and single-crystal manufacturing apparatus  
A method for detecting a diameter of a single crystal at the time of pulling the single crystal from a silicon melt contained in a crucible according to the Czochralski method, the method including...
8349075 2-dimensional line-defects controlled silicon ingot, wafer and epitaxial wafer, and manufacturing process and apparatus therefor  
The present invention reports a defect that has not been reported, and discloses a defect-controlled silicon ingot, a defect-controlled wafer, and a process and apparatus for manufacturing the...
8349077 Large aluminum nitride crystals with reduced defects and methods of making them  
Reducing the microvoid (MV) density in AlN ameliorates numerous problems related to cracking during crystal growth, etch pit generation during the polishing, reduction of the optical transparency...
8351660 Apparatus and method for detecting specific object pattern from image  
A face area is detected from an image captured by an image pickup device, pixel values of the image are adjusted based on information concerning the detected face area, a person area is detected...
8349078 Method of forming nitride semiconductor epitaxial layer and method of manufacturing nitride semiconductor device  
The present method of forming a nitride semiconductor epitaxial layer includes the steps of growing at least one layer of nitride semiconductor epitaxial layer on a nitride semiconductor substrate...
8349079 Apparatus for manufacturing group III nitride semiconductor  
An apparatus for manufacturing a Group III nitride semiconductor is composed of a pressure vessel, a reaction vessel disposed within the pressure vessel, a heating device disposed within the...
8349076 Method of fabricating GaN substrate  
A method of fabricating a freestanding gallium nitride (GaN) substrate includes: preparing a GaN substrate within a reactor; supplying HCl and NH3 gases into the reactor to treat the surface of the...
8349742 Gallium nitride-based semiconductor device and method for manufacturing the same  
A gallium nitride-based semiconductor device includes a composite substrate and a gallium nitride layer. The composite substrate includes a silicon substrate and a filler. The silicon substrate...
8349080 Micro-manipulator machine for harvesting and cryofreezing crystals  
A micro-manipulator machine for harvesting and cryofreezing crystals for cryogenic storage and subsequent analysis includes a micropositioner mechanism for converting motions manually input to a...
8343618 Silicon wafer and method of manufacturing the same  
A silicon wafer in which both occurrences of slip dislocation and warpage are suppressed in device manufacturing processes is a silicon wafer having BMDs having an octahedral shape, wherein BMDs...
8343276 High-temperature ionic state compound crystallization technology  
The present invention provides a high-temperature ionic state fluidized bed compound crystallization technology and an internal reactor structure thereof. The principle of the present invention is...
8343239 Group III nitride semiconductor manufacturing system  
The invention provides a group III nitride semiconductor manufacturing system which is free from interruption to rotation of a rotational shaft. The group III nitride semiconductor manufacturing...
8343854 Method of reducing memory effects in semiconductor epitaxy  
A method of reducing memory effects during an epitaxial growth process is provided in which a gas mixture comprising hydrogen gas and a halogen-containing gas is used to flush the CVD reaction...
8343275 Single crystal growth method and single crystal pulling apparatus for improving yield and productivity of single crystal  
The present invention resides in a silicon single crystal growth method of pulling up and growing a single crystal from a melt of a silicon raw material in a quartz crucible based on a Czochralski...
8337798 Crystal producing apparatus, crystal producing method, substrate producing method, gallium nitride crystal, and gallium nitride substrate  
A crystal producing apparatus includes a crystal forming unit and a crystal growing unit. The crystal forming unit forms a first gallium nitride (GaN) crystal by supplying nitride gas into melt...
8337616 Apparatus and method for producing single crystal  
A single-crystal manufacturing apparatus comprises a chamber, a crucible in the chamber, a heater arranged around the crucible, a lifting mechanism for lifting a seed crystal, and a guide passage...
8337615 Method for producing a monocrystalline Si wafer having an approximately polygonal cross-section and corresponding monocrystalline Si wafer  
A method of making a single-crystalline Si wafer with an approximately polygonal cross section and having a material property that is the same as a zone-pulled Si crystal, and the...
8337617 Manufacturing method and manufacturing apparatus of a group III nitride crystal  
A method for manufacturing a group III nitride crystal on a seed crystal in a holding vessel holding therein a melt containing a group III metal, an alkali metal and nitrogen. The manufacturing...
8337618 Silicon crystallization system and silicon crystallization method using laser  
A silicon crystallization system includes a vibration device for vibrating a linear laser beam along a longer-axis direction of the linear laser beam. A vibration frequency at which the laser beam...
8338273 Pulsed selective area lateral epitaxy for growth of III-nitride materials over non-polar and semi-polar substrates  
An epitaxy procedure for growing extremely low defect density non-polar and semi-polar III-nitride layers over a base layer, and the resulting structures, is generally described. In particular, a...
8337614 GaN single crystal substrate and method for processing surface of GaN single crystal substrate  
The surface of a gallium nitride single crystal substrate is processed, e.g., comprising steps by planarizing the top side and the bottom side of a gallium nitride original substrate positioned on...