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8323404 Group III nitride crystal and manufacturing method thereof  
A group III nitride crystal containing therein an alkali metal element comprises a base body, a first group III nitride crystal formed such that at least a part thereof makes a contact with the...
8323405 Process and apparatus for growing a crystalline gallium-containing nitride using an azide mineralizer  
An apparatus and associated method for large-scale manufacturing of gallium nitride is provided. The apparatus comprises a large diameter autoclave and a raw material basket. Methods include...
8317920 Directional solidification furnace for reducing melt contamination and reducing wafer contamination  
A directional solidification furnace includes a crucible for holding molten silicon and a lid covering the crucible and forming an enclosure over the molten silicon. The crucible also includes an...
8317919 System for continuous growing of monocrystalline silicon  
An improved system based on the Czochralski process for continuous growth of a single crystal ingot comprises a low aspect ratio, large diameter, and substantially flat crucible, including an...
8313577 Apparatus for producing single crystal silicon  
An apparatus for producing single crystal silicon comprising: an induction heating coil that is disposed around the polycrystalline silicon rod for fusing the polycrystalline silicon rod; an...
8313720 Guided diameter SiC sublimation growth with multi-layer growth guide  
In the growth of a SiC boule, a growth guide is provided inside of a growth crucible that is charged with SiC source material at a bottom of the crucible and a SiC seed crystal at a top of the...
8308864 Single-crystal manufacturing method  
The present invention is a single-crystal manufacturing method based on the Czochralski method, comprising at least the steps of: producing a melt by heating and melting a crystalline raw material...
8309439 Nitride nanowires and method of producing such  
The present invention relates to the growing of nitride semiconductors, applicable for a multitude of semiconductor devices such as diodes, LEDs and transistors. According to the method of the...
8310030 III-nitride crystal substrate and III-nitride semiconductor device  
Affords methods of manufacturing bulk III-nitride crystals whereby at least the surface dislocation density is low globally. The present III-nitride crystal manufacturing method includes: a step of...
8309209 Ribbon crystal string for increasing wafer yield  
A ribbon crystal has a body with a width dimension, and string embedded within the body. The string has a generally elongated cross-sectional shape. This cross-section (of the string) has a...
8303710 High pressure apparatus and method for nitride crystal growth  
A high pressure apparatus and related methods for processing supercritical fluids. In a specific embodiment, the present apparatus includes a capsule, a heater, at least one ceramic ring but can be...
8304057 Ribbon crystal end string with multiple individual strings  
A ribbon crystal has a body and end string within the body. At least one end string has a generally concave cross-sectional shape and is formed from at least two individual strings.
8304241 Method for determining crystallization parameters and apparatus for use with the same  
The present disclosure provides a method to allow a user to pre-screen numerous crystallization conditions in the crystallization space to identify those conditions with the highest probability of...
8303711 Electrode anchoring structure in crystal-growing furnaces  
An electrode anchoring structure in a crystal-growing furnace includes at least one graphite electrode pillar, at least one metal electrode pillar, at least one anchoring base, and at least one...
8303924 Production method for a low-dislocation bulk AlN single crystal and low-dislocation monocrystalline AlN substrate  
A bulk AlN single crystal is grown on a monocrystalline AlN seed crystal having a central longitudinal mid-axis and disposed in a crystal growth region of a growing crucible. The bulk AlN single...
8298926 Silicon wafer with controlled distribution of embryos that become oxygen precipitates by succeeding annealing and its manufacturing method  
A method for making a silicon wafer includes the steps of generating and stabilizing embryos that become oxygen precipitates by succeeding thermal annealing applied during a semiconductor device...
8298333 Crucible for the crystallization of silicon and process for making the same  
A protective coating is prepared for, and applied to, crucibles used in the handling of molten materials that are solidified in the crucible and then removed as ingots. Crucibles containing this...
8298335 Enclosure for controlling the environment of optical crystals  
An enclosure that maintains the environment of one or more optical crystals and allows efficient frequency conversion for light at wavelengths at or below 400 nm with minimal stress being placed on...
8298334 Method for crystallizing Geobacillus strain T1 lipase polypeptide  
The present invention provides a method of crystallizing of enzymes. The method is for rapidly crystallizing enzymes from impure mixtures. The method is simple and cheap, and it is compatible to...
8293007 Removable thermal control for ribbon crystal pulling furnaces  
A ribbon crystal pulling furnace has a base insulation and a liner insulation removably connected to the base insulation. At least a portion of the liner insulation forms an interior for containing...
8293012 Method for growing AlxGa1-xN crystal, and AlxGa1-xN crystal substrate  
Affords AlxGa1-xN crystal growth methods, as well as AlxGa1-xN crystal substrates, wherein bulk, low-dislocation-density crystals are obtained. The AlxGa1-xN crystal (0
8293592 Method of manufacturing semiconductor device and substrate processing apparatus  
A semiconductor device manufacturing method including: (a) loading into a chamber a substrate having at least an exposed silicon surface and an exposed surface of silicon oxide film or silicon...
8293011 Method for growing group III nitride semiconductor crystal and growing device for group III nitride semiconductor crystal  
A method for growing a Group III nitride semiconductor crystal is provided with the following steps: First, a chamber including a heat-shielding portion for shielding heat radiation from a material...
8293008 Large-sized bismuth-zinc-borate nonlinear optical crystal and preparation methods and applications thereof  
The present invention relates to a large-sized and high-quality bismuth-zinc-borate (Bi2 ZnB2 O7) single crystal, preparation methods and applications thereof. The crystal has cross-sectional...
8293010 Templated growth of porous or non-porous castings  
A method of forming a templated casting involves incorporating a liquid feedstock into the channels of a honeycomb substrate to form a feedstock-laden substrate, and directionally solidifying the...
8293628 Strain-controlled atomic layer epitaxy, quantum wells and superlattices prepared thereby and uses thereof  
Processes for forming quantum well structures which are characterized by controllable nitride content are provided, as well as superlattice structures, optical devices and optical communication...
8293009 Methods for efficiently making thin semiconductor bodies from molten material for solar cells and the like  
A pressure differential is applied across a mold sheet and a semiconductor (e.g. silicon) wafer (e.g. for solar cell) is formed thereon. Relaxation of the pressure differential allows release of...
8288683 Fast axis beam profile shaping for high power laser diode based annealing system  
A dynamic surface anneal apparatus for annealing a semiconductor workpiece has a workpiece support for supporting a workpiece, an optical source and scanning apparatus for scanning the optical...
8287643 Clad textured metal substrate for forming epitaxial thin film thereon and method for manufacturing the same  
The present invention provides an oriented substrate for forming an epitaxial thin film thereon, which has a more excellent orientation than that of a conventional one and a high strength, and a...
8287645 Production process for high purity polycrystal silicon and production apparatus for the same  
In the production process of the present invention for high purity polycrystal silicon, using a vertical reactor having a silicon chloride gas-feeding nozzle and a reducing agent gas-feeding nozzle...
8287644 Method for growing silicon carbide single crystal  
In a method for growing a silicon carbide single crystal on a silicon carbide single crystal substrate by contacting the substrate with a solution containing C by dissolving C into the melt that...
8287642 Devices and methods for providing stimulated raman lasing  
Devices and methods for providing stimulated Raman lasing are provided. In some embodiments, devices include a photonic crystal that includes a layer of silicon having a lattice of holes and a...
8282896 Devices and methods for holding microfluidic devices  
Carriers or holders for holding microfluidic devices are provided. Some of the carriers that are provided include a hydration control device and/or a source of controlled fluid pressure to...
8282733 Manufacturing method of semiconductor apparatus  
The manufacturing method of a semiconductor apparatus has a step for carrying in the substrate into the processing chamber; a step for heating the processing chamber and the substrate to the...
8277622 High uniformity boron doped diamond material  
The present invention relates to diamond material comprising a boron doped single crystal diamond substrate layer having a first surface and a boron doped single crystal diamond conductive layer on...
8280468 Superconducting magnet device for single crystal pulling apparatus  
A superconducting magnet device for a single crystal pulling apparatus is arranged outside a pulling furnace containing a crucible for melting a single crystal material therein so as to apply a...
8277558 Czochralski apparatus for growing crystals and purification method of waste salts using the same  
Disclosed are a czochralski apparatus for growing crystals and a purification method of waste salts using the same. More particularly, the present invention provides a czochralski apparatus for...
8278624 Lutetium oxyorthosilicate scintillator having improved scintillation and optical properties and method of making the same  
LSO scintillation crystals with improved scintillation and optical properties are achieved by controlled co-doping a LSO crystal melt with amounts of cerium and an additional codopant such as...
8277559 Quartz glass crucible for pulling up silicon single crystal and method for manufacture thereof  
A quartz glass crucible which has a non-transparent outer layer formed through melting a natural silica powder and a transparent layer formed in the inside of the outer layer, wherein the...
8278666 Method and apparatus for growing high purity 2H-silicon carbide  
The disclosure relates to a high purity 2H-SiC composition and methods for making same. The embodiments represented herein apply to both thin film and bulk growth of 2H-SiC. According to one...
8278672 Semiconductor light-emitting device and fabrication method thereof  
A semiconductor light-emitting device is disclosed. The semiconductor light-emitting device comprises a multilayer epitaxial structure disposed on a semiconductor substrate. The semiconductor...
8273177 Titanium-doped indium oxide films  
An apparatus and methods of forming the apparatus include a film of transparent conductive titanium-doped indium oxide for use in a variety of configurations and systems. The film of transparent...
8273176 Method for processing silicon powder to obtain silicon crystals  
Embodiments of the present invention relate to a process for obtaining silicon crystals from silicon. The method includes contacting silicon powder with a solvent metal to provide a mixture...
8268074 Method and device for producing oriented solidified blocks made of semi-conductor material  
A method and a device for producing oriented solidified blocks made of semi-conductor material are provided. The device includes a crucible, in which melt is received, and has an insulation which...
8268077 Upper heater, single crystal production apparatus, and method for producing single crystal  
An upper heater for use in the production of a single crystal, the upper heater having electrodes to which a current is supplied and a heat generating section which generates heat by resistance...
8268076 SOI wafers having MxOy oxide layers on a substrate wafer and an amorphous interlayer adjacent the substrate wafer  
SOI wafers are manufactured by forming on a silicon substrate a monocrystalline first, cubic 1a-3 metal or mixed metal oxide layer whose lattice constant differs from that of the substrate by 5% or...
8268075 Method of producing zinc oxide semiconductor crystal  
A method of producing a zinc oxide-based semiconductor crystal, including: introducing at least zinc and oxygen on a surface of a substrate; and growing a zinc oxide-based semiconductor crystal on...
8262796 β-Ga2O3 single crystal growing method, thin-film single crystal growing method, Ga2O3 light-emitting device, and its manufacturing method  
A thin-film single crystal growing method includes preparing a substrate, irradiating an excitation beam on a metallic target made of a pure metal or an alloy in a predetermined atmosphere, and...
8263483 Method including producing a monocrystalline layer  
A method including producing a monocrystalline layer is disclosed. A first lattice constant on a monocrystalline substrate has a second lattice constant at least in a near-surface region. The...
8263984 Process for making a GaN substrate  
In some embodiments, the invention relates to a process for making a GaN substrate comprising: transferring a first monocrystal GaN layer onto a supporting substrate; applying crystal growth for a...