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7625447 |
Method of growing semiconductor crystal
SiC is a very stable substance, and it is difficult to control the condition of a SiC surface to be suitable for crystal growth in conventional Group III nitride crystal growing apparatuses. This...
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7615203 |
Single crystal diamond
A single crystal diamond grown by vapor phase synthesis, wherein when one main surface is irradiated with a linearly polarized light considered to be the synthesis of two mutually perpendicular...
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7601216 |
Gas diffusion electrodes, membrane-electrode assemblies and method for the production thereof
A method for forming a patterned noble metal coating on a gas diffusion medium substantially free of ionomeric components comprising subjecting an electrically conductive web with a patterned mask...
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7594967 |
Reduction of dislocation pile-up formation during relaxed lattice-mismatched epitaxy
A semiconductor structure including a cap layer formed over a semiconductor substrate having a rough edge, which discourages formation of dislocation pile-up defects.
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7572333 |
Method for manufacturing semiconductor device
A semiconductor manufacturing apparatus includes a hot plate which heats a sapphire substrate; a support table having a support plate disposed as being spaced away from the hot plate by a...
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7553372 |
Method of growing semiconductor crystal
SiC is a very stable substance, and it is difficult to control the condition of a SiC surface to be suitable for crystal growth in conventional Group III nitride crystal growing apparatuses. This...
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7544249 |
Large-diameter SiC wafer and manufacturing method thereof
From the viewpoint of manufacturing an SiC semiconductor device economically, a present Si device manufacturing line is utilized to make it possible to handle a small-diameter SiC wafer....
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7540919 |
Solidification of crystalline silicon from reusable crucible molds
A process for making silicon ingots using a multi-part, reusable, graphite crucible of at least two mold pieces configured for assembly into an open top mold having an interior surface functional...
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7504643 |
Method for cleaning a lithographic apparatus module, a cleaning arrangement and a lithographic apparatus comprising the cleaning arrangement
A cleaning arrangement for a lithographic apparatus module may be provided in a collector. The cleaning arrangement includes a hydrogen radical source configured to provide a hydrogen radical...
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7501022 |
Methods of fabricating silicon carbide crystals
Methods for producing silicon carbide crystals, seed crystal holders and seed crystal for use in producing silicon carbide crystals and silicon carbide crystals are provided. Silicon carbide...
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7501023 |
Method and apparatus for fabricating crack-free Group III nitride semiconductor materials
A method and apparatus for growing low defect, optically transparent, colorless, crack-free, substantially flat, single crystal Group III nitride epitaxial layers with a thickness of at least 10...
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7481879 |
Diamond single crystal substrate manufacturing method and diamond single crystal substrate
A diamond single crystal substrate manufacturing method for growing by vapor-phase synthesis a single crystal from a diamond single crystal seed substrate, comprising etching away by reactive ion...
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7481882 |
Method for forming a thin film
A method for forming a film includes forming the film on a substrate, followed by performing a first annealing of the film at a temperature lower than a crystallization temperature of the film. A...
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7479188 |
Process for producing GaN substrate
A process for producing an inexpensive large high-quality GaN substrate which comprises forming a MgO buffer layer on a high-quality substrate, generating a ZnO layer on the MgO buffer layer while...
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7468103 |
Method of manufacturing gallium nitride-based single crystal substrate
Disclosed herein is a method of manufacturing a gallium nitride-based (Al x In y Ga (1−x−y) N, where 0≦x≦1, 0≦y≦1, 0≦x+y≦1) single crystal substrate. The method comprises the steps...
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7465354 |
Patterned ferroelectric thin films for microwave devices
A process, for patterning a thin film that is highly resistant to conventional etching processes and that is to be deposited at a high substrate temperature, is disclosed. The process uses a...
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7445673 |
Manufacturing gallium nitride substrates by lateral overgrowth through masks and devices fabricated thereof
Gallium nitride substrates are grown by epitaxial lateral overgrowth using multiple steps. On a masked substrate having openings areas, selective growth produces first triangular stripes in which...
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7438790 |
Electrode for electrolysis and process for producing the same
The present invention provides an electrode for electrolysis including: a conductive substrate; and a conductive diamond formed on a surface of the conductive substrate, the conductive substrate...
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7419546 |
Gas diffusion electrodes, membrane-electrode assemblies and method for the production thereof
A method for forming a noble metal coating on a gas diffusion medium substantially free of ionomeric components comprising subjecting an electrically conductive web to a first ion beam having an...
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7396410 |
Featuring forming methods to reduce stacking fault nucleation sites
Epitaxial silicon carbide layers are fabricated by forming features in a surface of a silicon carbide substrate having an off-axis orientation toward a crystallographic direction. The features...
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7381267 |
Heteroatomic single-crystal layers
A method for forming, by epitaxy, a heteroatomic single-crystal semiconductor layer on a single-crystal semiconductor wafer, the crystal lattices of the layer and of the wafer being different,...
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7377978 |
Method for producing silicon epitaxial wafer and silicon epitaxial wafer
It is to provide a method for producing a silicon epitaxial wafer, which can prevent fine unevenness from occurring on a rear main surface of a silicon epitaxial wafer and which suppresses the haze...
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7332031 |
Bulk single crystal gallium nitride and method of making same
A single crystal M*N article, which may be made by a process including the steps of: providing a substrate of material having a crystalline surface which is epitaxially compatible with M*N;...
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7300519 |
Reduction of subsurface damage in the production of bulk SiC crystals
The invention is an improvement in a method of producing a high quality bulk single crystal of silicon carbide in a seeded sublimation system. The improvement includes etching the front face on...
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7226504 |
Method to form thick relaxed SiGe layer with trench structure
A method of forming a SiGe layer having a relatively high germanium content and a relatively low threading dislocation density includes preparing a silicon substrate; depositing a layer of SiGe to...
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7208044 |
Topotactic anion exchange oxide films and method of producing the same
This invention disclosure describes methods for the fabrication metal oxide films on surfaces by topotactic anion exchange, and laminate structures enabled by the method. A precursor metal-nonmetal...
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7135072 |
Methods of fabricating silicon carbide crystals
Methods for producing silicon carbide crystals, seed crystal holders and seed crystal for use in producing silicon carbide crystals and silicon carbide crystals are provided. Silicon carbide...
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7128974 |
Thick single crystal diamond layer method for making it and gemstones produced from the layer
This invention relates to diamond and more particularly to diamond produced by chemical vapour deposition (hereinafter referred to as CVD). According to a first aspect of the invention, there is...
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7128786 |
Process for depositing III-V semiconductor layers on a non-III-V substrate
This invention relates to a method for depositing III-V semiconductor layers on a non III-V substrate especially a sapphire, silicon or silicon oxide substrate, or another substrate containing...
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7105055 |
In situ growth of oxide and silicon layers
A single-wafer, chemical vapor deposition reactor is provided with hydrogen and silicon source gas suitable for epitaxial silicon deposition, as well as a safe mixture of oxygen in a non-reactive...
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7070651 |
Process for growing a carbon film
A film (carbon and/or diamond) for a field emitter device, which may be utilized within a computer display, is produced by a process utilizing etching of a substrate and then depositing the film....
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7060131 |
Epitaxy with compliant layers of group-V species
The present invention relates a method for epitaxial growth of a second group III-V crystal having a second lattice constant over a first group III-V crystal having a first lattice constant,...
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7060597 |
Manufacturing method for a silicon substrate having strained layer
A manufacturing method for a silicon substrate having a strained layer, has steps of forming a plurality of atomic steps having a height of 0.1 nm or more on the surface of a silicon substrate,...
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6974501 |
Multi-layer articles and methods of making same
The invention relates to multi-layer articles and methods of making such articles. The methods include first conditioning the surface of an underlying layer, such as a buffer layer or a...
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6964705 |
Method for producing semiconductor crystal
A seed layer as a laminate of a GaN layer (second seed layer) and an AlN buffer layer (first seed layer) is formed on a sapphire substrate. A front surface thereof is etched in the form of stripes...
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6942732 |
Method for forming double density wordline
A method for forming a double density wordline. A semiconductor substrate having a poly layer, a first insulating layer, a first dummy poly layer, and a second insulating layer is provided. The...
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6923861 |
Method of manufacturing photonic crystal
A photonic crystal manufacturing method exposes two or more silver halide particle layers that contain silver halide particles which have different spectral sensitivity characteristics for each of...
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6916373 |
Semiconductor manufacturing method
A method for manufacturing a semiconductor using a wafer carrier, wherein the temperature of a wafer can be made uniform with few differences in surface composition distribution. A plurality of...
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6902716 |
Fabrication of single crystal diamond tips and their arrays
The present invention deals with the generation of sharp single crystal diamond tips and the arrays of these tips, and their fabrication technology. The invention combines the deposition of...
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6893501 |
Method for manufacturing a semiconductor device having a capping layer covering a capacitor of the semiconductor device
A method for manufacturing a capping layer covering a capacitor of a semiconductor memory device, preferably a metal-insulator-metal (MIM) capacitor, wherein the method includes forming a capacitor...
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6875268 |
Method of improving a surface of a substrate for bonding
A method of preparing a surface of a substrate for bonding by removing oxide and altering the atomic surface of the substrate is described. The method comprises, providing a substrate comprised of...
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6835965 |
Semiconductor light-emitting devices
An object of the present invention is to provide a semiconductor light-emitting device that reduces dislocation density and has a high luminous efficiency. A semiconductor light-emitting device 20...
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6835246 |
Nanostructures for hetero-expitaxial growth on silicon substrates
Selected micro- and nanoscale, 1-dimensional and 2-dimensional periodic and random structures generated on silicon and other substrates are expected to perform as compliant, thin films for...
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6808564 |
In-situ post epitaxial treatment process
A process for forming an epitaxial layer on a semiconductor wafer substrate is provided. The process comprises providing a semiconductor wafer substrate and an area for forming an epitaxial layer...
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6802902 |
Process for producing an epitaxial layer of gallium nitride
A process for producing an epitaxial layer of gallium nitride (GaN). A film of a dielectric whose thickness is about one monolayer is formed on a surface of a substrate. A continuous gallium...
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6783592 |
Lateral movement of screw dislocations during homoepitaxial growth and devices yielded therefrom free of the detrimental effects of screw dislocations
The present invention is related to a method that enables and improves wide bandgap homoepitaxial layers to be grown on axis single crystal substrates, particularly SiC. The lateral positions of...
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6780241 |
Monolithic optical device manufacturing and integration methods
The present invention provides methods of manufacturing and integrating optical devices. In one embodiment, a method of integrating an optical device may include forming a first device over a...
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6736894 |
Method of manufacturing compound single crystal
To provide a method of manufacturing compound semiconductor single crystals such as silicon carbide and gallium nitride by epitaxial growth methods, that is capable of yielding compound single...
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6719841 |
Manufacturing method for high-density magnetic data storage media
A method of fabricating a high-density magnetic data-storage medium, the method comprising the steps of: (a) forming a plurality of nanodots of non-magnetic material in a regular array on a surface...
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6709513 |
Substrate including wide low-defect region for use in semiconductor element
In a process for producing a substrate for use in a semiconductor element: a porous anodic alumina film having a great number of minute pores is formed on a surface of a base substrate; the surface...
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