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8168000 |
III-nitride semiconductor device fabrication
A method of fabricating a III-nitride power semiconductor device which includes selective prevention of the growth of III-nitride semiconductor bodies to selected areas on a substrate in order to...
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8142566 |
Method for producing Ga-containing nitride semiconductor single crystal of BxAlyGazIn1-x-y-zNsPtAs1-s-t (0<=x<=1, 0<=y<1, 0
A Ga-containing nitride semiconductor single crystal characterized in that (a) the maximum reflectance measured by irradiating the Ga-containing nitride semiconductor single crystal with light at a...
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8133321 |
Process for producing silicon carbide single crystal
A process for producing a silicon carbide single crystal in which a silicon carbide single crystal layer is homo-epitaxially or hetero-epitaxially grown on a surface of a single crystal substrate,...
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8097080 |
Method of cutting single crystals
A method of dividing single crystals, particularly of plates of parts thereof, is proposed, which can comprise: pre-adjusting the crystallographic cleavage plane (2′) relative to the cleavage d...
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8092597 |
Method and apparatus for fabricating crack-free Group III nitride semiconductor materials
Method for producing a III-N (AlN, GaN, AlxGa(1-x)N) crystal by Vapor Phase Epitaxy (VPE), the method comprising: providing a reactor having: a growth zone for growing a III-N crystal; a substrate...
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8043687 |
Structure including a graphene layer and method for forming the same
A method for forming a graphene layer is disclosed herein. The method includes establishing an insulating layer on a substrate such that at least one seed region, which exposes a surface of the...
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8038795 |
Epitaxial growth and cloning of a precursor chiral nanotube
A precursor chiral nanotube with a specified chirality is grown using an epitaxial process and then cloned. A substrate is provided of crystal material having sheet lattice properties complementary...
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8029620 |
Methods of forming carbon-containing silicon epitaxial layers
In a first aspect, a method is provided for forming an epitaxial layer stack on a substrate. The method includes (1) selecting a target carbon concentration for the epitaxial layer stack; (2)...
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8025729 |
Device and process for heating III-V wafers, and annealed III-V semiconductor single crystal wafer
A device for heat treating (annealing) a III-V semiconductor wafer comprises at least one wafer support unit which is dimensioned such that a cover provided above the wafer surface is either spaced...
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8019458 |
Creating multi-layer/multi-input/multi-output (MLMIMO) models for metal-gate structures
The invention provides a method of processing a wafer using multilayer processing sequences and Multi-Layer/Multi-Input/Multi-Output (MLMIMO) models and libraries that can include one or more...
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7955959 |
Method for manufacturing GaN-based film LED
A method for manufacturing GaN-based film LED based on masklessly transferring photonic crystal structure is disclosed. Two dimensional photonic crystals are formed on a sapphire substrate. Lattice...
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7915152 |
III-V nitride substrate boule and method of making and using the same
A boule formed by high rate vapor phase growth of Group III-V nitride boules (ingots) on native nitride seeds, from which wafers may be derived for fabrication of microelectronic device structures....
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7896965 |
Method for the production of a plurality of optoelectronic semiconductor chips and optoelectronic semiconductor chip
A method for the production of a plurality of optoelectronic semiconductor chips each having a plurality of structural elements with respectively at least one semiconductor layer. The method...
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7846491 |
Surface reconstruction method for silicon carbide substrate
A surface reconstruction method for a silicon carbide substrate includes a silicon film forming step of forming a silicon film on a surface of the silicon carbide substrate and a heat treatment...
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7842134 |
Diamond based substrate for electronic devices
The invention relates to a method of manufacture of a substrate for fabrication of semiconductor layers or devices, comprising the steps of providing a wafer of silicon including at least one first...
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7837792 |
Method for manufacturing semiconductor device
In a method for manufacturing a crystalline silicon film by utilizing a metal element that accelerates the crystallization of silicon, an adverse influence of this metal element can be suppressed....
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7830027 |
Level realignment following an epitaxy step
The invention relates to inter-level realignment after a stage of epitaxy on a face (31) of a substrate (30), comprising the production of at least one initial guide mark (32) on the face of the...
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7815734 |
Thin film transistor and method of fabricating the same
Provided are a thin film transistor and method of fabricating the same, in which an amorphous silicon layer is formed on a substrate, a capping layer containing a metal catalyst having a different...
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7794542 |
Bulk single crystal gallium nitride and method of making same
A single crystal M*N article, which may be made by a process including the steps of: providing a substrate of material having a crystalline surface which is epitaxially compatible with M*N;...
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7786488 |
Nitride semiconductor wafer and method of processing nitride semiconductor wafer
Nitride semiconductor wafers which are produced by epitaxially grown nitride films on a foreign undersubstrate in vapor phase have strong inner stress due to misfit between the nitride and the...
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7776154 |
Preparation method of a coating of gallium nitride
The invention concerns a monocrystalline coating crack-free coating of gallium nitride or mixed gallium nitride and another metal, on a substrate likely to cause extensive stresses in the coating,...
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7749325 |
Method of producing gallium nitride (GaN) independent substrate, method of producing GaN crystal body, and method of producing GaN substrate
A method of producing a separated GaN crystal body grown by vapor phase epitaxy on a substrate made of material different from GaN is provided. In this method, a nitride deposit is formed during...
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7736928 |
Precision printing electroplating through plating mask on a solar cell substrate
Embodiments of the invention contemplate the formation of a low cost solar cell using a novel electroplating apparatus and method to form a metal contact structure having metal lines formed using...
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7708832 |
Method for preparing substrate for growing gallium nitride and method for preparing gallium nitride substrate
Provided is a method for preparing a substrate for growing gallium nitride and a gallium nitride substrate. The method includes performing thermal cleaning on a surface of a silicon substrate,...
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7695564 |
Thermal management substrate
The present invention is directed to a method for fabricating a thermal management substrate having a Silicon (Si) layer on a polycrystalline diamond film, or on a diamond-like-carbon (DLC) film....
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7686886 |
Controlled shape semiconductor layer by selective epitaxy under seed structure
A method for forming a structure of a desired cross-section on a substrate is provided. The method provides a seed structure comprising at least one support layer on the substrate. The support...
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7687382 |
Method of making group III nitride-based compound semiconductor
A method of making a group III nitride-based compound semiconductor has the steps of: providing a semiconductor substrate with a polished surface, the semiconductor substrate being of group III...
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7687798 |
Epitaxy with compliant layers of group-V species
The present invention relates a method for epitaxial growth of a second group III-V crystal having a second lattice constant over a first group III-V crystal having a first lattice constant,...
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7678195 |
Seeded growth process for preparing aluminum nitride single crystals
A method of growing bulk single crystals of an AlN on a single crystal seed is provided, wherein an AlN source material is placed within a crucible chamber in spacial relationship to a seed fused...
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7658798 |
Method for fixing metal particles and method for manufacturing substrate containing metal particles, method for manufacturing substrate containing carbon nanotube, and method for manufacturing substrate containing semiconductor-crystalline rod, employing thereof
A metal fine particle is adhere to a predetermined location on a substrate. A resist film containing a metallic compound dispersed therein is formed on a substrate (101). A patterning of the resist...
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7655197 |
III-V nitride substrate boule and method of making and using the same
A boule formed by high rate vapor phase growth of Group III-V nitride boules (ingots) on native nitride seeds, from which wafers may be derived for fabrication of microelectronic device structures....
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7651927 |
Semiconductor device and method for fabricating the same
A semiconductor device includes a substrate and a semiconductor layer formed on the substrate. The substrate has: a flat region provided in a main surface thereof; a first indentation region...
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7648576 |
Epitaxial wafer and method for producing same
After cleaning the front and back sides of a silicon wafer with a liquid SC-1 and liquid SC-2, the front and back sides of the silicon wafer are cleaned with an HF solution to be water-repellent...
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7641736 |
Method of manufacturing SiC single crystal wafer
A method of manufacturing an SiC single crystal wafer according to the present invention includes the steps of: (a) preparing an SiC single crystal wafer 10 with a mirror-polished surface; (b)...
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7625447 |
Method of growing semiconductor crystal
SiC is a very stable substance, and it is difficult to control the condition of a SiC surface to be suitable for crystal growth in conventional Group III nitride crystal growing apparatuses. This...
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7615203 |
Single crystal diamond
A single crystal diamond grown by vapor phase synthesis, wherein when one main surface is irradiated with a linearly polarized light considered to be the synthesis of two mutually perpendicular...
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7594967 |
Reduction of dislocation pile-up formation during relaxed lattice-mismatched epitaxy
A semiconductor structure including a cap layer formed over a semiconductor substrate having a rough edge, which discourages formation of dislocation pile-up defects.
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7572333 |
Method for manufacturing semiconductor device
A semiconductor manufacturing apparatus includes a hot plate which heats a sapphire substrate; a support table having a support plate disposed as being spaced away from the hot plate by a...
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7544249 |
Large-diameter SiC wafer and manufacturing method thereof
From the viewpoint of manufacturing an SiC semiconductor device economically, a present Si device manufacturing line is utilized to make it possible to handle a small-diameter SiC wafer....
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7540919 |
Solidification of crystalline silicon from reusable crucible molds
A process for making silicon ingots using a multi-part, reusable, graphite crucible of at least two mold pieces configured for assembly into an open top mold having an interior surface functional...
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7504643 |
Method for cleaning a lithographic apparatus module, a cleaning arrangement and a lithographic apparatus comprising the cleaning arrangement
A cleaning arrangement for a lithographic apparatus module may be provided in a collector. The cleaning arrangement includes a hydrogen radical source configured to provide a hydrogen radical...
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7501023 |
Method and apparatus for fabricating crack-free Group III nitride semiconductor materials
A method and apparatus for growing low defect, optically transparent, colorless, crack-free, substantially flat, single crystal Group III nitride epitaxial layers with a thickness of at least 10...
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7501022 |
Methods of fabricating silicon carbide crystals
Methods for producing silicon carbide crystals, seed crystal holders and seed crystal for use in producing silicon carbide crystals and silicon carbide crystals are provided. Silicon carbide...
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7481879 |
Diamond single crystal substrate manufacturing method and diamond single crystal substrate
A diamond single crystal substrate manufacturing method for growing by vapor-phase synthesis a single crystal from a diamond single crystal seed substrate, comprising etching away by reactive ion...
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7481882 |
Method for forming a thin film
A method for forming a film includes forming the film on a substrate, followed by performing a first annealing of the film at a temperature lower than a crystallization temperature of the film. A...
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7479188 |
Process for producing GaN substrate
A process for producing an inexpensive large high-quality GaN substrate which comprises forming a MgO buffer layer on a high-quality substrate, generating a ZnO layer on the MgO buffer layer while...
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7468103 |
Method of manufacturing gallium nitride-based single crystal substrate
Disclosed herein is a method of manufacturing a gallium nitride-based (AlxInyGa(1−x−y)N, where 0≦x≦1, 0≦y≦1, 0≦x+y≦1) single crystal substrate. The method comprises the steps of preparing a ZnO...
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7465354 |
Patterned ferroelectric thin films for microwave devices
A process, for patterning a thin film that is highly resistant to conventional etching processes and that is to be deposited at a high substrate temperature, is disclosed. The process uses a...
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7445673 |
Manufacturing gallium nitride substrates by lateral overgrowth through masks and devices fabricated thereof
Gallium nitride substrates are grown by epitaxial lateral overgrowth using multiple steps. On a masked substrate having openings areas, selective growth produces first triangular stripes in which...
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7438790 |
Electrode for electrolysis and process for producing the same
The present invention provides an electrode for electrolysis including: a conductive substrate; and a conductive diamond formed on a surface of the conductive substrate, the conductive substrate...
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