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7621999 |
Method and apparatus for AlGan vapor phase growth
An epitaxial growing method in which a crystal of Al x Ga 1-x N wherein x is a desirable constituent ratio can be grown on an Si substrate or sapphire substrate according to the HVPE process....
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7618492 |
Methods of forming nanocrystals
Methods of selectively forming nanocrystals on semiconductor devices are disclosed. Regions of a workpiece are masked with a masking material, and the nanocrystals are formed on the unmasked...
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7604697 |
Heteroepitaxial growth method for gallium nitride
A heteroepitaxial growth method for gallium nitride yields gallium nitride which contains good quality fine crystals and has excellent optical properties, on a quartz substrate or a silicon...
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7601217 |
Method of fabricating an epitaxially grown layer
A method of forming an epitaxially grown layer, preferably by providing a region of weakness in a support substrate and transferring a nucleation portion to the support substrate by bonding. A...
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7597757 |
ZnO film with C-axis orientation
A ZnO film with a C-axis preference is provided with a corresponding fabrication method. The method includes: forming a substrate; forming an amorphous Al 2 O 3 film overlying the substrate; and,...
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7572333 |
Method for manufacturing semiconductor device
A semiconductor manufacturing apparatus includes a hot plate which heats a sapphire substrate; a support table having a support plate disposed as being spaced away from the hot plate by a...
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7572331 |
Method of manufacturing a wafer
The present invention relates to a method of manufacturing a wafer comprising a single crystalline bulk substrate of a first material and at least one epitaxial layer of a second material which has...
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7566364 |
Method of fabricating orientation-controlled single-crystalline wire and method of fabricating transistor having the same
Provided may be a method of fabricating nanowires and a method of fabricating a transistor having the same. The method may include: forming a template layer on a substrate, the template layer...
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7560086 |
Single crystal diamond having 12C, 13C, and phosphorous
Synthetic monocrystalline diamond compositions having one or more monocrystalline diamond layers formed by chemical vapor deposition, the layers including one or more layers having an increased...
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7556687 |
Gallium nitride crystal substrate and method of producing same
A low-distortion gallium nitride crystal substrate including low dislocation single crystal regions (Z) having a definite c-axis and a definite a-axis, C-plane growth regions (Y) having a c-axis...
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7553370 |
Crystal growth method for nitride semiconductor and formation method for semiconductor device
Methods of crystal growth for semiconductor materials, such as nitride semiconductors, and methods of manufacturing semiconductor devices are provided. The method of crystal growth includes forming...
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7547359 |
Method of altering crystal structure of group 13 element nitride, group 13 element nitride and structure material containing cubic nitride
An aerosol of a powder composed of helium carrier gas and particles of a hexagonal aluminum nitride is charged through a transfer pipe 3 into a film deposition chamber 4 whose interior is...
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7540920 |
Silicon-containing layer deposition with silicon compounds
Embodiments of the invention generally provide a composition of silicon compounds and methods for using the silicon compounds to deposit a silicon-containing film. The processes employ introducing...
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7540919 |
Solidification of crystalline silicon from reusable crucible molds
A process for making silicon ingots using a multi-part, reusable, graphite crucible of at least two mold pieces configured for assembly into an open top mold having an interior surface functional...
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7537660 |
Crystallization apparatus, optical member for use in crystallization apparatus, crystallization method, manufacturing method of thin film transistor, and manufacturing method of matrix circuit substrate of display
A crystallization method includes wavefront-dividing an incident light beam into a plurality of light beams, condensing the wavefront-divided light beams in a corresponding phase shift portion of a...
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7534310 |
Single crystal GaN substrate, method of growing single crystal GaN and method of producing single crystal GaN substrate
A low dislocation density GaN single crystal substrate is made by forming a seed mask having parallel stripes regularly and periodically aligning on an undersubstrate, growing a GaN crystal on a...
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7524373 |
Apparatus and semiconductor co-crystal
The invention provides a method to enforce face-to-face stacking of organic semiconductors in the solid state that employs semiconductor co-crystal formers (SCCFs), to align semiconductor building...
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7524372 |
Method for manufacturing diamond single crystal substrate
A method for manufacturing a diamond single crystal substrate, in which a single crystal is grown from a diamond single crystal serving as a seed substrate by vapor phase synthesis, said method...
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7507293 |
Photonic crystals with nanowire-based fabrication
Fabrication of a photonic crystal is described. A patterned array of nanowires is formed, the nanowires extending outward from a surface, the nanowires comprising a catalytically grown nanowire...
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7494546 |
Method of growing insulating, semiconducting, and conducting group III-nitride thin films and coatings, and use as radiation hard coatings for electronics and optoelectronic devices
The present invention describes use of electron beam evaporation method for fabrication of group III-nitride thin films. The fabricated thin films found to have desirable crystalline and optical...
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7491269 |
Method for catalytic growth of nanotubes or nanofibers comprising a NiSi alloy diffusion barrier
The invention relates to a process for the growth of nanotubes or nanofibers on a substrate comprising at least an upper layer made of a first material, wherein: the formation, on the surface of...
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7488385 |
Method for epitaxial growth of a gallium nitride film separated from its substrate
The invention concerns the preparation of gallium nitride films by epitaxy with reduced defect density levels. It concerns a method for producing a gallium nitride (GaN) film by epitaxial...
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7481880 |
Mask and method for crystallizing amorphous silicon
A method of crystallizing amorphous silicon includes forming an amorphous silicon layer on a substrate, placing a mask over the substrate including the amorphous silicon layer, and applying a laser...
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7479188 |
Process for producing GaN substrate
A process for producing an inexpensive large high-quality GaN substrate which comprises forming a MgO buffer layer on a high-quality substrate, generating a ZnO layer on the MgO buffer layer while...
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7465354 |
Patterned ferroelectric thin films for microwave devices
A process, for patterning a thin film that is highly resistant to conventional etching processes and that is to be deposited at a high substrate temperature, is disclosed. The process uses a...
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7462239 |
Low temperature load and bake
Methods are provided for low temperature, rapid baking to remove impurities from a semiconductor surface prior to in-situ deposition. Advantageously, a short, low temperature process consumes very...
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7459025 |
Methods for transferring a layer onto a substrate
Systems and methods for transferring a thin film from a substrate onto another substrate, a layer of the same area as the substrate, of a thickness from sub-micron to tens of micron, and of the...
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7455729 |
Method for producing by vapour-phase epitaxy a gallium nitride film with low defect density
The invention concerns a method for preparing gallium nitride films by vapour-phase epitaxy with low defect densities. The invention concerns a method for producing a gallium nitride (GaN) film...
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7445673 |
Manufacturing gallium nitride substrates by lateral overgrowth through masks and devices fabricated thereof
Gallium nitride substrates are grown by epitaxial lateral overgrowth using multiple steps. On a masked substrate having openings areas, selective growth produces first triangular stripes in which...
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7442254 |
Nitride semiconductor device having a nitride semiconductor substrate and an indium containing active layer
A method of growing a nitride semiconductor crystal which has very few crystal defects and can be used as a substrate is disclosed. This invention includes the step of forming a first selective...
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7438762 |
Manufacture method for ZnO based compound semiconductor crystal and ZnO based compound semiconductor substrate
A manufacture method that can manufacture ZnO based compound semiconductor crystal of good quality. A ZnO substrate is prepared to have a principal surface made of a plurality of terraces of (0001)...
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7438759 |
Ambient environment nanowire sensor
An ambient environment nanowire sensor and corresponding fabrication method have been provided. The method includes: forming a substrate such as Silicon (Si) or glass; growing nanowires; depositing...
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7431767 |
Apparatus and method for growth of a thin film
An improved apparatus and method for substrate layer deposition in which substrate layers are grown by carrier gas delivery of sequential pulses of reactants to the substrate surface. At least one...
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7427326 |
Minimizing degradation of SiC bipolar semiconductor devices
A method of forming a bipolar device includes forming at least one p-type layer of single crystal silicon carbide and at least one n-type layer of single crystal silicon carbide on a substrate....
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7416606 |
Method of forming a layer of silicon carbide on a silicon wafer
The invention relates to a method of forming a layer of silicon carbide on a silicone wafer. The method includes the following steps: depositing an anti-carburation mask on the wafer using an...
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7407549 |
Diamond single crystal composite substrate and method for manufacturing the same
A diamond single crystal composite substrate which are constructed from a plurality of diamond single crystal substrates with uniform plane orientations disposed side by side and integrated overall...
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7404858 |
Method for epitaxial growth of silicon carbide
A method for epitaxial growth of silicon carbide using chemical vapor deposition (CVD) is provided. This method utilizes halogenated carbon precursors and control of the gas-phase interaction of...
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7399356 |
Method for preparation of ferroelectric single crystal film structure using deposition method
A film structure of a ferroelectric single crystal which can be beneficially used in the fabrication of high-performance electric and electronic parts and devices is prepared by forming an...
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7396410 |
Featuring forming methods to reduce stacking fault nucleation sites
Epitaxial silicon carbide layers are fabricated by forming features in a surface of a silicon carbide substrate having an off-axis orientation toward a crystallographic direction. The features...
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7396409 |
Acicular silicon crystal and process for producing the same
By uniformly forming an indefinite number of microscopic acicular crystals on a surface of a silicon substrate so as to be perpendicular to the surface of the substrate by plasma CVD method using a...
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7393411 |
β-Ga2O3 single crystal growing method, thin-film single crystal growing method, Ga2O3 light-emitting device, and its manufacturing method
A method for growing a β-Ga 2 O 3 single crystal hardly cracking and having a weakened twinning tendency and an improved crystallinity, a method for growing a thin-film single crystal with high...
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7387678 |
GaN substrate and method of fabricating the same, nitride semiconductor device and method of fabricating the same
A GaN substrate comprises a GaN single crystal substrate, an Al x Ga 1-x N intermediate layer (0<x≦1) epitaxially grown on the substrate, and an GaN epitaxial layer grown on the intermediate...
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7384479 |
Laser diode having an active layer containing N and operable in a 0.6 μm wavelength
An optical semiconductor device operable in a 0.6 μm band includes an active layer of GaInNP sandwiched by a pair of GaInP layer with a thickness of about 2 molecular layers or less.
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7381397 |
Using condensed chemicals to precondition lithium niobate and lithium tantalate crystals
Methods and apparatus for preconditioning a lithium niobate or lithium tantalate crystal. At least a portion of a surface of the crystal is covered with a condensed material including one or more...
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7368014 |
Variable temperature deposition methods
A deposition method may include, at a first temperature, contacting a substrate with a first precursor and chemisorbing a first layer at least one monolayer thick over the substrate. At a second...
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7361222 |
Device and method for producing single crystals by vapor deposition
A method and a device to grow from the vapor phase, a single crystal of either SiC, a group III-nitride, or alloys thereof, at a growth rate and for a period of time sufficient to produce a crystal...
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7354477 |
Method of growing GaN crystal, method of producing single crystal GaN substrate, and single crystal GaN substrate
A low dislocation density GaN single crystal substrate is made by forming a seed mask having parallel stripes regularly and periodically aligning on an undersubstrate, growing a GaN crystal on a...
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7338554 |
Method of synthesising and growing nanorods from a metal carbide on a substrate, substrates thus obtained and applications thereof
The invention relates to a process for synthesizing nanorods of a carbide of one metal M 1 on a substrate, which comprises:
a) the deposition, on the substrate, of a layer of nanocrystals...
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7335255 |
Manufacturing method of semiconductor device
The present invention provides a method for removing a metal element effectively from a crystalline semiconductor film obtained with the use of the metal element, without increasing the number of...
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7332030 |
Method of treating a part in order to alter at least one of the properties thereof
Process for the treatment of a component, at least one zone to be treated of which located in the depth of this component at a certain distance from the surface thereof, has at least one property...
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